CN102140672B - Double-cavity thermal field of crystal silicon ingot casting furnace and control method thereof - Google Patents
Double-cavity thermal field of crystal silicon ingot casting furnace and control method thereof Download PDFInfo
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- CN102140672B CN102140672B CN 201110061820 CN201110061820A CN102140672B CN 102140672 B CN102140672 B CN 102140672B CN 201110061820 CN201110061820 CN 201110061820 CN 201110061820 A CN201110061820 A CN 201110061820A CN 102140672 B CN102140672 B CN 102140672B
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Abstract
The invention discloses a double-cavity thermal field of a crystal silicon ingot casting furnace and a control method thereof. All traditional ingot casting furnaces adopt the design of a fixed thermal cavity, and have the defects that the crystal melting process time and the crystal growing time can not be taken into account simultaneously in the practical production process; in addition, after the thermal field part is installed, only a fixed solid-liquid interface can be used, the solid-liquid interface can not be modified in the growing process, and the growing controllability of crystals is not high. The double-cavity thermal field is characterized in that a circle of insulating clapboards which support against the inner wall of an insulating cage and can lift up and down along the inner wall are arranged on the inner wall of the insulating cage, the insulating clapboards are made of insulating materials and positioned between the inner wall of the insulating cage and the outer wall of a heat exchanging table, the insulating clapboards positioned at two sides of the heat exchanging table are respectively fixedly connected with lifting rods, and the upper ends of the lifting rods penetrate through the insulating cage and are connected with a lifting driving mechanism. The double-cavity thermal field modifies the solid-liquid interface and the temperature gradient of the solid at any time through the lifting insulating clapboards, thus the optimal crystal growing environment and control on the shape of the solid-liquid interface are realized.
Description
Technical field
The present invention relates to crystal silicon ingot furnace thermal field field, specifically a kind of crystal silicon ingot furnace dual cavity thermal field and control method thereof.
Background technology
Polycrystalline silicon ingot casting technology experience years development is because improving constantly of its low-consumption high-efficiency and the full automatic mode of production and final product quality obtained the extensive approval of photovoltaic industry at present.
The factor that influences solar battery efficiency is a lot, to present solar cell industry, all is a very significant technological improvement even battery conversion efficiency increases by 0.1 percentage point.High-quality cell silicon chip is to size, the homogeneity of crystal grain; How many requirements of the morphological structure of crystal grain and crystal boundary foreign matter content are very high; Though these require more or less can both be through the groping of casting ingot process, improve and increase, many times also be confined to the immutableness of ingot furnace thermal field and be unable to stir any more.
See that from the aspect of technology and cost though at aspects such as efficient and energy consumptions, the polycrystalline ingot casting technology is superior to monocrystalline vertical pulling technology fully; But the battery tablet quality that the polycrystalline ingot casting technology makes is also slightly inadequate with monocrystalline vertical pulling compared with techniques.In order to dwindle qualitative gap; The applicant has developed a kind of novel accurate monocrystalline ingot casting thermal field; This technological precedence is in international most advanced level; The battery sheet efficiency of conversion that accurate single-chip makes is the highest can to reach 18% (accurate monocrystalline ingot casting thermal field patent applied for, number of patent application is 201010176628.9).
Under the condition of fixed thermal field of present stage; Nearly all ingot furnace Design Mode all is a nucleation stage of paying close attention to crystal growth; Have only good nucleation situation could guarantee a more excellent growing environment; And growth of later stage is just accomplished nucleation further trial more later on, and it is just very rare in general can to control crystal continuous property.
Be difficult to the predicament of looking at each other in the Gonna breakthrough crystal growing process end to end, the applicant has also done many effort, through repeated calculation and more deep research and experiment, on accurate monocrystalline thermal field, can guarantee good crystal growth continuity.But crystal growth is to the fine solution of also failing of the uncontrollable speed of growth of later stage and smooth inadequately solid-liquid interface problem.It is slower that present thus accurate monocrystalline thermal field also exists crystal melting speed, and the solid-liquid interface later stage is uncontrollable, the faint some shortcomings of crystal growth later stage motivating force.
Can only there be a hot chamber of fixed in the existing polycrystalline casting unit of vertical temperature gradient method growth that adopts, wants to take into account each stage process time, and whole energy consumption, crystal growth and interface control be difficulty very.And the HEM ingot furnace of suitable crystal growth can't use on extensive ingot production because there is the practical applications demand that moves up and down in crucible.How to solve these drawbacks, just become the goal in research of photovoltaic ingot casting industry.
