CN108198907B - Silicon wafer determination method and device - Google Patents
Silicon wafer determination method and device Download PDFInfo
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- CN108198907B CN108198907B CN201711485367.7A CN201711485367A CN108198907B CN 108198907 B CN108198907 B CN 108198907B CN 201711485367 A CN201711485367 A CN 201711485367A CN 108198907 B CN108198907 B CN 108198907B
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 284
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 272
- 239000010703 silicon Substances 0.000 title claims abstract description 272
- 238000000034 method Methods 0.000 title claims abstract description 48
- 235000012431 wafers Nutrition 0.000 abstract description 145
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 13
- 238000006243 chemical reaction Methods 0.000 description 11
- 238000010586 diagram Methods 0.000 description 6
- 238000001514 detection method Methods 0.000 description 5
- 229910021419 crystalline silicon Inorganic materials 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000002161 passivation Methods 0.000 description 4
- 238000002360 preparation method Methods 0.000 description 4
- 229910004205 SiNX Inorganic materials 0.000 description 3
- XGCTUKUCGUNZDN-UHFFFAOYSA-N [B].O=O Chemical compound [B].O=O XGCTUKUCGUNZDN-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- 239000002210 silicon-based material Substances 0.000 description 3
- 239000013078 crystal Substances 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 238000010248 power generation Methods 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 239000000523 sample Substances 0.000 description 2
- 238000005204 segregation Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- LBZRRXXISSKCHV-UHFFFAOYSA-N [B].[O] Chemical class [B].[O] LBZRRXXISSKCHV-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 230000008707 rearrangement Effects 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
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- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Condensed Matter Physics & Semiconductors (AREA)
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- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
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Abstract
The invention discloses a method and a device for determining a silicon wafer, wherein the method obtains the corresponding relation between resistivity and a light attenuation value according to the corresponding relation between each position code of each silicon wafer and the light attenuation value of a battery piece prepared by the silicon wafer and the corresponding relation between each position code and the resistivity of the silicon wafer, and determines that the battery piece prepared by the silicon wafer is the battery piece with lower light attenuation according to the corresponding relation between the resistivity and the light attenuation value. Therefore, the difference between the silicon wafers can be reduced, the light attenuation fluctuation of the battery pieces is reduced, the process window is enlarged, the productivity and yield of the battery pieces are improved, and the cost of the battery pieces is reduced.
Description
Technical Field
The embodiment of the invention relates to the technical field of data processing, in particular to a method and a device for determining a silicon wafer.
Background
The solar cell generates electric energy by utilizing the photoelectric effect of a semiconductor PN junction, and is sustainable clean energy. The solar cell can be divided into a silicon-based solar cell, a III-V solar cell and the like, wherein the crystalline silicon solar cell is one of the most widely applied solar cells in current industrialization, and can be applied to the fields of grid-connected power generation, off-grid power generation, commercial application and the like.
Currently, polycrystalline silicon solar cells in crystalline silicon solar cells are rapidly developed due to the advantages of large yield per unit, low cost, low purity requirement and the like, and have equal market share occupation compared with monocrystalline silicon solar cells. However, the conversion efficiency is low due to the presence of a large number of grain boundaries, high dislocation density and impurity concentration inside. In order to improve the efficiency of the polycrystalline silicon solar cell and match the preparation cost of the polycrystalline silicon solar cell, a local contact back Passivation (PERC) technology is mostly adopted as a preparation method of the crystalline silicon solar cell. The preparation method adopts SiO
2/SiNx or Al
2O
3The method comprises the following steps of sequentially performing back grooving, screen printing and sintering on a/SiNx laminated film serving as a back passivation dielectric layer to form back local contact, and preparing a polycrystalline silicon solar cell with a passivated emitter and back surface cell (PERC) structure.
However, in P-type crystalline silicon, the minority carrier lifetime is reduced due to a boron-oxygen complex formed by boron and oxygen in the silicon wafer caused by illumination or current injection, and the output power of the silicon wafer is degraded, so that the light attenuation (LID) is generated. In addition to boron-oxygen recombination, there are other reasons that remain unclear, but it is generally believed to be related to bulk recombination, i.e., silicon materials have a very large effect on light attenuation. The existing light attenuation inhibition is mainly realized by introducing annealing equipment, the scheme can well inhibit the light attenuation, but the stability of the light attenuation is poor due to the difference of the quality of different silicon wafers.
Disclosure of Invention
In view of this, the present invention provides a method and an apparatus for determining a silicon wafer, which can determine a silicon wafer with low light attenuation characteristics according to test results of the silicon wafer and a corresponding cell, so as to obtain a stable light attenuation difference of the cell and reduce light attenuation fluctuation of a solar cell.
