CN105140347B - Quickly improve mass production device and its using method of p-type crystal silicon battery photo attenuation - Google Patents
Quickly improve mass production device and its using method of p-type crystal silicon battery photo attenuation Download PDFInfo
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- CN105140347B CN105140347B CN201510605491.7A CN201510605491A CN105140347B CN 105140347 B CN105140347 B CN 105140347B CN 201510605491 A CN201510605491 A CN 201510605491A CN 105140347 B CN105140347 B CN 105140347B
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- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 104
- 239000010703 silicon Substances 0.000 title claims abstract description 104
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 103
- 239000013078 crystal Substances 0.000 title claims abstract description 42
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 30
- 238000000034 method Methods 0.000 title claims abstract description 21
- 238000003475 lamination Methods 0.000 claims abstract description 7
- 230000005611 electricity Effects 0.000 claims description 7
- 239000000523 sample Substances 0.000 claims description 7
- 238000012360 testing method Methods 0.000 claims description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- 238000009413 insulation Methods 0.000 claims description 6
- 239000012212 insulator Substances 0.000 claims description 6
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 5
- 229920005591 polysilicon Polymers 0.000 claims description 5
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- 238000005457 optimization Methods 0.000 abstract description 2
- 238000001816 cooling Methods 0.000 description 5
- XGCTUKUCGUNZDN-UHFFFAOYSA-N [B].O=O Chemical compound [B].O=O XGCTUKUCGUNZDN-UHFFFAOYSA-N 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 238000009423 ventilation Methods 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical group [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 238000005086 pumping Methods 0.000 description 2
- 230000002277 temperature effect Effects 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- LBZRRXXISSKCHV-UHFFFAOYSA-N [B].[O] Chemical group [B].[O] LBZRRXXISSKCHV-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1876—Particular processes or apparatus for batch treatment of the devices
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
The present invention discloses a kind of quick mass production device improving p-type crystal silicon battery photo attenuation, including power supply, calorstat, the conveyer belt running through described calorstat and the silicon wafer bearing box being arranged on described conveyer belt；Described silicon wafer bearing box includes conductive layer and lower conductiving layer, and described upper conductive layer is connected with the both positive and negative polarity of described power supply by wire respectively with lower conductiving layer, and p-type crystal silicon solar batteries piece lamination stack is placed in described silicon wafer bearing box；It is provided with heater and breather, described heater is arranged on the constant temperature chamber interior wall of described conveyer belt both sides, and described breather is arranged on around described heater in described calorstat.Can realize carrying out photo attenuation improvement to high-volume cell piece by assembly of the invention and method simultaneously, simple to operate, process time is effectively shortened by the optimization of electrical current and heating-up temperature, increases production capacity, reduce production cost, meet the demand of industrialization production.
Description
Technical field
The present invention relates to a kind of quick mass production device improving p-type crystal silicon solar batteries photo attenuation, belong to solar energy
Field of batteries.
Background technology
Solar energy have reserves " unlimitedness ", the universality existing, utilize spatter property, utilize economy, alive
Take on heavy responsibilities in boundary's energy resource structure conversion, become preferable alternative energy source.P-type crystal silicon solar cell and assembly are the current sun
The main flow of energy battery, its market share is all held in more than 80% recent years.
, in the phenomenon that battery efficiency can be occurred after illumination to decline, attenuation degree is even for p-type crystal silicon solar battery at present
1-9% (relative value) can be reached, be especially apparent in p-type monocrystalline silicon battery, adds additional the work(of solar cell and assembly
Rate is lost, and easily because component power mismatch causes generated energy further loss.
It is generally acknowledged that the reason crystal silicon solar battery produces photo attenuation is mainly boron oxygen being combined, photoproduction current-carrying or electric current are noted
Membership leads to gap oxygen atom and boron atom formation boron oxygen complex in p-type silicon chip, reduces minority carrier life time, thus leading to battery
Decline with component efficiency.The method improving battery photo attenuation at present mainly has two clocks, and one kind is that silicon chip is improved, and reduces silicon chip
Middle boron or the concentration of oxygen, but all can bring the obvious increase of production cost, it is unfavorable for industrialization, another kind is light injection or electricity
Injection is in combination with the method for heating, but the method that light injection combines heating needs to carry out continuous light to cell piece, and each
Light source can only be processed to monolithic battery piece simultaneously, and industrialization difficulty is larger, high cost；Side using electrical pumping plus heating
Method, needs 30～180min, and the time is longer, and every group can only process 5-50 piece cell piece, when cell piece quantity continues to increase,
Two ends are difficult to ensure that with middle temperature homogeneity, have difficulties in scale of mass production.
