CN108198907A - A kind of determining method and device of silicon chip - Google Patents
A kind of determining method and device of silicon chip Download PDFInfo
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- CN108198907A CN108198907A CN201711485367.7A CN201711485367A CN108198907A CN 108198907 A CN108198907 A CN 108198907A CN 201711485367 A CN201711485367 A CN 201711485367A CN 108198907 A CN108198907 A CN 108198907A
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 282
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 282
- 239000010703 silicon Substances 0.000 title claims abstract description 282
- 238000000034 method Methods 0.000 title claims abstract description 46
- 238000012360 testing method Methods 0.000 claims description 32
- 238000004519 manufacturing process Methods 0.000 abstract description 11
- 230000005611 electricity Effects 0.000 description 9
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 9
- 238000012546 transfer Methods 0.000 description 9
- 239000013078 crystal Substances 0.000 description 7
- 239000000523 sample Substances 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 238000002161 passivation Methods 0.000 description 6
- 229920005591 polysilicon Polymers 0.000 description 6
- 238000002360 preparation method Methods 0.000 description 6
- 238000001514 detection method Methods 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- XGCTUKUCGUNZDN-UHFFFAOYSA-N [B].O=O Chemical compound [B].O=O XGCTUKUCGUNZDN-UHFFFAOYSA-N 0.000 description 4
- 229910004205 SiNX Inorganic materials 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- 238000005070 sampling Methods 0.000 description 3
- 239000002210 silicon-based material Substances 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 238000012797 qualification Methods 0.000 description 2
- 238000005204 segregation Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229920000297 Rayon Polymers 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 235000013312 flour Nutrition 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 235000008216 herbs Nutrition 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000003801 milling Methods 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 210000002268 wool Anatomy 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention discloses a kind of determining method and devices of silicon chip, light decay value and each position encoded correspondence with silicon chip resistivity of this method according to each position encoded cell piece prepared with silicon chip of each silicon chip, obtain the correspondence of resistivity and light decay value, and by the correspondence of resistivity and light decay value, determine cell piece prepared by the silicon chip cell piece relatively low for light decay.So as to reduce the difference between silicon chip, the light decay fluctuation of cell piece is reduced, expands process window, and then improve the production capacity and yield of cell piece, reduces the cost of cell piece.
Description
Technical field
The present embodiments relate to technical field of data processing more particularly to a kind of determining method and devices of silicon chip.
Background technology
Solar cell is produced electricl energy using the photoelectric effect of semiconductor PN, is a kind of sustainable clean energy resource.Its
Silica-based solar cell, iii-v solar cell etc. can be divided into, wherein, crystal silicon solar battery is most widely used in current industry
A kind of general solar cell, such as the fields such as it can be applied to generate electricity by way of merging two or more grid systems, off-network power generation, business application.
Currently, in crystal silicon solar battery polycrystalline silicon solar cell due to per unit area yield yield is big, at low cost, purity requirement is low
The advantages that and rapidly develop, compared with single crystal silicon solar cell have equality market share occupancy volume.But due to inside it
There are a large amount of crystal boundaries, higher dislocation densities and impurity concentration, cause its transfer efficiency relatively low.To cause polycrystalline silicon solar cell
Efficiency raising match with its manufacturing cost, mostly using localized contact the back of the body be passivated (PERC) technology as crystal silicon solar battery
Preparation method.The preparation method is by using SiO2/ SiNx or Al2O3/ SiNx stack membranes pass through successively as back of the body passivation dielectric layer
Cross back side fluting, silk-screen printing, sintering form rear side local contact, prepare passivation emitter and back surface battery (PERC) structure
Polycrystalline silicon solar cell, the front and back of the battery structure be carried out at the same time surface passivation, and crystalline silicon body material is answered at this time
Close the key factor for just becoming and restricting solar cell photoelectric transfer efficiency.
However in P-type crystal silicon, since illumination or electric current injection lead to the boron oxygen complex that boron and oxygen are formed in silicon chip,
So that minority carrier life time reduces, make its output power light decay, so as to generate light decay effect (LID).Other than boron oxygen is compound, also
Other still noncommittal reasons, but generally believe it is related with bluk recombination, i.e., silicon materials on light decay influence it is very big.Existing light decay
Inhibition mainly realize that this scheme can have light decay a good inhibiting effect by introducing annealing device, but different silicon
The stability of piece light decay caused by the difference of quality is poor.
