WO2018192229A1 - Testing method for resistance of crystalline silicon solar cell to light-induced degradation - Google Patents

Testing method for resistance of crystalline silicon solar cell to light-induced degradation Download PDF

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WO2018192229A1
WO2018192229A1 PCT/CN2017/113852 CN2017113852W WO2018192229A1 WO 2018192229 A1 WO2018192229 A1 WO 2018192229A1 CN 2017113852 W CN2017113852 W CN 2017113852W WO 2018192229 A1 WO2018192229 A1 WO 2018192229A1
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solar cell
silicon solar
crystalline silicon
light decay
resistance
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PCT/CN2017/113852
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Chinese (zh)
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任常瑞
符黎明
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常州时创能源科技有限公司
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Publication of WO2018192229A1 publication Critical patent/WO2018192229A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the invention relates to a method for detecting the anti-light decay capability of a crystalline silicon solar cell.
  • the conversion efficiency of polycrystalline silicon solar cells is getting higher and higher, and the photo-induced attenuation (referred to as light decay) has an increasing influence on solar cells.
  • the terminal market has strict light decay rate for polycrystalline silicon solar cells. Requirements, therefore, in the production process of polycrystalline silicon solar cells, real-time testing of the anti-light decay capability of the finished crystalline silicon solar cells is required to achieve the purpose of monitoring the production process.
  • the conventional light decay test method is illumination, the test time is longer (generally greater than 6h), and the energy consumption is large (generally greater than 100W/piece), which is not conducive to the monitoring of the production process of the solar cell.
  • the object of the present invention is to provide a method for detecting the light decay resistance of a crystalline silicon solar cell sheet, which can reduce the test time and reduce the test energy consumption compared with the existing method of light test light decay rate.
  • the technical solution of the present invention is to design a method for detecting the anti-light decay capability of a crystalline silicon solar cell, comprising the following steps:
  • the crystalline silicon solar cell sheet is judged as a good product with good resistance to light decay; If the decay rate is greater than the light decay rate of the good product, the crystalline silicon solar cell sheet is judged to be a defective product that is unsatisfactory in resistance to light decay.
  • the electrical injection is performed by applying a positive bias voltage to the crystalline silicon solar cell.
  • electrical injection is carried out at a temperature of 250 to 350 °C.
  • the injection current is controlled at 600 to 800 mA/cm 2 .
  • the time of the electrical injection is controlled to be 0.5 to 1 min.
  • electrical injection is performed at a temperature of 300 to 350 °C.
  • the time of the electrical injection is controlled at 0.5 min.
  • the good light decay rate is 1% to 2%.
  • the crystalline silicon solar cell sheet is a polycrystalline silicon cell or a monocrystalline silicon cell.
  • the invention has the advantages and advantages of providing a method for detecting the anti-light fading ability of a crystalline silicon solar cell sheet, and the invention can reduce the test time and reduce the test energy consumption compared with the existing method of illuminating the light decay rate.
  • the invention injects current into the crystalline silicon solar cell by electric injection under a certain temperature condition, thereby achieving the purpose of rapidly simulating the light attenuation, so that the crystal silicon solar cell can be quickly tested for light decay, and the test time can be reduced.
  • the production process can be better monitored, and the energy consumption of the electric injection equipment is low.
  • the energy consumption of the single-chip test is only one percent of the illumination test equipment.
  • a method for detecting the resistance to light decay of a crystalline silicon solar cell comprises the following steps:
  • the crystalline silicon solar cell sheet is a polycrystalline silicon battery sheet or a monocrystalline silicon battery sheet;
  • the light attenuation rate of the good product is set to be 1% to 2%;
  • the method of electrical injection is: applying a positive bias voltage to the polycrystalline silicon cell;
  • the injection current is controlled at 600-800 mA/cm 2 ;
  • the time of the electrical injection is controlled to be 0.5 to 1 min.
  • electrical injection is performed at a temperature of 300 to 350 ° C, the injection current is controlled at 800 mA/cm 2 , and the time of electrical injection is controlled at 0.5 min.
  • the invention can quickly perform the light decay test on the crystalline silicon solar cell sheet under the low energy consumption, thereby achieving the purpose of real-time monitoring of the production process.

