CN104404619A - Polysilicon ingot furnace and coagulation aid block external admission air cooling device thereof - Google Patents
Polysilicon ingot furnace and coagulation aid block external admission air cooling device thereof Download PDFInfo
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- CN104404619A CN104404619A CN201410712143.5A CN201410712143A CN104404619A CN 104404619 A CN104404619 A CN 104404619A CN 201410712143 A CN201410712143 A CN 201410712143A CN 104404619 A CN104404619 A CN 104404619A
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Abstract
The invention relates to a polysilicon ingot furnace and a coagulation aid block external admission air cooling device of the polysilicon ingot furnace. The air cooling device comprises a main air supply pipe (1), a valve (3), an external admission pipe (6), an internal admission pipe (8) and a coagulation aid block (10), wherein the main air supply pipe (1) is connected with the valve (3) via a first connecting pipe (2); a flowmeter (5) is arranged between the valve (3) and the external admission pipe (6); the internal admission pipe (8) is connected with the external admission pipe (6); and the internal admission pipe (8) extends into a center hole (11) of the coagulation aid block (10). Due to a unique structural design, cooling gas can be introduced into the coagulation aid block (10) to cool the coagulation aid block (10); heat dissipation capacity of the coagulation aid block (10) is improved, so that the cooling crystallization velocity of molten silicon in a crucible can be increased; orientated solidification efficiency is improved; the molten silicon achieves a considerable degree of supercooling at the same time and produces an appropriate silicon twin structure; and the quality of a polysilicon cast ingot is improved.
Description
Technical field
The present invention relates to a kind of polycrystalline silicon ingot or purifying furnace, especially relate to a kind of polycrystalline silicon ingot or purifying furnace and help grumeleuse external admission air-cooling apparatus, and described in comprising, help the polycrystalline silicon ingot or purifying furnace of grumeleuse external admission air-cooling apparatus.
Technical background
The growth of silicon crystal, generally be divided into polycrystalline cast ingot, single crystal pulling and growing by zone melting three kinds of methods, along with the large-scale application of crystalline silicon photovoltaic product, the development of solar level crystal silicon chip industry is ripe, silicon chip is as starting material, and its price, gradually in the falling of rationality, also result in the continuous compression of silicon chip manufacturer profit margin simultaneously.Improve Si wafer quality, cut down finished cost and become the problem of pendulum in face of all solar silicon wafers manufacturers.The industrial chain of crystalline silicon photovoltaic generating comprises the process from silicon material-silicon chip-battery-assembly-system, and wherein the production of silicon chip is primarily of crystal growth and crystal-cut two major parts, and crystal growth is the basic of manufacture high quality silicon chip.Crystalline silicon photovoltaic generating in, polycrystalline directional freeze due to cost low, output is large, become the mainstream technology that silicon chip is produced gradually, but due to the lattice defect that it exists, the factors such as impurity, make the efficiency of conversion of polycrystalline battery have a certain distance with single crystal battery all the time.Improve the growth method of polycrystalline cast ingot, become the Main way that current polysilicon chip improves.The difference of polycrystalline cast ingot and single crystal pulling method is, it is brilliant that pulling growth has son, follow-up seeding, the step such as isometrical is all come based on sub-crystalline substance, so crystal has certain crystal orientation, and nucleation is a process according to thermodynamics random nucleation in polycrystalline cast ingot, the structure of polycrystal silicon ingot is all not quite similar at every turn.The ability to accept of different crystal orientations to the compound ability of current carrier and impurity defect of silicon materials is different, wherein < 110 > and < 112 > of silicon twin structure due to atomic arrangement intensive, the reasons such as interfacial energy is low, impurity defect precipitates few, and the compound of current carrier is very weak, therefore minority carrier life time (i.e. carrier lifetime) is relatively high, and this part is applicable to the substrate silicon chip for making battery very much.
