CN101906657A - System for manufacturing single crystal ingot - Google Patents
System for manufacturing single crystal ingot Download PDFInfo
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- CN101906657A CN101906657A CN 201010228244 CN201010228244A CN101906657A CN 101906657 A CN101906657 A CN 101906657A CN 201010228244 CN201010228244 CN 201010228244 CN 201010228244 A CN201010228244 A CN 201010228244A CN 101906657 A CN101906657 A CN 101906657A
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Abstract
The invention discloses a system for manufacturing a single crystal ingot, which comprises an upper furnace body, a lower furnace body, a crucible, at least one heater, a crucible support, a heat insulation part and a temperature control unit, wherein the lower furnace body is matched with the upper furnace body to form a furnace body space; the crucible is arranged in the furnace body space and is used for accommodating seed crystals and feeding; the crucible support is used for supporting the crucible; and the temperature control unit is arranged below the crucible support and is used for controlling the temperature at the position where the crucible accommodates the seed crystals. According to the system, controlled temperature gradient can be formed at the bottom periphery of the crucible, so that the cooling of the seed crystals is controlled in the process of directional solidification, the seed crystals are prevented from being molten completely in the process of forming single crystals, and the single crystal ingot is obtained in low cost by utilizing the system.
Description
Technical field
The present invention relates to the manufacturing process of single crystal rod, especially relate to a kind of system that makes single crystal rod by directional freeze.
Background technology
Sun power is a kind of reproducible green energy resource.Utilize the light transfer characteristic of semiconductor material to prepare solar cell, sun power can be transformed into electric energy.Since first monocrystaline silicon solar cell in 1954 was born, solar battery technology and industry had obtained great development.Silicon solar cell, especially crystal silicon solar energy battery efficiency of conversion height and cost are low and become optimal battery kind, occupy most of market share of solar cell.
Crystal silicon cell is divided into two kinds of silicon single crystal and polycrystal silicon cells.At present, the efficiency of conversion of monocrystaline silicon solar cell is higher approximately by 2% than polycrystal silicon cell, and the manufacturing cost of monocrystalline silicon piece is higher more than 10% than polysilicon chip, and major cause is that the cost of silicon single crystal ingot is more much higher than the cost of polycrystal silicon ingot.In most cases, use vertical pulling method growing silicon single crystal ingot in single crystal growing furnace at present, with directional solidification method grown silicon polycrystalline ingot in ingot furnace, the cost for preparing silicon single crystal ingot with vertical pulling method prepares the policrystalline silicon ingot than directional solidification method and exceeds more than 20%.Therefore, the method of prior art and/or system, prepare silicon single crystal ingot and obtain high battery conversion efficiency with the high vertical pulling method of cost, prepare the policrystalline silicon ingot and the battery conversion efficiency that obtains is also low with the low directional solidification method of cost, can not between the lower crystal preparation method of the silicon single-crystal solar battery sheet that high conversion efficiency more is provided and cost, obtain equilibrium.
Summary of the invention
In view of this, need provide a kind of system of new manufacturing silicon single crystal ingot, described system can form controlled thermograde by the bottom periphery at crucible and guarantee to prepare single crystal rod in the directional freeze system, under lower cost, obtains single crystal rod.
The embodiment of the invention has proposed a kind of system that makes single crystal rod on the one hand, and described system can comprise: upper furnace body; Lower furnace body, described lower furnace body match with described upper furnace body to form furnace space; Crucible, described crucible are arranged in the furnace space and are configured to hold seed crystal and feed; At least one well heater, described well heater are used for heating also the described seed crystal of partial melting at least, and melt the feed that is contained in the crucible fully; The crucible bearing is used for described crucible is supported; Heat insulating member, described heat insulating member are contained in the described furnace space and are configured to removable up and down with respect to described crucible; And temperature control unit, described temperature control unit is arranged under the described crucible bearing, is used to control the temperature of the described bushing position at the seed crystal place that holds.
Thus, by temperature control unit of the present invention, can form controlled thermograde at the bottom periphery of crucible, thereby guarantee the cooling of the described seed crystal of control in the process of directional freeze, guarantee in the crystal formation process, to prevent that seed crystal is completely melted, and utilize this system to obtain single crystal rod originally with lower one-tenth.