All ingot furnaces all are the designs with the stationary heat chamber at present; Exist in the actual production process and can't take into account crystal melting and the drawback of crystal growth technique time; In case the thermal field component installation just can only be used the fixed solid-liquid interface simultaneously; Can't in process of growth, constantly revise solid-liquid interface, the crystal growth controllability is not strong.
Summary of the invention
In order to overcome the deficiency that above prior art exists; The invention provides a kind of crystal silicon ingot furnace dual cavity thermal field; Revise solid-liquid interface and the silicon melt and the solid thermograde in any moment through lifting partition, to realize the shape of best environment of crystal growth and control solid-liquid interface.
The technical scheme that the present invention adopts is: a kind of crystal silicon ingot furnace dual cavity thermal field; Comprise adiabatic cage, be arranged at well heater in the adiabatic cage, be used to place the heat exchange platform of crucible and be used for the heat exchange platform and adiabatic cage outside between the hot topic of dispelling the heat; The below of said adiabatic cage is provided with a cooled plate or water cooled furnace wall; The heat exchange platform places in the adiabatic cage; It is characterized in that: the inwall of said adiabatic cage is provided with that a circle is conflicted above that and can be along the dividing plate of its up-down, and dividing plate is processed by thermal insulation material, and dividing plate is between the inwall and heat exchange platform outer wall of adiabatic cage; Be positioned at an all affixed suspension rod on the dividing plate of heat exchange platform both sides, described suspension rod upper end is passed adiabatic cage and is connected with a lift drive mechanism.The present invention realizes the up-down of sidepiece dividing plate through lift drive mechanism (like cylinder), revises the solid-liquid interface in any moment and the thermograde of silicon melt through the up-down of dividing plate.
Dividing plate of the present invention is divided into two parts with hot chamber, and hot chamber, its middle and upper part is need keep the pyritous zone in the crystal growing process, and hot chamber, bottom is no longer need keep the pyritous zone, and in general this hot cavity space connects the bottom radiator structure.
Revise solid-liquid interface and the silicon melt and the solid thermograde in any moment through lifting partition.Generally, solid-liquid interface control adjustment can be undertaken by following mode: when the recessed solid-liquid interface shape of user's needs, dividing plate can be positioned at higher position so; When the user needs the solid-liquid interface shape of epirelief, dividing plate can be positioned at lower position so.
Actual travel position is accurately then determined according to the measuring and calculating of solid-liquid interface position at that time by crystal growth technique; Be that the lowest order that dividing plate moves is the bottom of adiabatic cage, the most significant digit that dividing plate moves is determined according to the measuring and calculating of solid-liquid interface position at that time by crystal growth technique.
Above-mentioned crystal silicon ingot furnace dual cavity thermal field is following to the control method of crystal growing process: when ingot furnace is in the fusion stage; Dividing plate drops to lowest order; Heat gets into silicon melt simultaneously through silicon liquid surface, sidewall, bottom; Not only can significantly reduce the silicon liquid upper and lower ends temperature difference, and can improve burn-off rate; Form the stage when ingot casting is in nucleus, move on the partition position, this stage needs to reduce rapidly bottom temp; Form enough condensate depression; Guarantee that nucleus forms in order, can play such effectiveness and move on the dividing plate, this stage is equally applicable to the seed crystal protective position; The adjusting of dividing plate can guarantee that solid-liquid interface maintains horizontality in the slow melting process; When ingot casting gets into mid-term, dividing plate can continue to move upward, and remains silicon melt and partly is positioned at hot chamber; The silicon solid part is positioned at colder chamber; Thereby guarantee the crystal growth motivating force, keep the constant crystalline growth velocity, and lifting partition can also keep the solid-liquid interface level; When the ingot casting entering later stage, dividing plate also moves to the top, and the stage upper flat reduces the long angle process time significantly thoroughly; When ingot casting finishes, get into annealing stage, dividing plate is got back to lowest order, has guaranteed comparatively homogeneous temp distribution in the silicon solid again, reduces the generation of thermal stresses.
The design of the controlled dual cavity of the present invention can be combined with any thermal field structure, preferably utilizes louver structure to control the thermal field of popular folding, can bring into play the bigger effect of dual cavity.