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Testing Of Individual Semiconductor Devices (AREA)
  • Photovoltaic Devices (AREA)

Abstract

Disclosed in the present invention is a testing method for resistance of a crystalline silicon solar cell to light-induced degradation. The method comprises the following steps: 1) conducting a first conversion efficiency measurement on a crystalline silicon solar cell; 2) injecting, in a specific temperature condition and by means of electric injection, an electric current into the crystalline silicon solar cell; 3) conducting a second conversion efficiency measurement on the crystalline silicon solar cell after the electric injection; 4) calculating an actual light-induced degradation rate of the crystalline silicon solar cell; and 5) comparing the actual light-induced degradation rate against a predetermined acceptable light-induced degradation rate, and if the actual light-induced degradation rate is not greater than the acceptable light-induced degradation rate, then determining that the crystalline silicon solar cell is an acceptable product having acceptable resistance to light-induced degradation, or else determining that the crystalline silicon solar cell is an unacceptable product not having acceptable resistance to light-induced degradation. The present invention enables quick testing of light-induced degradation with low power consumption, thus providing real-time monitoring on a manufacturing process.

Description

晶体硅太阳能电池片抗光衰能力的检测方法Method for detecting light decay resistance of crystalline silicon solar cells 技术领域Technical field
本发明涉及晶体硅太阳能电池片抗光衰能力的检测方法。The invention relates to a method for detecting the anti-light decay capability of a crystalline silicon solar cell.
背景技术Background technique
随着光伏技术的发展，多晶硅太阳能电池的转换效率越来越高，光致衰减(简称光衰)对太阳电池的影响也越来越大，终端市场对多晶硅太阳能电池的光衰率有严格的要求，因此，在多晶硅太阳能电池的生产过程中，需要对成品晶体硅太阳能电池片的抗光衰能力进行实时测试，以达到监控生产工艺的目的。目前常规的光衰测试方法为光照，测试时间较长(一般大于6h)，能耗较大(一般大于100W/片)，不利于太阳电池的生产过程监控。With the development of photovoltaic technology, the conversion efficiency of polycrystalline silicon solar cells is getting higher and higher, and the photo-induced attenuation (referred to as light decay) has an increasing influence on solar cells. The terminal market has strict light decay rate for polycrystalline silicon solar cells. Requirements, therefore, in the production process of polycrystalline silicon solar cells, real-time testing of the anti-light decay capability of the finished crystalline silicon solar cells is required to achieve the purpose of monitoring the production process. At present, the conventional light decay test method is illumination, the test time is longer (generally greater than 6h), and the energy consumption is large (generally greater than 100W/piece), which is not conducive to the monitoring of the production process of the solar cell.
发明内容Summary of the invention
本发明的目的在于提供一种晶体硅太阳能电池片抗光衰能力的检测方法，与现有光照测试光衰率的方式相比，本发明可减少测试时间，降低测试能耗。The object of the present invention is to provide a method for detecting the light decay resistance of a crystalline silicon solar cell sheet, which can reduce the test time and reduce the test energy consumption compared with the existing method of light test light decay rate.
为实现上述目的，本发明的技术方案是设计一种晶体硅太阳能电池片抗光衰能力的检测方法，包括如下步骤：In order to achieve the above object, the technical solution of the present invention is to design a method for detecting the anti-light decay capability of a crystalline silicon solar cell, comprising the following steps:
