CN104201242B - Improve boron doped p-type monocrystalline silicon battery photo attenuation device and using method thereof - Google Patents
Improve boron doped p-type monocrystalline silicon battery photo attenuation device and using method thereof Download PDFInfo
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- CN104201242B CN104201242B CN201410447653.4A CN201410447653A CN104201242B CN 104201242 B CN104201242 B CN 104201242B CN 201410447653 A CN201410447653 A CN 201410447653A CN 104201242 B CN104201242 B CN 104201242B
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- battery
- monocrystalline silicon
- power supply
- boron doped
- attenuation device
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- 238000000034 method Methods 0.000 title claims abstract description 22
- 229910052796 boron Inorganic materials 0.000 title claims abstract description 18
- 229910021421 monocrystalline silicon Inorganic materials 0.000 title claims abstract description 18
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 title claims abstract description 17
- 238000010438 heat treatment Methods 0.000 claims abstract description 30
- 239000000523 sample Substances 0.000 claims abstract description 17
- 238000005286 illumination Methods 0.000 claims abstract description 16
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- 239000004411 aluminium Substances 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- 229910052736 halogen Inorganic materials 0.000 claims description 3
- 150000002367 halogens Chemical class 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000004904 shortening Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Battery Electrode And Active Subsutance (AREA)
Abstract
The invention discloses one and improve boron doped p-type monocrystalline silicon battery photo attenuation device and using method thereof, this device comprises casing, light source, probe row, heating station and power supply, the positive pole of power supply and heating station are electrically connected, and the negative pole of power supply and probe are arranged and be electrically connected; When pending battery is placed on heating station, light source is positioned at the top of pending battery for use in the pending battery of illumination, and probe row pressure is on the main grid of pending battery front side.The present invention can effectively shorten the Battery disposal time, thus reduces costs, and realizes industrialization and produces.
Description
Technical field
The present invention relates to one and improve boron doped p-type monocrystalline silicon battery photo attenuation device and using method thereof, belong to technical field of solar cells.
Background technology
At present, photo attenuation (light-induceddegradation:LID) refers to the crystal silicon solar batteries phenomenon that battery efficiency declines after illumination, the most obvious in P type single crystal battery, attenuation ratio can reach the 3%-5% that compares, particularly efficient p type single crystal silicon battery, its decay can be increased to 5 ~ 7%, the IEC standard-required more than 5%, thus seriously limits its commercial applications.Current general approved explanation is owing to causing in B-O complex centre, and elimination known at present or the method reducing this decay mainly reduce B or O content in silicon chip, and gallium or indium replace B as P-type dopant, or adopts P as N-type dopant.But these methods all also exist the shortcoming that production cost increases, and are therefore unfavorable for suitability for industrialized production.Propose one in the Chinese patent of application number CN20091002812.9 and first cell piece is carried out annealing in process, and then carry out the method for illumination heating, but need 4 hours, processing time is long is not suitable for volume production, the method adopting energising heating is refer in the patent of application number CN201410022208.3 in addition, same needs 30 ~ 180min, has difficulties equally in volume production process.
Summary of the invention
Technical problem to be solved by this invention is the defect overcoming prior art, and provide one to improve boron doped p-type monocrystalline silicon battery photo attenuation device, it can effectively shorten the Battery disposal time, thus reduces costs, and realizes industrialization and produces.
In order to solve the problems of the technologies described above, technical scheme of the present invention is: one improves boron doped p-type monocrystalline silicon battery photo attenuation device, it comprises casing, light source, probe row, heating station and power supply, and the positive pole of power supply and heating station are electrically connected, and the negative pole of power supply and probe are arranged and be electrically connected; When pending battery is placed on heating station, described light source is positioned at the top of pending battery for use in the pending battery of illumination, and probe row pressure is on the main grid of pending battery front side.
Further, described light source is at least one in LED, Halogen lamp LED and Flash lamp.
Further, described heating station is that copper material or aluminium are made.
Present invention also offers a kind of using method improving boron doped p-type monocrystalline silicon battery photo attenuation device, it comprises following steps:
A pending battery is placed on heating station and heats it by ();
(b) by probe row pressure on the main grid in the front of pending battery;
C () is opened light source and is treated treatment of battery and carry out illumination, and treat treatment of battery by power supply simultaneously and carry out being energized and add illumination a period of time;
D battery after process is cooled to room temperature by ();
E () carries out test and classify.
Further, the irradiance of described light source is 0.1kW/m
2~ 10kW/m
2.
Further, described power supply is DC constant current power supply, and the current density treating the direct current that treatment of battery applies is 10 ~ 1000mA/cm
2.
