CN107195698B - A kind of deactivating process for the treatment of of antimony selenide thin-film solar cells back surface - Google Patents
A kind of deactivating process for the treatment of of antimony selenide thin-film solar cells back surface Download PDFInfo
- Publication number
- CN107195698B CN107195698B CN201710405484.1A CN201710405484A CN107195698B CN 107195698 B CN107195698 B CN 107195698B CN 201710405484 A CN201710405484 A CN 201710405484A CN 107195698 B CN107195698 B CN 107195698B
- Authority
- CN
- China
- Prior art keywords
- back surface
- antimony selenide
- solar cells
- film solar
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- OQRNKLRIQBVZHK-UHFFFAOYSA-N selanylideneantimony Chemical compound [Sb]=[Se] OQRNKLRIQBVZHK-UHFFFAOYSA-N 0.000 title claims abstract description 56
- 239000010409 thin film Substances 0.000 title claims abstract description 35
- 238000000034 method Methods 0.000 title abstract description 11
- 230000008569 process Effects 0.000 title description 8
- 239000010408 film Substances 0.000 claims abstract description 29
- 238000006243 chemical reaction Methods 0.000 claims abstract description 15
- 239000008367 deionised water Substances 0.000 claims abstract description 8
- 229910021641 deionized water Inorganic materials 0.000 claims abstract description 8
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 8
- 230000005693 optoelectronics Effects 0.000 claims abstract description 3
- 239000007864 aqueous solution Substances 0.000 claims description 17
- 238000003672 processing method Methods 0.000 claims description 12
- 150000002500 ions Chemical class 0.000 claims description 6
- 238000001035 drying Methods 0.000 claims description 5
- 239000011669 selenium Substances 0.000 claims description 4
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims description 3
- 238000004140 cleaning Methods 0.000 claims description 3
- 229910052711 selenium Inorganic materials 0.000 claims description 3
- 230000005611 electricity Effects 0.000 claims description 2
- 229910052787 antimony Inorganic materials 0.000 abstract description 11
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 abstract description 9
- 238000012545 processing Methods 0.000 abstract description 8
- 230000007547 defect Effects 0.000 description 12
- 238000001704 evaporation Methods 0.000 description 4
- 230000008020 evaporation Effects 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- 230000008859 change Effects 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 229910052980 cadmium sulfide Inorganic materials 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 2
- 238000013507 mapping Methods 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 231100000614 poison Toxicity 0.000 description 2
- 230000007096 poisonous effect Effects 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 239000000523 sample Substances 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- -1 antimony selenide Chemical class 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- GNZJTRGEKSBAAS-UHFFFAOYSA-N selanylideneantimony;selenium Chemical compound [Se].[Sb]=[Se].[Sb]=[Se] GNZJTRGEKSBAAS-UHFFFAOYSA-N 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000010129 solution processing Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1868—Passivation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a kind of methods of antimony selenide thin-film solar cells back surface processing, and antimony selenide hull cell is placed in thermal station；Then by ErCl3Solution drips to the back surface of selenizing antimony battery, and it is made to cover back surface, stands a period of time；Finally, battery device is placed on film applicator and is cleaned using deionized water, and dried, obtain the antimony selenide thin-film solar cells by back surface processing.This method can effectively reduce back electrode contact resistance, promote the collection of photo-generated carrier, improve fill factor, further increase the photoelectric conversion efficiency of antimony selenide thin-film solar cells.The present invention simply and effectively improves the back contacts characteristic of selenizing antimony battery, and then improves the opto-electronic conversion performance of battery, and technical support is provided for the development of hull cell.
Description
Technical field
The present invention relates to photovoltaic device designs preparing technical fields, more particularly to a kind of antimony selenide thin-film solar cells
The deactivating process for the treatment of of back surface, belongs to technical field of solar batteries.