Invention content
In view of this, the present invention provides a kind of determining method and device of silicon chip, can be according to silicon chip and its corresponding battery
The test result of piece determines there is the silicon chip of low light attenuation characteristic, to obtain stable cell piece light decay difference, reduces sun electricity
The light decay fluctuation in pond.
In a first aspect, an embodiment of the present invention provides a kind of determining method of silicon chip, including：
Obtain the light decay value of each position encoded cell piece prepared with each silicon chip of each silicon chip and each
The position encoded correspondence with each silicon chip resistivity；
According to each described position encoded and light decay value and each position encoded pair with the resistivity
It should be related to, obtain the correspondence of the resistivity and the light decay value；
According to the correspondence of the resistivity and the light decay value, determine that cell piece prepared by the silicon chip is low light attenuation
Cell piece.
Optionally, the position encoded light decay corresponding with the cell piece of each silicon chip preparation for obtaining each silicon chip
Value and each position encoded correspondence with each silicon chip resistivity, including：
According to the light decay test result of cell piece prepared by the silicon chip of different location code sample, the battery is obtained
The light decay value of piece and each position encoded correspondence with the light decay value；
According to different location encode the silicon chip resistivity test result, obtain it is each it is described it is position encoded with it is described
The correspondence of resistivity.
Optionally, the position encoded first position coding including the silicon chip on silicon rod and the silicon rod are described
Second position coding on silicon ingot.
Optionally, the light decay test result of the cell piece prepared according to the silicon chip of different location code sample, obtains
The light decay value of the cell piece and each position encoded correspondence with the light decay value, including：
According to first position coding and second position coding, the position encoded of each silicon chip is obtained；
Obtain the light decay test result of cell piece prepared by each position encoded each silicon chip；
According to the light decay test result, the correspondence of the position encoded and light decay value of the silicon chip is obtained.
Optionally, the correspondence according to the resistivity and the light decay value determines electricity prepared by the silicon chip
Pond piece is low light attenuation battery light decay piece, including：
According to the correspondence of the resistivity and the light decay value, when obtaining the light decay value less than light decay predetermined threshold value
The resistivity threshold range of the silicon chip；
When the resistivity of the silicon chip is in the resistivity threshold range, determine that cell piece prepared by the silicon chip is
Low light attenuation cell piece.
Second aspect, an embodiment of the present invention provides a kind of determining device of silicon chip, including：
Correspondence acquisition module, for obtaining each position encoded electricity prepared with each silicon chip of each silicon chip
The light decay value of pond piece and each position encoded correspondence with each silicon chip resistivity；
Correspondence determining module, for according to each described position encoded and the light decay value and each institute's rheme
Coding and the correspondence of the resistivity are put, obtains the correspondence of the resistivity and the light decay value；
Low light attenuation piece determining module for the correspondence according to the resistivity and the light decay value, determines the silicon
Cell piece prepared by piece is low light attenuation cell piece.
Optionally, the correspondence acquisition module includes：
Light decay correspondence acquiring unit, for the cell piece that is prepared according to the silicon chip of different location code sample
Light decay test result obtains the light decay value of the cell piece and each position encoded pass corresponding with the light decay value
System；
Resistivity correspondence acquiring unit, for the test knot of the silicon chip resistivity encoded according to different location
Fruit obtains each position encoded correspondence with the resistivity.
Optionally, the position encoded first position coding including the silicon chip on silicon rod and the silicon rod are described
Second position coding on silicon ingot.
Optionally, the light decay correspondence acquiring unit includes：
Position encoded acquisition subelement for being encoded according to first position coding and the second position, obtains each
A silicon chip it is each position encoded；
Light decay result obtains subelement, for obtaining electricity prepared by each position encoded corresponding each silicon chip
The light decay test result of pond piece；
Light decay correspondence obtains subelement, for according to the light decay test result, the position for obtaining the silicon chip to be compiled
Code and the correspondence of the light decay value.