Further, in described step (c), the processing time is 0.01 ~ 60min.
After have employed technique scheme, the light source of apparatus of the present invention is mainly used in treating treatment of battery and carries out illumination, heating station is used for treating treatment of battery and heats, power supply, pending battery, heating station and probe row's formation conductive loops is used for treating treatment of battery and is energized, by combining in conjunction with illumination, energising and heating three kinds thus effectively shortening the Battery disposal time, make it to be less than 60min, thus reduce costs, realize industrialization and produce.
Accompanying drawing explanation
Fig. 1 is the structural representation improving boron doped p-type monocrystalline silicon battery photo attenuation device of the present invention.
Embodiment
In order to make content of the present invention more easily be clearly understood, below according to specific embodiment also by reference to the accompanying drawings, the present invention is further detailed explanation.
As shown in Figure 1, one improves boron doped p-type monocrystalline silicon battery photo attenuation device, and it comprises casing 6, light source 1, probe row 2, heating station 4 and power supply 5, and positive pole and the heating station 4 of power supply 5 are electrically connected, and the negative pole of power supply 5 and probe are arranged 2 and be electrically connected; When pending battery 3 is placed on heating station 4, light source 1 is positioned at the top of pending battery 3 for use in the pending battery 3 of illumination, and probe row pressure is on the main grid of pending battery front side.
Light source 1 is at least one in LED, Halogen lamp LED and Flash lamp.
Heating station 4 is made for copper material or aluminium.
The using method of this improvement boron doped p-type monocrystalline silicon battery photo attenuation device comprises following steps:
A pending battery 3 is placed on heating station 4 and heats it by ();
B probe row 2 is pressed on the main grid in the front of pending battery 3 by ();
C () is opened light source 1 and is treated treatment of battery 3 and carry out illumination, and treat treatment of battery 3 by power supply 5 simultaneously and carry out being energized and add illumination a period of time;
D battery after process is cooled to room temperature by ();
E () carries out test and classify.
The irradiance of light source 1 is 0.1kW/m
2~ 10kW/m
2.
Power supply 5 is DC constant current power supply, and the current density treating the direct current that treatment of battery 3 applies is 10 ~ 1000mA/cm
2.
In step (c), the processing time is 0.01 ~ 60min.
The heating of heating station 4 can adopt any mode of heating, as Resistant heating.
Operation principle of the present invention is as follows:
The light source 1 of apparatus of the present invention is mainly used in treating treatment of battery 3 and carries out illumination, heating station 4 heats for treating treatment of battery, power supply 5, pending battery 3, a heating station 4 and probe row 2 formation conductive loops is used for treating treatment of battery 3 and is energized, by combining in conjunction with illumination, energising and heating three kinds thus effectively shortening the Battery disposal time, make it to be less than 60min, thus reduce costs, realize industrialization and produce.
Above-described specific embodiment; technical problem, technical scheme and beneficial effect that the present invention solves are further described; be understood that; the foregoing is only specific embodiments of the invention; be not limited to the present invention; within the spirit and principles in the present invention all, any amendment made, equivalent replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (6)
1. one kind is improved the using method of boron doped p-type monocrystalline silicon battery photo attenuation device, improve boron doped p-type monocrystalline silicon battery photo attenuation device and comprise casing (6), light source (1), probe row (2), heating station (4) and power supply (5), positive pole and the heating station (4) of power supply (5) are electrically connected, and the negative pole of power supply (5) and probe are arranged (2) and be electrically connected; When pending battery (3) is placed on heating station (4), described light source (1) is positioned at the top of pending battery (3) for use in the pending battery of illumination (3), probe row pressure, on the main grid of pending battery front side, is characterized in that using method comprises following steps:
A pending battery (3) is placed on heating station (4) and heats it by ();
B probe row (2) is pressed on the main grid in the front of pending battery (3) by ();
C () is opened light source (1) and is treated treatment of battery (3) and carry out illumination, and treat treatment of battery (3) by power supply (5) simultaneously and carry out being energized and add illumination a period of time;
D battery after process is cooled to room temperature by ();
E () carries out test and classify.
2. the using method improving boron doped p-type monocrystalline silicon battery photo attenuation device according to claim 1, is characterized in that: the irradiance of described light source (1) is 0.1kW/m
2~ 10kW/m
2.
3. the using method improving boron doped p-type monocrystalline silicon battery photo attenuation device according to claim 1, it is characterized in that: described power supply (5) is DC constant current power supply, the current density treating the direct current that treatment of battery (3) applies is 10 ~ 1000mA/cm
2.