Wherein polycrystalline cast ingot is the growth method of typical melt solidification: polycrystalline silicon raw material is first at high temperature become melt by heat fused, then by bottom coohng, upwards directional freeze starts crystal growth, and its process of growth is relatively slow, after the growth was completed, crystal carries out annealing and is cooled to normal temperature.Research display, in order to form the silicon twin structure of suitable < 110 > and < 112 >, need to form certain condensate depression in the process of crystallization nucleation, be generally lower than between fusing point 10-100K.
At present, most of polycrystalline silicon ingot or purifying furnace starts the upgrading carrying out the expansion of ingot casting amount, when namely keeping the furnace binding of existing polycrystalline silicon ingot or purifying furnace constant, expands thermal field, is upgraded to G6, G7 type ingot by original G5 type ingot.G5, G6, G7 refer to the weight of silicon ingot respectively, and G5 refers to that this silicon ingot is made up of the little silico briquette of 5x5=25 identical weight, and analogize it, then the output of G6, G7 improves 44% than G5 respectively, 96%.By transformation, the output of ingot casting can be improved and reduce the unit cost of silicon chip, reducing every watt of cost of photovoltaic generation.But due to transformation rear furnace body size constancy, after transformation, the weight fraction of ingot be you can well imagine high by 44%, 96%, needs the also corresponding raising of thermal field bottom heat radiation ability, the heat-sinking capability of existing heat-insulation cage lift technique is utilized only to improve on a small quantity, so the setting rate in ingot casting process will be made greatly to reduce.Setting time as current G5 type ingot casting is about 25 hours, but the setting time of G6 type ingot casting reaches 40 hours, and the setting time of G7 type ingot casting is longer.So virtually add silicon chip production cost, simultaneously due in process of setting, silicon material major part is still in high temperature melting state, too increases the risk of Lou silicon.In addition, due to silicon ingot and crucible long for duration of contact, also can cause the diffuse pollution that oxygen is certain, crystal mass is declined.
Summary of the invention
The technical problem to be solved in the present invention is, overcome the above-mentioned defect that prior art exists, a kind of polycrystalline silicon ingot or purifying furnace is provided to help grumeleuse external admission air-cooling apparatus, include the polycrystalline silicon ingot or purifying furnace of this air-cooling apparatus, help the heat-sinking capability of grumeleuse strong, when carrying out polycrystalline silicon ingot casting, long brilliant speed is fast, and crystal product quality is high.
The technical scheme that the present invention solves the employing of its technical problem is: a kind of polycrystalline silicon ingot or purifying furnace helps grumeleuse external admission air-cooling apparatus, comprises main air-supply duct, valve, external admission pipe, interior inlet pipe, and described main air-supply duct is connected by the first pipe connecting with valve; Described valve is connected with external admission pipe; Described interior inlet pipe connection external admission pipe stretches into and helps in grumeleuse centre hole.
Further, in order to controlled cooling model gas flow exactly, between described valve and external admission pipe, be provided with under meter, be connected by the second pipe connecting between under meter with valve.
Further, described flow counts glass rotameter.
Further, for making interior inlet pipe be connected excellent sealing with external admission pipe, interior inlet pipe and external admission pipe junction are provided with sleeve pipe.
Further, described sleeve pipe is provided with internal thread and is connected with the outside screw of interior inlet pipe and external admission pipe respectively.
Further, described sleeve pipe is graphite sleeve.
Further, described main air-supply duct (1) is the main steam line in workshop.
Further, smooth and easy in order to make introducing help the cooling gas of grumeleuse to flow, be provided with air slot at the described grumeleuse top that helps.
Further, the width of described air slot is 20 ~ 500mm, and the degree of depth is 0.5 ~ 20mm.
Further, described valve is needle type valve.
Further, because lower furnace body is in blow-on state when passing in and out crucible, described external admission pipe is set to Stainless Steel Flexible Hose.
Further, described interior inlet pipe is carbon-carbon composites pipe or carbon tube.
The method using described polycrystalline silicon ingot or purifying furnace to help grumeleuse external admission air-cooling apparatus to help grumeleuse to cool to polycrystalline silicon ingot or purifying furnace: use rare gas element or nitrogen to make cooling gas, described cooling gas with comprise and help the thermal field component of grumeleuse to complete fluid interchange after, be directly expelled to outside stove by vacuum pump.Circulating cooling is not needed to recycle.
