CN202423363U - Attenuation-reducing treatment box for base plate of amorphous silicon solar cell - Google Patents
Attenuation-reducing treatment box for base plate of amorphous silicon solar cell Download PDFInfo
- Publication number
- CN202423363U CN202423363U CN2011205657596U CN201120565759U CN202423363U CN 202423363 U CN202423363 U CN 202423363U CN 2011205657596 U CN2011205657596 U CN 2011205657596U CN 201120565759 U CN201120565759 U CN 201120565759U CN 202423363 U CN202423363 U CN 202423363U
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- China
- Prior art keywords
- solar cell
- base plate
- box body
- casing
- silicon solar
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The utility model relates to an attenuation-reducing treatment box for a base plate of an amorphous silicon solar cell. The attenuation-reducing treatment box is provided with a seal box body, more than one gap is formed on the top wall of the box body, a light source close to sunlight in spectrum is arranged on the inner wall of the sidewall of the box body, and a plurality of through holes are formed in the sidewall of the box body. The base plate of the amorphous silicon solar cell is inserted into the gap of the box body, the box body and the base plate are then jointly placed in a cavity for carrying out PECVD (Plasma Enhanced Chemical Vapor Deposition) on the base plate of the amorphous solar cell, that is to say, the light source, close to the sunlight in spectrum, on the inner side of the sidewall of the box body can be used for irradiating a conductive film on the base plate when the PECVD is carried out on the base plate of the amorphous solar cell.
Description
Technical field
The utility model relates to the device that the non-crystal silicon solar cell substrate is handled, and specifically the substrate of solar cell is fallen a kind of treatment box of attenuation processing.
Background technology
Say that from material structure amorphous silicon has identical ligancy with the homogeneity crystal; But bond distance and bond angle slightly change; Describing the continuous random network model of amorphous silicon structures thinks; Amorphous silicon is exactly to be formed by connecting immediately more such unit that are twisted slightly, does not have fixing position shape relation between unit and the unit, and its orderly scope is in 1 ~ 2 atoms range.Owing to unordered reason; In amorphous silicon, exist certain dangling bonds, the such fault of construction of stress and microvoid hole; And in energy gap, having produced magnetic tape trailer, magnetic tape trailer and fault of construction have influenced transporting of charge carrier as the complex centre, make amorphous silicon battery efficient reduce.The amorphous silicon thin-film solar cell that making just finishes is under long-time light conditions; Can produce the photoproduction metastable state; This photoproduction metastable state can cause silicon-silicon weak bond fracture back two dangling bonds to occur; Cause amorphous silicon battery efficient to reduce, thereby so-called " the early stage decline of non-crystal silicon solar cell " occur.
The utility model content
The purpose of the utility model is to provide a non-crystal silicon solar cell substrate to fall the attenuation processing case, by this treatment box the non-crystal silicon solar cell substrate is handled, and can effectively prevent the early stage decline of non-crystal silicon solar cell.
For realizing above-mentioned purpose; The utility model adopts following scheme: the attenuation processing case falls in the non-crystal silicon solar cell substrate; It has the casing of a sealing; In the slit that has on the roof of casing more than, the inside sidewalls of casing is provided with the light source near sunlight spectrum, has some through holes on the sidewall of casing.
When adopting the treatment box that the utility model provides; The non-crystal silicon solar cell substrate is inserted in the slit on the casing; Then casing is carried out in the employed cavity of PECVD (plasma enhanced chemical vapor deposition method) vapour deposition together with the substrate that substrate is placed on solar cell jointly; When can carry out the PECVD vapour deposition, the conducting film on the substrate is shone by the light source near sunlight spectrum on the wall box inboard at substrate to solar cell.After the process of PECVD vapour deposition is accomplished, finish irradiation.It is thus clear that owing to substrate is being carried out use the light source irradiation near sunlight spectrum in the PECVD vapor deposition processes always, light source irradiation is behind face; Produce the photoproduction metastable state, silicon-silicon weak bond phenomenon of rupture occurs, because vapour deposition is being carried out; So new atom forms once more, crack conditions is connected again, so; Can, the substrate decay accomplish vapour deposition again after accomplishing.Like this, substrate when accepting solar radiation again, is not had decay again basically after being used to process solar cell.
The utility model is simple and reasonable for structure, and after it can be handled the amorphous silicon thin-film solar cell substrate, the decay in the time of can it being used reduced, and equals whole solar cell power is improved.
Description of drawings
Fig. 1 is the structure chart of the utility model one embodiment;
Fig. 2 is the A-A cutaway view of Fig. 1.
Embodiment
Further specify the present invention below in conjunction with embodiment and accompanying drawing.
Referring to Fig. 1, Fig. 2.
The treatment box that the utility model provides has the casing 1 of a sealing, and at the slit 1a that has on the roof of casing 1 more than, the inside sidewalls of casing 1 is provided with the light source 2 near sunlight spectrum, has some through hole 1b on the sidewall of casing 1.Casing 1 is a cuboid, on the inboard of the four sides of casing 1 sidewall, is equipped with light source 2, and light source 2 is an xenon lamp.Be covered with lampshade 3 in the light source outside.
Visible by Fig. 1, when using this treatment box, the substrate 4 of solar cell is inserted among the slit 1a on the casing 1.
Claims (2)
1. the attenuation processing case falls in the non-crystal silicon solar cell substrate; It is characterized in that: it has the casing of a sealing; In the slit that has on the roof of casing more than, the inside sidewalls of casing is provided with the light source near sunlight spectrum, has some through holes on the sidewall of casing.
2. the attenuation processing case falls in non-crystal silicon solar cell substrate according to claim 1, it is characterized in that: casing is a cuboid, on the inboard of the four sides of casing sidewall, is equipped with light source, and light source is an xenon lamp.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011205657596U CN202423363U (en) | 2011-12-29 | 2011-12-29 | Attenuation-reducing treatment box for base plate of amorphous silicon solar cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011205657596U CN202423363U (en) | 2011-12-29 | 2011-12-29 | Attenuation-reducing treatment box for base plate of amorphous silicon solar cell |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202423363U true CN202423363U (en) | 2012-09-05 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011205657596U Expired - Fee Related CN202423363U (en) | 2011-12-29 | 2011-12-29 | Attenuation-reducing treatment box for base plate of amorphous silicon solar cell |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN202423363U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102496663A (en) * | 2011-12-29 | 2012-06-13 | 普乐新能源（蚌埠）有限公司 | Method for reducing attenuation rate of amorphous silicon solar cell |
| CN104505424A (en) * | 2014-08-18 | 2015-04-08 | 横店集团东磁股份有限公司 | Device reducing light degradation of solar cell and method thereof |
-
2011
- 2011-12-29 CN CN2011205657596U patent/CN202423363U/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102496663A (en) * | 2011-12-29 | 2012-06-13 | 普乐新能源（蚌埠）有限公司 | Method for reducing attenuation rate of amorphous silicon solar cell |
| CN104505424A (en) * | 2014-08-18 | 2015-04-08 | 横店集团东磁股份有限公司 | Device reducing light degradation of solar cell and method thereof |
| CN104505424B (en) * | 2014-08-18 | 2016-10-05 | 横店集团东磁股份有限公司 | A kind of devices and methods therefor reducing solaode photo attenuation |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20120905 Termination date: 20121229 |