CN103681964A - Method for restoring damped efficiency of solar cells - Google Patents
Method for restoring damped efficiency of solar cells Download PDFInfo
- Publication number
- CN103681964A CN103681964A CN201310628501.XA CN201310628501A CN103681964A CN 103681964 A CN103681964 A CN 103681964A CN 201310628501 A CN201310628501 A CN 201310628501A CN 103681964 A CN103681964 A CN 103681964A
- Authority
- CN
- China
- Prior art keywords
- efficiency
- cell piece
- solar battery
- light source
- temperature
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims abstract description 20
- 238000010438 heat treatment Methods 0.000 claims abstract description 8
- 238000012360 testing method Methods 0.000 claims abstract description 8
- 238000000137 annealing Methods 0.000 abstract description 4
- 229910052710 silicon Inorganic materials 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000005286 illumination Methods 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 230000008929 regeneration Effects 0.000 description 3
- 238000011069 regeneration method Methods 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000011084 recovery Methods 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- XGCTUKUCGUNZDN-UHFFFAOYSA-N [B].O=O Chemical compound [B].O=O XGCTUKUCGUNZDN-UHFFFAOYSA-N 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 238000005204 segregation Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1864—Annealing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention relates to a method for restoring damped efficiency of solar cells. The method is characterized by including selecting a solar cell, accumulating irradiation amount, heating and testing. By using an annealing process, damped cell efficiency is restored, and the method is obvious in advantage and suitable for popularization and use.
Description
Technical field
The present invention relates to the restoration methods after a kind of solar battery sheet efficiency decay.
Background technology
The solar cell that P type (boron-doping) silicon chip of boracic and oxygen is made, after illumination, its minority carrier life time there will be relaxation phenomenon in various degree.Boron, oxygen content in silicon chip are larger, and the boron oxygen complex producing in its body under illumination or electric current note people condition is more, and the amplitude that its minority carrier life time reduces is just larger, thereby causes the power of solar cell to decline.
The technical measures method that generally reduces minority carrier life time decay has following several: (1) is used anaerobic or the low material (as MCz-Si or FZ-Si) of oxygen concentration, but equipment cost and material cost are expensive.(2) use N-shaped Cz-Si or N-shaped polysilicon.(3) in p-type crystal silicon, use other alms giver (as gallium replaces boron), experimental results show that this replacement material is feasible.But shortcoming is that the segregation coefficient of Ga in silicon is low, use resistivity larger than the variation of boron-doping along crystal growth direction.(4) reduce the doping content of boron, use highly resistant material to make battery (as 5 ~ 10 Ω cm) but will make back surface field to obtain good back of the body contact.Although hence one can see that, above-mentioned several method can solve minority carrier life time attenuation problem, need to change the production technology of current P type silicon, increases and produces and equipment cost.
Summary of the invention
For the problem and shortage of above-mentioned existing existence, the object of this invention is to provide a kind of rear restoration methods of solar battery sheet efficiency decay that has efficient recovery solar battery efficiency.
For achieving the above object, the technical solution used in the present invention is restoration methods after a kind of solar battery sheet efficiency decay, comprises step
(a) choose cell piece, test its efficiency;
(b) cell piece is placed under light source, the accumulative total of being exposed to the sun irradiation is to taking out and be cooled to normal temperature after 5KW;
(c) cell piece later that is exposed to the sun is placed in temperature device, control temperature is 120-200 ℃, opens light source simultaneously, and heating is taken out cell piece with irradiation after 5-30 minute and is cooled to normal temperature.
Heating described in step (c) and irradiation time are 20min.
Temperature described in step (b) is 160 ℃ ± 5 ℃.
Described in step (b), light source is solar simulator
.
Beneficial effect
Compared with prior art, the present invention, by using annealing process, is restored the cell piece efficiency after decay, and beneficial effect is obvious, is suitable for promoting the use of.
Accompanying drawing explanation
Fig. 1 restoration methods schematic diagram provided by the invention;
Fig. 2 is solar battery sheet efficiency test result figure.