According to one embodiment of present invention, described temperature control unit comprises: gas duct, and an end of described gas duct is arranged near the bottom center of described crucible bearing, and another termination of described gas duct is provided for the refrigerative source of the gas.
In this embodiment of the present invention, by this gas duct and the speed that is controlled at mobile gas in the gas duct, thereby can easily realize control to the temperature field of described crucible bottom, thereby guaranteeing to obtain single crystal rod under the situation that seed crystal is not completely melted and feed melts fully.
According to one embodiment of present invention, the bottom of described at least crucible bearing is formed with radiating groove, and the top and the quartz crucible of described radiating groove are adjacent, and described gas duct is inserted in the described radiating groove.
According to one embodiment of present invention, the flow rate control that flows into the described gas of described temperature control unit becomes to prevent that seed crystal is by fusion fully in the complete melting process of feed.
According to one embodiment of present invention, in single crystal rod directional freeze process, flow into the flow velocity Be Controlled of the described gas of described temperature control unit, to promote from the directional freeze of the single crystal rod of described seed crystal.
According to one embodiment of present invention, described radiating groove forms any one in cone, cone table, rectangular parallelepiped, the right cylinder.
According to one embodiment of present invention, the center of described crucible bearing is provided with replaceable module, and described radiating groove is formed on the described replaceable module.
According to one embodiment of present invention, on the sidewall of described radiating groove, be provided with adiabator layer.
According to one embodiment of present invention, on the upper surface of described crucible bearing and/or lower surface, be provided with adiabator layer.
According to one embodiment of present invention, the position relative with described gas duct is provided with first air inlet port on the described lower furnace body.
According to one embodiment of present invention, with N
2, Ar, He or its mixed gas be supplied to described gas duct by first air inlet port.
According to one embodiment of present invention, the top of described upper furnace body is provided with second inlet mouth, and described second inlet mouth is connected with second gas circuit with first gas circuit respectively, and described first gas circuit is used for feeding Ar, N to quartz crucible
2Perhaps its mixed gas;
Described gas duct is connected with described second gas circuit, is used for feeding N to described gas duct
2, Ar, He or its mixed gas.
According to one embodiment of present invention, described temperature control unit also comprises: the air-flow guiding piece, and the bottom surface of described air-flow guiding piece and described crucible bearing is oppositely arranged, and described gas duct penetrates described air-flow guiding piece.
According to one embodiment of present invention, the crucible retainer, described crucible retainer is used to keep described crucible to prevent its distortion, and is arranged on the described crucible bearing.
According to one embodiment of present invention, the bottom of described crucible retainer is formed with the cooling tank corresponding with described radiating groove, and described radiating groove runs through the bottom surface that described crucible bearing directly imports to described air-flow described crucible retainer.
Thus, in the above embodiment of the present invention, by temperature control unit is set, and the physical construction feature on the improvement crucible bearing, thereby can on traditional single crystal growing furnace, make single crystal rod, both reduced traditional manufacturing single crystal rod cost, made full use of existing equipment, improved the efficient of making single crystal rod simultaneously.
Additional aspect of the present invention and advantage part in the following description provide, and part will become obviously from the following description, or recognize by practice of the present invention.