Optionally, the low light attenuation piece determining module includes：
Resistivity acquiring unit for the correspondence according to the resistivity and the light decay value, obtains the light decay
The resistivity threshold range of silicon chip when value is less than light decay predetermined threshold value；
Low light attenuation piece determination unit, for when the resistivity of the silicon chip is in the resistivity threshold range, determining
Cell piece prepared by the silicon chip is low light attenuation cell piece.
A kind of determining method and device of silicon chip provided by the invention, this method pass through each position according to each silicon chip
The light decay value for the cell piece that coding is prepared with silicon chip and each position encoded correspondence with resistivity, obtain each silicon
Sheet resistivity and the correspondence of light decay value, and by the correspondence of resistivity and light decay value, determine battery prepared by silicon chip
The piece cell piece relatively low for light decay, so as to solve to cause different light decays due to the presence of cell piece light decay in the prior art
It is had differences between the cell piece of situation, increases the difficulty of manufacturing process, reduce the production capacity and yield of cell piece.The present invention
The determining method and device of a kind of silicon chip provided, according to the position encoded cell piece prepared respectively with silicon chip of each silicon chip
The correspondence of light decay value and the resistivity of silicon chip obtains the correspondence of light decay value and resistivity, with can be according to light decay value
After determining the silicon chip resistivity with low light attenuation value characteristic, then the cell piece for determining to prepare with silicon chip by the resistivity of silicon chip
For low light attenuation cell piece, so as to reduce the difference between cell piece, the light decay fluctuation of cell piece is reduced, expands process window
Mouthful, and then the production capacity and yield of cell piece are improved, reduce the cost of cell piece.
Description of the drawings
Fig. 1 is the flow chart that a kind of silicon chip that the embodiment of the present invention one provides determines method；
Fig. 2 is the flow chart that a kind of silicon chip provided by Embodiment 2 of the present invention determines method；
Fig. 3 is the flow chart that a kind of silicon chip that the embodiment of the present invention three provides determines method；
Fig. 4 is a kind of structure diagram for silicon chip determining device that the embodiment of the present invention four provides；
Fig. 5 is a kind of structure diagram for silicon chip determining device that the embodiment of the present invention five provides；
Fig. 6 is the structure diagram for another silicon chip determining device that the embodiment of the present invention five provides.
Specific embodiment
The present invention is described in further detail with reference to the accompanying drawings and examples.It is understood that this place is retouched
The specific embodiment stated is used only for explaining the present invention rather than limitation of the invention.It also should be noted that in order to just
Part related to the present invention rather than entire infrastructure are illustrated only in description, attached drawing.
Embodiment one
An embodiment of the present invention provides a kind of determining method of silicon chip, suitable for the silicon chip performance to different quality discrepancies into
The determining situation of row.This method can be performed by a kind of determining device of silicon chip provided in an embodiment of the present invention, which can
It is realized by the way of software and/or hardware, and the device can be integrated in data acquisition or detection device.Fig. 1 is the present invention
A kind of silicon chip that embodiment one provides determines the flow chart of method.As shown in Figure 1, a kind of silicon chip provided in an embodiment of the present invention
The method of determining specifically includes：
S110, each position encoded light decay value of cell piece prepared with each silicon chip for obtaining each silicon chip, with
And each position encoded correspondence with resistivity.
It is electrical property light decay value by the light decay value of cell piece that silicon chip is prepared, wherein electrical property is imitated including opto-electronic conversion
Rate, open-circuit voltage, short circuit current, fill factor etc., the light decay value of the application can be by above-mentioned parameters before and after light decay
Pad value embody.
Illustratively, basic material of the silicon chip as semiconductor production, available for manufacture chip, photovoltaic cell etc..For
Silicon chip can be divided into monocrystalline silicon, polysilicon and non-crystalline silicon in the application in terms of manufacturing photovoltaic cell, and the present processes are same
Sample is applicable in above-mentioned three kinds of silicon materials.For polysilicon, the silicon rod of the application is the square rod formed behind the silicon ingot side of cuing open.Below
Being illustrated by taking polysilicon as an example, the determining method of other silicon materials is identical with the technical principle of the determining method of polysilicon,
Details are not described herein.