Embodiment
A restoration methods after solar battery sheet 2 efficiency decay, comprises step:
(a) choose cell piece 2, test its efficiency;
(b) cell piece 2 is placed under light source, the accumulative total of being exposed to the sun irradiation is to taking out and be cooled to normal temperature after 5KW;
(c) cell piece 2 later that is exposed to the sun is placed in temperature device 3, control temperature is 120-200 ℃, and being preferably is 160 ℃ ± 5 ℃, opens light source simultaneously, and heating is taken out cell piece 2 with irradiation after 5-30 minute and is cooled to normal temperature, is preferably 20 minutes.
Material function of the present invention and specification requirement:
A) light source 1 is required to meet solar simulator C grade standard or more excellent equipment.Its effect be cell piece 2 under strong illumination, charge carrier translational speed is the fastest, obtains the fastest regeneration rate.In annealing in process, be that irradiation intensity just affects the regeneration rate of cell piece 2.
C) temperature device 3 requires temperature adjustable within the scope of 120 ℃ ~ 200 ℃.The height that is temperature in annealing in process affects regeneration rate and the recovery value of cell piece 2.
The technology of the present invention treatment step:
A) choose a Battery pack sheet 2, test its efficiency;
C) cell piece 2 later that is exposed to the sun is placed in temperature device 3, it is 160 ℃ that temperature is controlled; Open light source, heating is taken out cell piece 2 after 20 minutes and is cooled to testing efficiency after normal temperature with irradiating simultaneously.
Claims (4)
1. a restoration methods after the decay of solar battery sheet (2) efficiency, is characterized in that: comprise step
(a) choose cell piece (2), test its efficiency;
(b) cell piece (2) is placed under light source, the accumulative total of being exposed to the sun irradiation is to taking out and be cooled to normal temperature after 5KW;
(c) cell piece (2) later that is exposed to the sun is placed in to temperature device (3) upper, control temperature is 120-200 ℃, opens light source simultaneously, and heating is taken out cell piece (2) with irradiation after 5-30 minute and is cooled to normal temperature.
2. solar battery sheet according to claim 1 (2) efficiency decay restoration methods, is characterized in that: the heating described in step (c) and irradiation time are 20min.
3. solar battery sheet according to claim 1 (2) efficiency decay restoration methods, is characterized in that: the temperature described in step (b) is 160 ℃ ± 5 ℃.
4. solar battery sheet according to claim 1 (2) efficiency decay restoration methods, is characterized in that: described in step (b), light source is solar simulator.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310628501.XA CN103681964A (en) | 2013-11-29 | 2013-11-29 | Method for restoring damped efficiency of solar cells |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310628501.XA CN103681964A (en) | 2013-11-29 | 2013-11-29 | Method for restoring damped efficiency of solar cells |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN103681964A true CN103681964A (en) | 2014-03-26 |
Family
ID=50318872
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310628501.XA Pending CN103681964A (en) | 2013-11-29 | 2013-11-29 | Method for restoring damped efficiency of solar cells |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103681964A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104810309A (en) * | 2015-04-25 | 2015-07-29 | 北京金晟阳光科技有限公司 | Roller way type solar cell sintering and radiation annealing integrated continuous furnace |
| CN104868010A (en) * | 2015-03-03 | 2015-08-26 | 晶澳（扬州）太阳能科技有限公司 | Method for reducing light induced attenuation of P type crystalline silicon solar cells and assemblies thereof by using strong light irradiation |
| CN104810309B (en) * | 2015-04-25 | 2018-02-09 | 北京金晟阳光科技有限公司 | Roller bed type solar cell sinters and radiation annealing one continuous oven |
| CN109004064A (en) * | 2018-07-26 | 2018-12-14 | 浙江晶科能源有限公司 | A kind of production method of p-type cell piece |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101478017A (en) * | 2009-01-09 | 2009-07-08 | 中电电气（南京）光伏有限公司 | Light induced attenuation characteristic improving method for crystalline silicon solar cell tablet and dedicated apparatus |
| CN201450015U (en) * | 2009-07-08 | 2010-05-05 | 中电电气（南京）光伏有限公司 | Device for improving photoinduced attenuation characteristic of crystalline silicon solar battery plate |
