CN202380119U - Heat-insulating cage device of pseudo-single crystal silicon ingot furnace - Google Patents
Heat-insulating cage device of pseudo-single crystal silicon ingot furnace Download PDFInfo
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- CN202380119U CN202380119U CN2011204582018U CN201120458201U CN202380119U CN 202380119 U CN202380119 U CN 202380119U CN 2011204582018 U CN2011204582018 U CN 2011204582018U CN 201120458201 U CN201120458201 U CN 201120458201U CN 202380119 U CN202380119 U CN 202380119U
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- silicon ingot
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- ingot furnace
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Abstract
The utility model relates to a heat field device of a pseudo-single crystal silicon ingot furnace and particularly relates to a heat-insulating cage device for ensuring that a seed crystal is incompletely smelted in a production process of a pseudo-single crystal. The heat-insulating cage device of the pseudo-single crystal silicon ingot furnace comprises a heat-insulating cage framework; the heat-insulating cage framework is internally provided with a quartz crucible; a directional condensed block is mounted outside the bottom of the quartz crucible; fire baffling strips are arranged at two sides of the directional condensed block and the height of the top surfaces of the fire baffling strips is higher than the height of the bottom surface of the quartz crucible; and gaps are arranged among the directional condensed block and the fire baffling strips. The heat-insulating cage device of the pseudo-single crystal silicon ingot furnace, disclosed by the utility model, has the advantages that on one hand, the requirements of growing the pseudo-single crystal can be met; on other hand, the seed crystal is not completely smelted when silicon materials at the upper part of the crucible are completely smelted; and the keeping time of the state can be long enough so that the switching between a soon smelting procedure and a crystal growing procedure of the seed crystal is conveniently controlled, and the work reliability is good.
Description
Technical field
The utility model relates to a kind of quasi-monocrystalline silicon ingot furnace thermal field structure, specifically is meant in the process that quasi-monocrystalline silicon is produced, and not exclusively melts a kind of ingot furnace heat-insulation cage device of inventing for guaranteeing seed crystal.
Background technology
In whole photovoltaic industry, reduce cost, improve battery conversion efficiency is two topmost competition spots always, and present whole crystalline silicon manufacturing mainly contains two kinds of production technologies: vertical pulling method manufacture order crystal silicon, directional solidification method are produced polysilicon.
Silicon single crystal rod has characteristics such as low defective, high conversion efficiency, but this method is high to raw material and operational requirement, and single feeds intake fewly, and product cost is higher.For the boron-doping monocrystalline, because O in the monocrystalline crucible
2Introducing, make monocrystalline solar cells decay very fast.
The single charging capacity is big in the polycrystalline silicon ingot casting production process, have characteristics such as easy to operate, that cost is low, and the quartz crucible inner surface silicon nitride coating has buffer action, the silicon ingot O of gained
2Content is relatively low, and polycrystalline battery sheet attenuation ratio monocrystalline silicon piece is little a lot, but the efficiency of conversion of polycrystal silicon cell sheet is low by about 1～2% than monocrystalline silicon battery.
In order to improve the performance of polysilicon chip, all carrying out extensive studies both at home and abroad.These researchs are intended to improve the casting ingot process of polysilicon; Thereby grow the quasi-monocrystalline silicon of big crystal grain; Make it obtain the high conversion efficiency of monocrystalline silicon piece; Simultaneously keep the low decay of polysilicon chip, the advantage of high yield again, thereby produce high-quality more, solar cell flake products that performance is more stable.
Accurate monocrystalline ingot casting technology is exactly a technology of making quasi-monocrystalline silicon through the method and apparatus of ingot casting.It possesses the advantage of polycrystalline silicon ingot casting high production, high-quality, less energy-consumption, and the quasi-monocrystalline silicon crystal orientation consistence of output is high simultaneously, and crystal boundary obviously reduces, and significantly promotes battery conversion efficiency, is a kind of technology of very attractive.