Polysilicon is initially formed silicon ingot, then silicon ingot is cutd open to rectangular into square rod, note in the process that cell piece is formed from raw material
Record the position encoded of each square rod；Test again to square rod, go end to end, after flour milling, chamfering viscose glue prepare slice, sliced institute
Silicon chip collect print after degumming, cleaning, it is position encoded in square rod to record every silicon chip, and with laser in silicon chip
Upper label is position encoded, and square rod where which includes silicon chip is position encoded and silicon chip is position encoded in square rod,
This is also the position encoded of cell piece in follow-up polycrystal silicon cell, while also to record the resistivity per a piece of silicon chip, and establish
The one-to-one relationship that resistivity is encoded from different position of silicon wafer；Passivation on double surfaces solar battery structure is finally prepared to, such as
PERC batteries.Illustratively, making herbs into wool, diffusion, etching, Al are carried out successively to silicon chip2O3Back of the body passivation, two-sided SiNx passivation, laser are opened
Mouth, silk screen, sintering circuit are fabricated to polycrystal silicon cell.Prepared polycrystal silicon cell can in light decay equipment light decay 24 hours,
The light decay data of every cell piece in polycrystal silicon cell is tested out, and establishes a pair that light decay value is encoded from different position of silicon wafer
It should be related to.
During forming silicon ingot in raw material, crystal needs to solidify postcooling, this will cause the edge of silicon ingot to arrive
Center and head are radiated uneven to tail portion, so as to generate thermal stress, and then make to generate a large amount of dislocations in crystal grain；And because
The difference of foreign atom segregation coefficient, foreign atom can form gradient distribution in silicon ingot in process of setting, influence each silicon chip
Performance.Thus, it can be position encoded to silicon chip progress according to position of the silicon chip on silicon ingot, then the silicon chip to different location coding
It carries out resistivity measurement and the cell piece to being prepared using the silicon chip carries out the light decay test of electrical property, so as to obtain difference
The silicon chip and resistance of correspondence and different location coding between cell piece and light decay value prepared by position encoded silicon chip
Correspondence between rate.
S120, according to each described position encoded with the light decay value and each described position encoded with the resistance
The correspondence of rate obtains the correspondence of the resistivity and the light decay value.
Illustratively, when illumination or electric current inject, boron oxygen complex will be formed in cell piece, its minority carrier life time is caused to drop
Low, the phenomenon that generating light decay, and the light decay degree of the photovoltaic cell prepared by the silicon chip of different quality is different.In addition, except boron oxygen
Outside the influence of complex, using the cell piece of the silicon chip preparation of different resistivity, will also great shadow be caused to the performance of battery
It rings, such as the increase and decrease of silicon chip resistivity, the transfer efficiency of cell piece are gradually incremented by certain range.It is then desired to
The factor with reference to of both the light decay value of cell piece and the resistivity of silicon chip weighs the performance of cell piece.Getting silicon as a result,
Pair of the position encoded and resistivity of relationship and silicon chip between cell piece light decay value prepared by the position encoded and silicon chip of piece
After should being related to, the two can be combined, obtain the correspondence between resistivity and light decay value, for sentencing for further battery piece performance
It is fixed.
S130, the correspondence according to the resistivity and the light decay value determine that cell piece prepared by the silicon chip is
Low light attenuation cell piece.
Illustratively, the light decay value of cell piece and the resistivity of silicon chip will all have an impact transfer efficiency, can pass through elder generation
The smaller cell piece of light decay value is determined, then determine smaller light decay value by silicon chip resistivity by the light decay value size of cell piece
Resistivity meets the silicon chip of battery conversion efficiency requirement in the corresponding silicon chip of cell piece, is mutually tied with resistivity eventually by light decay value
It closes, the cell piece for determining silicon chip preparation is the cell piece of low light attenuation.Determined silicon chip can be used as a result, and prepare photovoltaic electric
Pond so that the photovoltaic cell keeps higher transfer efficiency, smaller light decay fluctuation.
A kind of determining method of silicon chip provided in an embodiment of the present invention, can according to each silicon chip it is position encoded respectively with
The correspondence of the light decay value of cell piece prepared by silicon chip and the resistivity of silicon chip obtains light decay value pass corresponding with resistivity
System after the electrical resistivity range of qualified silicon chip can be determined according to light decay value, then by the resistivity of silicon chip determines low light attenuation
The silicon chip of resistivity qualification in the cell piece of value so as to reduce the difference between cell piece, reduces the light decay wave of cell piece
It is dynamic, expand process window, and then improve the production capacity and yield of cell piece, reduce the cost of cell piece.