Description of drawings
Above-mentioned and/or additional aspect of the present invention and advantage are from obviously and easily understanding becoming the description of embodiment below in conjunction with accompanying drawing, wherein:
Fig. 1 has shown the structural representation of the system of manufacturing single crystal rod according to an embodiment of the invention, and wherein crucible accommodates feed to be melted and seed crystal;
Fig. 2 has shown the structural representation of the system of manufacturing single crystal rod according to another preferred embodiment, and wherein crucible accommodates the feed that melted and the seed crystal of partial melting;
Fig. 3 has shown the enlarged diagram of first embodiment of part A among Fig. 2;
Fig. 4 has shown the structural representation of the system of manufacturing single crystal rod according to an embodiment of the invention, and wherein crucible accommodates the feed that melted and the seed crystal of partial melting;
Fig. 5 has shown the enlarged diagram of second embodiment of part A among Fig. 2;
Fig. 6 has shown the enlarged diagram of the 3rd embodiment of part A among Fig. 2;
Fig. 7 has shown the enlarged diagram of the 4th embodiment of part A among Fig. 2;
Fig. 8 has shown the enlarged diagram of the 5th embodiment of part A among Fig. 2;
Fig. 9 has shown the enlarged diagram of the 6th embodiment of part A among Fig. 2;
Figure 10 has shown the enlarged diagram of the 7th embodiment of part A among Fig. 2;
Figure 11 has shown the enlarged diagram of the 8th embodiment of part A among Fig. 2;
Figure 12 has shown the enlarged diagram of the 9th embodiment of part A among Fig. 2;
Figure 13 has shown the enlarged diagram of the tenth embodiment of part A among Fig. 2; And
Figure 14 has shown the gas circuit structure synoptic diagram of the system of manufacturing single crystal rod according to an embodiment of the invention.
Embodiment
Describe embodiments of the invention below in detail, the example of described embodiment is shown in the drawings, and wherein identical from start to finish or similar label is represented identical or similar elements or the element with identical or similar functions.Below by the embodiment that is described with reference to the drawings is exemplary, only is used to explain the present invention, and can not be interpreted as limitation of the present invention.
The present invention relates to the system and method for growing single-crystal material.Although the manufacturing of silicon single crystal has been discussed in following specification sheets, technology described herein and method are not limited to the manufacturing system or the method for silicon single crystal ingot.A plurality of monocrystal materials can use system of the present invention or method to make multiple monocrystal material (for example Ge, GaAs etc.), oxide compound (for example sapphire, YAG etc.) or fluorochemical (MgF for example
2, CaF
2) etc.
Describe the system 100 that makes single crystal rod according to an embodiment of the invention below with reference to accompanying drawings in detail, wherein Fig. 1 has shown the structural representation of the system 100 of manufacturing single crystal rod according to an embodiment of the invention, and wherein crucible 1 accommodates feed to be melted 9 and seed crystal 10; Fig. 2 has shown the structural representation of the system 100 of manufacturing single crystal rod according to another preferred embodiment, and wherein crucible 1 accommodates the feed 9 that melted and the seed crystal 10 of partial melting; Fig. 3 has shown the enlarged diagram of first embodiment of part A among Fig. 2.
As shown in fig. 1, the system 100 of this manufacturing single crystal rod comprises: upper furnace body 101; Lower furnace body 102, described lower furnace body 102 match with described upper furnace body 101 to form furnace space 104; Crucible 1, described crucible 1 are arranged in the furnace space 104 and are configured to hold seed crystal 10 and feed 9; At least one well heater, described well heater are used for heating also the described seed crystal 10 of partial melting at least, and melt the feed 9 that is contained in the crucible 1 fully; Crucible bearing 6 is used for described crucible 1 is supported; Heat insulating member, described heat insulating member are contained in the described furnace space 104 and are configured to removable about in the of 1 with respect to described crucible; And temperature control unit, described temperature control unit is arranged under the described crucible bearing 6, is used to control the temperature of the described bushing position at seed crystal 10 places that hold.
Thus, by temperature control unit of the present invention, can form controlled temperature gradient field at the bottom periphery of crucible 1, thereby guarantee the cooling of the described seed crystal 10 of control in the process of directional freeze, guarantee in the crystal formation process, to prevent that seed crystal 10 is completely melted, and utilize this system to obtain single crystal rod originally with lower one-tenth.
According to one embodiment of present invention, described temperature control unit can form and comprise: gas duct 8, one end of described gas duct 8 is arranged near the bottom center of described crucible bearing 6, the other end of described gas duct 8 can be provided for the refrigerative source of the gas and be connected.
In this embodiment of the present invention, by this gas duct 8 and the speed that is controlled at mobile gas in the gas duct 8, thereby can easily realize control to the temperature field of described crucible 1 bottom, thereby guaranteeing to obtain single crystal rod under the situation that seed crystal 10 is not completely melted and feed 9 melts fully.