The technological principle of quasi-monocrystalline silicon ingot production is to lay seed crystal through the bottom at quartz crucible, and employing is accurately sectional temperature-controlled, and seed crystal only partly melts when guaranteeing the thawing of silicon material, and directional freeze grows macrobead column monocrystalline thus then.The key point of technology is through crucible bottom temperature (being center thermocouple temperature) and well heater temperature rise rate (being the temperature-controlling thermal couple temperature rise rate) control fusing and long brilliant process.
The difficult point of above Technology is the whether not judgement of fusing fully of seed crystal.According to traditional polycrystalline silicon casting ingot process, the inner upper and lower temperature difference of crucible is less when the fusion stage, is requiring the top polycrystalline silicon material to melt when complete, the seed crystal of bottom also basically fusing finish.Therefore, be necessary to take measures, make crucible top silicon material melt the back fully and the bottom seed crystal not exclusively melts, and make sufficiently long of brilliant conversion conditions hold-time of fusing-length as far as possible, be beneficial to grow the brilliant beginning judgement on opportunity.
The utility model content
The technical problem that the utility model will solve is, to exist not enough of prior art and according to above-mentioned processing requirement, proposes a kind of quasi-monocrystalline silicon ingot furnace heat-insulation cage device, and its can satisfy the needs of quasi-monocrystalline silicon ingot growth on the one hand; When crucible top silicon material is melted fully and the bottom seed crystal not exclusively melts; And make sufficiently long of brilliant conversion conditions hold-time of fusing-length as far as possible; Thereby be beneficial to the brilliant beginning of the length judgement on opportunity, guarantee that the stable production process of quasi-monocrystalline silicon ingot is moved reliably.
The technical solution of the utility model is that a kind of quasi-monocrystalline silicon ingot furnace heat-insulation cage device comprises the heat-insulation cage skeleton; In the heat-insulation cage skeleton quartz crucible is arranged; It is characterized in that, the outer oriented solidified blocks of installing in said quartz crucible bottom, the oriented solidified blocks both sides are provided with the fiery bar of retaining; Keep off fiery bar apical side height and be higher than quartz crucible bottom surface height, gapped between oriented solidified blocks and the fiery bar of retaining.
The corner is jagged and on each breach, install warming plate around the said oriented solidified blocks upper surface.
Said oriented solidified blocks both sides installation side warming plate, bottom are installed warming plate down.
The know-why of the utility model is to be coated with Si in inciting somebody to action
3N
4The quartz crucible of coating is packed into and is positioned on the oriented solidified blocks behind the polycrystalline silicon material; Vacuumize after closing heat-insulation cage, be heated to the silicon material begin the fusing after, heat-insulation cage up is promoted to suitable height; Make the seed crystal of crucible bottom be positioned at little cavity, the top of crucible is positioned at big cavity.In the melting process, the intravital heat of high temperature in big chamber is kept off fiery bar by the bottom and oriented solidified blocks side warming plate intercepts, and can't direct radiation arrive little cavity, thereby can only get into little cavity through heat conducting mode, and heat transfer speed is slow.Simultaneously; Thereby what adopt during owing to this quasi-monocrystalline silicon ingot casting furnace superintendent crystalline substance is to promote the pattern that heat-insulation cage forms vertical temperature gradient; Cause the carbon dust airborne dust for fear of phase mutual friction between heat-insulation cage insulation quilt and the oriented solidified blocks, the bottom keeps off between fiery bar and the oriented solidified blocks must leave certain clearance.The existence of this gap can't stop all that the heat of high temperature radiation gets into little cavity, therefore, is respectively equipped with upper and lower warming plate in upper periphery, the bottom periphery of oriented solidified blocks, thereby more effectively reduces the thermal conduction of heat of high temperature through oriented solidified blocks.Like this; The seed crystal that just can guarantee to be laid on crucible bottom can not melt in the time doing than the farm labourer fully; Be after seed crystal is melted to a certain degree fast, impel seed crystal to melt needed heat and reach running balance, thereby can prolong seed crystal greatly in not fusing and the time between the fusing fully fully with the lifting heat that heat-insulation cage distributed; Be convenient to control seed crystal in the switching that is about to melt and begin long brilliant operation, reduce technology difficulty.
