CN105332051A - Bottom seed crystal protecting device for polycrystal casting - Google Patents
Bottom seed crystal protecting device for polycrystal casting Download PDFInfo
- Publication number
- CN105332051A CN105332051A CN201510716332.4A CN201510716332A CN105332051A CN 105332051 A CN105332051 A CN 105332051A CN 201510716332 A CN201510716332 A CN 201510716332A CN 105332051 A CN105332051 A CN 105332051A
- Authority
- CN
- China
- Prior art keywords
- seed crystal
- guard plate
- side guard
- blend stop
- protecting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B28/00—Production of homogeneous polycrystalline material with defined structure
- C30B28/04—Production of homogeneous polycrystalline material with defined structure from liquids
- C30B28/06—Production of homogeneous polycrystalline material with defined structure from liquids by normal freezing or freezing under temperature gradient
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Silicon Compounds (AREA)
Abstract
The invention relates to a bottom seed crystal protecting device for polycrystal casting. The bottom seed crystal protecting device comprises side protecting plates, a bottom protecting plate, an upper protecting plate and seed crystal protecting barrier strips; two rectangular air exhaust ports are formed in the top of each side protecting plate, waist-shaped holes are formed in each side protecting plate, the side edge of the other side of each side protecting plate is provided with screw holes, and the middle of the top of each side protecting plate is also provided with a screw hole; the bottom of each side protecting plate is provided with a positioning groove, and two threaded through holes are formed in each positioning groove; overflow holes are formed in each side protecting plate; fixing through holes are formed in each seed crystal protecting barrier strip, and the seed crystal protecting barrier strips are fixed on the positioning grooves of the side protecting plates through the threaded through holes, the fixing through holes, screws and nuts. According to the bottom seed crystal protecting device, it is guaranteed that the seed crystal fire barrier strips can be normally installed and used to enable bottom seed crystals to meet the technical requirements according to the different thermal field structures and special sizes during efficient polycrystal casting.
Description
Technical field
The present invention relates to field of photovoltaic technology, be specifically related to a kind of polycrystalline casting bottom seed crystal protector.
Background technology
Along with the mankind are to the increasing of energy demand, sun power becomes a kind of emerging energy and occurs in face of people, the main flow of the current written casting industry of the body solar energy polycrystalline silicon sheet as solar cell, the utilization ratio improving polysilicon becomes the research emphasis of each silicon chip processing enterprise, in order to promote production capacity, the ingot casting factory of industry is by transformation polycrystalline furnace thermal field, increase charging capacity, bottom paving seed crystal is adopted to have the mode of growth to carry out casting partly melting high-efficiency polycrystalline, efficiency reaches 18% or more, therefore, research for bottom seeded growth protection also more and more receives the concern of people.
Summary of the invention
Technical problem to be solved by this invention is to provide a kind of polycrystalline casting bottom seed crystal protector.
For solving the problems of the technologies described above, technical scheme of the present invention is:
A kind of polycrystalline casting bottom seed crystal protector, wherein, comprises side guard plate, end backplate, upper guard board and seed crystal protection blend stop, and described side guard plate quantity is four and is arranged at surrounding on backplate of the described end, and described side guard plate top is provided with two rectangle venting ports; Described side guard plate is provided with waist-shaped hole, and described waist-shaped hole quantity is 3, is evenly distributed from top to bottom in side guard plate side; On described side guard plate, opposite side side is provided with screw, and described screw quantity, size, position are all corresponding with waist-shaped hole, and by waist-shaped hole, screw and screw rod between described side guard plate, nut realizes being interconnected and fixed; Described side guard plate crown center position is also provided with screw, and described side guard plate realizes the connection between upper guard board by top screw, nut; Be provided with detent bottom described side guard plate, described detent is square, and is provided with two tapped through holes in described detent; Described side guard plate is provided with overflow weir, and described overflow weir shape is semicircle, and described overflow weir quantity is 4, is evenly distributed in the least significant end of described side guard plate; Described seed crystal protection blend stop is square structure, and its size, shape are corresponding with detent; Described seed crystal protection blend stop offers fixed via; described fixed via quantity is two; its position, size are corresponding with tapped through hole; the cross-sectional shape of described fixed via is T-shape structure; described seed crystal protection blend stop is by tapped through hole, and fixed via and screw rod, nut are fixed on the detent of described side guard plate.
A kind of polycrystalline casting bottom seed crystal protector, wherein, described seed crystal protection blend stop is provided with blend stop overflow weir, and described blend stop overflow weir quantity, position, shape, size are all corresponding with the overflow weir on side guard plate.
A kind of polycrystalline casting bottom seed crystal protector, wherein, described seed crystal protection baffle number is four
Beneficial effect of the present invention is:
During use, quartz crucible is placed on protector inside, and side guard plate is enclosed in the quartz crucible surrounding of casting polycrystalline, uses simple, handled easily.