In according to one embodiment of present invention, described crucible 1 can need to have required shape, and is not limited to square, cylindrical, taper etc.In the present invention,, adopt the quadrate crucible, but need to prove for the purpose of example, herein only for purposes of illustration, rather than in order to limit protection scope of the present invention.Described crucible 1 can be kept by crucible retainer 5, as shown in fig. 1.Described crucible retainer 5 can comprise retaining plate 51,52 and 53.Described retaining plate 51,52 and 53 can be formed by graphite cake.In according to one embodiment of present invention, described at least one well heater comprises: top heater 31, side well heater 32.Described top heater 31, side well heater 32 cover described crucible 1 when work, be placed on wherein feed with fusing.After upper furnace body 101 and lower furnace body 102 closures, described top heater 31 and sidewall well heater 32 cover above the reaching all around of described crucible 1.
According to one embodiment of present invention, described lower furnace body 102 is vertically removable with respect to described upper furnace body 101, thereby can utilize fork truck etc. to put into and take out crucible 1 easily.
According to one embodiment of present invention, this system 100 can also comprise the heat shielding 2 that is arranged between crucible 1 and the top heater 31, the center of this heat shielding 2 has gas entrance hole 21, can be provided with a plurality of fixed part (not shown) that interfix with retaining plate 51,52 and 53 around the heat shielding 2.Heat shielding 2 can stop the volatile matter of silicon melt directly to deposit on the top heater 31 and other adiabator layers of crucible 1 top, gas entrance hole 21 by heat shielding 2 centers can also import to the rare gas element of for example argon gas (Ar) etc. the silicon melt surface in the crucible 1, and a plurality of air outlet openings outflows that are provided with around the top by quartz crucible 1, thereby can take away various volatile matters by described rare gas element.
According to one embodiment of present invention, heat insulating member can form heat-insulation cage 4, when upper furnace body 101 and lower furnace body 102 closures, make top heater 31 and sidewall well heater 32 be loaded into crucible 1 around, and heat-insulation cage 4 entangles quartz crucible 1 to prevent the heat outflow in changing the process of material.In the process of the directional freeze after the feed of crucible 1 fusing is incubated, can upwards promote described heat-insulation cage 4 lentamente, keeping the temperature of not solidified liquid-state silicon material, and control the directional freeze of the interior single crystal rod of described crucible 1.
According to one embodiment of present invention, described heat exchange unit can also comprise gas duct 8 and with described gas duct 8 vertically disposed air-flow guiding pieces 7, described air-flow guiding piece 7 is oppositely arranged with the bottom surface of described crucible 1 support; Described gas duct 8 passes the adjacent setting in bottom surface of described air-flow guiding piece 7 and an end and described crucible 1 support, another termination source of the gas of gas duct 8.By this air-flow guiding piece 7, thereby improve temperature gradient distribution under the crucible 1 effectively, thereby improved the quality of single crystal rod in the directional freeze process.
Make in the process of single crystal rod in the system that utilizes existing manufacturing polycrystalline ingot, a problem that is very difficult to solve is to prevent the fusing fully of seed crystal, this is because change in crucible in the process of material, temperature is enough high, thereby make the seed crystal of putting into wherein also be completely melted, thereby necessary seed crystal crystal seed in the crystal formation process can't be provided in the process that feed melts completely.
The present inventor finds in the process of research, can hold in the process of being implemented in of temperature material at seed crystal place cooling by the control crucible bottom to seed crystal, seed crystal is not completely melted, thereby the seed crystal crystal seed can be provided for next step crystal growth, and finish the technological process of making single crystal rod.
In order better to play cooling performance, as shown in Figure 5, in one embodiment of the invention, bottom at crucible 1 support is formed with radiating groove 61, the top of radiating groove 61 can be adjacent with quartz crucible 1, and gas duct 8 can be inserted in the radiating groove 61, thereby can be with the more direct central position that is blown into crucible bottom of air-flow, thereby can play the purpose of the seed crystal of cooling crucible center position, as shown in Fig. 2,4.
In order to prevent that seed crystal from melting fully, and reduce the influence of cooling to silicon material fusing around the seed crystal 10 as far as possible, the center that needs to concentrate cooling seed crystal 10, the shape of radiating groove 61 is very important.