Above-mentioned crystal silicon ingot furnace dual cavity thermal field; Be provided with a plurality of louvress between the bottom of described cooled plate or water cooled furnace wall and adiabatic cage; Run through a rotation axis on each louvres, all rotation axiss are connected with a rotary drive mechanism, and the shaft contact of all louvress is positioned on the same sea line; When all louvress turned to level attitude, described louvres formed a smooth plate with adiabatic cage closed bottom.On louvres, anchor clamps, are sealed and matched through step between the adjacent louvres when all louvress are horizontal by resistant to elevated temperatures metal or nonmetal processing rotation axis through clamps.The control method of louvres is following: it is 90 degree that louvres is controlled its rotational angle through rotary drive mechanism (like motor), between level attitude and vertical position, rotates.
The controlled thermal field of dual cavity of the present invention is compared with other ingot casting thermal field has two big outstanding advantages:
1, in traditional thermal field design, perhaps pays close attention to the demand of the crystal growth interface in a certain stage in order to coordinate whole crystal growing process, interface control ability when having to abandon the certain phase growth, perhaps extra increase process time and power consumption.And adopt the controlled thermal field of dual cavity to revise the solid-liquid interface in any moment and the thermograde of silicon melt through lifting partition.In crystal growing process slowly, moving of dividing plate can make solid-liquid interface position and shape fit together, and realizes the environment of crystal growth of the best.Simultaneously no matter the final user needs the solid-liquid interface of which kind of form, also can utilize the adjustment partition position to realize.
2, the present invention can increase thermograde effectively in limited heat-dissipating space, has given play to maximum crystal growth motivating force.The thermal resistance that the silicon that this present invention can make the bottom solidify is no longer derived as caloric restriction, but become the parts that certain heat-exchange capacity is arranged.Can guarantee that like this crystal growth middle and later periods can obtain enough thermogrades and convert the growth motivating force into, when the bigger growth motivating force of needs, can make dividing plate be positioned at the higher position; Otherwise then make dividing plate be in lower position.
The present invention has fundamentally solved thermograde control and has controlled two hang-ups with solid-liquid interface, installs simultaneously and uses very easyly, and the practical engineering application prospect is known no measure.
Below in conjunction with Figure of description and embodiment the present invention is described further.
Description of drawings
Fig. 1 is a kind of structural representation of crystal silicon ingot furnace dual cavity thermal field of the present invention.
Fig. 2 is the johning knot composition of dividing plate of the present invention and lift drive mechanism.
Fig. 3 is the johning knot composition of louvres of the present invention and rotary drive mechanism.
Fig. 4-9 is the other several kinds of structural representations of crystal silicon ingot furnace dual cavity thermal field of the present invention.
Figure 10-11 reaches the thermal field mimic diagram after moving for dividing plate of the present invention is in lowest order.
Figure 12 forms the thermal field mimic diagram of recessed solid-liquid interface shape for the present invention.
Figure 13 forms the thermal field mimic diagram of epirelief solid-liquid interface shape for the present invention.
Figure 14-17 is the thermal field mimic diagram in each stage in the crystal growth thermal field process of the present invention.
Embodiment
Crystal silicon ingot furnace dual cavity thermal field as shown in Figure 1; Its by adiabatic cage 3, be arranged at single upper heater 2 in the adiabatic cage, be used to place the heat exchange platform 8 of crucible 7 and be used for the heat exchange platform and adiabatic cage outside between the hot topic of dispelling the heat form; The below of said adiabatic cage is provided with cooled plate 5; Heat exchange platform 8 places in the adiabatic cage 3, and the inwall of said adiabatic cage 3 is provided with that a circle is conflicted above that and can be along the dividing plate 1 of its up-down.Dividing plate is processed by thermal insulation material, and dividing plate 1 is positioned at all affixed suspension rod 6 on the dividing plate of heat exchange platform both sides between the inwall and heat exchange platform outer wall of adiabatic cage, and described suspension rod upper end is passed adiabatic cage and is connected with lift drive mechanism 9, and is as shown in Figure 2.
Be provided with a plurality of louvress 4 between the bottom of cooled plate 5 and adiabatic cage 3; As shown in Figure 3; Run through rotation axis 10 on each louvres 4, all rotation axiss 10 are connected with rotary drive mechanism 11, and the shaft contact of all louvress is positioned on the same sea line; When all louvress turned to level attitude, described louvres formed a smooth plate with adiabatic cage closed bottom.Rotation axis 10 is fixed on the louvres 4 through anchor clamps 12, and anchor clamps, are sealed and matched through step between the adjacent louvres when all louvress are horizontal by resistant to elevated temperatures metal or nonmetal processing.The control method of louvres is following: louvres is 90 degree through rotary drive mechanism 11 its rotational angles of control, between level attitude and vertical position, rotates.