1)对晶体硅太阳能电池片进行转换效率的一次测量，得到一次效率值η1；1) performing a measurement of the conversion efficiency of the crystalline silicon solar cell sheet, and obtaining an efficiency value η 1 ;
2)在一定温度条件下，通过电注入的方式，向晶体硅太阳能电池片注入电流；2) injecting current into the crystalline silicon solar cell sheet by means of electrical injection under a certain temperature condition;
3)对电注入后的晶体硅太阳能电池片进行转换效率的二次测量，得到二次效率值η2；3) performing a secondary measurement of the conversion efficiency of the crystalline silicon solar cell after the electric injection to obtain a secondary efficiency value η 2 ;
4)计算出晶体硅太阳能电池片的实际光衰率；4) Calculate the actual light decay rate of the crystalline silicon solar cell;
实际光衰率＝(η1－η2)/η1×100％；Actual light decay rate = (η 1 - η 2 ) / η 1 × 100%;
5)将上述实际光衰率与预设的良品光衰率比较，若实际光衰率不大于良品光衰率，则将晶体硅太阳能电池片判为抗光衰能力合格的良品；若实际光衰率大于良品光衰率，则将晶体硅太阳能电池片判为抗光衰能力不合格的不良品。5) Comparing the above actual light decay rate with the preset good light decay rate, if the actual light decay rate is not greater than the good light decay rate, the crystalline silicon solar cell sheet is judged as a good product with good resistance to light decay; If the decay rate is greater than the light decay rate of the good product, the crystalline silicon solar cell sheet is judged to be a defective product that is unsatisfactory in resistance to light decay.
优选的，所述电注入的方式为：对晶体硅太阳能电池片施加正偏电压。Preferably, the electrical injection is performed by applying a positive bias voltage to the crystalline silicon solar cell.
优选的，在250～350℃的温度条件下，进行电注入。Preferably, electrical injection is carried out at a temperature of 250 to 350 °C.
优选的，所述电注入过程中，注入电流控制在600～800mA/cm2。 Preferably, during the electrical injection, the injection current is controlled at 600 to 800 mA/cm 2 .
优选的，所述电注入的时间控制在0.5～1min。Preferably, the time of the electrical injection is controlled to be 0.5 to 1 min.
优选的，在300～350℃的温度条件下，进行电注入。Preferably, electrical injection is performed at a temperature of 300 to 350 °C.
优选的，所述电注入的时间控制在0.5min。Preferably, the time of the electrical injection is controlled at 0.5 min.
优选的，所述良品光衰率为1％～2％。Preferably, the good light decay rate is 1% to 2%.
优选的，所述晶体硅太阳能电池片为多晶硅电池片或单晶硅电池片。Preferably, the crystalline silicon solar cell sheet is a polycrystalline silicon cell or a monocrystalline silicon cell.
本发明的优点和有益效果在于：提供一种晶体硅太阳能电池片抗光衰能力的检测方法，与现有光照测试光衰率的方式相比，本发明可减少测试时间，降低测试能耗。The invention has the advantages and advantages of providing a method for detecting the anti-light fading ability of a crystalline silicon solar cell sheet, and the invention can reduce the test time and reduce the test energy consumption compared with the existing method of illuminating the light decay rate.
本发明在一定温度条件下，通过电注入的方式，向晶体硅太阳能电池片注入电流，达到快速模拟光照衰减的目的，从而能快速地对晶体硅太阳能电池片进行光衰测试，测试时间能降低至1min以内，能更好的对生产过程进行监控，而且电注入设备能耗低，单片测试能耗仅为光照测试设备百分之一。The invention injects current into the crystalline silicon solar cell by electric injection under a certain temperature condition, thereby achieving the purpose of rapidly simulating the light attenuation, so that the crystal silicon solar cell can be quickly tested for light decay, and the test time can be reduced. Within 1min, the production process can be better monitored, and the energy consumption of the electric injection equipment is low. The energy consumption of the single-chip test is only one percent of the illumination test equipment.
具体实施方式detailed description