Embodiment two
The present embodiment is optimized on the basis of above-described embodiment, provides preferably on the basis of above-described embodiment
It is upper obtain it is position encoded respectively with light decay value and the specific method of the correspondence of resistivity, specially：It is compiled according to different location
The light decay test result of cell piece prepared by the silicon chip of code sampling, obtains the light decay value of the cell piece and each institute
State position encoded and light decay value correspondence；According to different location encode the silicon chip resistivity test result,
Obtain each position encoded correspondence with the resistivity.Fig. 2 is a kind of silicon chip provided by Embodiment 2 of the present invention
Determine the flow chart of method.As shown in Fig. 2, a kind of determining method of silicon chip provided in an embodiment of the present invention, including：
The light decay test result of S210, the cell piece prepared according to the silicon chip of different location code sample obtain institute
State the light decay value of cell piece and each position encoded correspondence with the light decay value.
Optionally, it is encoded according to first position coding and the second position, obtains the position of each silicon chip
Coding；Obtain the light decay test result of cell piece prepared by each position encoded corresponding each silicon chip；According to institute
Light decay test result is stated, obtains the correspondence of the position encoded and light decay value of the silicon chip.
Illustratively, since directly light decay detection can not be carried out by silicon chip, it will usually which silicon chip is prepared into corresponding battery
Piece, and light decay detection is carried out to photovoltaic cell.And when carrying out light decay detection for being prepared into cell piece, it needs to compile different location
The silicon chip of code is sampled, the foundation of relationship between the light decay value of cell piece prepared in order to follow-up location coding and silicon chip.
It can be for example position and silicon rod position on silicon ingot of the silicon chip on silicon rod that this is position encoded, i.e., by silicon chip on silicon rod
Location is denoted as first position coding, and position of the silicon rod on silicon ingot is denoted as second position coding, most first position at last
Coding and second position coding combine, and are carried out for each silicon chip corresponding position encoded.And for silicon chip prepared by polysilicon, lead to
It is often that the silicon ingot side of cuing open is obtained into corresponding square rod, then square rod is sliced, second position coding is square rod in silicon ingot at this time
On position, first position is encoded to position of the silicon chip in square rod.As a result, can according to it is position encoded carry out silicon chip sampling,
Light decay test is carried out to the cell piece prepared by the silicon chip sampled again, cell piece prepared by each silicon chip sampled is corresponding
Light decay value establishes out the correspondence between light decay value and position of silicon wafer coding.
When being sampled to silicon chip, can be sampled, such as can choose by silicon ingot according to second position coding first
2-16 representative square rod in square rod prepared by upper tri- regions of A, B, C, and selected square rod is recorded on silicon ingot
Position, determine the second position encode；Then it is sampled further according to first position coding, such as can be selected
Each 10 of silicon chip prepared by square rod head and the tail position is chosen in silicon chip prepared by square rod, silicon chip prepared by other positions is at interval of 100
Piece chooses 10, and records silicon chip position on square rod, determines that first position encodes, the silicon chip of sampling finally is prepared into phase
The cell piece answered, and the first position coding on the silicon chip and second position coding are the position encoded of cell piece.
The test result of S220, the silicon chip resistivity encoded according to different location obtain each described position encoded
With the correspondence of the resistivity.
Illustratively, during silicon chip is prepared by raw material, due to the difference of foreign atom segregation coefficient, cause each
Resistivity between a silicon chip has differences.It is then desired to the resistivity to each silicon chip measures respectively, the measuring method
It is varied, such as the radial direction resistivity that four probe method measures silicon chip may be used.Since each silicon chip has corresponding position
Put coding, thus can establish out measured silicon chip resistivity and it is position encoded between correspondence.
S230, according to each described position encoded with the light decay value and each described position encoded with the resistance
The correspondence of rate obtains the correspondence of the resistivity and the light decay value；
S240, the correspondence according to the resistivity and the light decay value determine that cell piece prepared by the silicon chip is
Low light attenuation cell piece.