With reference to Fig. 3,5-13 the structure of radiating groove 61 is according to an embodiment of the invention described below.
Fig. 3 has shown the enlarged diagram of first embodiment of part A among Fig. 2, has wherein shown the structural representation of crucible bearing 6.Wherein said radiating groove 61 forms truncated cone, and gas duct 8 is inserted in the described radiating groove 61, and the outlet of gas duct 8 is positioned in close proximity to the bottom of the described frustum of a cone, to strengthen the cooling to the crucible 1 of this position.According to one embodiment of present invention, the flow rate control that flows into the gas in the described gas duct 8 becomes to prevent that seed crystal 10 is by complete fusions in feed 9 complete melting processes.According to one embodiment of present invention, in single crystal rod directional freeze process, the flow velocity that flows into the described gas of described gas duct 8 is controlled to increase, to promote from the directional freeze of the single crystal rod of described seed crystal 10.
Fig. 5 has shown the enlarged diagram of second embodiment of part A among Fig. 2, has wherein shown the structural representation of crucible bearing 106.Wherein said radiating groove 161 forms cone shape, and the top of cone is positioned at the upper surface of described crucible bearing 1.Gas duct 8 is inserted in the described radiating groove 161, and the outlet of gas duct 8 is positioned in close proximity to the tip of described cone, to strengthen the cooling to the crucible 1 of this position.According to one embodiment of present invention, the flow rate control that flows into the gas in the described gas duct 8 becomes to prevent that seed crystal 10 is by complete fusions in feed 9 complete melting processes.According to one embodiment of present invention, in single crystal rod directional freeze process, flow into the flow velocity Be Controlled of the described gas of described gas duct 8, to promote from the directional freeze of the single crystal rod of described seed crystal 10.
Fig. 6 has shown the enlarged diagram of the 3rd embodiment of part A among Fig. 2, has wherein shown the structural representation of crucible bearing 206.Wherein said radiating groove 261 forms cone shape, and the top of cone is in close proximity to the upper surface of described crucible bearing 1.Gas duct 8 is inserted in the described radiating groove 261, and the outlet of gas duct 8 is positioned in close proximity to the tip of described cone, to strengthen the cooling to the crucible 1 of this position.According to one embodiment of present invention, the flow rate control that flows into the gas in the described gas duct 8 becomes to prevent that seed crystal 10 is by complete fusions in feed 9 complete melting processes.According to one embodiment of present invention, in single crystal rod directional freeze process, the flow velocity that flows into the described gas of described gas duct 8 is controlled to increase, to promote from the directional freeze of the single crystal rod of described seed crystal 10.
Fig. 7 has shown the enlarged diagram of the 4th embodiment of part A among Fig. 2, has wherein shown the structural representation of crucible bearing 306.Wherein said radiating groove 361 forms truncated cone, and the top of the frustum of a cone is positioned at the upper surface of described crucible bearing 1.Gas duct 8 is inserted in the described radiating groove 161, and the outlet of gas duct 8 is positioned in close proximity to the top of the described frustum of a cone, to strengthen the cooling to the crucible 1 of this position.According to one embodiment of present invention, the flow rate control that flows into the gas in the described gas duct 8 becomes to prevent that seed crystal 10 is by complete fusions in feed 9 complete melting processes.According to one embodiment of present invention, in single crystal rod directional freeze process, the flow velocity that flows into the described gas of described gas duct 8 is controlled to increase, to promote from the directional freeze of the single crystal rod of described seed crystal 10.
Fig. 8 has shown the enlarged diagram of the 5th embodiment of part A among Fig. 2; Fig. 9 has shown the enlarged diagram of the 6th embodiment of part A among Fig. 2.To above-mentioned similar, described radiating groove 461,561 forms the cylinder bodily form respectively, and the top of cone is positioned at or is in close proximity to the upper surface of described crucible bearing 1, to strengthen the cooling to the crucible 1 of this position.According to one embodiment of present invention, the flow rate control that flows into the gas in the described gas duct 8 becomes to prevent that seed crystal 10 is by complete fusions in feed 9 complete melting processes.According to one embodiment of present invention, in single crystal rod directional freeze process, the flow velocity that flows into the described gas of described gas duct 8 is controlled to increase, to promote from the directional freeze of the single crystal rod of described seed crystal 10.