Content of the invention
Goal of the invention：Present invention aim at being directed to the deficiencies in the prior art, one kind is provided quickly to improve p-type crystal silicon battery
The mass production device of photo attenuation, effectively shortens the Battery disposal time, and lifts single treatment amount, thus lifting production production capacity, fall
Low production cost, meets industrialization demand；
It is yet a further object of the present invention to provide this quick mass production device improving p-type crystal silicon battery photo attenuation a kind of
Using method.
Technical scheme：The quick mass production device improving p-type crystal silicon battery photo attenuation of the present invention, including power supply, perseverance
Incubator, the conveyer belt running through described calorstat and the silicon wafer bearing box being arranged on described conveyer belt；
Described silicon wafer bearing box includes conductive layer and lower conductiving layer, and described upper conductive layer and lower conductiving layer pass through to lead respectively
Line is connected with the both positive and negative polarity of described power supply, and p-type crystal silicon solar batteries piece lamination stack is placed in described silicon wafer bearing box, and follows
Described silicon wafer bearing box synchronizing moving on described conveyer belt, by described calorstat；
It is provided with heater and breather, described heater is arranged on described conveyer belt both sides in described calorstat
Constant temperature chamber interior wall on, described breather is arranged on around described heater, and being passed through nitrogen or compressed air will be described
The even heat that heater produces is transferred on the p-type crystal silicon solar batteries piece in described silicon wafer bearing box.
Further preferably technical scheme is the present invention, and described heater is heater strip, and described breather is ventilation
Pipe, the outlet-inclined impeller vane of described breather upwards, is in 25～75 ° of angles with described conveyer belt plane.
Preferably, the downside of upper conductive layer of described silicon wafer bearing box also sets up 2～15 probes, described probe
Upper end is connected with described upper conductive layer, and lower end is connected with the p-type crystal silicon solar batteries piece surface electrode in described silicon wafer bearing box
Connect.
Preferably, described silicon wafer bearing box also includes insulator foot and insulation column, and described insulator foot is arranged on described
The bottom of silicon wafer bearing box, with described conveyer belt directly contact；Described insulation column is arranged on four sides of described silicon wafer bearing box,
It is placed on the p-type crystal silicon solar batteries piece in described silicon wafer bearing box for positioning fixing lamination stack.
Preferably, in described silicon wafer bearing box, the p-type crystal silicon solar batteries piece quantity of ranked and stacked pile is 55～400.
The using method of the quick mass production device improving p-type crystal silicon battery photo attenuation of the present invention, including as follows
Step：
(1) by p-type crystal silicon solar batteries piece according to all facing up or back side up order lamination stack is placed on silicon
In piece Carrier box, the surface electrode of outermost cell piece is connected with upper conductive layer and lower conductiving layer respectively, forms pile；
(2) both positive and negative polarity of pile forming step (1) is connected with the both positive and negative polarity of power supply, then silicon wafer bearing box is placed in biography
Send on band；
(3) conveyer belt and calorstat are started, silicon wafer bearing box enters in calorstat, and pile is passed through with electric current, electric current density
For 501～5000mA/cm2, cell piece temperature be 230～500 DEG C, conduction time be 1～20 minute；
(4) the p-type crystal silicon solar batteries piece after processing is cooled to room temperature, and carries out testing stepping.
Further, described p-type crystal silicon solar batteries piece be p type single crystal silicon solar battery sheet or p-type polysilicon too
Positive cell piece.
Preferably, when in step (1), p-type crystal silicon solar batteries piece is p type single crystal silicon solar battery sheet, step
(3) in, electric current density is 501～1500mA/cm2, cell piece temperature be 230～300 DEG C, conduction time be 5～20 minutes.
Preferably, when in step (1), p-type crystal silicon solar batteries piece is p-type polysilicon solar battery sheet, step
(3) in, electric current density is 2500～4000mA/cm2, cell piece temperature be 300～400 DEG C, conduction time be 1～10 minute.
Preferably, the described power supply of step (2) is DC source or the pulse power.