Background technology
Solar energy power generating belongs to the maximum green power generation energy project of national encouragement dynamics." 13 " photovoltaic is planned
It points out to continue to keep comparatively fast to develop, gives priority to the solar cell of efficient, inexpensive, light, great industrial competitiveness.Closely
Come, research is green non-poisonous, preparation process is simple, novel thin film solar cell of low cost and efficient becomes hot spot.Ⅴ-
VI compounds of group antimony selenide (Sb2Se3) material because with energy gap it is suitable (~1.17eV, close to silicon 1.12eV, theoretical single-unit
Sb2Se3The efficiency of battery is up to 30% or more), the big (visible region of absorptivity>105cm-1, the light absorption system of amorphous silicon membrane
Number about 104cm-1), object phase simple and stable, can be achieved compared with low temperature (<300 DEG C) high-quality growth, low in raw material price, reserves are rich
The advantages such as rich, green non-poisonous, and be concerned.How to improve the photoelectric conversion efficiency of antimony selenide thin-film solar cells becomes
Emphasis.
The research of antimony selenide thin-film solar cells at present remains in primary stage, prepared antimony selenide hull cell
Photoelectric conversion efficiency it is low, it is a unique chain material to be primarily due to antimony selenide, and the interchain transmission of carrier is difficult, material
Expect the problems such as resistance is big, and doping concentration is low, causes the photogenerated current of antimony selenide hull cell smaller, fill factor is low.
Invention content
For existing antimony selenide battery preparation technology and Improvement requirement, the present invention provides a kind of antimony selenide thin film solars
The deactivating process for the treatment of of the back surface of battery, by using ErCl3Aqueous solution is passivated processing to its back surface, to reduce the back of the body
The contact resistance of electrode promotes the collection of photo-generated carrier, improves fill factor, improves the back of the body of antimony selenide thin-film solar cells
The collection efficiency of electrode, and then the photoelectric conversion efficiency of battery is improved, thus solve the antimony selenide hull cell of the prior art
Photogenerated current is smaller, and fill factor is low, the low technical problem of photoelectric conversion efficiency.
The present invention provides a kind of processing method of antimony selenide thin-film solar cells back surface, using ErCl3Aqueous solution pair
The back surface of antimony selenide thin-film solar cells is handled, and contact electricity of the back surface of the solar cell with back electrode is reduced
Resistance, increases collection efficiency of the back electrode to photo-generated carrier, improves the opto-electronic conversion of the antimony selenide thin-film solar cells
Efficiency；The back surface is selenizing Sb film.
Preferably, the ErCl3Er ions in aqueous solution can be passivated the surface of the back surface of the solar cell
Defect and grain boundary defects reduce defect concentration.
Preferably, the processing method can make the photoelectric conversion efficiency of the antimony selenide thin-film solar cells improve 1%
~2%.
Preferably, the processing method comprising following steps：
(1) antimony selenide thin-film solar cells is placed in thermal station；
(2) by ErCl3Aqueous solution is added drop-wise to the back surface of the antimony selenide thin-film solar cells, it is made to cover the back of the body
Surface, and stand, make the ErCl3Er ions in aqueous solution penetrate into the back surface, and the back surface is selenizing Sb film；
(3) deionized water is used to clean, the antimony selenide thin-film solar cells that obtains that treated after dry.
Preferably, the temperature of step (1) described thermal station is 60 DEG C~180 DEG C.
Preferably, the temperature of step (1) described thermal station is 60 DEG C~100 DEG C.
Preferably, step (2) ErCl3The concentration range of aqueous solution is 0.05M~0.5M.
Preferably, step (2) described time of repose is 10min~30min.
Preferably, step (3) cleaning carries out on film applicator.
Preferably, step (3) described drying means is drying.
In general, through the invention it is contemplated above technical scheme is compared with the prior art, can obtain down and show
Beneficial effect：
(1) present invention uses ErCl3Aqueous solution carries out back surface passivation processing, Er ion energy to antimony selenide solar cell
It is enough that antimony selenide film surface defects and grain boundary defects are passivated, antimony selenide surface and grain boundary defects are filled, it can be effective
The contact potential between antimony selenide surface and back electrode is reduced, increases back electrode to the collection efficiency of photo-generated carrier, Jin Erti
The photoelectric conversion efficiency of high selenizing antimony battery.
(2) deactivating process for the treatment of of antimony selenide thin-film solar cells back surface of the invention is simple and practicable, effectively changes
The back contacts characteristic of selenizing antimony battery has been apt to it, the photoelectric conversion efficiency of battery significantly improves.