In a first aspect, an embodiment of the present invention provides a method for determining a silicon wafer, including:
acquiring the corresponding relation between each position code of each silicon chip and the light attenuation value of a battery piece prepared by each silicon chip and the resistivity of each silicon chip;
acquiring the corresponding relation between the resistivity and the light attenuation value according to the corresponding relation between each position code and the light attenuation value and the corresponding relation between each position code and the resistivity;
and determining the cell prepared by the silicon wafer as a low light attenuation cell according to the corresponding relation between the resistivity and the light attenuation value.
Optionally, the obtaining of the light attenuation value corresponding to the position code of each silicon chip and the battery piece prepared from each silicon chip and the corresponding relationship between each position code and the resistivity of each silicon chip includes:
acquiring light attenuation values of the battery pieces and corresponding relations between the position codes and the light attenuation values according to light attenuation test results of the battery pieces prepared by the silicon chips sampled by the different position codes;
and acquiring the corresponding relation between each position code and the resistivity according to the test result of the silicon slice resistivity of different position codes.
Optionally, the position code includes a first position code of the silicon wafer on the silicon rod and a second position code of the silicon rod on the silicon ingot.
Optionally, obtaining the light attenuation value of the battery piece and the corresponding relationship between each position code and the light attenuation value according to the light attenuation test result of the battery piece prepared from the silicon chip sampled by the different position codes includes:
acquiring the position code of each silicon chip according to the first position code and the second position code;
obtaining the light attenuation test result of each battery piece prepared by each silicon chip of each position code;
and acquiring the corresponding relation between the position code of the silicon chip and the light attenuation value according to the light attenuation test result.
Optionally, determining that the battery piece prepared by the silicon wafer is a low light attenuation battery light attenuation piece according to the corresponding relationship between the resistivity and the light attenuation value includes:
according to the corresponding relation between the resistivity and the light attenuation value, acquiring the resistivity threshold range of the silicon wafer when the light attenuation value is smaller than a light attenuation preset threshold;
and when the resistivity of the silicon wafer is within the resistivity threshold range, determining that the battery piece prepared by the silicon wafer is a low light attenuation battery piece.
In a second aspect, an embodiment of the present invention provides an apparatus for determining a silicon wafer, including:
the corresponding relation acquisition module is used for acquiring the corresponding relation between each position code of each silicon chip and the light attenuation value of each battery piece prepared by each silicon chip and the resistivity of each silicon chip;
the corresponding relation determining module is used for acquiring the corresponding relation between the resistivity and the light attenuation value according to the corresponding relation between each position code and the light attenuation value and the corresponding relation between each position code and the resistivity;
and the low light attenuation piece determining module is used for determining the battery piece prepared by the silicon chip as the low light attenuation battery piece according to the corresponding relation between the resistivity and the light attenuation value.
Optionally, the corresponding relationship obtaining module includes:
the light attenuation corresponding relation obtaining unit is used for obtaining light attenuation values of the battery pieces and corresponding relations between the position codes and the light attenuation values according to light attenuation test results of the battery pieces prepared by the silicon chips sampled by the different position codes;
and the resistivity corresponding relation obtaining unit is used for obtaining the corresponding relation between each position code and the resistivity according to the test result of the silicon slice resistivity of different position codes.
Optionally, the position code includes a first position code of the silicon wafer on the silicon rod and a second position code of the silicon rod on the silicon ingot.
Optionally, the light attenuation corresponding relation obtaining unit includes:
a position code obtaining subunit, configured to obtain each position code of each silicon wafer according to the first position code and the second position code;
the light attenuation result obtaining subunit is used for obtaining the light attenuation test result of each battery piece prepared by the silicon chip corresponding to each position code;
and the light attenuation corresponding relation obtaining subunit is used for obtaining the corresponding relation between the position code of the silicon wafer and the light attenuation value according to the light attenuation test result.
Optionally, the low light attenuation sheet determining module includes:
the resistivity obtaining unit is used for obtaining a resistivity threshold range of the silicon wafer when the light attenuation value is smaller than a light attenuation preset threshold value according to the corresponding relation between the resistivity and the light attenuation value;
and the low light attenuation piece determining unit is used for determining that the battery piece prepared by the silicon chip is the low light attenuation battery piece when the resistivity of the silicon chip is within the resistivity threshold range.
