CN107611005A - The preparation method and its product of a kind of polysilicon membrane and the solar cell comprising the polysilicon membrane - Google Patents
The preparation method and its product of a kind of polysilicon membrane and the solar cell comprising the polysilicon membrane Download PDFInfo
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- CN107611005A CN107611005A CN201710696833.XA CN201710696833A CN107611005A CN 107611005 A CN107611005 A CN 107611005A CN 201710696833 A CN201710696833 A CN 201710696833A CN 107611005 A CN107611005 A CN 107611005A
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
The invention provides a kind of preparation method of polysilicon membrane, it is characterised in that including：(a) deposition of amorphous silicon films；(b) the above-mentioned amorphous silicon membrane of pulse light irradiation is used, makes its crystallization.Solar cell present invention also offers the product of above-mentioned preparation method and comprising the product.Treatment temperature of the present invention is low, processing time is short, can effectively reduce the impurity element diffusion in amorphous silicon membrane, reduce the destruction and influence on adjacent layer material, device is obtained compared with dominance.
Description
【Technical field】
The invention belongs to area of solar cell, and in particular to the preparation method and its product of a kind of polysilicon membrane and
Solar cell comprising the product.
【Background technology】
Polysilicon membrane has a wide range of applications in solar cell field, the tunnelling oxygen especially quickly grown in recent years
Change in passivation back-contact electrode (TOPCon) solar cell.TOPCon batteries use N-type silicon chip, and a thickness is covered on silicon chip back side
The ultra-thin silicon oxide layer in below 2nm is spent, then covers the layer polysilicon film of one layer of doping again.The backside structure of battery is successively
For N-type silicon chip/ultra-thin tunnel oxide/N+ polysilicon layers/metal electrode layer.When battery works, light induced electron serves as a contrast from N-type silicon
Bottom is tunneled through silica into being collected to form photoelectric current by external circuit in doped polysilicon layer.Theoretical modeling and experimental verification table
Bright, a key technology for obtaining efficient TOPCon solar cells is to prepare the polysilicon layer of back side high-dopant concentration, while energy
Ensure the integrality of silicon oxide layer.
The existing method for preparing the polysilicon layer needed for such efficient solar battery, including thermal annealing amorphous crystallization of silicon hair
Method and Directly depositing, mainly based on thermal annealing crystallization of amorphous silicon.
The method that thermal annealing crystallization of amorphous silicon prepares polysilicon layer, usually amorphous silicon membrane is placed under nitrogen protection
850-900 DEG C of processing 30-60min, makes its abundant crystallization.Handled by the process, non-crystalline silicon can crystallize well.
However, the method needs to carry out prolonged high-temperature process to non-crystalline silicon, the diffusion of impurity element, example are easily caused
Such as TOPCon batteries, when preparing back side N+ polysilicon layers with the method, the phosphorus impurities in amorphous silicon membrane will be made
Spread into silicon dioxide layer, the integrality and passivation effect of silica are destroyed, so as to reduce device performance.
【The content of the invention】
It is an object of the invention to provide a kind of preparation method of polysilicon membrane, it is miscellaneous that non-crystalline silicon crystallization process can be reduced
The diffusion of prime element.
Another object of the present invention is to provide the product of above-mentioned preparation method and solar cell comprising the product,
Polysilicon membrane crystallization is abundant, while impurity content is low.
The technical scheme is that：
A kind of preparation method of polysilicon membrane, it is characterised in that including：(a) deposition of amorphous silicon films；(b) arteries and veins is used
Wash the above-mentioned amorphous silicon membrane of irradiation off, make its crystallization.Polysilicon membrane is prepared using the method for pulsed light inducing crystallization of amorphous silicon,
Crystallization efficiency high, treatment temperature is low, processing time is short, can effectively reduce the elements diffusion in amorphous silicon membrane, reduce to adjacent
The destruction and influence of layer material, device is set to obtain compared with dominance.