The anti-leak-stopping silicon of safety in order to polycrystalline furnace equipment; bottom crucible side guard plate and on the fiery bar of seed crystal protection gear, overflow weir is set; its overflow weir size and position consistency; when to ensure to install the accurate and generation silicon hydrorrhea stream being; liquid silicon can by crucible side guard plate and the fiery bar overflow discharge orifice of seed crystal protection gear; set out alarm security silk, is that polycrystalline furnace enters urgent safety control program.
When casting high-efficiency polycrystalline according to different thermal field structures and space size, for guaranteeing to protect the gear of seed crystal fire bar can normal mounting and use, bottom seed crystal be made to reach the height of technical requirements.
Uniqueness arranges seed crystal protection blend stop; in the silicon material fusion stage; effectively can stop that the temperature direct radiation of side heater is to the inculating crystal layer being positioned at crucible bottom; effectively control crucible bottom heat; that bottom seed crystal is protected; in crystal growth phase; the seed crystal of silicon liquid under melted state under preserving carries out forming core and growth; because seed crystal distribution is more even; the crystalline substance flower grown and dislocation obtain good control; its silicon chip made is after being processed to battery, and dress changes the silicon chip of efficiency higher than traditional technology.Detent is set especially, while accomplishing to meet thermal field size, also can be good at fixing seed crystal protection shelves bar, improve result of use.
Accompanying drawing explanation
Fig. 1 is structure iron of the present invention.
Fig. 2 is side guard plate and base plate schematic diagram.
Fig. 3 is that side guard plate X is to schematic diagram.
Fig. 4 is side guard plate vertical view.
Fig. 5 is that seed crystal keeps off fiery bar scheme of installation.
Embodiment
A kind of polycrystalline casting bottom seed crystal protector, wherein, comprises side guard plate 1, end backplate 2, upper guard board 3 and seed crystal protection blend stop 4, described side guard plate 1 quantity is four, is arranged at the described end to protect, surrounding on 2, described side guard plate 1 top is provided with two rectangle venting ports 11; Described side guard plate 1 is provided with waist-shaped hole 12, and described waist-shaped hole 12 quantity is 3, is evenly distributed from top to bottom in side guard plate 1 side; On described side guard plate 1, opposite side side is provided with screw 13, and described screw 13 quantity, size, position are all corresponding with waist-shaped hole 12, and by waist-shaped hole 12, screw 13 and screw rod between described side guard plate 1, nut realizes being interconnected and fixed; Described side guard plate 1 crown center position is also provided with screw 14, and described side guard plate 1 realizes the connection between upper guard board 3 by top screw, nut; Be provided with detent 15 bottom described side guard plate 1, described detent 15 is square, and is provided with two tapped through holes 16 in described detent 15; Described side guard plate 1 is provided with overflow weir 17, and described overflow weir 17 shape is semicircle, and described overflow weir 17 quantity is 4, is evenly distributed in the least significant end of described side guard plate 1; Described seed crystal protection blend stop 4 is square structure, and its size, shape are corresponding with detent 15; Described seed crystal protection blend stop 4 offers fixed via 41; described fixed via 41 quantity is two; its position, size are corresponding with tapped through hole 16; the cross-sectional shape of described fixed via 41 is T-shape structure; described seed crystal protection blend stop 4 is by tapped through hole 16, and fixed via 41 and screw rod 42, nut 43 are fixed on the detent 14 of described side guard plate 1.Described seed crystal protection blend stop 4 is provided with blend stop overflow weir 44, and described blend stop overflow weir 44 quantity, position, shape, size are all corresponding with the overflow weir 17 on side guard plate.Described seed crystal protection baffle plate 4 quantity is four.
Beneficial effect of the present invention is:
During use, quartz crucible is placed on protector inside, and side guard plate is enclosed in the quartz crucible surrounding of casting polycrystalline, uses simple, handled easily.
The anti-leak-stopping silicon of safety in order to polycrystalline furnace equipment; bottom crucible side guard plate and on the fiery bar of seed crystal protection gear, overflow weir is set; its overflow weir size and position consistency; when to ensure to install the accurate and generation silicon hydrorrhea stream being; liquid silicon can by crucible side guard plate and the fiery bar overflow discharge orifice of seed crystal protection gear; set out alarm security silk, is that polycrystalline furnace enters urgent safety control program.
Cast high-efficiency polycrystalline time according to different thermal field structures and space size, for guaranteeing to protect gear fire bar (i.e. seed crystal protection blend stop) of seed crystal can normal mounting and use, bottom making, seed crystal reaches the height of technical requirements.
Uniqueness arranges seed crystal protection blend stop, can accomplish good control, accomplish to play good effect to seeded growth, significantly improve the battery conversion efficiency of ingot quality and silicon chip to crucible bottom heat.
Detent is set especially, while accomplishing to meet thermal field size, also can be good at fixing seed crystal protection shelves bar, improve result of use.
Here description of the invention and application is illustrative, not wants by scope restriction of the present invention in the above-described embodiments, and therefore, the present invention is not by the restriction of the present embodiment, and the technical scheme that any employing equivalence replacement obtains is all in the scope of protection of the invention.