According to the method and the device for determining the silicon chip, the corresponding relation between the resistivity of each silicon chip and the light attenuation value of the battery piece prepared from the silicon chip is obtained according to the corresponding relation between each position code of each silicon chip and the light attenuation value of the battery piece prepared from the silicon chip and the corresponding relation between each position code and the resistivity of each silicon chip, and the battery piece prepared from the silicon chip is determined to be the battery piece with lower light attenuation according to the corresponding relation between the resistivity and the light attenuation value, so that the problem that in the prior art, due to the light attenuation of the battery piece, the difference exists among the battery pieces under different light attenuation conditions can be solved, the difficulty of the process is increased, and the productivity and the yield of the battery piece are reduced. According to the method and the device for determining the silicon chip, the corresponding relation between the light attenuation value and the resistivity is obtained according to the corresponding relation between the position code of each silicon chip and the light attenuation value of the battery piece prepared by the silicon chip and the resistivity of the silicon chip, so that after the resistivity of the silicon chip with the characteristic of low light attenuation value is determined according to the light attenuation value, the resistivity of the silicon chip determines that the battery piece prepared by the silicon chip is the low light attenuation battery piece, the difference among the battery pieces can be reduced, the light attenuation fluctuation of the battery piece is reduced, the process window is enlarged, the productivity and the yield of the battery piece are improved, and the cost of the battery piece is reduced.
Drawings
Fig. 1 is a flowchart of a silicon wafer determination method according to an embodiment of the present invention;
FIG. 2 is a flowchart of a silicon wafer determination method according to a second embodiment of the present invention;
FIG. 3 is a flowchart of a silicon wafer determination method according to a third embodiment of the present invention;
fig. 4 is a block diagram of a silicon wafer determination apparatus according to a fourth embodiment of the present invention;
fig. 5 is a block diagram of a silicon wafer determination apparatus according to a fifth embodiment of the present invention;
fig. 6 is a block diagram of a structure of another silicon wafer determination apparatus according to a fifth embodiment of the present invention.
Detailed Description
The present invention will be described in further detail with reference to the accompanying drawings and examples. It is to be understood that the specific embodiments described herein are merely illustrative of the invention and are not limiting of the invention. It should be further noted that, for the convenience of description, only some of the structures related to the present invention are shown in the drawings, not all of the structures.
Example one
The embodiment of the invention provides a method for determining a silicon wafer, which is suitable for determining the performance of the silicon wafers with different quality differences. The method can be executed by a silicon wafer determining device provided by the embodiment of the invention, the device can be realized in a software and/or hardware manner, and the device can be integrated in data acquisition or detection equipment. Fig. 1 is a flowchart of a silicon wafer determination method according to an embodiment of the present invention. As shown in fig. 1, a method for determining a silicon wafer according to an embodiment of the present invention specifically includes:
s110, obtaining the corresponding relation between each position code of each silicon chip and the light attenuation value of each battery piece prepared by each silicon chip and the corresponding relation between each position code and the resistivity.
The light attenuation value of the cell prepared from the silicon wafer is the light attenuation value of the electrical property, wherein the electrical property comprises photoelectric conversion efficiency, open circuit voltage, short circuit current, filling factors and the like, and the light attenuation value of the application can be reflected by the attenuation values of the parameters before and after light attenuation.
Illustratively, silicon wafers are used as a base material for semiconductor production, and can be used for manufacturing chips, photovoltaic cells, and the like. For the application of the silicon wafer in the aspect of manufacturing the photovoltaic cell, the silicon wafer can be divided into monocrystalline silicon, polycrystalline silicon and amorphous silicon, and the method is also applicable to the three silicon materials. For polycrystalline silicon, the silicon rod of the present application is a square rod formed after a silicon ingot is cut. In the following, polysilicon is taken as an example for explanation, and the determination method of other silicon materials is the same as the determination method of polysilicon in technical principle, and is not described herein again.
In the process of forming the cell slice from the raw materials, firstly forming a silicon ingot, then cutting the silicon ingot into square rods, and recording the position code of each square rod; inspecting the square bar, removing head and tail, grinding, chamfering, adhering, slicing, degumming and cleaning the sliced silicon wafer, collecting the sample wafer, recording the position code of each silicon wafer in the square bar, and marking the position code on the silicon wafer by laser, wherein the position code is coded by laserThe method comprises the steps of encoding the position of a square rod where a silicon chip is located and the position of the silicon chip in the square rod, encoding the position of a battery piece in a subsequent polycrystalline silicon battery, simultaneously recording the resistivity of each silicon chip, and establishing a one-to-one correspondence relationship between the resistivity and the position codes of different silicon chips; and finally, preparing a double-sided passivated solar cell structure, such as a PERC cell. Illustratively, a silicon wafer is sequentially subjected to texturing, diffusion, etching, and Al
2O
3Back passivation, double-sided SiNx passivation, laser opening, silk screen and sintering to manufacture the polycrystalline silicon battery. The prepared polycrystalline silicon cell can be subjected to light attenuation for 24 hours in light attenuation equipment, light attenuation data of each cell in the polycrystalline silicon cell are tested, and a one-to-one correspondence relationship between light attenuation values and position codes of different silicon wafers is established.