Described rare gas element can be helium, argon gas or nitrogen.
The present invention compared with prior art, has the following advantages:
(1) cooling gas introducing helps in grumeleuse by external admission air-cooling apparatus by the present invention, cool helping grumeleuse, improve the heat-sinking capability helping grumeleuse, thus the crystallisation by cooling speed of silicon melt in crucible can be improved, improve the efficiency of directional freeze, shorten the production cycle, reduce production cost;
(2) apply external admission air-cooling apparatus of the present invention, can form the comparatively big supercooling degree required for silicon twin growth, the quality of polycrystal silicon ingot will increase.
(3) mode owing to taking air feeding in center to cool, so the central cooling power of polycrystal silicon ingot is better than edge, can form the dimpling type interface required for ingot casting.
Accompanying drawing explanation
Fig. 1 is that polycrystalline silicon ingot or purifying furnace of the present invention helps grumeleuse external admission air-cooling apparatus structural representation;
Fig. 2 is that polycrystalline silicon ingot or purifying furnace of the present invention helps the external admission pipe of grumeleuse external admission air-cooling apparatus and interior inlet pipe syndeton schematic diagram;
Fig. 3 is the structural representation helping grumeleuse air slot that polycrystalline silicon ingot or purifying furnace of the present invention helps grumeleuse external admission air-cooling apparatus;
Fig. 4 is Fig. 3 sectional view;
Wherein: the main air-supply duct of 1-, 2-first pipe connecting, 3-valve, 4-second pipe connecting, 5-under meter, 6-external admission pipe, 7-sleeve pipe, inlet pipe in 8-, 9-lower furnace body, 10-helps grumeleuse, 11-centre hole, 12-upper furnace body, 13-air slot, the width of 14-air slot, the degree of depth of 15-air slot.
Embodiment
Below in conjunction with example, the invention will be further described.
Embodiment 1
The present embodiment comprises main air-supply duct 1, valve 3, external admission pipe 6, interior inlet pipe 8; Main air-supply duct 1 is connected by the first pipe connecting 2 with valve 3; Be provided with under meter 5 between valve 3 and external admission pipe 6, under meter 5 is glass rotameter, is connected between under meter 5 with valve 3 by the second pipe connecting 4; External admission pipe 6 is connected with interior inlet pipe 8, and interior inlet pipe 8 stretches into and helps in the centre hole 11 of grumeleuse 10.
Excellent sealing is connected with external admission pipe 6 in order to make interior inlet pipe 8, in interior inlet pipe 8, external admission pipe 6 junction is provided with sleeve pipe 7, sleeve pipe 7 is provided with internal thread and is connected with the outside screw of interior inlet pipe 8 and external admission pipe 6 respectively, and sleeve pipe 7 is graphite sleeve, as shown in Figure 2.
In order to make introducing help the cooling gas of grumeleuse 10 flow smooth and easy, helping grumeleuse 10 top to be provided with air slot 13, the width 14 of air slot 13 is 20mm, the degree of depth 15 be 20mm(as shown in Figure 3, Figure 4).
Valve 3 is needle type valve.
External admission pipe 6 is Stainless Steel Flexible Hose.
Interior inlet pipe 8 is carbon-carbon composites pipe.
During work, argon gas is used to make cooling gas; When the silicon material fusing in crucible is complete, open valve 3, under meter 5 is adjusted to 10 l/min, cooling gas argon gas stream is through external admission pipe 6, and interior inlet pipe 8, helps grumeleuse 10 centre hole 11, air slot 13, finally taken away by the vacuum pump of polycrystalline silicon ingot or purifying furnace.Such cooling gas argon gas is taken away helping the partial heat of grumeleuse 10, and the solidification rate of the silicon melt of crucible inside is improved, and then can accelerate long brilliant, improves ingot casting output, reduces the electric cost of ingot casting simultaneously.