Need to prove that described radiating groove 461,561 also can form rectangular parallelepiped and form, above-mentioned different shape is the purpose for this radiating groove of explanation, rather than in order to limit the invention to above-mentioned structure.
According to one embodiment of present invention, the center of described crucible bearing 6 can be provided with replaceable module, and described radiating groove 61 can be formed on the described replaceable module, thereby increases the facilitating property of shape of changing radiating groove 61.
As mentioned above, described radiating groove 61 can run through described crucible bearing 6 and described air-flow directly be imported to the bottom surface of crucible 1.
In addition, Fig. 4 has shown the structural representation of the system of manufacturing single crystal rod according to an embodiment of the invention, and wherein crucible accommodates the feed that melted and the seed crystal of partial melting.According to one embodiment of present invention, the flow velocity that can be further flows into the gas in the gas duct 8 by control is controlled the strong cooling to the bottom position of the crucible of described placement seed crystal.
Figure 10 has shown the enlarged diagram of the 7th embodiment of part A among Fig. 2, and as shown in Figure 10, the sidewall of described radiating groove 61 is provided with adiabator layer 62.By this adiabator layer 62 is set, thereby the tip position place that only can be positioned at radiating groove by the gas that gas duct 8 imports provides strong cooling, and can not cause undercooling to the feed around the seed crystal, guarantee feed around the seed crystal in changing the material process melts fully and seed crystal not exclusively melts, and further optimizes the manufacturing process of single crystal rod.
Figure 11 has shown the enlarged diagram of the 8th embodiment of part A among Fig. 2, wherein is provided with adiabator layer 63 on the upper surface of described crucible bearing 6 and/or lower surface; Figure 12 has shown the enlarged diagram of the 9th embodiment of part A among Fig. 2, wherein is provided with adiabator layer 64 on the lower surface of described crucible bearing 6.Figure 13 has shown the enlarged diagram of the tenth embodiment of part A among Fig. 2, wherein is respectively equipped with adiabator layer 63,64 on the upper surface of described crucible bearing 6 and lower surface.Described adiabator layer 63,64 is respectively applied for and prevents feed by undercooling, thereby causes the disadvantageous effect to the feed melting process.
According to one embodiment of present invention; described adiabator layer 62,63,64 can be respectively forms just like the material of charcoal felt; and this adiabator layer 62 can be formed on the sidewall as radiating groove 61 as described in arbitrary among Fig. 3-9, and is above-mentioned thus just for exemplary purposes rather than in order to limit protection scope of the present invention.
Describe the gas circuit that is used to make the system 100 of single crystal rod according to the present invention with reference to Figure 14 below and distribute, wherein Figure 14 has shown the gas circuit structure synoptic diagram of the system 100 of manufacturing single crystal rod according to an embodiment of the invention.
According to one embodiment of present invention, the position relative with described gas duct 8 is provided with first air inlet port 1021 on the described lower furnace body 102.According to one embodiment of present invention, with N
2, Ar, He or its mixed gas be supplied to described gas duct 8 by first air inlet port 1021.
Alternatively, an air inlet port can be set respectively on lower furnace body on the body of heater, as shown in figure 14, second air inlet port is set on upper furnace body 101, this second air inlet port enters in the heat-insulation cage 4 by first gas circuit 11, and pass heat shielding 2 with the surface of Ar air-blowing to melt, simultaneously the position relative with described gas duct 8 is provided with first air inlet port 1021 on the lower furnace body 102.In another embodiment of the present invention, an air inlet port can only be provided on body of heater, also as shown in figure 10, the top of described upper furnace body 101 is provided with second inlet mouth 1011, described second inlet mouth 1011 is connected with second gas circuit 12 with first gas circuit 11 respectively, described first gas circuit 11 is used for to crucible 1 by rare gas elementes such as Ar gas, described gas duct 8 is connected with described the 3rd gas circuit 13, wherein said second gas circuit 12 is connected with the 3rd gas circuit 13 by gas interface 14, is used for feeding rare gas element to described gas duct 8.Need to prove, the present invention's purpose for simplicity, in Figure 10, show this two kinds of plenum systems simultaneously, but it will be appreciated by those skilled in the art that this dual mode realizes respectively, and those skilled in the art also can make modification or the variation that is equal to these two embodiment, for example only in the bottom of body of heater an air inlet port etc. are set.In the above-described embodiments, not only Ar can be fed, also N can be fed
2, gas such as He, the perhaps mixed gas of these gases.