Dual cavity structure of the present invention also can be applied in the following unitized construction, forms the other several kinds of structures of crystal silicon ingot furnace dual cavity thermal field:
A. moveable partition board, well heater up and down, blinds is popular and the cooled plate combination, sees Fig. 4;
B. moveable partition board, single upper heater, adiabatic base plate move down and the water cooled furnace wall combination, see Fig. 5;
C. moveable partition board, on reach side heater, adiabatic base plate moves down and the water cooled furnace wall combination, sees Fig. 6;
D. moveable partition board reaches side heater up and down, and adiabatic base plate moves down and the water cooled furnace wall combination, sees Fig. 7;
E. moveable partition board, on reach side heater, adiabatic cage promotes and the water cooled furnace wall combination, sees Fig. 8;
F. moveable partition board, single upper heater, adiabatic cage promote and the water cooled furnace wall combination, see Fig. 9.
When the thermal field hot topic is under the closing condition; And when solid-liquid interface maintains on the basically identical height; The height differ 170mm partition position can for silicon liquid inside bring near 1.4 times thermograde poor; It is shown in figure 10 that dividing plate is in the thermal field mimic diagram of lowest order (promptly 0), and the thermal field mimic diagram after moving on the dividing plate is shown in figure 11.When hot topic was constantly opened, the linear ratio of this temperature difference increased.
Generally, solid-liquid interface control adjustment can be undertaken by following mode: when the recessed solid-liquid interface shape of user's needs, dividing plate can be positioned at higher position so, and is shown in figure 12; When the user needs the solid-liquid interface shape of epirelief, dividing plate can be positioned at lower position so, and is shown in figure 13.
Utilize crystal silicon ingot furnace dual cavity thermal field of the present invention following to the control method of crystal growing process:
When ingot furnace is in the fusion stage, dividing plate drops to lowest order, can see in the thermal field mimic diagram (seeing Figure 14), and upper chamber comprises well heater and heat exchange platform simultaneously.Heat is surperficial through silicon liquid, sidewall, and the bottom gets into silicon melt simultaneously, not only can significantly reduce the silicon liquid upper and lower ends temperature difference, and can improve burn-off rate.
Form the stage when ingot casting is in nucleus, move on the partition position, this stage of thermal field mimic diagram (seeing Figure 15) needs to reduce rapidly bottom temp, forms enough condensate depression, guarantees that nucleus forms in order.Can play such effectiveness and move on the dividing plate.This stage is equally applicable to the seed crystal protective position.The adjusting of dividing plate can guarantee that solid-liquid interface maintains horizontality in the slow melting process.
When ingot casting gets into mid-term; Thermal field mimic diagram (seeing Figure 16) shows that dividing plate can continue to move upward, and remains silicon melt and partly is positioned at hot chamber; The silicon solid part is positioned at colder chamber; Thereby guarantee the crystal growth motivating force, keep the constant crystalline growth velocity, and lifting partition can also keep the solid-liquid interface level.
Fall dividing plate and also move to top (seeing Figure 17) when ingot casting gets into the later stage, the stage upper flat reduces the long angle process time significantly thoroughly.
When ingot casting finishes, get into annealing stage, dividing plate is got back to lowest order, has guaranteed comparatively homogeneous temp distribution in the silicon solid again, reduces the generation of thermal stresses.
Claims (6)
1. crystal silicon ingot furnace dual cavity thermal field; Comprise adiabatic cage, be arranged at well heater in the adiabatic cage, be used to place the heat exchange platform of crucible and be used for the heat exchange platform and adiabatic cage outside between the hot topic of dispelling the heat; The below of said adiabatic cage is provided with a cooled plate or water cooled furnace wall; The heat exchange platform places in the adiabatic cage; It is characterized in that: the inwall of said adiabatic cage is provided with that a circle is conflicted above that and can be along the lateral partitions of its up-down, and dividing plate is processed by thermal insulation material, and dividing plate is between the inwall and heat exchange platform outer wall of adiabatic cage; Be positioned at an all affixed suspension rod on the dividing plate of heat exchange platform both sides, described suspension rod upper end is passed adiabatic cage and is connected with a lift drive mechanism.