In the process of forming the silicon ingot by raw materials, the crystal needs to be cooled after being solidified, so that the uneven heat dissipation from the edge to the center and from the head to the tail of the silicon ingot is caused, thereby generating thermal stress and further generating a large amount of dislocation in crystal grains; and due to the difference of segregation coefficients of impurity atoms, the impurity atoms form gradient distribution in a silicon ingot in the solidification process, and the performance of each silicon wafer is influenced. Therefore, the silicon wafer can be subjected to position coding according to the position of the silicon wafer on the silicon ingot, then the silicon wafers with different position codes are subjected to resistivity test, and the battery piece prepared by the silicon wafer is subjected to light attenuation test of electrical performance, so that the corresponding relation between the battery pieces prepared by the silicon wafers with different position codes and the light attenuation value and the corresponding relation between the silicon wafers with different position codes and the resistivity are obtained.
S120, obtaining the corresponding relation between the resistivity and the light attenuation value according to the corresponding relation between each position code and the light attenuation value and the corresponding relation between each position code and the resistivity.
Illustratively, when light or current is injected, boron-oxygen complexes are formed in the cell pieces, so that minority carrier lifetime is reduced, and the phenomenon of light decay is generated, while photovoltaic cells prepared from silicon chips with different qualities have different light decay degrees. In addition, besides the influence of the boron-oxygen complex, the battery pieces prepared by using the silicon wafers with different resistivities have great influence on the performance of the battery, for example, the conversion efficiency of the battery pieces gradually increases along with the increase and decrease of the resistivity of the silicon wafers in a certain range. Therefore, the performance of the cell needs to be measured by combining the light attenuation value of the cell and the resistivity of the silicon wafer. Therefore, after the relationship between the position code of the silicon chip and the light attenuation value of the battery piece prepared by the silicon chip and the corresponding relationship between the position code of the silicon chip and the resistivity are obtained, the position code of the silicon chip and the corresponding relationship between the position code of the silicon chip and the resistivity can be combined to obtain the corresponding relationship between the resistivity and the light attenuation value so as to judge the performance of the subsequent battery piece.
S130, determining that the battery piece prepared by the silicon chip is a low light attenuation battery piece according to the corresponding relation between the resistivity and the light attenuation value.
Illustratively, both the light attenuation value of a cell and the resistivity of a silicon wafer influence the conversion efficiency, a cell with a smaller light attenuation value can be determined by the light attenuation value of the cell, a silicon wafer with a resistivity meeting the battery conversion efficiency requirement in the silicon wafer corresponding to the cell with the smaller light attenuation value can be determined by the resistivity of the silicon wafer, and finally the cell prepared by the silicon wafer is determined to be a cell with low light attenuation by combining the light attenuation value and the resistivity. Therefore, the determined silicon wafer can be used for preparing the photovoltaic cell, so that the photovoltaic cell keeps higher conversion efficiency and smaller light attenuation fluctuation.
According to the method for determining the silicon wafer, provided by the embodiment of the invention, the corresponding relation between the light attenuation value and the resistivity can be obtained according to the corresponding relation between the position code of each silicon wafer and the light attenuation value of the battery piece prepared by the silicon wafer and the resistivity of the silicon wafer, so that after the resistivity range of the qualified silicon wafer is determined according to the light attenuation value, the silicon wafer with qualified resistivity in the battery piece with low light attenuation value is determined according to the resistivity of the silicon wafer, therefore, the difference among the battery pieces can be reduced, the light attenuation fluctuation of the battery piece is reduced, the process window is expanded, the productivity and the yield of the battery piece are further improved, and the cost of the battery piece is reduced.