Further, the pulse width of above-mentioned pulsed light is 100-1000 microseconds, and number of processes is 1-10 times, at pulsed light
Underlayer temperature during reason is 50-550 DEG C.Preferably, the pulsed light comes from xenon lamp.Preferably, the pulse of the pulsed light
Width is 100-500 microseconds.Preferably, the number of processes of the pulsed light is 1-5 times.Preferably, during the pulse light processing
Underlayer temperature be 300-500 DEG C.The spectral region of xenon lamp is wider, and non-crystalline silicon must be selected at suitable pulsed light again than relatively thin
Manage bar part come realize crystallization requirement.Existing conventional crystal pattern is 800-900 degree thermal annealing 30-60 minutes, needs high-temperature technology
And processing time is long, is unfavorable for large area continuous crystallization.Crystallization requirement can be achieved in the present invention below 550 degree of underlayer temperature.
Further, above-mentioned amorphous silicon membrane is intrinsic amorphous silicon film or doped amorphous silicon film.
Further, above-mentioned doped amorphous silicon film is boron doped amorphous silicon film or phosphorus doping amorphous silicon membrane.Doping
Amorphous silicon membrane can more improve the performance of solar cell device by pulsed light Crystallizing treatment, with phosphorus doping non-crystalline silicon
Exemplified by the crystallization of film (n-type), the doping efficiency of phosphorus impurities can be effectively lifted by pulsed light Crystallizing treatment, is improved in material
Fermi level, and then improve solar cell device open-circuit voltage (Voc)；Meanwhile can be with by pulsed light Crystallizing treatment
The electrical conductivity (including free electronic concentration and electron mobility) of material is improved, and then lifts the fill factor, curve factor (FF) of device.
Further, the thickness of above-mentioned amorphous silicon membrane is 5-250nm.If thickness is too small, can not typically be formed complete
P/n knots, and thickness is too big, can cause higher parasitic absorption and extra series resistance, is unfavorable for making efficient sun electricity
Pond, in the art, it is preferable that the thickness of the amorphous silicon membrane is 10-100nm.Preferably, the thickness of the amorphous silicon membrane
Spend for 20-50nm.
Further, in (b) step, before pulse light irradiation, in addition to substrate preheating step, preheating temperature are
100-400 DEG C, preheating time 1-10min.Using preheating step, the pulsed light energy needed for crystallization is not only reduced, can be with
Reduce and be cracked using moment heating+film caused by pulse crystallization, produce stress, introduce the problems such as defect, ensured film
Quality.
Further, in (b) step, shortwave filter plate is provided between pulsed light and amorphous silicon membrane.For compared with
Thin amorphous silicon membrane (below 50nm), the absorption to light is weaker, can be by increasing the intensity of light pulse, or increase pulse
Width, and the number of pulse make its crystallization, but under normal circumstances, the spectrum of xenon lamp is wider, are not inhaled by relatively thin non-crystalline silicon
The long glistening light of waves received can be absorbed by substrate, so that silicon, and when temperature is too high, can cause substrate and amor phous silicon layer phase
Adjacent functional layer performance reduces.By setting shortwave filter plate, make there was only shortwave by the pulsed light that colour filter is irradiated to sample, from
And make it that pulsed light is only absorbed in non-layer silicon layer, is reduced the influence to substrate or successive functional layers, be can solve the problem that above mentioned problem.
Further, column condenser is provided between the shortwave filter plate and amorphous silicon membrane.Add column optically focused
Mirror can form linear light sorurce, sample under linear light sorurce along the scanning direction perpendicular to linear light sorurce, so as to realize
The purpose of amorphous silicon membrane large area crystallization.
A kind of polysilicon membrane, it is characterised in that the polysilicon membrane is as obtained by above-mentioned preparation method.Use this
Method prepare polysilicon membrane, compared with the conventional method for, crystallization rate is higher, especially the crystalline substance to doped amorphous silicon membrane
For change, the activation efficiency of doped chemical is higher (if any higher Voc and FF)
A kind of crystal-silicon solar cell, it is characterised in that the polycrystalline described in claim 10 is included in the solar cell
Silicon thin film, the Voc and FF of solar cell can be made higher, and then realize higher battery efficiency.