下面结合实施例，对本发明的具体实施方式作进一步描述。以下实施例仅用于更加清楚地说明本发明的技术方案，而不能以此来限制本发明的保护范围。The specific embodiments of the present invention are further described below in conjunction with the embodiments. The following examples are only intended to more clearly illustrate the technical solutions of the present invention, and are not intended to limit the scope of the present invention.
本发明具体实施的技术方案是：The technical solution specifically implemented by the present invention is:
一种晶体硅太阳能电池片抗光衰能力的检测方法，包括如下步骤：A method for detecting the resistance to light decay of a crystalline silicon solar cell comprises the following steps:
1)对晶体硅太阳能电池片进行转换效率的一次测量，得到一次效率值η1；1) performing a measurement of the conversion efficiency of the crystalline silicon solar cell sheet, and obtaining an efficiency value η 1 ;
2)在一定温度条件下，通过电注入的方式，向晶体硅太阳能电池片注入电流；2) injecting current into the crystalline silicon solar cell sheet by means of electrical injection under a certain temperature condition;
3)对电注入后的晶体硅太阳能电池片进行转换效率的二次测量，得到二次效率值η2；3) performing a secondary measurement of the conversion efficiency of the crystalline silicon solar cell after the electric injection to obtain a secondary efficiency value η 2 ;
4)计算出晶体硅太阳能电池片的实际光衰率；4) Calculate the actual light decay rate of the crystalline silicon solar cell;
实际光衰率＝(η1－η2)/η1×100％；Actual light decay rate = (η 1 - η 2 ) / η 1 × 100%;
5)将上述实际光衰率与预设的良品光衰率比较，若实际光衰率不大于良品光衰率，则将晶体硅太阳能电池片判为抗光衰能力合格的良品；若实际光衰率大于良品光衰率，则将晶体硅太阳能电池片判为抗光衰能力不合格的不良品；5) Comparing the above actual light decay rate with the preset good light decay rate, if the actual light decay rate is not greater than the good light decay rate, the crystalline silicon solar cell sheet is judged as a good product with good resistance to light decay; If the decay rate is greater than the light decay rate of the good product, the crystalline silicon solar cell sheet is judged as a defective product that is unqualified for light decay resistance;
所述晶体硅太阳能电池片为多晶硅电池片或单晶硅电池片；The crystalline silicon solar cell sheet is a polycrystalline silicon battery sheet or a monocrystalline silicon battery sheet;
所述良品光衰率设定为1％～2％； The light attenuation rate of the good product is set to be 1% to 2%;
具体的工艺条件如下：The specific process conditions are as follows:
在250～350℃的温度条件下，进行电注入；Electrical injection at a temperature of 250 to 350 ° C;
所述电注入的方式为：对多晶硅电池片施加正偏电压；The method of electrical injection is: applying a positive bias voltage to the polycrystalline silicon cell;
所述电注入过程中，注入电流控制在600～800mA/cm2；In the electric injection process, the injection current is controlled at 600-800 mA/cm 2 ;
所述电注入的时间控制在0.5～1min。The time of the electrical injection is controlled to be 0.5 to 1 min.
优选的，在300～350℃的温度条件下进行电注入，注入电流控制在800mA/cm2，电注入的时间控制在0.5min。Preferably, electrical injection is performed at a temperature of 300 to 350 ° C, the injection current is controlled at 800 mA/cm 2 , and the time of electrical injection is controlled at 0.5 min.
本发明可在较低的能耗下，快速的对晶体硅太阳能电池片进行光衰测试，从而达到实时监控生产工艺的目的。The invention can quickly perform the light decay test on the crystalline silicon solar cell sheet under the low energy consumption, thereby achieving the purpose of real-time monitoring of the production process.
以上所述仅是本发明的优选实施方式，应当指出，对于本技术领域的普通技术人员来说，在不脱离本发明技术原理的前提下，还可以做出若干改进和润饰，这些改进和润饰也应视为本发明的保护范围。 The above description is only a preferred embodiment of the present invention, and it should be noted that those skilled in the art can make several improvements and retouchings without departing from the technical principles of the present invention. It should also be considered as the scope of protection of the present invention.