Example two
The present embodiment is optimized on the basis of the foregoing embodiments, and provides a preferable specific method for obtaining the corresponding relationships between the position codes and the light attenuation value and the resistivity on the basis of the foregoing embodiments, specifically: acquiring light attenuation values of the battery pieces and corresponding relations between the position codes and the light attenuation values according to light attenuation test results of the battery pieces prepared by the silicon chips sampled by the different position codes; and acquiring the corresponding relation between each position code and the resistivity according to the test result of the silicon slice resistivity of different position codes. Fig. 2 is a flowchart of a silicon wafer determination method according to a second embodiment of the present invention. As shown in fig. 2, a method for determining a silicon wafer according to an embodiment of the present invention includes:
s210, acquiring light attenuation values of the battery pieces and corresponding relations between the position codes and the light attenuation values according to light attenuation test results of the battery pieces prepared by the silicon chips sampled by the different position codes.
Optionally, the position code of each silicon chip is obtained according to the first position code and the second position code; obtaining a light attenuation test result of each battery piece prepared by the silicon chip corresponding to each position code; and acquiring the corresponding relation between the position code of the silicon chip and the light attenuation value according to the light attenuation test result.
For example, since the light decay detection cannot be directly performed by a silicon wafer, the silicon wafer is generally prepared into a corresponding battery piece, and the light decay detection is performed on the photovoltaic battery. When the prepared battery piece is subjected to light attenuation detection, the silicon chips with different position codes need to be sampled, so that the establishment of the relationship between the subsequent position codes and the light attenuation values of the battery piece prepared by the silicon chips is facilitated. The position codes can be, for example, positions of the silicon wafers on the silicon rods and positions of the silicon rods on the silicon ingots, that is, the positions of the silicon wafers on the silicon rods are marked as first position codes, the positions of the silicon rods on the silicon ingots are marked as second position codes, and finally, the first position codes and the second position codes are combined to perform corresponding position codes on the silicon wafers. For the silicon wafer prepared by the polycrystalline silicon, a silicon ingot is cut into squares to obtain corresponding square rods, then the square rods are sliced, the second position code is the position of the square rods on the silicon ingot, and the first position code is the position of the silicon wafer in the square rods. Therefore, the silicon wafer can be sampled according to the position codes, the light attenuation test is carried out on the battery slices prepared by the sampled silicon wafers, the light attenuation values corresponding to the battery slices prepared by the sampled silicon wafers are obtained, and the corresponding relation between the light attenuation values and the position codes of the silicon wafers is established.
When the silicon wafer is sampled, the silicon wafer can be sampled according to the second position code, for example, 2 to 16 representative square bars in the square bars prepared from A, B, C areas on the silicon ingot can be selected, the positions of the selected square bars on the silicon ingot are recorded, and the second position code is determined; and then sampling according to the first position code, for example, 10 silicon wafers prepared at the head and tail positions of the selected square rod are selected from the silicon wafers prepared by the selected square rod, 10 silicon wafers prepared at other positions are selected at intervals of 100 silicon wafers, the positions of the silicon wafers on the square rod are recorded, the first position code is determined, finally, the sampled silicon wafers are prepared into corresponding battery pieces, and the first position code and the second position code on the silicon wafers are the position codes of the battery pieces.
S220, obtaining the corresponding relation between each position code and the resistivity according to the test results of the silicon slice resistivity of different position codes.
Illustratively, during the preparation of silicon wafers from raw materials, there is a difference in resistivity between the individual wafers due to the difference in segregation coefficient of dopant atoms. Therefore, the resistivity of each silicon wafer needs to be measured separately, and the measuring method is various, for example, the radial resistivity of the silicon wafer can be measured by adopting a four-probe method. Because each silicon chip has a corresponding position code, the corresponding relation between the measured silicon chip resistivity and the position code can be established.
S230, acquiring the corresponding relation between the resistivity and the light attenuation value according to the corresponding relation between each position code and the light attenuation value and the corresponding relation between each position code and the resistivity;
s240, determining that the battery piece prepared by the silicon chip is a low light attenuation battery piece according to the corresponding relation between the resistivity and the light attenuation value.
According to the silicon wafer determining method provided by the embodiment of the invention, according to the specific obtaining method of the corresponding relation between the position code of the silicon wafer and the light attenuation value of the battery piece prepared by the silicon wafer as well as the corresponding relation between the position code of the silicon wafer and the resistivity of the silicon wafer, the corresponding relation between the light attenuation value and the resistivity is further determined according to the corresponding relation between the position code of the silicon wafer and the light attenuation value of the battery piece prepared by the silicon wafer as well as the resistivity of the silicon wafer, so that the silicon wafer with low light attenuation characteristic can be determined by combining the light attenuation value and the resistivity, the difference between the battery pieces is reduced, the light attenuation fluctuation of the battery pieces is reduced, the process window is enlarged, the productivity and the yield of the battery pieces are.