A kind of determining method of silicon chip provided in an embodiment of the present invention, the battery prepared according to position of silicon wafer coding with silicon chip
Light decay value and position of silicon wafer coding and the specific acquisition methods of resistivity correspondence of piece, further pass through position of silicon wafer
The light decay value for the cell piece that coding is prepared respectively with silicon chip, the correspondence of the resistivity of silicon chip, determine light decay value and resistance
The correspondence of rate, thus, it is possible to combine light decay value to determine the silicon chip with low light attenuation characteristic with resistivity, so as to reduce electricity
Difference between the piece of pond reduces the light decay fluctuation of cell piece, expands process window, and then improve the production capacity and yield of cell piece,
Reduce the cost of cell piece.
Embodiment three
The present embodiment is optimized on the basis of above-described embodiment, provides preferably on the basis of above-described embodiment
On to the specifically determining method of piece, specially：According to the correspondence of the resistivity and the light decay value, the light decay is obtained
The resistivity of silicon chip when value is less than light decay predetermined threshold value；When the resistivity of the silicon chip is in resistivity preset threshold range
When, determine that cell piece prepared by the silicon chip is low light attenuation cell piece.Fig. 3 is that a kind of silicon chip that the embodiment of the present invention three provides is true
Determine the flow chart of method.As shown in figure 3, the silicon chip that the present invention implements to provide determines method, including：
S310, each position encoded light decay value of cell piece prepared with each silicon chip for obtaining each silicon chip, with
And each position encoded correspondence with resistivity；
S320, according to each described position encoded with the light decay value and each described position encoded with the resistance
The correspondence of rate obtains the correspondence of the resistivity and the light decay value；
S330, the correspondence according to the resistivity and the light decay value, obtain the light decay value and are preset less than light decay
The resistivity threshold range of silicon chip during threshold value；
S340, when the resistivity of the silicon chip is in the resistivity threshold range, determine electricity prepared by the silicon chip
Pond piece is low light attenuation cell piece.
Illustratively, by the position encoded and silicon chip of silicon chip prepare cell piece light decay value between correspondence, with
And the position encoded position relationship between the resistivity of silicon chip of silicon chip, the position obtained between light decay value and resistivity are closed
System, and light decay value and resistivity have certain influence to the transfer efficiency of cell piece.Wherein, the light decay value of cell piece is bigger, turns
Changing efficiency reduces more, and in certain electrical resistivity range, and the transfer efficiency of battery can first increase with the increase of resistivity
Reduce after big.Therefore, to cause photovoltaic cell prepared by silicon chip that there is the fluctuation of smaller light decay and rational transfer efficiency,
Can the relatively low cell piece of light decay value, the i.e. cell piece less than light decay predetermined threshold value, then by light decay be determined according to light decay value first
Correspondence between value and resistivity, determines that resistivity is in resistivity threshold value in silicon chip corresponding compared with low light attenuation value cell piece
In the range of silicon chip, i.e., the maximum value and minimum value of silicon chip resistivity corresponding with the cell piece compared with low light attenuation value, then foundation
The resistivity of silicon chip determines whether cell piece prepared by the silicon chip is low light whether in the preset threshold range of the resistivity
Decline cell piece.When the resistivity of the silicon chip is in threshold range, the cell piece which prepares is low light attenuation cell piece.
The determining method of a kind of silicon chip provided in an embodiment of the present invention, by the light of the cell piece prepared according to each silicon chip
The value that declines determines that light decay value is less than the cell piece of light decay predetermined threshold value, then by the relationship between light decay value and resistivity, determines
Light decay value is less than silicon chip of the resistivity in preset threshold range in the silicon chip of predetermined threshold value, so as to by light decay value and resistivity two
Person combines, and determines that cell piece prepared by the silicon chip is low light attenuation cell piece, under the premise of light decay fluctuation is reduced, to improve
The transfer efficiency of cell piece.
Example IV
Fig. 4 is a kind of structure diagram for silicon chip determining device that the embodiment of the present invention four provides.The device is suitable for not
With the situation that the silicon chip performance of quality discrepancy is determined, the mode that software and/or hardware can be used is realized, and the device can collect
Into in data acquisition or detection device.As shown in figure 4, the device includes：Correspondence acquisition module 10, correspondence determine
Module 20 and low light attenuation piece determining module 30.