Claims (9)

  1. 晶体硅太阳能电池片抗光衰能力的检测方法，其特征在于，包括如下步骤：The method for detecting the anti-light decay capability of a crystalline silicon solar cell is characterized in that it comprises the following steps:
    1)对晶体硅太阳能电池片进行转换效率的一次测量，得到一次效率值η1；1) performing a measurement of the conversion efficiency of the crystalline silicon solar cell sheet, and obtaining an efficiency value η 1 ;
    2)在一定温度条件下，通过电注入的方式，向晶体硅太阳能电池片注入电流；2) injecting current into the crystalline silicon solar cell sheet by means of electrical injection under a certain temperature condition;
    3)对电注入后的晶体硅太阳能电池片进行转换效率的二次测量，得到二次效率值η2；3) performing a secondary measurement of the conversion efficiency of the crystalline silicon solar cell after the electric injection to obtain a secondary efficiency value η 2 ;
    4)计算出晶体硅太阳能电池片的实际光衰率；4) Calculate the actual light decay rate of the crystalline silicon solar cell;
    实际光衰率＝(η1－η2)/η1×100％；Actual light decay rate = (η 1 - η 2 ) / η 1 × 100%;
    5)将上述实际光衰率与预设的良品光衰率比较，若实际光衰率不大于良品光衰率，则将晶体硅太阳能电池片判为抗光衰能力合格的良品；若实际光衰率大于良品光衰率，则将晶体硅太阳能电池片判为抗光衰能力不合格的不良品。5) Comparing the above actual light decay rate with the preset good light decay rate, if the actual light decay rate is not greater than the good light decay rate, the crystalline silicon solar cell sheet is judged as a good product with good resistance to light decay; If the decay rate is greater than the light decay rate of the good product, the crystalline silicon solar cell sheet is judged to be a defective product that is unsatisfactory in resistance to light decay.
  2. 根据权利要求1所述的晶体硅太阳能电池片抗光衰能力的检测方法，其特征在于，所述电注入的方式为：对晶体硅太阳能电池片施加正偏电压。The method for detecting resistance to light decay of a crystalline silicon solar cell according to claim 1, wherein the electrical injection is performed by applying a positive bias voltage to the crystalline silicon solar cell.
  3. 根据权利要求2所述的晶体硅太阳能电池片抗光衰能力的检测方法，其特征在于，在250～350℃的温度条件下，进行电注入。The method for detecting the light decay resistance of a crystalline silicon solar cell sheet according to claim 2, wherein the electric injection is performed at a temperature of 250 to 350 °C.
  4. 根据权利要求3所述的晶体硅太阳能电池片抗光衰能力的检测方法，其特征在于，所述电注入过程中，注入电流控制在600～800mA/cm2。The method for detecting the light decay resistance of a crystalline silicon solar cell according to claim 3, wherein during the electrical injection, the injection current is controlled at 600 to 800 mA/cm 2 .
  5. 根据权利要求4所述的晶体硅太阳能电池片抗光衰能力的检测方法，其特征在于，所述电注入的时间控制在0.5～1min。The method for detecting the light decay resistance of a crystalline silicon solar cell according to claim 4, wherein the time of the electrical injection is controlled to be 0.5 to 1 min.
  6. 根据权利要求5所述的晶体硅太阳能电池片抗光衰能力的检测方法，其特征在于，在300～350℃的温度条件下，进行电注入。The method for detecting the light decay resistance of a crystalline silicon solar cell sheet according to claim 5, wherein the electrical injection is performed at a temperature of 300 to 350 °C.
  7. 根据权利要求6所述的晶体硅太阳能电池片抗光衰能力的检测方法，其特征在于，所述电注入的时间控制在0.5min。The method for detecting the light decay resistance of a crystalline silicon solar cell according to claim 6, wherein the time of the electrical injection is controlled at 0.5 min.
  8. 根据权利要求7所述的晶体硅太阳能电池片抗光衰能力的检测方法，其特征在于，所述良品光衰率为1％～2％。The method for detecting the light decay resistance of a crystalline silicon solar cell sheet according to claim 7, wherein the good light decay rate is 1% to 2%.
  9. 根据权利要求8所述的晶体硅太阳能电池片抗光衰能力的检测方法，其特征在于，所述晶体硅太阳能电池片为多晶硅电池片或单晶硅电池片。 The method for detecting the light decay resistance of a crystalline silicon solar cell according to claim 8, wherein the crystalline silicon solar cell sheet is a polycrystalline silicon cell or a monocrystalline silicon cell.
PCT/CN2017/113852 2017-04-19 2017-11-30 Testing method for resistance of crystalline silicon solar cell to light-induced degradation WO2018192229A1 (en)

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