The requirement that seed crystal can not melt fully when satisfying the quasi-monocrystalline silicon ingot casting; On the fiery bar of the utility model bottom retaining, the oriented solidified blocks under warming plate, the oriented solidified blocks warming plate and oriented solidified blocks side warming plate all select for use high purity cured carbon felt as the heat-insulation and heat-preservation material; Simultaneously through accurately controlling the lift height of heat-insulation cage; Form accurately controlled directional long crystal thermal field of a vertical temperature gradient, make seed crystal when being about to and not melting fully, change oriented growth over to, thereby obtain accurate monocrystalline.
The judgement requirement that seed crystal can not melt fully when the utility model had both satisfied the quasi-monocrystalline silicon ingot casting; And effectively prolonged seed crystal in not fusing and the time of melting section fully fully; Convenient control seed crystal has reduced technology difficulty in the switching that is about to melt and begin long brilliant operation.
Known that by above the utility model is a kind of heat-insulation cage device that is used for the quasi-monocrystalline silicon ingot casting, it can satisfy the needs of quasi-monocrystalline silicon ingot growth on the one hand; When crucible top silicon material is melted fully and the bottom seed crystal not exclusively melts, and make this state hold-time sufficiently long, thus convenient control seed crystal in the switching that is about to melt and begin long brilliant operation, working reliability is good.
Description of drawings
Accompanying drawing is the structural representation of a kind of embodiment of the utility model;
In the accompanying drawings:
1-heat-insulation cage skeleton, the 2-well heater,
3-graphite backplate, the 4-quartz crucible,
Warming plate on the 5-oriented solidified blocks, 6-oriented solidified blocks side warming plate,
Warming plate under the 7-oriented solidified blocks, the 8-oriented solidified blocks,
The 9-bottom holding plates, the 10-column,
The fiery bar of 11-bottom retaining, 12-sidepiece warming plate,
The 13-crucible cover plate, 14-top warming plate,
The 15-lifting rod.
Embodiment
Embodiment below in conjunction with description of drawings the utility model.
Shown in accompanying drawing, said quasi-monocrystalline silicon ingot furnace heat-insulation cage device is that it has heat-insulation cage skeleton 1; In the said heat-insulation cage skeleton 1 sidepiece warming plate 12 is housed; Said heat-insulation cage skeleton 1 is supported by lifting rod 15 liftings, and top warming plate 14 is arranged at said heat-insulation cage top, and bottom holding plates 9 is arranged at the bottom.
Said sidepiece warming plate 12, top warming plate 14, bottom holding plates 9 can form the thermal field of a closure.Having heaters 2 and the oriented solidified blocks 8 that column 10 supports in the said thermal field, the quartz crucible 4 of filling the silicon material is protected by graphite backplate 3 all around and is placed on the oriented solidified blocks 8, and crucible cover plate 13 is arranged at said quartz crucible 4 tops.
Warming plate 5 on the oriented solidified blocks is placed in leaving certain gaps uncovered by the economic plan around said oriented solidified blocks 8 upper surfaces therebetween, and simultaneously, the side of oriented solidified blocks 8, bottom surface are respectively arranged with warming plate 7 under oriented solidified blocks side warming plate 6 and the oriented solidified blocks.Said heat-insulation cage bottom is provided with the fiery bar 11 of bottom retaining.
The working process of the utility model is that choosing thickness is the smooth single crystal seed piece of at least one face of 20-30mm, is coated with Si in being tiled in
3N
4The silicon material is added in quartz crucible 4 bottoms of coating on inculating crystal layer, and according to being placed on the oriented solidified blocks 8 behind the target resistivity adding doping agent.Fix warming plate 7 under warming plate 5 on the oriented solidified blocks, oriented solidified blocks side warming plate 6 and the oriented solidified blocks respectively; Vacuumize after closing the burner hearth that is combined into by sidepiece warming plate 12, bottom holding plates 9, top warming plate 14, connect well heater 2 heating, temperature-gradient method makes the silicon material fusing on top; To melting the later stage; When seed crystal began to melt, strict control heater 2 temperature were promoted to suitable height through lifting rod 15 with heat-insulation cage skeleton 1 simultaneously.Because the bottom keeps off the obstruct of fiery bar 11 and oriented solidified blocks side warming plate 6, heat of high temperature can't direct radiation to little cavity, when making seed crystal melt heat that needed heat and heat-insulation cage 1 lifting distributed to reach running balance, seed crystal no longer melts.Automatic process procedure triggers alarm finishes fusing and gets into the long brilliant stage; Heat-insulation cage 1 continues up to promote with selected speed, through the heat radiation of oriented solidified blocks 8 bottoms, makes crystalline silicon along unfused seed crystal direction stable growth; After treating that silicon crystal grows up to, obtain the quasi-monocrystalline silicon ingot through annealing, cooling.