Operation principle of the present invention is：When being passed through high current to crystalline silicon solar cell piece, produce a large amount of inside cell piece
Nonequilibrium carrier, simultaneously under uniform temperature effect, the hydrogen atom in battery surface passivating film will discharge, non-equilibrium current-carrying
Son and hydrogen atom can be combined with boron oxygen atom in cell piece under uniform temperature effect, form stable hydrogen boron oxide structure, significantly
Reduce the generation of cell piece boron oxygen pair in the case of being successfully received illumination or electrical pumping, thus improving photo attenuation.
Beneficial effect：(1) pass through assembly of the invention and method can realize high-volume cell piece is carried out simultaneously photic
Decay improves, simple to operate, effectively shortens process time by the optimization of electrical current and heating-up temperature, by former need 30～
The process time of 180 minutes foreshortens to 1～20 minute, increases substantially treatment effeciency, increases production capacity, reduces production cost, full
The demand of sufficient industrialization production；
(2) present invention is cooperated by heater and ventilation unit guarantees that calorstat interior air-flow temperature is consistent, keeps
The uniformity of the cell piece temperature of heap poststack, improves treatment effeciency and product quality；
(3) present invention, when being processed for polysilicon, can also realize defect is carried out hydrogen passivation, improves sun electricity
Pond efficiency.
Brief description
Fig. 1 is the structural representation of the quick mass production device improving p-type crystal silicon battery photo attenuation of the present invention；
Fig. 2 is the structural representation of silicon wafer bearing box of the present invention.
Wherein, 1- silicon wafer bearing box, 2- calorstat, 3- conveyer belt, 4- heater, 5- breather, 6- power supply, 11-
The upper conductive layer of insulator foot, 12-, 13- lower conductiving layer, 14- insulation column, 15- probe.
Specific embodiment
Below by accompanying drawing, technical solution of the present invention is described in detail, but protection scope of the present invention is not limited to
Described embodiment.
A kind of quick mass production device improving p-type crystal silicon battery photo attenuation, as shown in Figure 1, 2, including power supply 6, constant temperature
Case 2, the conveyer belt 3 running through calorstat 2 and the silicon wafer bearing box 1 being arranged on conveyer belt 3.Silicon wafer bearing box 1 accommodates 55～400
Piece cell piece, power supply includes DC source and the pulse power.
Wherein silicon wafer bearing box 1 includes being arranged on the insulator foot 11 of silicon wafer bearing box bottom, dismountable upper conductive layer
12nd, lower conductiving layer 13 and the insulation column 14 being arranged on silicon wafer bearing box 1 four side, upper conductive layer 12 and lower conductiving layer 13 lead to respectively
Cross wire to be connected with power supply 6 the two poles of the earth, 2～15 probes 15, the upper end of probe 15 are also set up on the downside of upper conductive layer 12
It is connected with upper conductive layer 12, lower end is connected with the p-type crystal silicon solar batteries piece surface electrode in silicon wafer bearing box 1, and silicon chip holds
Carry box 1 interval suitable distance to be sequentially placed on conveyer belt 3；
In the calorstat 2 internal both sides near conveyer belt 3, heater 4 and breather 5, wherein heater are installed
4 is heater strip, and breather 5 is breather, and breather 5 is located near heater 4, near conveyer belt 3, breather 5
Outlet-inclined impeller vane upwards, be in 25～75 ° of angles with the plane of conveyer belt 3, the gas being passed through in breather 5 in process of production
P-type crystal silicon solar batteries piece in silicon wafer bearing box 1 can be blowed to, the gas being passed through is nitrogen or compressed air.
In production process, first silicon wafer bearing box 1 is installed, opens conductive layer 12, a number of cell piece is stacked
Conductive layer 12 is covered after putting in silicon wafer bearing box 1, then according to needing to set the speed of conveyer belt 3, will be mounted
Silicon wafer bearing box 1 is placed on conveyer belt 3, starts to lead to according to the electric current density setting after silicon wafer bearing box 1 enters calorstat 2
Electricity, by the heater 4 within calorstat 2 and ventilation unit 5 realize gas flow temperature consistent it is ensured that in silicon wafer bearing box 1 electricity
Pond piece temperature uniformly, stops energising when silicon wafer bearing box 1 leaves calorstat 2, dismantles upper conductive layer 12 by electricity after natural cooling
Pond piece takes out, you can enter subsequent handling.