Description of the drawings
Fig. 1 is the Kelvin probe surface potential Mapping of 3 obtained antimony selenide film surface of the embodiment of the present invention
Figure：(a) before handling；(b) after handling；
Fig. 2 is the current density voltage curve of 3 obtained antimony selenide hull cell of the embodiment of the present invention before and after the processing
Figure.
Specific implementation mode
In order to make the purpose , technical scheme and advantage of the present invention be clearer, with reference to embodiments and attached drawing, right
The present invention is further elaborated.It should be appreciated that the specific embodiments described herein are merely illustrative of the present invention, and
It is not used in the restriction present invention.As long as in addition, technical characteristic involved in the various embodiments of the present invention described below
It does not constitute a conflict with each other and can be combined with each other.
The deactivating process for the treatment of of antimony selenide thin-film solar cells back surface provided by the invention, using ErCl3Aqueous solution
Processing is passivated to the selenizing Sb film of antimony selenide thin-film solar cells back surface, passes through Er ion pair selenizing Sb film tables
Planar defect and grain boundary defects are passivated, and are filled antimony selenide film surface and grain boundary defects, are reduced the contact resistance of back electrode, are promoted
Into the collection of photo-generated carrier, the fill factor of battery is improved, to improve the antimony selenide hull cell photoelectric conversion efficiency.It is logical
The deactivating process for the treatment of is crossed, which can improve about 1%~2%.
Specifically, the deactivating process for the treatment of, includes the following steps：
(1) antimony selenide thin-film solar cells is placed in 60 DEG C~180 DEG C, in preferably 60 DEG C~100 DEG C of thermal station；
(2) by the ErCl of 0.05M~0.5M3Aqueous solution drips to the back surface of the antimony selenide hull cell, makes its covering back of the body
Surface, and 10min~30min is stood, so that Er ions is penetrated into selenizing Sb film, completes blunt to the defect of film surface and crystal boundary
Change.
(3) solar film battery is placed on film applicator and is cleaned using deionized water, Passivation Treatment is obtained after drying
Antimony selenide thin-film solar cells afterwards, the remaining ErCl of removal film surface that cleaning can be evenly on spin coater2It is molten
Liquid.
Antimony selenide thin-film cell structure according to the present invention is tin indium oxide (ITO)/cadmium sulfide/antimony selenide/gold electrode,
Processing method is before vapor deposition gold electrode (back electrode), to the selenium of tin indium oxide (ITO)/cadmium sulfide/antimony selenide structure battery
Change Sb film surface (back surface) to be handled, reduce the defect of antimony selenide film surface and crystal boundary, improves film quality, to
The contact berrier for reducing selenizing Sb film and gold electrode (back electrode), reduces the contact resistance of the back electrode of solar cell, increases
Add the utilization ratio to photo-generated carrier, improves the photoelectric conversion efficiency of the antimony selenide hull cell.
Embodiment 1：
(1) antimony selenide hull cell is placed in the thermal station that temperature is 60 DEG C；
(2) and then by the ErCl of 0.5M3Aqueous solution drips to the back surface of selenizing antimony battery, and it is made to cover back surface, quiet
Set 30min；
(3) battery device is placed on film applicator and is cleaned using deionized water, and dried；
(4) and then overleaf electrode evaporation obtains antimony selenide thin-film solar cells, and is carried out under standard sunlight to it
Current-voltage is tested.
Embodiment 2：
(1) antimony selenide hull cell is placed in the thermal station that temperature is 120 DEG C；
(2) and then by the ErCl of 0.2M3Aqueous solution drips to the back surface of selenizing antimony battery, and it is made to cover back surface, quiet
Set 20min；
(3) battery device is placed on film applicator and is cleaned using deionized water, and dried；
(4) and then overleaf electrode evaporation obtains antimony selenide thin-film solar cells, and is carried out under standard sunlight to it
Current-voltage is tested.
Embodiment 3：
(1) antimony selenide hull cell is placed in the thermal station that temperature is 160 DEG C；
(2) and then by the ErCl of 0.05M3Aqueous solution drips to the back surface of selenizing antimony battery, and it is made to cover back surface, quiet
Set 10min；
(3) battery device is placed on film applicator and is cleaned using deionized water, and dried；
(4) and then overleaf electrode evaporation obtains antimony selenide thin-film solar cells, and it has been carried out surface potential and
Current-voltage is tested under standard sunlight.