The correspondence acquisition module 10, for obtaining each position encoded and each silicon chip system of each silicon chip
The light decay value of standby cell piece and each position encoded correspondence with each silicon chip resistivity；
The correspondence determining module 20, for according to each described position encoded with the light decay value and each
The position encoded correspondence with the resistivity obtains the correspondence of the resistivity and the light decay value；
The low light attenuation piece determining module 30 for the correspondence according to the resistivity and the light decay value, determines
Cell piece prepared by the silicon chip is low light attenuation cell piece.
A kind of determining device of silicon chip provided in an embodiment of the present invention, can according to each silicon chip it is position encoded respectively with
The correspondence of the light decay value of cell piece prepared by silicon chip and the resistivity of silicon chip obtains light decay value pass corresponding with resistivity
System after cell piece prepared by the silicon chip of low light attenuation value can be determined according to light decay value, then is determined by the resistivity of silicon chip
The cell piece of resistivity qualification in the cell piece of low light attenuation value so as to reduce the difference between cell piece, reduces cell piece
Light decay fluctuation, expand process window, and then improve the production capacity and yield of cell piece, reduce the cost of cell piece.
Embodiment five
Fig. 5 is a kind of structure diagram of the determining device for silicon chip that the embodiment of the present invention five provides.The present embodiment is above-mentioned
It is optimized on the basis of embodiment, the correspondence acquisition module 10 for providing the preferred device includes：Light decay corresponds to
Relation acquisition unit 11 and resistivity correspondence acquiring unit 12.
The light decay correspondence acquiring unit 11, for the electricity prepared according to the silicon chip of different location code sample
The light decay test result of pond piece obtains the light decay value of the cell piece and each described position encoded with the light decay value
Correspondence；
The resistivity correspondence acquiring unit 12, for the test of the silicon chip resistivity encoded according to different location
As a result, obtain each position encoded correspondence with the resistivity.
Optionally, with continued reference to shown in Fig. 5, low light attenuation piece determining module 30 includes on the basis of above-described embodiment：Electricity
Resistance rate acquiring unit 31 and low light attenuation piece determination unit 32.
The resistivity acquiring unit 31 for the correspondence according to the resistivity and the light decay value, obtains institute
The resistivity threshold range of silicon chip when stating light decay value less than light decay predetermined threshold value；
The low light attenuation piece determination unit 32, for when the resistivity of the silicon chip is in resistivity threshold range, really
Cell piece prepared by the fixed silicon chip is low light attenuation cell piece.
Optionally, the position encoded first position coding including the silicon chip on silicon rod and the silicon rod are described
Second position coding on silicon ingot.
Optionally, Fig. 6 is the structure diagram of the determining device for another silicon chip that the embodiment of the present invention five provides.Such as Fig. 6
Shown, on the basis of above-described embodiment, light decay described in a kind of determining device of silicon chip provided in an embodiment of the present invention corresponds to
Relation acquisition unit 11 includes：Position encoded acquisition subelement 111, light decay result obtain subelement 112 and light decay is corresponded to and closed
System obtains subelement 113.
The position encoded acquisition subelement 111, for being encoded according to first position coding and the second position,
Obtain each position encoded of the silicon chip；
The light decay result obtains subelement 112, for obtaining each position encoded corresponding each silicon chip
The light decay test result of the cell piece of preparation；
The light decay correspondence obtains subelement 113, for according to the light decay test result, obtaining the silicon chip
The position encoded correspondence with the light decay value.
A kind of determining device of silicon chip described in the present embodiment is used to perform a kind of silicon chip described in the various embodiments described above really
Determine method, technical principle is similar with the technique effect generated, and which is not described herein again.
Note that it above are only presently preferred embodiments of the present invention and institute's application technology principle.It will be appreciated by those skilled in the art that
The present invention is not limited to specific embodiment described here, can carry out for a person skilled in the art various apparent variations,
It readjusts and substitutes without departing from protection scope of the present invention.Therefore, although being carried out by above example to the present invention
It is described in further detail, but the present invention is not limited only to above example, without departing from the inventive concept, also
It can include other more equivalent embodiments, and the scope of the present invention is determined by scope of the appended claims.