EXAMPLE III
The present embodiment is optimized on the basis of the foregoing embodiment, and provides a preferable specific determination method for a slice on the basis of the foregoing embodiment, specifically: according to the corresponding relation between the resistivity and the light attenuation value, acquiring the resistivity of the silicon wafer when the light attenuation value is smaller than a light attenuation preset threshold value; and when the resistivity of the silicon wafer is within the preset threshold range of the resistivity, determining that the battery piece prepared by the silicon wafer is a low light attenuation battery piece. Fig. 3 is a flowchart of a silicon wafer determination method according to a third embodiment of the present invention. As shown in fig. 3, the silicon wafer determination method provided by the implementation of the present invention includes:
s310, acquiring the corresponding relation between each position code of each silicon chip and the light attenuation value of each battery piece prepared by each silicon chip and between each position code and the resistivity;
s320, acquiring the corresponding relation between the resistivity and the light attenuation value according to the corresponding relation between each position code and the light attenuation value and the corresponding relation between each position code and the resistivity;
s330, acquiring a resistivity threshold range of the silicon wafer when the light attenuation value is smaller than a light attenuation preset threshold according to the corresponding relation between the resistivity and the light attenuation value;
s340, when the resistivity of the silicon wafer is within the resistivity threshold range, determining that the battery piece prepared from the silicon wafer is a low light attenuation battery piece.
Illustratively, the position relationship between the light attenuation value and the resistivity is obtained by the corresponding relationship between the position code of the silicon chip and the light attenuation value of the battery piece prepared by the silicon chip and the position relationship between the position code of the silicon chip and the resistivity of the silicon chip, and the light attenuation value and the resistivity have certain influence on the conversion efficiency of the battery piece. The conversion efficiency is reduced more when the light attenuation value of the battery piece is larger, and the conversion efficiency of the battery is increased and then reduced along with the increase of the resistivity within a certain resistivity range. Therefore, in order to enable the photovoltaic cell prepared from the silicon chip to have smaller light attenuation fluctuation and reasonable conversion efficiency, the cell piece with the lower light attenuation value, namely the cell piece smaller than the preset threshold value of the light attenuation, can be determined according to the light attenuation value, then the silicon chip with the resistivity within the threshold value range of the resistivity in the silicon chip corresponding to the cell piece with the lower light attenuation value, namely the maximum value and the minimum value of the resistivity of the silicon chip corresponding to the cell piece with the lower light attenuation value, can be determined according to the corresponding relation between the light attenuation value and the resistivity, and then whether the cell piece prepared from the silicon chip is the low light attenuation cell piece or not can be determined according to the fact whether the resistivity of the silicon chip is within the preset threshold value range of the resistivity. When the resistivity of the silicon wafer is within the threshold range, the cell prepared from the silicon wafer is a low light attenuation cell.
According to the method for determining the silicon wafer, provided by the embodiment of the invention, the cell with the light attenuation value smaller than the light attenuation preset threshold value is determined according to the light attenuation value of the cell prepared by each silicon wafer, and then the silicon wafer with the resistivity within the preset threshold value range in the silicon wafer with the light attenuation value smaller than the preset threshold value is determined according to the relation between the light attenuation value and the resistivity, so that the cell prepared by the silicon wafer is determined to be the low light attenuation cell by combining the light attenuation value and the resistivity, and the conversion efficiency of the cell is improved on the premise of reducing the fluctuation of the light attenuation.
Example four
Fig. 4 is a block diagram of a silicon wafer determination apparatus according to a fourth embodiment of the present invention. The device is suitable for determining the performance of the silicon wafers with different quality differences, can be realized in a software and/or hardware mode, and can be integrated in data acquisition or detection equipment. As shown in fig. 4, the apparatus includes: a correspondence obtaining module 10, a correspondence determining module 20, and a low light attenuation sheet determining module 30.
The correspondence obtaining module 10 is configured to obtain a correspondence between each position code of each silicon wafer and a light attenuation value of a battery piece prepared from each silicon wafer, and each position code and resistivity of each silicon wafer;
the correspondence determining module 20 is configured to obtain a correspondence between the resistivity and the light attenuation value according to a correspondence between each position code and the light attenuation value and a correspondence between each position code and the resistivity;
the low light attenuation sheet determining module 30 is configured to determine, according to the corresponding relationship between the resistivity and the light attenuation value, that the cell prepared by the silicon wafer is a low light attenuation cell.