As shown in Figure 1, Fig. 1 (a) is the test result before processing, Fig. 1 (b) is Kelvin probe potential Mapping figures
ErCl3Test result after solution treatment, the results showed that the potential on antimony selenide surface is got higher after treatment, to reduce selenium
Change the contact berrier of antimony and back electrode, and the alternating temperature conductance experiment test by being carried out to selenizing Sb film, it was demonstrated that in film
Defect state is reduced, and improves film quality, is conducive to the separation and the collection efficiency that increase photo-generated carrier.
Test results are shown in figure 2 for current-voltage, and the short-circuit current density of battery is by 26.86mA/cm after processing2It carries
Height has arrived 29.44mA/cm2, fill factor has been increased to 56.56% by 53.76%, and photoelectric conversion efficiency is increased to by 5.43%
6.44%.
It can be seen that handling the antimony selenide thin-film solar cells obtained by the above method utilizes ErCl3Solution carries on the back it
Surface is passivated processing, reduces back contacts potential, can effectively facilitate the collection of photo-generated carrier, improves the filling of battery
The factor, the photoelectric conversion efficiency to further increase antimony selenide thin-film solar cells provide technical support.
Embodiment 4：
(1) antimony selenide hull cell is placed in the thermal station that temperature is 100 DEG C；
(2) and then by the ErCl of 0.05M3Aqueous solution drips to the back surface of selenizing antimony battery, and it is made to cover back surface, quiet
Set 10min；
(3) battery device is placed on film applicator and is cleaned using deionized water, and dried；
(4) and then overleaf electrode evaporation obtains antimony selenide thin-film solar cells, and it has been carried out surface potential and
Current-voltage is tested under standard sunlight.
As it will be easily appreciated by one skilled in the art that the foregoing is merely illustrative of the preferred embodiments of the present invention, not to
The limitation present invention, all within the spirits and principles of the present invention made by all any modification, equivalent and improvement etc., should all include
Within protection scope of the present invention.
Claims (8)
1. a kind of processing method of antimony selenide thin-film solar cells back surface, which is characterized in that use ErCl3Aqueous solution is to selenium
The back surface for changing Sb film solar cell is handled, and contact electricity of the back surface of the solar cell with back electrode is reduced
Resistance, increases collection efficiency of the back electrode to photo-generated carrier, improves the opto-electronic conversion of the antimony selenide thin-film solar cells
Efficiency；The back surface is selenizing Sb film.
2. processing method as described in claim 1, which is characterized in that it includes the following steps：
(1) antimony selenide thin-film solar cells is placed in thermal station；
(2) by ErCl3Aqueous solution is added drop-wise to the back surface of the antimony selenide thin-film solar cells, it is made to cover the back surface,
And stand, make the ErCl3Er ions in aqueous solution penetrate into the back surface, and the back surface is selenizing Sb film；
(3) deionized water is used to clean, the antimony selenide thin-film solar cells that obtains that treated after dry.
3. processing method as described in claim 2, which is characterized in that the temperature of step (1) described thermal station is 60 DEG C~180
℃。
4. processing method as described in claim 2, which is characterized in that the temperature of step (1) described thermal station is 60 DEG C~100
℃。
5. processing method as described in claim 2, which is characterized in that step (2) described ErCl3The concentration range of aqueous solution
For 0.05M~0.5M.
6. processing method as described in claim 2, which is characterized in that step (2) described time of repose be 10min~
30min。
7. processing method as described in claim 2, which is characterized in that step (3) cleaning carries out on film applicator.