The present invention has technique effect beneficial below：
(1) the preparation method treatment temperature is low, processing time is short, and the impurity element that can effectively reduce in amorphous silicon membrane expands
Dissipate, reduce the destruction and influence on adjacent layer material, device is obtained compared with dominance；
(2) preparation method is particularly suitable for carrying out relatively thin amorphous silicon membrane (10-250nm) Crystallizing treatment, crystallization effect
Rate is high, can reach more than 90%；
(3) preparation method carries out local photo-irradiation treatment to silicon chip, effectively reduces energy consumption, improves yield；
(4) preparation method is easily achieved filtering irradiation, reduces heating effect of the long-wave band light to substrate, ensures efficiently too
Positive battery performance；
(5) preparation method using amorphous silicon membrane Preparation equipment and provides arteries and veins by the way of pulsed light revulsive crystallization
Wash the Crystallizing treatment equipment of irradiation off, cost is low, can be achieved large area crystallization, and equipment builds that simple, input is small, is easily integrated,
And handled suitable for continuous crystallization, can be well compatible with existing producing line, it is adapted to the preparation of high efficiency, low cost solar cell；
(6) the polysilicon membrane crystallization efficiency high that is obtained using the preparation method, impurity content are low, and utilize the preparation side
Solar cell prepared by polysilicon membrane that method obtains, can effectively keep the body life time of silicon chip, avoid silicon chip emitter stage and
Minority carrier life time declines in the reduction of back surface passivation efficiency and absorbed layer, is advantageous to keep the performance of finished device；
【Embodiment】
Below in conjunction with specific embodiment, the present invention is described further.
Embodiment provided below is simultaneously not used to the scope that the limitation present invention is covered, described step nor with
To limit its execution sequence.Those skilled in the art do conspicuously improved with reference to existing common knowledge to the present invention, also fall
Enter within the protection domain of application claims.
Embodiment one
On the silica of TOPCon cell backsides, using plasma enhancing vapour deposition grows a layer thickness about successively
For 20nm intrinsic amorphous silicon film, sample is placed on 400 DEG C of warm table after 3min, uses pulse width as 300 μ
S xenon lamp pulse irradiation 1 time, obtains polysilicon membrane.Tested by Raman method (Raman) it can be found that the film crystallization rate
90% is promoted to, it is about 6 × 10 that can obtain wherein phosphorus concentration using Electrochemical Capacitance Voltage method (ECV) test20cm-3。
Embodiment two
On the silica of TOPCon cell backsides, using plasma enhancing vapour deposition grows a layer thickness about successively
For 30nm intrinsic amorphous silicon film, sample is placed on 500 DEG C of warm table after 10min, uses pulse width as 300
μ s xenon lamp irradiates 2 times.During pulse light irradiation, shortwave filter plate is provided between pulsed light and amorphous silicon membrane, is filtered in shortwave
Column condenser is provided between wave plate and amorphous silicon membrane.Tested by Raman method (Raman) it can be found that amorphous silicon membrane is brilliant
Rate is promoted to 95%, can phosphorus concentration be about wherein 7 × 10 using Electrochemical Capacitance Voltage method (ECV) test20cm-3。
Embodiment three
On the silica of TOPCon cell backsides, using plasma enhancing vapour deposition grows a layer thickness about successively
For 15nm boron doped amorphous silicon film, sample is placed on 550 DEG C of warm table after 20min, use pulse width for
350 μ s xenon lamp irradiates 2 times.During pulse light irradiation, shortwave filter plate is provided between pulsed light and amorphous silicon membrane, in shortwave
Column condenser is provided between filter plate and amorphous silicon membrane.Tested by Raman method (Raman) it can be found that amorphous silicon membrane
Crystallization rate is promoted to 95%, can phosphorus concentration be about wherein 5.5 × 10 using Electrochemical Capacitance Voltage method (ECV) test20cm-3。
Example IV