Embodiment 1：
100 p-type single crystal silicon solar cell pieces are carried out stacking according to the order that all faces up and put into silicon wafer bearing box,
Using DC source energising, electric current density is set to 1000mA/cm2, keep calorstat temperature at 250 DEG C, set line speed
Make silicon wafer bearing box pass through the time in calorstat for 15 minutes, take out after cell piece natural cooling.By the battery after processing
Undressed cell piece carries out contrast test to piece with same batch, and result is as follows：
Embodiment 2：
200 p-type solar cell pieces are carried out stacking according to the order that all faces up and put into silicon wafer bearing box,
Using DC source energising, electric current density is set to 3000mA/cm2, keep calorstat temperature at 375 DEG C, set line speed
Make silicon wafer bearing box pass through the time in calorstat for 8 minutes, take out after cell piece natural cooling.By the cell piece after processing
Undressed cell piece carries out contrast test with same batch, and result is as follows：
Embodiment 3：
55 p-type single crystal silicon solar cell pieces are carried out stacking according to the order that all faces up and put into silicon wafer bearing box,
Using pulse power energising, electric current density is set to 501mA/cm2, keep calorstat temperature at 230 DEG C, setting line speed makes
Silicon wafer bearing box passes through the time for 20 minutes in calorstat, takes out after cell piece natural cooling.By the cell piece after processing
Undressed cell piece carries out contrast test with same batch, and result is as follows：
Embodiment 4：
400 p-type solar cell pieces are carried out stacking according to all back side up order and put into silicon wafer bearing box,
Using DC source energising, electric current density is set to 4000mA/cm2, keep calorstat temperature at 400 DEG C, set line speed
Make silicon wafer bearing box pass through the time in calorstat for 3 minutes, take out after cell piece natural cooling.By the cell piece after processing
Undressed cell piece carries out contrast test with same batch, and result is as follows：
Shown by above test, the crystal silicon solar battery piece after being processed using the inventive method and mass production device is photic to decline
Subtract and be greatly reduced.
Although as described above, having represented with reference to specific preferred embodiment and having described the present invention, it must not be explained
It is the restriction to the present invention itself.Under the premise of the spirit and scope of the present invention defining without departing from claims, can be right
Various changes can be made in the form and details for it.
Claims (10)
1. a kind of quick mass production device improving p-type crystal silicon battery photo attenuation is it is characterised in that include power supply（6）, calorstat
（2）, run through described calorstat（2）Conveyer belt（3）Be arranged on described conveyer belt（3）On silicon wafer bearing box（1）；
Described silicon wafer bearing box（1）Including upper conductive layer（12）And lower conductiving layer（13）, described upper conductive layer（12）With lower conduction
Layer（13）Pass through wire and described power supply respectively（6）Both positive and negative polarity be connected, p-type crystal silicon solar batteries piece lamination stack is placed on described
Silicon wafer bearing box（1）Interior, and follow described silicon wafer bearing box（1）In described conveyer belt（3）Upper synchronizing moving, by described constant temperature
Case（2）；
Described calorstat（2）Inside it is provided with heater（4）And breather（5）, described heater（4）It is arranged on described biography
Send band（3）The calorstat of both sides（2）On inwall, described breather（5）It is arranged on described heater（4）Around, it is passed through
Nitrogen or compressed air are by described heater（4）The even heat producing is transferred to described silicon wafer bearing box（1）Interior p-type is brilliant
On silicon solar cell.
2. the quick mass production device improving p-type crystal silicon battery photo attenuation according to claim 1 is it is characterised in that institute
State heater（4）For heater strip, described breather（5）For breather, described breather（5）Outlet-inclined impeller vane upwards, with
Described conveyer belt（3）Plane is in 25 ~ 75 ° of angles.
3. the quick mass production device improving p-type crystal silicon battery photo attenuation according to claim 1 is it is characterised in that institute
State silicon wafer bearing box（1）Upper conductive layer（12）Downside on also set up 2 ~ 15 probes（15）, described probe（15）Upper
End and described upper conductive layer（12）Connection, lower end and described silicon wafer bearing box（1）Interior p-type crystal silicon solar batteries piece surface electricity
Pole connects.