8. processing method as described in claim 2, which is characterized in that step (3) described drying means is drying.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710405484.1A CN107195698B (en) | 2017-06-01 | 2017-06-01 | A kind of deactivating process for the treatment of of antimony selenide thin-film solar cells back surface |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710405484.1A CN107195698B (en) | 2017-06-01 | 2017-06-01 | A kind of deactivating process for the treatment of of antimony selenide thin-film solar cells back surface |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN107195698A CN107195698A (en) | 2017-09-22 |
| CN107195698B true CN107195698B (en) | 2018-07-31 |
Family
ID=59876832
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710405484.1A Active CN107195698B (en) | 2017-06-01 | 2017-06-01 | A kind of deactivating process for the treatment of of antimony selenide thin-film solar cells back surface |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107195698B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108447946B (en) * | 2018-04-20 | 2020-05-19 | 华中科技大学 | Flexible antimony selenide thin-film solar cell and preparation method thereof |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105556694A (en) * | 2013-09-25 | 2016-05-04 | 积水化学工业株式会社 | Thin film solar cell, semiconductor thin film and coating liquid for forming semiconductor |
-
2017
- 2017-06-01 CN CN201710405484.1A patent/CN107195698B/en active Active
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105556694A (en) * | 2013-09-25 | 2016-05-04 | 积水化学工业株式会社 | Thin film solar cell, semiconductor thin film and coating liquid for forming semiconductor |
Non-Patent Citations (2)
| Title |
|---|
| Lu3+/Yb3+ and Lu3+/Er3+ co-doped antimony selenide nanomaterials: synthesis,characterization, and electrical, thermoelectrical,and optical properties;Younes Hanifehpour etal;《Nanoscale Research Letters》;20131231;第8卷(第141期);全文 * |
| Synthesis and characterization of new LnxSb2-xSe3 (Ln: Yb3+, Er3+) nanoflowers and their physical properties;Abdolali Alemi etal;《Physica B》;20121231(第407期);全文 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN107195698A (en) | 2017-09-22 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN104134711B (en) | A kind of preparation method of perovskite solar cell | |
| CN107369764A (en) | A kind of perovskite solar cell and preparation method for adulterating lead acetate trihydrate | |
| CN110061136A (en) | A kind of back-contact perovskite solar cell and preparation method thereof | |
| CN104576929A (en) | Perovskite-lead sulfide quantum dot stacked solar cell and preparation method thereof | |
| CN103296211A (en) | Organic-two-dimensional crystal-inorganic hybrid heterojunction solar cell device and preparation method thereof | |
| CN104241411A (en) | Efficient cadmium telluride nanocrystalline Schottky junction solar cell with modified anode interface and preparing method thereof | |
| CN109216554B (en) | Perovskite solar cell with P3 HT/graphene as hole transport layer and preparation method thereof | |
| CN107195698B (en) | A kind of deactivating process for the treatment of of antimony selenide thin-film solar cells back surface | |
| CN102376783A (en) | Cuprous oxide solar battery with surface self-texture structure and manufacturing method thereof | |
| CN104916714B (en) | Organic photovoltaic cell taking La-TiO2 as electronic transmission layer and preparation method therefor | |
| CN107039554A (en) | A kind of cadmium telluride diaphragm solar battery and preparation method | |
| CN111162176A (en) | Preparation method for preparing organic solar cell with vertical phase gradient distribution photoactive layer by oscillation-assisted spin coating process | |
| CN206460967U (en) | A kind of cadmium telluride diaphragm solar battery | |
| CN112885967B (en) | Double-layer organic solar cell based on delayed fluorescent material and preparation method | |
| CN109378388A (en) | Efficient ternary organic solar batteries and preparation method thereof | |
| CN205141029U (en) | But place upside down hydridization perovskite solar battery device of solution spin coating | |
| CN101901872B (en) | Treatment method of photoelectric active layer of polymer solar cell | |
| CN111180588B (en) | Thick-film organic solar cell based on continuous blade coating double-body heterojunction and preparation method thereof | |
| CN106024396B (en) | It is a kind of for dye-sensitized solar cells to electrode and preparation method thereof | |
| CN109326716A (en) | Non- fullerene organic solar batteries and preparation method thereof | |
| CN105185914A (en) | Organic photovoltaic cell with active layer doped with upper-conversion material, and preparation method thereof | |
| CN110993802A (en) | Polymer solar cell based on surface modified cathode buffer layer | |
| CN109411608A (en) | A kind of preparation method with patch structure perovskite thin film | |
| CN103928617A (en) | Method for manufacturing high-conductivity organic thin-film solar photovoltaic cells | |
| CN109360891A (en) | A kind of organic solar batteries and preparation method thereof containing natural extract |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |