CN104201242B - Improve boron doped p-type monocrystalline silicon battery photo attenuation device and using method thereof - Google Patents

Improve boron doped p-type monocrystalline silicon battery photo attenuation device and using method thereof Download PDF

Info

Publication number
CN104201242B
CN104201242B CN201410447653.4A CN201410447653A CN104201242B CN 104201242 B CN104201242 B CN 104201242B CN 201410447653 A CN201410447653 A CN 201410447653A CN 104201242 B CN104201242 B CN 104201242B
Authority
CN
China
Prior art keywords
battery
monocrystalline silicon
power supply
boron doped
attenuation device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201410447653.4A
Other languages
Chinese (zh)
Other versions
CN104201242A (en
Inventor
王子港
陈奕峰
崔艳峰
皮尔·威灵顿
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Trina Solar Co Ltd
Original Assignee
Changzhou Trina Solar Energy Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Changzhou Trina Solar Energy Co Ltd filed Critical Changzhou Trina Solar Energy Co Ltd
Priority to CN201410447653.4A priority Critical patent/CN104201242B/en
Publication of CN104201242A publication Critical patent/CN104201242A/en
Application granted granted Critical
Publication of CN104201242B publication Critical patent/CN104201242B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/186Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Battery Electrode And Active Subsutance (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

The invention discloses one and improve boron doped p-type monocrystalline silicon battery photo attenuation device and using method thereof, this device comprises casing, light source, probe row, heating station and power supply, the positive pole of power supply and heating station are electrically connected, and the negative pole of power supply and probe are arranged and be electrically connected; When pending battery is placed on heating station, light source is positioned at the top of pending battery for use in the pending battery of illumination, and probe row pressure is on the main grid of pending battery front side.The present invention can effectively shorten the Battery disposal time, thus reduces costs, and realizes industrialization and produces.

Description

Improve boron doped p-type monocrystalline silicon battery photo attenuation device and using method thereof
Technical field
The present invention relates to one and improve boron doped p-type monocrystalline silicon battery photo attenuation device and using method thereof, belong to technical field of solar cells.
Background technology
At present, photo attenuation (light-induceddegradation:LID) refers to the crystal silicon solar batteries phenomenon that battery efficiency declines after illumination, the most obvious in P type single crystal battery, attenuation ratio can reach the 3%-5% that compares, particularly efficient p type single crystal silicon battery, its decay can be increased to 5 ~ 7%, the IEC standard-required more than 5%, thus seriously limits its commercial applications.Current general approved explanation is owing to causing in B-O complex centre, and elimination known at present or the method reducing this decay mainly reduce B or O content in silicon chip, and gallium or indium replace B as P-type dopant, or adopts P as N-type dopant.But these methods all also exist the shortcoming that production cost increases, and are therefore unfavorable for suitability for industrialized production.Propose one in the Chinese patent of application number CN20091002812.9 and first cell piece is carried out annealing in process, and then carry out the method for illumination heating, but need 4 hours, processing time is long is not suitable for volume production, the method adopting energising heating is refer in the patent of application number CN201410022208.3 in addition, same needs 30 ~ 180min, has difficulties equally in volume production process.
Summary of the invention
Technical problem to be solved by this invention is the defect overcoming prior art, and provide one to improve boron doped p-type monocrystalline silicon battery photo attenuation device, it can effectively shorten the Battery disposal time, thus reduces costs, and realizes industrialization and produces.
In order to solve the problems of the technologies described above, technical scheme of the present invention is: one improves boron doped p-type monocrystalline silicon battery photo attenuation device, it comprises casing, light source, probe row, heating station and power supply, and the positive pole of power supply and heating station are electrically connected, and the negative pole of power supply and probe are arranged and be electrically connected; When pending battery is placed on heating station, described light source is positioned at the top of pending battery for use in the pending battery of illumination, and probe row pressure is on the main grid of pending battery front side.
Further, described light source is at least one in LED, Halogen lamp LED and Flash lamp.
Further, described heating station is that copper material or aluminium are made.
Present invention also offers a kind of using method improving boron doped p-type monocrystalline silicon battery photo attenuation device, it comprises following steps:
A pending battery is placed on heating station and heats it by ();
(b) by probe row pressure on the main grid in the front of pending battery;
C () is opened light source and is treated treatment of battery and carry out illumination, and treat treatment of battery by power supply simultaneously and carry out being energized and add illumination a period of time;
D battery after process is cooled to room temperature by ();
E () carries out test and classify.
Further, the irradiance of described light source is 0.1kW/m 2~ 10kW/m 2.
Further, described power supply is DC constant current power supply, and the current density treating the direct current that treatment of battery applies is 10 ~ 1000mA/cm 2.
Further, in described step (c), the processing time is 0.01 ~ 60min.
After have employed technique scheme, the light source of apparatus of the present invention is mainly used in treating treatment of battery and carries out illumination, heating station is used for treating treatment of battery and heats, power supply, pending battery, heating station and probe row's formation conductive loops is used for treating treatment of battery and is energized, by combining in conjunction with illumination, energising and heating three kinds thus effectively shortening the Battery disposal time, make it to be less than 60min, thus reduce costs, realize industrialization and produce.
Accompanying drawing explanation
Fig. 1 is the structural representation improving boron doped p-type monocrystalline silicon battery photo attenuation device of the present invention.
Embodiment
In order to make content of the present invention more easily be clearly understood, below according to specific embodiment also by reference to the accompanying drawings, the present invention is further detailed explanation.
As shown in Figure 1, one improves boron doped p-type monocrystalline silicon battery photo attenuation device, and it comprises casing 6, light source 1, probe row 2, heating station 4 and power supply 5, and positive pole and the heating station 4 of power supply 5 are electrically connected, and the negative pole of power supply 5 and probe are arranged 2 and be electrically connected; When pending battery 3 is placed on heating station 4, light source 1 is positioned at the top of pending battery 3 for use in the pending battery 3 of illumination, and probe row pressure is on the main grid of pending battery front side.
Light source 1 is at least one in LED, Halogen lamp LED and Flash lamp.
Heating station 4 is made for copper material or aluminium.
The using method of this improvement boron doped p-type monocrystalline silicon battery photo attenuation device comprises following steps:
A pending battery 3 is placed on heating station 4 and heats it by ();
B probe row 2 is pressed on the main grid in the front of pending battery 3 by ();
C () is opened light source 1 and is treated treatment of battery 3 and carry out illumination, and treat treatment of battery 3 by power supply 5 simultaneously and carry out being energized and add illumination a period of time;
D battery after process is cooled to room temperature by ();
E () carries out test and classify.
The irradiance of light source 1 is 0.1kW/m 2~ 10kW/m 2.
Power supply 5 is DC constant current power supply, and the current density treating the direct current that treatment of battery 3 applies is 10 ~ 1000mA/cm 2.
In step (c), the processing time is 0.01 ~ 60min.
The heating of heating station 4 can adopt any mode of heating, as Resistant heating.
Operation principle of the present invention is as follows:
The light source 1 of apparatus of the present invention is mainly used in treating treatment of battery 3 and carries out illumination, heating station 4 heats for treating treatment of battery, power supply 5, pending battery 3, a heating station 4 and probe row 2 formation conductive loops is used for treating treatment of battery 3 and is energized, by combining in conjunction with illumination, energising and heating three kinds thus effectively shortening the Battery disposal time, make it to be less than 60min, thus reduce costs, realize industrialization and produce.
Above-described specific embodiment; technical problem, technical scheme and beneficial effect that the present invention solves are further described; be understood that; the foregoing is only specific embodiments of the invention; be not limited to the present invention; within the spirit and principles in the present invention all, any amendment made, equivalent replacement, improvement etc., all should be included within protection scope of the present invention.

Claims (6)

1. one kind is improved the using method of boron doped p-type monocrystalline silicon battery photo attenuation device, improve boron doped p-type monocrystalline silicon battery photo attenuation device and comprise casing (6), light source (1), probe row (2), heating station (4) and power supply (5), positive pole and the heating station (4) of power supply (5) are electrically connected, and the negative pole of power supply (5) and probe are arranged (2) and be electrically connected; When pending battery (3) is placed on heating station (4), described light source (1) is positioned at the top of pending battery (3) for use in the pending battery of illumination (3), probe row pressure, on the main grid of pending battery front side, is characterized in that using method comprises following steps:
A pending battery (3) is placed on heating station (4) and heats it by ();
B probe row (2) is pressed on the main grid in the front of pending battery (3) by ();
C () is opened light source (1) and is treated treatment of battery (3) and carry out illumination, and treat treatment of battery (3) by power supply (5) simultaneously and carry out being energized and add illumination a period of time;
D battery after process is cooled to room temperature by ();
E () carries out test and classify.
2. the using method improving boron doped p-type monocrystalline silicon battery photo attenuation device according to claim 1, is characterized in that: the irradiance of described light source (1) is 0.1kW/m 2~ 10kW/m 2.
3. the using method improving boron doped p-type monocrystalline silicon battery photo attenuation device according to claim 1, it is characterized in that: described power supply (5) is DC constant current power supply, the current density treating the direct current that treatment of battery (3) applies is 10 ~ 1000mA/cm 2.
4. the using method improving boron doped p-type monocrystalline silicon battery photo attenuation device according to claim 1, it is characterized in that: in described step (c), the processing time is 0.01 ~ 60min.
5. the using method improving boron doped p-type monocrystalline silicon battery photo attenuation device according to claim 1, is characterized in that: described light source (1) is LED, at least one in Halogen lamp LED and Flash lamp.
6. the using method improving boron doped p-type monocrystalline silicon battery photo attenuation device according to claim 1, is characterized in that: described heating station (4) is made for copper material or aluminium.
CN201410447653.4A 2014-09-03 2014-09-03 Improve boron doped p-type monocrystalline silicon battery photo attenuation device and using method thereof Active CN104201242B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201410447653.4A CN104201242B (en) 2014-09-03 2014-09-03 Improve boron doped p-type monocrystalline silicon battery photo attenuation device and using method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201410447653.4A CN104201242B (en) 2014-09-03 2014-09-03 Improve boron doped p-type monocrystalline silicon battery photo attenuation device and using method thereof

Publications (2)

Publication Number Publication Date
CN104201242A CN104201242A (en) 2014-12-10
CN104201242B true CN104201242B (en) 2016-04-06

Family

ID=52086508

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201410447653.4A Active CN104201242B (en) 2014-09-03 2014-09-03 Improve boron doped p-type monocrystalline silicon battery photo attenuation device and using method thereof

Country Status (1)

Country Link
CN (1) CN104201242B (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104868010B (en) * 2015-03-03 2017-06-13 晶澳(扬州)太阳能科技有限公司 A kind of method that utilization high light irradiation reduces P-type crystal silicon solar cell and its component photo attenuation
CN104795469A (en) * 2015-04-25 2015-07-22 北京金晟阳光科技有限公司 Roller-way-type solar cell irradiation annealing furnace
CN105140347B (en) * 2015-09-21 2017-03-08 中节能太阳能科技(镇江)有限公司 Quickly improve mass production device and its using method of p-type crystal silicon battery photo attenuation
CN107230650B (en) * 2017-06-01 2020-09-11 常州时创能源股份有限公司 Rapid sample preparation equipment for solar cell light attenuation test
CN108565304B (en) * 2018-04-24 2020-04-07 泰州隆基乐叶光伏科技有限公司 Anti-attenuation boron-doped battery assembly and production method thereof
CN108899392A (en) * 2018-06-22 2018-11-27 江苏微导纳米装备科技有限公司 A kind of method of the electrical pumping optimization process time of determining monocrystalline silicon battery
CN113241390A (en) * 2021-04-28 2021-08-10 天津爱旭太阳能科技有限公司 Light injection method and system for crystalline silicon solar cell and cell

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN201716394U (en) * 2010-07-19 2011-01-19 常州天合光能有限公司 Solar cell attenuation testing equipment
CN202564426U (en) * 2012-04-13 2012-11-28 上海超日(洛阳)太阳能有限公司 Polycrystalline silicon cell piece optical attenuation box

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101478017B (en) * 2009-01-09 2012-06-27 中电电气(南京)光伏有限公司 Light induced attenuation characteristic improving method for crystalline silicon solar cell tablet and dedicated apparatus
CN102034897B (en) * 2010-10-15 2012-08-08 苏州阿特斯阳光电力科技有限公司 Aging device and method for electrically attenuating crystalline silicon solar cells
CN102479875A (en) * 2010-11-30 2012-05-30 江苏顺风光电科技有限公司 Solar cell attenuation device
CN103762275B (en) * 2014-01-17 2017-01-18 苏州阿特斯阳光电力科技有限公司 Attenuation method and device of crystalline silicon solar cells

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN201716394U (en) * 2010-07-19 2011-01-19 常州天合光能有限公司 Solar cell attenuation testing equipment
CN202564426U (en) * 2012-04-13 2012-11-28 上海超日(洛阳)太阳能有限公司 Polycrystalline silicon cell piece optical attenuation box

Also Published As

Publication number Publication date
CN104201242A (en) 2014-12-10

Similar Documents

Publication Publication Date Title
CN104201242B (en) Improve boron doped p-type monocrystalline silicon battery photo attenuation device and using method thereof
CN104078403A (en) Mass production device capable of rapidly reducing light-induced degradation of crystalline silicon solar cells
CN104505424B (en) A kind of devices and methods therefor reducing solaode photo attenuation
CN204905279U (en) Solar battery fritting furnace of anti photic decay
CN105140347A (en) Mass-production apparatus capable of fast improving photoinduced degradation of a P-type crystalline silicon cell and using method thereof
CN204966525U (en) Improve volume production device of photic decay of P type crystal silicon battery fast
CN102034897B (en) Aging device and method for electrically attenuating crystalline silicon solar cells
CN204558429U (en) A kind of device reducing photo attenuation
CN203967054U (en) Improve fast the mass production device of crystal silicon solar battery photo attenuation
CN204045607U (en) A kind of solar module with integrated optimization device
CN103681964A (en) Method for restoring damped efficiency of solar cells
CN204859082U (en) Photovoltaic solar device
CN203349166U (en) Solar simulator
CN101752105A (en) Dye sensitized solar cell electrode doped with carbon nano tube and preparation method thereof
CN104251465A (en) Solar simulator and spectrum adjusting method
CN205683989U (en) A kind of energy-conservation polymerization kettle temperature raising water system
CN104638051B (en) A kind of method of acceleration for stabilization cadmium telluride diaphragm solar module peak power
CN206023680U (en) A kind of solar panels of large area optically focused
CN205320330U (en) Novel LED integrated optical source circuit
CN204560656U (en) A kind of automatic temperature control fish tank
CN205582958U (en) Take treatment facility of turning device's photic attenuation rate of reduction photovoltaic module
CN204329306U (en) A kind of solar energy drives electrically heated hot water apparatus stage by stage
CN201110493Y (en) Wind energy and light energy complementary energy-saving type corridor illuminating apparatus
CN104240567A (en) Light condensation type solar cell demonstration board
CN103451094A (en) Solar biogas circulating system

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
CP01 Change in the name or title of a patent holder
CP01 Change in the name or title of a patent holder

Address after: Solar photovoltaic industry park Tianhe Road 213031 north of Jiangsu Province, Changzhou City, No. 2

Patentee after: TRINASOLAR Co.,Ltd.

Address before: Solar photovoltaic industry park Tianhe Road 213031 north of Jiangsu Province, Changzhou City, No. 2

Patentee before: trina solar Ltd.

CP03 Change of name, title or address
CP03 Change of name, title or address

Address after: Solar photovoltaic industry park Tianhe Road 213031 north of Jiangsu Province, Changzhou City, No. 2

Patentee after: trina solar Ltd.

Address before: Tianhe Electronic Industrial Park Road 213022 north of Jiangsu Province, Changzhou City, No. 2

Patentee before: CHANGZHOU TRINA SOLAR ENERGY Co.,Ltd.