According to the silicon wafer determining device provided by the embodiment of the invention, the corresponding relation between the light attenuation value and the resistivity can be obtained according to the corresponding relation between the position code of each silicon wafer and the light attenuation value of the battery piece prepared by the silicon wafer and the resistivity of the silicon wafer, so that after the battery piece prepared by the silicon wafer with the low light attenuation value is determined according to the light attenuation value, the battery piece with the qualified resistivity in the battery piece with the low light attenuation value is determined according to the resistivity of the silicon wafer, the difference among the battery pieces can be reduced, the light attenuation fluctuation of the battery piece is reduced, the process window is enlarged, the productivity and the yield of the battery piece are further improved, and the cost of the battery piece is reduced.
EXAMPLE five
Fig. 5 is a block diagram of a silicon wafer determination apparatus according to a fifth embodiment of the present invention. The present embodiment is optimized on the basis of the above embodiments, and provides a preferable correspondence obtaining module 10 of the apparatus, which includes: a light attenuation correspondence obtaining unit 11 and a resistivity correspondence obtaining unit 12.
The light attenuation corresponding relation obtaining unit 11 is configured to obtain light attenuation values of the battery pieces and corresponding relations between the position codes and the light attenuation values according to light attenuation test results of the battery pieces prepared from the silicon chips sampled by the different position codes;
the resistivity corresponding relation obtaining unit 12 is configured to obtain a corresponding relation between each position code and the resistivity according to the test result of the silicon wafer resistivity of different position codes.
Optionally, as shown in fig. 5, the low light attenuation determination module 30 includes, based on the foregoing embodiment: a resistivity acquisition unit 31 and a low light attenuation sheet determination unit 32.
The resistivity obtaining unit 31 is configured to obtain a resistivity threshold range of the silicon wafer when the light attenuation value is smaller than a light attenuation preset threshold according to a corresponding relationship between the resistivity and the light attenuation value;
the low light attenuation piece determining unit 32 is configured to determine that the battery piece manufactured by the silicon wafer is a low light attenuation battery piece when the resistivity of the silicon wafer is within the resistivity threshold range.
Optionally, the position code includes a first position code of the silicon wafer on the silicon rod and a second position code of the silicon rod on the silicon ingot.
Optionally, fig. 6 is a block diagram of a structure of another silicon wafer determination apparatus according to a fifth embodiment of the present invention. As shown in fig. 6, on the basis of the above embodiment, the light attenuation corresponding relation obtaining unit 11 in the apparatus for determining a silicon wafer according to the embodiment of the present invention includes: a position code acquisition subunit 111, a light attenuation result acquisition subunit 112, and a light attenuation correspondence relationship acquisition subunit 113.
The position code obtaining subunit 111 is configured to obtain each position code of the silicon wafer according to the first position code and the second position code;
the light attenuation result obtaining subunit 112 is configured to obtain a light attenuation test result of each battery cell prepared from the silicon wafer corresponding to each position code;
the light attenuation corresponding relation obtaining subunit 113 is configured to obtain, according to the light attenuation test result, a corresponding relation between the position code of the silicon wafer and the light attenuation value.
The silicon wafer determination apparatus according to this embodiment is used to execute the silicon wafer determination method according to the foregoing embodiments, and the technical principle and the generated technical effect are similar, and are not described herein again.
It is to be noted that the foregoing is only illustrative of the preferred embodiments of the present invention and the technical principles employed. It will be understood by those skilled in the art that the present invention is not limited to the particular embodiments described herein, but is capable of various obvious changes, rearrangements and substitutions as will now become apparent to those skilled in the art without departing from the scope of the invention. Therefore, although the present invention has been described in greater detail by the above embodiments, the present invention is not limited to the above embodiments, and may include other equivalent embodiments without departing from the spirit of the present invention, and the scope of the present invention is determined by the scope of the appended claims.
Claims (8)
1. A method for determining a silicon wafer, comprising:
acquiring the corresponding relation between each position code of each silicon chip and the light attenuation value of a battery piece prepared by each silicon chip and the resistivity of each silicon chip;
acquiring the corresponding relation between the resistivity and the light attenuation value according to the corresponding relation between each position code and the light attenuation value and the corresponding relation between each position code and the resistivity;
determining the cell prepared by the silicon wafer as a low light attenuation cell according to the corresponding relation between the resistivity and the light attenuation value; determining the cell prepared by the silicon wafer to be a low light attenuation cell according to the corresponding relation between the resistivity and the light attenuation value, wherein the method comprises the following steps:
according to the corresponding relation between the resistivity and the light attenuation value, acquiring the resistivity threshold range of the silicon wafer when the light attenuation value is smaller than a light attenuation preset threshold;
and when the resistivity of the silicon wafer is within the resistivity threshold range, determining that the battery piece prepared by the silicon wafer is a low light attenuation battery piece.