| WO2012167104A1 (en) * | 2011-06-03 | 2012-12-06 | Memc Singapore Pte, Ltd. | Processes for suppressing minority carrier lifetime degradation in silicon wafers |
-
2013
- 2013-11-29 CN CN201310628501.XA patent/CN103681964A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101478017A (en) * | 2009-01-09 | 2009-07-08 | 中电电气（南京）光伏有限公司 | Light induced attenuation characteristic improving method for crystalline silicon solar cell tablet and dedicated apparatus |
| CN201450015U (en) * | 2009-07-08 | 2010-05-05 | 中电电气（南京）光伏有限公司 | Device for improving photoinduced attenuation characteristic of crystalline silicon solar battery plate |
| WO2012167104A1 (en) * | 2011-06-03 | 2012-12-06 | Memc Singapore Pte, Ltd. | Processes for suppressing minority carrier lifetime degradation in silicon wafers |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104868010A (en) * | 2015-03-03 | 2015-08-26 | 晶澳（扬州）太阳能科技有限公司 | Method for reducing light induced attenuation of P type crystalline silicon solar cells and assemblies thereof by using strong light irradiation |
| CN104810309A (en) * | 2015-04-25 | 2015-07-29 | 北京金晟阳光科技有限公司 | Roller way type solar cell sintering and radiation annealing integrated continuous furnace |
| WO2016173472A1 (en) * | 2015-04-25 | 2016-11-03 | 北京金晟阳光科技有限公司 | Roller type solar cell sintering and irradiation annealing integrated continuous furnace |
| CN104810309B (en) * | 2015-04-25 | 2018-02-09 | 北京金晟阳光科技有限公司 | Roller bed type solar cell sinters and radiation annealing one continuous oven |
| CN109004064A (en) * | 2018-07-26 | 2018-12-14 | 浙江晶科能源有限公司 | A kind of production method of p-type cell piece |
| CN109004064B (en) * | 2018-07-26 | 2020-06-26 | 浙江晶科能源有限公司 | Manufacturing method of P-type battery piece |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Hallam et al. | Advanced hydrogenation of dislocation clusters and boron-oxygen defects in silicon solar cells | |
| KR102033800B1 (en) | Process for treating a heterojunction photovoltaic cell | |
| CN104201242B (en) | Improve boron doped p-type monocrystalline silicon battery photo attenuation device and using method thereof | |
| CN104505426B (en) | A kind of method and device improving crystal silicon solar battery component photo attenuation | |
| CN101478017B (en) | Light induced attenuation characteristic improving method for crystalline silicon solar cell tablet and dedicated apparatus | |
| CN102766908B (en) | The Boron diffusion method of crystal silicon solar energy battery | |
| CN104505424B (en) | A kind of devices and methods therefor reducing solaode photo attenuation | |
| CN103928535A (en) | PID resistance crystalline silicon battery and preparation method thereof | |
| CN101834224B (en) | Silicon wafer rapid heat treatment phosphorus diffusion gettering technology for manufacture of solar cell | |
| CN105789382A (en) | Method for improving light degradation of boron-doped crystalline silicon solar cell | |
| CN103681964A (en) | Method for restoring damped efficiency of solar cells | |
| CN103681889A (en) | Electret-structure-introduced efficient solar cell and preparing method thereof | |
| CN101857972B (en) | Silicon chip phosphorous diffusion impurity removal process for manufacturing solar cell | |
| CN107256904A (en) | For the method for handling semiconductor substrate, obtained semiconductor substrate and application thereof | |
| CN204966525U (en) | Improve volume production device of photic decay of P type crystal silicon battery fast | |
| CN105702804A (en) | Restoration method of silicon-based photovoltaic solar cells | |
| CN105261677B (en) | A kind of method of the quick photo attenuation of solar cell piece | |
| CN215118834U (en) | Light injection annealing device for sliced solar cell | |
| Song et al. | Laser induced localised hydrogen passivation | |
| CN107611005A (en) | The preparation method and its product of a kind of polysilicon membrane and the solar cell comprising the polysilicon membrane | |
| Mukherjee et al. | Modeling polycrystalline effects on the device characteristics of cdte based solar cells | |
| Fretwurst et al. | Survey of recent radiation damage studies at Hamburg | |
| Carrere et al. | Silicon bulk issues during processing of homo-heterojunction solar cells | |
| CN106328735A (en) | C-Si/a-Si/mc-Si solar cell structure and preparation method thereof | |
| CN107195698B (en) | A kind of deactivating process for the treatment of of antimony selenide thin-film solar cells back surface |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20140326 |