2. crystal silicon ingot furnace dual cavity thermal field according to claim 1; It is characterized in that being provided with a plurality of louvress between the bottom of described cooled plate or water cooled furnace wall and adiabatic cage; Run through a rotation axis on each louvres, all rotation axiss are connected with a rotary drive mechanism, and the shaft contact of all louvress is positioned on the same sea line; When all louvress turned to level attitude, described louvres formed a smooth plate with adiabatic cage closed bottom.
3. crystal silicon ingot furnace dual cavity thermal field according to claim 2 is characterized in that described rotation axis passes through clamps on louvres, and anchor clamps are by resistant to elevated temperatures metal or nonmetal processing.
4. crystal silicon ingot furnace dual cavity thermal field according to claim 2 is characterized in that when all louvress are horizontal, being sealed and matched through step between the adjacent louvres.
5. the control method of the said crystal silicon ingot furnace of claim 1 dual cavity thermal field is characterized in that: when ingot casting is in the fusion stage, dividing plate drops to lowest order; Form the stage when ingot casting is in nucleus, move on the partition position; When ingot casting gets into mid-term, dividing plate continues to move upward, and remains silicon melt and partly is positioned at hot chamber, and the silicon solid part is positioned at colder chamber; When the ingot casting entering later stage, dividing plate moves to the top; When ingot casting finishes, get into annealing stage, dividing plate is got back to lowest order.
6. the control method of the said crystal silicon ingot furnace of claim 2 dual cavity thermal field is characterized in that the control method of louvres is following: louvres is 90 degree through its rotational angle of rotary drive mechanism control, between level attitude and vertical position, rotates.
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| WO2012171308A1 (en) * | 2011-06-15 | 2012-12-20 | 安阳市凤凰光伏科技有限公司 | Method for cast production of quasi-monocrystalline silicon |
| FR2980489B1 (en) * | 2011-09-28 | 2014-09-19 | Ecm Technologies | CRYSTAL DIRECTED SOLIDIFICATION OVEN |
| CN102732961A (en) * | 2012-06-01 | 2012-10-17 | 沈阳森之洋光伏科技有限公司 | Cooling method and cooling apparatus of polysilicon ingot furnace |
| CN103225106B (en) * | 2013-01-06 | 2015-07-29 | 奥特斯维能源（太仓）有限公司 | A kind of thermal field casting high-efficiency polycrystalline |
| CN103334154A (en) * | 2013-05-29 | 2013-10-02 | 浙江晟辉科技有限公司 | Preparation method of polycrystalline silicon ingots based on thermal exchange technology |
| CN103320848B (en) * | 2013-07-11 | 2015-11-18 | 英利能源（中国）有限公司 | A kind of polycrystalline ingot furnace |
| CN103866383B (en) * | 2014-03-23 | 2016-03-02 | 山西中电科新能源技术有限公司 | Polycrystalline silicon ingot or purifying furnace energy saver |
| CN104451874B (en) * | 2014-11-20 | 2017-09-12 | 英利集团有限公司 | The preparation method of ingot furnace and silicon ingot |
| CN105332051A (en) * | 2015-10-30 | 2016-02-17 | 江苏美科硅能源有限公司 | Bottom seed crystal protecting device for polycrystal casting |
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| US5248377A (en) * | 1989-12-01 | 1993-09-28 | Grumman Aerospace Corporation | Crystal-growth furnace for interface curvature control |
| CN101323973A (en) * | 2008-07-04 | 2008-12-17 | 绍兴县精工机电研究所有限公司 | Polysilicon directional long crystal thermal field |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JPH1129398A (en) * | 1997-07-07 | 1999-02-02 | Hitachi Cable Ltd | Apparatus for producing compound semiconductor single crystal |
| JP2001031491A (en) * | 1999-07-21 | 2001-02-06 | Hitachi Cable Ltd | Method and apparatus for producing semiconductor crystal |
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| US5248377A (en) * | 1989-12-01 | 1993-09-28 | Grumman Aerospace Corporation | Crystal-growth furnace for interface curvature control |
| CN101323973A (en) * | 2008-07-04 | 2008-12-17 | 绍兴县精工机电研究所有限公司 | Polysilicon directional long crystal thermal field |
| CN101624187A (en) * | 2009-07-22 | 2010-01-13 | 管悦 | Polysilicon growth ingot furnace |
| CN202064029U (en) * | 2011-03-15 | 2011-12-07 | 杭州精功机电研究所有限公司 | Double-cavity thermal field of crystal silicon ingot furnace |
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