2. The method according to claim 1, wherein the obtaining of the corresponding relationship between the position code of each silicon wafer and the light attenuation value of each battery piece prepared from each silicon wafer and the corresponding relationship between each position code and the resistivity of each silicon wafer comprises:
acquiring light attenuation values of the battery pieces and corresponding relations between the position codes and the light attenuation values according to light attenuation test results of the battery pieces prepared by the silicon chips sampled by the different position codes;
and acquiring the corresponding relation between each position code and the resistivity according to the test result of the silicon slice resistivity of different position codes.
3. The method of claim 2, wherein the position code comprises a first position code of the silicon wafer on a silicon rod and a second position code of the silicon rod on a silicon ingot.
4. The method as claimed in claim 3, wherein obtaining the light attenuation values of the battery pieces and the corresponding relationship between each position code and the light attenuation values according to the light attenuation test results of the battery pieces prepared from the silicon chips sampled according to different position codes comprises:
acquiring each position code of each silicon chip according to the first position code and the second position code;
obtaining the light attenuation test result of each battery piece prepared by each silicon chip of each position code;
and acquiring the corresponding relation between the position code of the silicon chip and the light attenuation value according to the light attenuation test result.
5. An apparatus for determining a silicon wafer, comprising:
the corresponding relation acquisition module is used for acquiring the corresponding relation between each position code of each silicon chip and the light attenuation value of each battery piece prepared by each silicon chip and the resistivity of each silicon chip;
the corresponding relation determining module is used for acquiring the corresponding relation between the resistivity and the light attenuation value according to the corresponding relation between each position code and the light attenuation value and the corresponding relation between each position code and the resistivity;
the low light attenuation piece determining module is used for determining the battery piece prepared by the silicon chip as a low light attenuation battery piece according to the corresponding relation between the resistivity and the light attenuation value; wherein, the low light attenuation piece determining module comprises:
the resistivity obtaining unit is used for obtaining a resistivity threshold range of the silicon wafer when the light attenuation value is smaller than a light attenuation preset threshold value according to the corresponding relation between the resistivity and the light attenuation value;
and the low light attenuation piece determining unit is used for determining that the battery piece prepared by the silicon chip is the low light attenuation battery piece when the resistivity of the silicon chip is within the resistivity threshold range.
6. The apparatus of claim 5, wherein the correspondence obtaining module comprises:
the light attenuation corresponding relation obtaining unit is used for obtaining light attenuation values of the battery pieces and corresponding relations between the position codes and the light attenuation values according to light attenuation test results of the battery pieces prepared by the silicon chips sampled by the different position codes;
and the resistivity corresponding relation obtaining unit is used for obtaining the corresponding relation between each position code and the resistivity according to the test result of the silicon slice resistivity of different position codes.
7. The device of claim 6, wherein the position code comprises a first position code of the silicon wafer on a silicon rod and a second position code of the silicon rod on a silicon ingot.
8. The apparatus according to claim 7, wherein the light attenuation correspondence obtaining unit includes:
a position code obtaining subunit, configured to obtain each position code of each silicon wafer according to the first position code and the second position code;
the light attenuation result obtaining subunit is used for obtaining the light attenuation test result of each battery piece prepared by the silicon chip corresponding to each position code;
and the light attenuation corresponding relation obtaining subunit is used for obtaining the corresponding relation between the position code of the silicon wafer and the light attenuation value according to the light attenuation test result.
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| CN112549331B (en) * | 2019-09-10 | 2024-03-15 | 苏州阿特斯阳光电力科技有限公司 | Square silicon ingot and preparation method thereof, silicon wafer and preparation method thereof |
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| CN105790710A (en) * | 2014-12-23 | 2016-07-20 | 国家电网公司 | Potential induced degradation testing method for photovoltaic modules |
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| CN104811136B (en) * | 2015-04-21 | 2017-06-06 | 苏州普德认证有限公司 | The method of testing of photovoltaic module optical attenuation |
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| CN106910697A (en) * | 2017-04-19 | 2017-06-30 | 常州时创能源科技有限公司 | The detection method of the anti-light ability of declining of crystal silicon solar cell sheet |
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Address after: No. 199, deer mountain road, Suzhou high tech Zone, Jiangsu Province Patentee after: CSI Cells Co.,Ltd. Patentee after: Atlas sunshine Power Group Co.,Ltd. Address before: No. 199, deer mountain road, Suzhou high tech Zone, Jiangsu Province Patentee before: CSI Cells Co.,Ltd. Patentee before: CSI SOLAR POWER GROUP Co.,Ltd. |