4. the using method improving boron doped p-type monocrystalline silicon battery photo attenuation device according to claim 1, it is characterized in that: in described step (c), the processing time is 0.01 ~ 60min.
5. the using method improving boron doped p-type monocrystalline silicon battery photo attenuation device according to claim 1, is characterized in that: described light source (1) is LED, at least one in Halogen lamp LED and Flash lamp.
6. the using method improving boron doped p-type monocrystalline silicon battery photo attenuation device according to claim 1, is characterized in that: described heating station (4) is made for copper material or aluminium.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410447653.4A CN104201242B (en) | 2014-09-03 | 2014-09-03 | Improve boron doped p-type monocrystalline silicon battery photo attenuation device and using method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410447653.4A CN104201242B (en) | 2014-09-03 | 2014-09-03 | Improve boron doped p-type monocrystalline silicon battery photo attenuation device and using method thereof |
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| Publication Number | Publication Date |
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| CN104201242A CN104201242A (en) | 2014-12-10 |
| CN104201242B true CN104201242B (en) | 2016-04-06 |
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Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104868010B (en) * | 2015-03-03 | 2017-06-13 | 晶澳（扬州）太阳能科技有限公司 | A kind of method that utilization high light irradiation reduces P-type crystal silicon solar cell and its component photo attenuation |
| CN104795469A (en) * | 2015-04-25 | 2015-07-22 | 北京金晟阳光科技有限公司 | Roller-way-type solar cell irradiation annealing furnace |
| CN105140347B (en) * | 2015-09-21 | 2017-03-08 | 中节能太阳能科技（镇江）有限公司 | Quickly improve mass production device and its using method of p-type crystal silicon battery photo attenuation |
| CN107230650B (en) * | 2017-06-01 | 2020-09-11 | 常州时创能源股份有限公司 | Rapid sample preparation equipment for solar cell light attenuation test |
| CN108565304B (en) * | 2018-04-24 | 2020-04-07 | 泰州隆基乐叶光伏科技有限公司 | Anti-attenuation boron-doped battery assembly and production method thereof |
| CN108899392A (en) * | 2018-06-22 | 2018-11-27 | 江苏微导纳米装备科技有限公司 | A kind of method of the electrical pumping optimization process time of determining monocrystalline silicon battery |
| CN113241390A (en) * | 2021-04-28 | 2021-08-10 | 天津爱旭太阳能科技有限公司 | Light injection method and system for crystalline silicon solar cell and cell |
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| CN201716394U (en) * | 2010-07-19 | 2011-01-19 | 常州天合光能有限公司 | Solar cell attenuation testing equipment |
| CN202564426U (en) * | 2012-04-13 | 2012-11-28 | 上海超日(洛阳)太阳能有限公司 | Polycrystalline silicon cell piece optical attenuation box |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101478017B (en) * | 2009-01-09 | 2012-06-27 | 中电电气（南京）光伏有限公司 | Light induced attenuation characteristic improving method for crystalline silicon solar cell tablet and dedicated apparatus |
| CN102034897B (en) * | 2010-10-15 | 2012-08-08 | 苏州阿特斯阳光电力科技有限公司 | Aging device and method for electrically attenuating crystalline silicon solar cells |
| CN102479875A (en) * | 2010-11-30 | 2012-05-30 | 江苏顺风光电科技有限公司 | Solar cell attenuation device |
| CN103762275B (en) * | 2014-01-17 | 2017-01-18 | 苏州阿特斯阳光电力科技有限公司 | Attenuation method and device of crystalline silicon solar cells |
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Patent Citations (2)
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|---|---|---|---|---|
| CN201716394U (en) * | 2010-07-19 | 2011-01-19 | 常州天合光能有限公司 | Solar cell attenuation testing equipment |
| CN202564426U (en) * | 2012-04-13 | 2012-11-28 | 上海超日(洛阳)太阳能有限公司 | Polycrystalline silicon cell piece optical attenuation box |
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Address after: Solar photovoltaic industry park Tianhe Road 213031 north of Jiangsu Province, Changzhou City, No. 2 Patentee after: TRINASOLAR Co.,Ltd. Address before: Solar photovoltaic industry park Tianhe Road 213031 north of Jiangsu Province, Changzhou City, No. 2 Patentee before: trina solar Ltd. |
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Address after: Solar photovoltaic industry park Tianhe Road 213031 north of Jiangsu Province, Changzhou City, No. 2 Patentee after: trina solar Ltd. Address before: Tianhe Electronic Industrial Park Road 213022 north of Jiangsu Province, Changzhou City, No. 2 Patentee before: CHANGZHOU TRINA SOLAR ENERGY Co.,Ltd. |