Claims (10)
1. a kind of determining method of silicon chip, which is characterized in that including：
Obtain the light decay value of each position encoded cell piece prepared with each silicon chip of each silicon chip and each described
The position encoded correspondence with each silicon chip resistivity；
It described position encoded each described position encoded is closed according to each with the light decay value and with the corresponding of the resistivity
System obtains the correspondence of the resistivity and the light decay value；
According to the correspondence of the resistivity and the light decay value, determine that cell piece prepared by the silicon chip is low light attenuation battery
Piece.
2. according to the method described in claim 1, it is characterized in that, it is described obtain each silicon chip it is position encoded with it is each described
The light decay value of cell piece prepared by silicon chip and each position encoded correspondence with each silicon chip resistivity,
Including：
According to the light decay test result of cell piece prepared by the silicon chip of different location code sample, the cell piece is obtained
Light decay value and each position encoded correspondence with the light decay value；
According to the test result for the silicon chip resistivity that different location encodes, each described position encoded and resistance is obtained
The correspondence of rate.
3. according to the method described in claim 2, it is characterized in that, it is described it is position encoded including the silicon chip on silicon rod
Second position coding of the one position encoded and described silicon rod on silicon ingot.
4. according to the method described in claim 3, it is characterized in that, it is described according to the silicon chip of different location code sample prepare
The light decay test result of cell piece obtains the light decay value of the cell piece and each described position encoded and light decay value
Correspondence, including：
According to first position coding and second position coding, each position encoded of each silicon chip is obtained；
Obtain the light decay test result of cell piece prepared by each position encoded each silicon chip；
According to the light decay test result, the correspondence of the position encoded and light decay value of the silicon chip is obtained.
5. it according to the method described in claim 1, it is characterized in that, is closed according to the resistivity is corresponding with the light decay value
System determines that cell piece prepared by the silicon chip is low light attenuation cell piece, including：
According to the correspondence of the resistivity and the light decay value, described in when obtaining the light decay value less than light decay predetermined threshold value
The resistivity threshold range of silicon chip；
When the resistivity of the silicon chip is in the resistivity threshold range, determine that the cell piece prepared by the silicon chip is
Low light attenuation cell piece.
6. a kind of determining device of silicon chip, which is characterized in that including：
Correspondence acquisition module, for obtaining each position encoded cell piece prepared with each silicon chip of each silicon chip
Light decay value and each position encoded correspondence with each silicon chip resistivity；
Correspondence determining module, for being compiled according to each described position encoded and light decay value and each position
Code and the correspondence of the resistivity obtain the correspondence of the resistivity and the light decay value；
Low light attenuation piece determining module for the correspondence according to the resistivity and the light decay value, determines the silicon chip system
Standby cell piece is low light attenuation cell piece.
7. the device described in claim 6, which is characterized in that the correspondence acquisition module includes：
Light decay correspondence acquiring unit, for the light decay of the cell piece prepared according to the silicon chip of different location code sample
Test result obtains the light decay value of the cell piece and each position encoded correspondence with the light decay value；
Resistivity correspondence acquiring unit for the test result of the silicon chip resistivity encoded according to different location, obtains
Take each position encoded correspondence with the resistivity.
8. device according to claim 7, which is characterized in that it is described it is position encoded including the silicon chip on silicon rod
Second position coding of the one position encoded and described silicon rod on silicon ingot.
9. device according to claim 8, which is characterized in that the light decay correspondence acquiring unit includes：
Position encoded acquisition subelement for being encoded according to first position coding and the second position, obtains each institute
State each position encoded of silicon chip；
Light decay result obtains subelement, for obtaining cell piece prepared by each position encoded corresponding each silicon chip
Light decay test result；
Light decay correspondence obtains subelement, for according to the light decay test result, obtain the position encoded of the silicon chip with
The correspondence of the light decay value.
10. device according to claim 6, which is characterized in that the low light attenuation piece determining module includes：
For the correspondence according to the resistivity and the light decay value, it is small to obtain the light decay value for resistivity acquiring unit
The resistivity threshold range of silicon chip when light decay predetermined threshold value；
Low light attenuation piece determination unit, it is described for when the resistivity of the silicon chip is in the resistivity threshold range, determining
Cell piece prepared by silicon chip is low light attenuation cell piece.
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