Claims (3)
1. quasi-monocrystalline silicon ingot furnace heat-insulation cage device; Comprise heat-insulation cage skeleton (1), quartz crucible (4) is arranged in the heat-insulation cage skeleton (1), it is characterized in that; The outer oriented solidified blocks (8) of installing in said quartz crucible (4) bottom; Oriented solidified blocks (8) both sides are provided with retaining fiery bar (11), keep off fiery bar (11) apical side height and are higher than quartz crucible (4) bottom surface height, and are gapped between oriented solidified blocks (8) and the fiery bar of retaining (11).
2. according to the said quasi-monocrystalline silicon ingot furnace of claim 1 heat-insulation cage device, it is characterized in that the corner is jagged and on each breach, install warming plate (5) around said oriented solidified blocks (8) upper surface.
3. according to the said quasi-monocrystalline silicon ingot furnace of claim 1 heat-insulation cage device, it is characterized in that, said oriented solidified blocks (8) both sides installation side warming plates (6), warming plate (7) is down installed in the bottom.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011204582018U CN202380119U (en) | 2011-11-17 | 2011-11-17 | Heat-insulating cage device of pseudo-single crystal silicon ingot furnace |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011204582018U CN202380119U (en) | 2011-11-17 | 2011-11-17 | Heat-insulating cage device of pseudo-single crystal silicon ingot furnace |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202380119U true CN202380119U (en) | 2012-08-15 |
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ID=46628636
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011204582018U Expired - Lifetime CN202380119U (en) | 2011-11-17 | 2011-11-17 | Heat-insulating cage device of pseudo-single crystal silicon ingot furnace |
Country Status (1)
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| CN (1) | CN202380119U (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105200516A (en) * | 2015-09-08 | 2015-12-30 | 浙江晟辉科技有限公司 | Polycrystalline silicon ingot casting process capable of enhancing inclusion removing effect |
| CN105386123A (en) * | 2015-12-21 | 2016-03-09 | 晶科能源有限公司 | Polycrystalline ingot casting furnace and side portion thermal insulation apparatus thereof |
| CN105970283A (en) * | 2016-07-28 | 2016-09-28 | 江苏协鑫硅材料科技发展有限公司 | Ingot furnace thermal field structure and preparation technology |
| CN109112617A (en) * | 2017-06-23 | 2019-01-01 | 镇江仁德新能源科技有限公司 | A kind of directional solidification furnace and directional freeze method of solar energy polycrystalline silicon |
-
2011
- 2011-11-17 CN CN2011204582018U patent/CN202380119U/en not_active Expired - Lifetime
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105200516A (en) * | 2015-09-08 | 2015-12-30 | 浙江晟辉科技有限公司 | Polycrystalline silicon ingot casting process capable of enhancing inclusion removing effect |
| CN105386123A (en) * | 2015-12-21 | 2016-03-09 | 晶科能源有限公司 | Polycrystalline ingot casting furnace and side portion thermal insulation apparatus thereof |
| CN105970283A (en) * | 2016-07-28 | 2016-09-28 | 江苏协鑫硅材料科技发展有限公司 | Ingot furnace thermal field structure and preparation technology |
| CN109112617A (en) * | 2017-06-23 | 2019-01-01 | 镇江仁德新能源科技有限公司 | A kind of directional solidification furnace and directional freeze method of solar energy polycrystalline silicon |
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|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CX01 | Expiry of patent term |
Granted publication date: 20120815 |
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| CX01 | Expiry of patent term |