Be transformed into G6 for the G5 of GT polycrystalline silicon ingot or purifying furnace, ingot casting weight brings up to 800 kilograms by 500 kilograms, the long chip case adopting heat-insulation cage to promote if simple, and its long brilliant time needs 40 hours, and total process time is 75 hours; And after adopting polycrystalline silicon ingot or purifying furnace of the present invention to help grumeleuse external admission air-cooling apparatus, its long brilliant time shorten to 30 hour, and total process time shorten to 65 hours.During long crystalline substance, power constant is about 60-66 kilowatt, then each ingot can be saved power consumption and be about 600-660 degree, and production efficiency improves about 13%-15%.Meanwhile, ingot casting yield about improves 1%, can voluminous silicon chip 300/ingot, in current polysilicon chip 6.5 yuan/sheet, then increases income 1950 yuan.
Embodiment 2
The difference of the present embodiment and embodiment 1 is only: the width 14 of the air slot 13 helping grumeleuse 10 top to arrange is 500mm, and the degree of depth 15 is 0.5mm; Interior inlet pipe 8 is carbon tube.Remaining with embodiment 1.
During work, helium is used to make cooling gas; When the silicon material fusing in crucible is complete, open valve 3, under meter 5 is adjusted to 12 l/min, cooling gas argon gas stream is through external admission pipe 6, and interior inlet pipe 8, helps grumeleuse 10 centre hole 11, air slot 13, finally taken away by the vacuum pump of polycrystalline silicon ingot or purifying furnace.Such cooling gas argon gas is taken away helping the partial heat of grumeleuse 10, and the solidification rate of the silicon melt of crucible inside is improved, and then can accelerate long brilliant, improves ingot casting output, reduces the electric cost of ingot casting simultaneously.
Be transformed into G6 for the G5 of GT polycrystalline silicon ingot or purifying furnace, ingot casting weight brings up to 800 kilograms by 500 kilograms, the long chip case adopting heat-insulation cage to promote if simple, and its long brilliant time needs 40 hours, and total process time is 75 hours; And after adopting polycrystalline silicon ingot or purifying furnace of the present invention to help grumeleuse external admission air-cooling apparatus, its long brilliant time shorten to 29 hour, and total process time shorten to 64 hours.During long crystalline substance, power constant is about 60-66 kilowatt, then each ingot can be saved power consumption and be about 660-726 degree, and production efficiency improves about 14%-15%.Meanwhile, ingot casting yield about improves 1.2%, can voluminous silicon chip 360/ingot, in current polysilicon chip 6.5 yuan/sheet, then increases income 2340 yuan.
Embodiment 3
The difference of the present embodiment the present embodiment and embodiment 1 is only: the width 14 of the air slot 13 helping grumeleuse 10 top to arrange is 250mm, and the degree of depth 15 is 2mm.
During work, argon gas is used to make cooling gas; When the silicon material fusing in crucible is complete, open valve 3, under meter 5 is adjusted to 9 l/min, cooling gas argon gas stream is through external admission pipe 6, and interior inlet pipe 8, helps grumeleuse 10 centre hole 11, air slot 13, finally taken away by the vacuum pump of polycrystalline silicon ingot or purifying furnace.Such cooling gas argon gas is taken away helping the partial heat of grumeleuse 10, and the solidification rate of the silicon melt of crucible inside is improved, and then can accelerate long brilliant, improves ingot casting output, reduces the electric cost of ingot casting simultaneously.
Be transformed into G6 for the G5 of GT polycrystalline silicon ingot or purifying furnace, ingot casting weight has 500 kilograms to bring up to 800 kilograms, the long chip case adopting heat-insulation cage to promote if simple, and its long brilliant time needs 40 hours, and total process time is 75 hours; And after adopting polycrystalline silicon ingot or purifying furnace of the present invention to help grumeleuse external admission air-cooling apparatus, its long brilliant time shorten to 30 hour, and total process time shorten to 65 hours.During long crystalline substance, power constant is about 60-66 kilowatt, then each ingot can be saved power consumption and be about 600-660 degree, and production efficiency improves about 13%-15%.Meanwhile, ingot casting yield about improves 1%, can voluminous silicon chip 300/ingot, in current polysilicon chip 6.5 yuan/sheet, then increases income 1950 yuan.