On the silica of TOPCon cell backsides, using plasma enhancing vapour deposition grows a layer thickness about successively
For 50nm phosphorus doping amorphous silicon membrane, sample is placed on 300 DEG C of warm table after 20min, use pulse width for
450 μ s xenon lamp irradiates 2 times.During pulse light irradiation, shortwave filter plate is provided between pulsed light and amorphous silicon membrane, in shortwave
Column condenser is provided between filter plate and amorphous silicon membrane.Tested by Raman method (Raman) it can be found that amorphous silicon membrane
Crystallization rate is promoted to 95%, can phosphorus concentration be about wherein 6 × 10 using Electrochemical Capacitance Voltage method (ECV) test20cm-3。
Embodiment five
On the silica of TOPCon cell backsides, using plasma enhancing vapour deposition grows a layer thickness about successively
For 100nm phosphorus doping amorphous silicon membrane, sample is placed on 550 DEG C of warm table after 5min, use pulse width for
500 μ s xenon lamp irradiates 2 times.During pulse light irradiation, shortwave filter plate is provided between pulsed light and amorphous silicon membrane, in shortwave
Column condenser is provided between filter plate and amorphous silicon membrane.Tested by Raman method (Raman) it can be found that amorphous silicon membrane
Crystallization rate is promoted to 95%, can phosphorus concentration be about wherein 7.8 × 10 using Electrochemical Capacitance Voltage method (ECV) test20cm-3。
Embodiment six
On the silica of TOPCon cell backsides, using plasma enhancing vapour deposition grows a layer thickness about successively
For 250nm phosphorus doping amorphous silicon membrane, sample is placed on 10 DEG C of warm table after 10min, use pulse width for
1000 μ s xenon lamp irradiates 5 times.During pulse light irradiation, shortwave filter plate is provided between pulsed light and amorphous silicon membrane, short
Column condenser is provided between ripple filter plate and amorphous silicon membrane.Tested by Raman method (Raman) it can be found that non-crystalline silicon is thin
Film crystallization rate is promoted to 95%, can phosphorus concentration be about wherein 8.2 × 10 using Electrochemical Capacitance Voltage method (ECV) test20cm-3。
Claims (11)
- A kind of 1. preparation method of polysilicon membrane, it is characterised in that including：(a) deposition of amorphous silicon films；(b) pulse is used The above-mentioned amorphous silicon membrane of light irradiation, makes its crystallization.
- 2. the preparation method of polysilicon membrane according to claim 1, it is characterised in that the pulse width of the pulsed light For 100-1000 microseconds, number of processes is 1-10 time, and underlayer temperature during pulse light processing is 50-550 DEG C.
- 3. the preparation method of polysilicon membrane according to claim 1, it is characterised in that the pulsed light comes from xenon Lamp.
- 4. the preparation method of polysilicon membrane according to claim 1, it is characterised in that the amorphous silicon membrane is intrinsic Amorphous silicon membrane or doped amorphous silicon film.
- 5. the preparation method of polysilicon membrane according to claim 4, it is characterised in that the doped amorphous silicon film is Boron doped amorphous silicon film or phosphorus doping amorphous silicon membrane.
- 6. the preparation method of polysilicon membrane according to claim 1, it is characterised in that the thickness of the amorphous silicon membrane For 5-250nm.
- 7. the preparation method of polysilicon membrane according to claim 1, it is characterised in that in (b) step, in pulse Before light irradiation, in addition to substrate preheating step, preheating temperature are 100-400 DEG C, preheating time 1-10min.
- 8. the preparation method of polysilicon membrane according to claim 1, it is characterised in that in (b) step, in pulse Shortwave filter plate is provided between light and amorphous silicon membrane.
- 9. the preparation method of polysilicon membrane according to claim 1, it is characterised in that in the shortwave filter plate and non- Column condenser is provided between polycrystal silicon film.
- A kind of 10. polysilicon membrane, it is characterised in that system of the polysilicon membrane described in by claim any one of 1-9 Obtained by Preparation Method.
- 11. a kind of solar cell, it is characterised in that the polysilicon that the solar cell is included described in claim 10 is thin Film.
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