4. the quick mass production device improving p-type crystal silicon battery photo attenuation according to claim 3 is it is characterised in that institute
State silicon wafer bearing box（1）Also include insulator foot（11）With insulation column（14）, described insulator foot（11）It is arranged on described silicon
Piece Carrier box（1）Bottom, with described conveyer belt（3）Directly contact；Described insulation column（14）It is arranged on described silicon chip to carry
Box（1）Four sides, be placed on described silicon wafer bearing box for positioning fixing lamination stack（1）Interior p-type crystal silicon solar batteries piece.
5. the quick mass production device improving p-type crystal silicon battery photo attenuation according to claim 1 is it is characterised in that institute
State silicon wafer bearing box（1）The p-type crystal silicon solar batteries piece quantity of interior ranked and stacked pile is 55 ~ 400.
6. the using method of the mass production device of quick improvement p-type crystal silicon battery photo attenuation described in a kind of claim 1, it is special
Levy and be, comprise the steps：
（1）By p-type crystal silicon solar batteries piece according to all facing up or back side up order lamination stack is placed on silicon chip to hold
Carry box（1）Interior, the surface electrode of outermost cell piece respectively with upper conductive layer（12）And lower conductiving layer（13）Connect, composition electricity
Heap；
（2）By step（1）The both positive and negative polarity of pile of composition and power supply（6）Both positive and negative polarity be connected, then by silicon wafer bearing box（1）It is placed in
Conveyer belt（3）On；
（3）Adjust conveyer belt（3）Speed and calorstat（2）Temperature, silicon wafer bearing box（1）Enter calorstat（2）Interior, to pile
It is passed through electric current, electric current density is 501 ~ 5000 mA/cm2, cell piece temperature be 230 ~ 500 DEG C, conduction time be 1 ~ 20 minute；
（4）P-type crystal silicon solar batteries piece after processing is cooled to room temperature, and carries out testing stepping.
7. using method according to claim 6 is it is characterised in that described p-type crystal silicon solar batteries piece is p-type monocrystalline
Silicon solar cell or p-type polysilicon solar cell piece.
8. using method according to claim 7 is it is characterised in that step（1）Middle p-type crystal silicon solar batteries piece is P
During type monocrystaline silicon solar cell piece, step（3）Middle electric current density is 501 ~ 1500mA/cm2, cell piece temperature is 230 ~ 300
DEG C, conduction time is 5 ~ 20 minutes.
9. using method according to claim 7 is it is characterised in that step（1）Middle p-type crystal silicon solar batteries piece is P
During type polysilicon solar battery slice, step（3）Middle electric current density is 2500 ~ 4000mA/cm2, cell piece temperature is 300 ~ 400
DEG C, conduction time is 1 ~ 10 minute.
10. the using method according to claim 6 ~ 9 any one is it is characterised in that step（2）Described power supply（6）For
DC source or the pulse power.
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| CN201510605491.7A CN105140347B (en) | 2015-09-21 | 2015-09-21 | Quickly improve mass production device and its using method of p-type crystal silicon battery photo attenuation |
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| KR102154937B1 (en) | 2017-04-19 | 2020-09-11 | 창쩌우 스추앙 에너지 컴퍼니.,리미티드. | Method for eliminating metal composites from polycrystalline silicom cell piece |
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| CN105789382A (en) * | 2016-05-20 | 2016-07-20 | 浙江晶科能源有限公司 | Method for improving light degradation of boron-doped crystalline silicon solar cell |
| CN106910697A (en) * | 2017-04-19 | 2017-06-30 | 常州时创能源科技有限公司 | The detection method of the anti-light ability of declining of crystal silicon solar cell sheet |
| CN107230650B (en) * | 2017-06-01 | 2020-09-11 | 常州时创能源股份有限公司 | Rapid sample preparation equipment for solar cell light attenuation test |
| CN108091730B (en) * | 2017-12-28 | 2020-03-27 | 苏州阿特斯阳光电力科技有限公司 | Attenuation method of photovoltaic device and attenuation test method thereof |
| CN108630772B (en) * | 2018-05-04 | 2019-09-20 | 江西展宇新能源股份有限公司 | A kind of hydrogen passivation technology improving monocrystalline solar cell light decay problem |
| CN109379045A (en) * | 2018-11-27 | 2019-02-22 | 中节能太阳能科技（镇江）有限公司 | A kind of device and method detecting crystal silicon battery photo attenuation |
| CN111785798A (en) * | 2020-07-01 | 2020-10-16 | 晋能清洁能源科技股份公司 | Hydrogen passivation effect improving device and method for improving light attenuation of polycrystal and monocrystal-like light |
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