The above is only preferred embodiment of the present invention, not imposes any restrictions the present invention, every above embodiment is done according to the technology of the present invention essence any amendment, change and equivalent structure transformation, all still belong to the protection domain of technical solution of the present invention.
Claims (10)
1. polycrystalline silicon ingot or purifying furnace helps a grumeleuse external admission air-cooling apparatus, comprises main air-supply duct (1), valve (3), external admission pipe (6), and interior inlet pipe (8) helps grumeleuse (10); Described main air-supply duct (1) is connected by the first pipe connecting (2) with valve (3); Described valve (3) is connected with external admission pipe (6); Described interior inlet pipe (8) is connected with external admission pipe (6), and interior inlet pipe (8) stretches into and helps in grumeleuse (10) centre hole (11).
2. ingot furnace according to claim 1 helps grumeleuse external admission air-cooling apparatus, it is characterized in that: between described valve (3) and external admission pipe (6), be provided with under meter (5), be connected by the second pipe connecting (4) between described under meter (5) with valve (3).
3. polycrystalline silicon ingot or purifying furnace according to claim 1 helps grumeleuse external admission air-cooling apparatus, it is characterized in that: described interior inlet pipe (8) and external admission pipe (6) junction are provided with sleeve pipe (7).
4. polycrystalline silicon ingot or purifying furnace according to claim 1 helps grumeleuse external admission air-cooling apparatus, it is characterized in that: described in help grumeleuse (10) top to be provided with air slot (13).
5. the polycrystalline silicon ingot or purifying furnace according to any claim of Claims 1-4 helps grumeleuse external admission air-cooling apparatus, it is characterized in that: described valve (3) is needle type valve.
6. the polycrystalline silicon ingot or purifying furnace according to any claim of Claims 1-4 helps grumeleuse external admission air-cooling apparatus, it is characterized in that: described external admission pipe (6) is Stainless Steel Flexible Hose.
7. the polycrystalline silicon ingot or purifying furnace according to any claim of Claims 1-4 helps grumeleuse external admission air-cooling apparatus, it is characterized in that: described main air-supply duct (1) is the main steam line in workshop.
8. polycrystalline silicon ingot or purifying furnace according to claim 4 helps grumeleuse external admission air-cooling apparatus, it is characterized in that: the width (14) of described air slot (13) is 20 ~ 500mm, and the degree of depth (15) is 0.5 ~ 20mm.
9. a polycrystalline silicon ingot or purifying furnace, comprises lower furnace body (9), and upper furnace body (12), is characterized in that: the polycrystalline silicon ingot or purifying furnace had described in any claim of claim 1 to 8 helps grumeleuse external admission air-cooling apparatus.
10. the method using the described polycrystalline silicon ingot or purifying furnace of one of claim 1 to 8 to help grumeleuse external admission air-cooling apparatus to help grumeleuse to cool to polycrystalline silicon ingot or purifying furnace, it is characterized in that, rare gas element or nitrogen is used to make cooling gas, described cooling gas with comprise and help the thermal field component of grumeleuse to complete fluid interchange after, be directly expelled to outside stove by vacuum pump.
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| CN2014104030805 | 2014-08-18 | ||
| CN201410712143.5A CN104404619A (en) | 2014-08-18 | 2014-12-02 | Polysilicon ingot furnace and coagulation aid block external admission air cooling device thereof |
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Cited By (2)
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| CN107059118A (en) * | 2017-04-23 | 2017-08-18 | 连云港清友新能源科技有限公司 | Cooling device for the polycrystalline ingot furnace of oversize silicon ingot |
| CN107723793A (en) * | 2017-11-21 | 2018-02-23 | 浙江师范大学 | Crucible bottom heat conducting device and method for high quality polycrystalline silicon growth |
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