Thus, in the above embodiment of the present invention, by temperature control unit is set, and the physical construction feature on the improvement crucible bearing, thereby can on traditional single crystal growing furnace, make single crystal rod, both reduced traditional manufacturing single crystal rod cost, made full use of existing equipment, improved the efficient of making single crystal rod simultaneously.
Any mentioning " embodiment ", " embodiment ", " illustrative examples " etc. mean concrete member, structure or the characteristics described in conjunction with this embodiment and are contained among at least one embodiment of the present invention.Not necessarily refer to identical embodiment in this schematic statement everywhere of this specification sheets.And when describing concrete member, structure or characteristics in conjunction with any embodiment, what advocated is, realizes that in conjunction with other embodiment such member, structure or characteristics all drop within those skilled in the art's the scope.
Although the specific embodiment of the present invention is described in detail with reference to a plurality of illustrative examples of the present invention, but it must be understood that, those skilled in the art can design multiple other improvement and embodiment, and these improve and embodiment will drop within the spirit and scope.Particularly, within the scope of aforementioned open, accompanying drawing and claim, can make rational modification and improvement aspect the layout of component and/or subordinate composite configuration, and can not break away from spirit of the present invention.Except the modification and the improvement of component and/or layout aspect, its scope is limited by claims and equivalent thereof.
Claims (15)
1. system that makes single crystal rod comprises:
Upper furnace body;
Lower furnace body, described lower furnace body match with described upper furnace body to form furnace space;
Crucible, described crucible are arranged in the furnace space and are configured to hold seed crystal and feed;
At least one well heater, described well heater are used for heating also the described seed crystal of partial melting at least, and melt the feed that is contained in the crucible fully;
The crucible bearing is used for described crucible is supported;
Heat insulating member, described heat insulating member are contained in the described furnace space and are configured to removable up and down with respect to described crucible; And
Temperature control unit, described temperature control unit are arranged under the described crucible bearing, are used to control the temperature of the described bushing position at the seed crystal place that holds.
2. system according to claim 1 is characterized in that, described temperature control unit comprises:
Gas duct, an end of described gas duct is arranged near the bottom center of described crucible bearing, and another termination of described gas duct is provided for the refrigerative source of the gas.
3. system according to claim 1 is characterized in that the bottom of described at least crucible bearing is formed with radiating groove, and the top and the quartz crucible of described radiating groove are adjacent, and described gas duct is inserted in the described radiating groove.
4. system according to claim 1 is characterized in that, the flow rate control that flows into the described gas of described temperature control unit becomes to prevent that seed crystal is completely melted in the complete melting process of feed.
5. system according to claim 4 is characterized in that, in single crystal rod directional freeze process, flows into the flow velocity Be Controlled of the described gas of described temperature control unit, to promote from the directional freeze of the single crystal rod of described seed crystal.
6. system according to claim 3 is characterized in that described radiating groove forms any one in cone, cone table, rectangular parallelepiped, the right cylinder.
7. system according to claim 6 is characterized in that the center of described crucible bearing is provided with replaceable module, and described radiating groove is formed on the described replaceable module.
8. system according to claim 6 is characterized in that, is provided with adiabator layer on the sidewall of described radiating groove.
9. system according to claim 6 is characterized in that, is provided with adiabator layer on the upper surface of described crucible bearing and/or lower surface.
10. system according to claim 2 is characterized in that, position relative with described gas duct on the described lower furnace body is provided with first air inlet port.
11. system according to claim 10 is characterized in that, with N
2, Ar, He or its mixed gas be supplied to described gas duct by first air inlet port.
12. system according to claim 2 is characterized in that, the top of described upper furnace body is provided with second inlet mouth, and described second inlet mouth is connected with second gas circuit with first gas circuit respectively, and described first gas circuit is used for feeding Ar, N to quartz crucible
2Perhaps its mixed gas;
Described gas duct is connected with described second gas circuit, is used for feeding N to described gas duct
2, Ar, He or its mixed gas.
13. system according to claim 2 is characterized in that, described temperature control unit also comprises:
The air-flow guiding piece, the bottom surface of described air-flow guiding piece and described crucible bearing is oppositely arranged, and described gas duct penetrates described air-flow guiding piece.
14. system according to claim 4 further comprises: the crucible retainer, described crucible retainer is used to keep described crucible to prevent its distortion, and is arranged on the described crucible bearing.
15. system according to claim 14, it is characterized in that, the bottom of described crucible retainer is formed with the cooling tank corresponding with described radiating groove, and described radiating groove runs through the bottom surface that described crucible bearing directly imports to described air-flow described crucible retainer.
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Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102286775A (en) * | 2011-08-27 | 2011-12-21 | 宁夏日晶新能源装备股份有限公司 | Single crystal furnace capable of realizing fast material change and fast material change method of single crystal furnace |
| CN102433585A (en) * | 2011-12-08 | 2012-05-02 | 浙江绿谷光伏科技有限公司 | Thermal field structure of quasi-monocrystal ingot furnace |
| CN102703968A (en) * | 2012-06-05 | 2012-10-03 | 湖南红太阳光电科技有限公司 | Method and device for controlling seed crystal melting degree through gas flow in single crystal casting process |
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| CN102433585B (en) * | 2011-12-08 | 2014-01-29 | 浙江绿谷光伏科技有限公司 | Thermal field structure of quasi-monocrystal ingot furnace |
| CN103225110B (en) * | 2012-01-29 | 2016-07-06 | 北京京运通科技股份有限公司 | A kind of method producing monocrystal silicon |
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| CN102703968B (en) * | 2012-06-05 | 2015-02-04 | 湖南红太阳光电科技有限公司 | Method and device for controlling seed crystal melting degree through gas flow in single crystal casting process |
| CN102703968A (en) * | 2012-06-05 | 2012-10-03 | 湖南红太阳光电科技有限公司 | Method and device for controlling seed crystal melting degree through gas flow in single crystal casting process |
| CN102766901B (en) * | 2012-08-20 | 2015-09-30 | 元亮科技有限公司 | The device and method of real-time, tunable Growth by Temperature Gradient Technique large size high temperature crystal |
| CN102766901A (en) * | 2012-08-20 | 2012-11-07 | 元亮科技有限公司 | Device for growing large-size and high-temperature crystals with real-time adjustable temperature gradient method and method |
| CN103628127A (en) * | 2013-11-26 | 2014-03-12 | 江苏大学 | DSS (directional solidification system) quasi-monocrystal silicon growth furnace and growth method of quasi-monocrystal silicon |
| CN104389017A (en) * | 2014-08-18 | 2015-03-04 | 吕铁铮 | Internal inlet gas gas-cooling device of coagulation enhancing block of polycrystalline silicon ingot furnace and polycrystalline silicon ingot furnace |
| CN104404619A (en) * | 2014-08-18 | 2015-03-11 | 吕铁铮 | Polysilicon ingot furnace and coagulation aid block external admission air cooling device thereof |
| CN104195640A (en) * | 2014-08-28 | 2014-12-10 | 杭州铸泰科技有限公司 | Thermal field system for sapphire single crystal growth |
| CN107022791A (en) * | 2017-05-24 | 2017-08-08 | 镇江仁德新能源科技有限公司 | A kind of efficient silicon wafer thermal field Crystal growth device and method |
| CN109097829A (en) * | 2018-08-03 | 2018-12-28 | 湖南红太阳光电科技有限公司 | The preparation method of casting monocrystalline silicon heat insulation bottom board, casting monocrystalline silicon growth apparatus and casting monocrystalline silicon |
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