Claims (3)
1. a polycrystalline casting bottom seed crystal protector, it is characterized in that, comprise side guard plate, end backplate, upper guard board and seed crystal protection blend stop, described side guard plate quantity is four and is arranged at surrounding on backplate of the described end, and described side guard plate top is provided with two rectangle venting ports; Described side guard plate is provided with waist-shaped hole, and described waist-shaped hole quantity is 3, is evenly distributed from top to bottom in side guard plate side; On described side guard plate, opposite side side is provided with screw, and described screw quantity, size, position are all corresponding with waist-shaped hole, and by waist-shaped hole, screw and screw rod between described side guard plate, nut realizes being interconnected and fixed; Described side guard plate crown center position is also provided with screw, and described side guard plate realizes the connection between upper guard board by top screw, nut; Be provided with detent bottom described side guard plate, described detent is square, and is provided with two tapped through holes in described detent; Described side guard plate is provided with overflow weir, and described overflow weir shape is semicircle, and described overflow weir quantity is 4, is evenly distributed in the least significant end of described side guard plate; Described seed crystal protection blend stop is square structure, and its size, shape are corresponding with detent; Described seed crystal protection blend stop offers fixed via; described fixed via quantity is two; its position, size are corresponding with tapped through hole; the cross-sectional shape of described fixed via is T-shape structure; described seed crystal protection blend stop is by tapped through hole, and fixed via and screw rod, nut are fixed on the detent of described side guard plate.
2. a kind of polycrystalline casting bottom as claimed in claim 1 seed crystal protector, is characterized in that, described seed crystal protection blend stop is provided with blend stop overflow weir, and described blend stop overflow weir quantity, position, shape, size are all corresponding with the overflow weir on side guard plate.
3. a kind of polycrystalline casting bottom as claimed in claim 1 seed crystal protector, is characterized in that, described seed crystal protection baffle number is four.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510716332.4A CN105332051A (en) | 2015-10-30 | 2015-10-30 | Bottom seed crystal protecting device for polycrystal casting |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510716332.4A CN105332051A (en) | 2015-10-30 | 2015-10-30 | Bottom seed crystal protecting device for polycrystal casting |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN105332051A true CN105332051A (en) | 2016-02-17 |
Family
ID=55282804
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510716332.4A Pending CN105332051A (en) | 2015-10-30 | 2015-10-30 | Bottom seed crystal protecting device for polycrystal casting |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105332051A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106350867A (en) * | 2016-11-17 | 2017-01-25 | 晶科能源有限公司 | Structure for installing heat insulation protection felt of polycrystalline silicon ingot production furnace and polycrystalline silicon ingot production furnace |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102140672A (en) * | 2011-03-15 | 2011-08-03 | 杭州精功机电研究所有限公司 | Double-cavity thermal field of crystal silicon ingot casting furnace and control method thereof |
| CN202208779U (en) * | 2011-07-27 | 2012-05-02 | 江苏协鑫硅材料科技发展有限公司 | Ingot furnace |
| CN202595326U (en) * | 2012-05-09 | 2012-12-12 | 熊红兵 | Crucible protection device for crystalline silicon ingot furnace |
| CN202744660U (en) * | 2012-06-06 | 2013-02-20 | 海润光伏科技股份有限公司 | Thermal field structure for ultra-large crystal grain ingot furnace |
| CN202968753U (en) * | 2012-09-28 | 2013-06-05 | 东海晶澳太阳能科技有限公司 | Improved polycrystalline silicon ingot casting crucible protective device |
-
2015
- 2015-10-30 CN CN201510716332.4A patent/CN105332051A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102140672A (en) * | 2011-03-15 | 2011-08-03 | 杭州精功机电研究所有限公司 | Double-cavity thermal field of crystal silicon ingot casting furnace and control method thereof |
| CN202208779U (en) * | 2011-07-27 | 2012-05-02 | 江苏协鑫硅材料科技发展有限公司 | Ingot furnace |
| CN202595326U (en) * | 2012-05-09 | 2012-12-12 | 熊红兵 | Crucible protection device for crystalline silicon ingot furnace |
| CN202744660U (en) * | 2012-06-06 | 2013-02-20 | 海润光伏科技股份有限公司 | Thermal field structure for ultra-large crystal grain ingot furnace |
| CN202968753U (en) * | 2012-09-28 | 2013-06-05 | 东海晶澳太阳能科技有限公司 | Improved polycrystalline silicon ingot casting crucible protective device |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106350867A (en) * | 2016-11-17 | 2017-01-25 | 晶科能源有限公司 | Structure for installing heat insulation protection felt of polycrystalline silicon ingot production furnace and polycrystalline silicon ingot production furnace |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101775641B (en) | Follow-up heat insulation ring thermal field structure for vertical oriented growth of polysilicon | |
| CN101935869B (en) | Crucible and substrate slice for growing and casting monocrystalline silicon | |
| CN102162125B (en) | Thermal field structure of polysilicon ingot casting furnace | |
| CN102877129B (en) | A kind of crystalline silicon and preparation method thereof | |
| CN101935867A (en) | Method for growing large-grain cast multicrystalline silicon | |
| CN103952754A (en) | Monocrystal-like silicon ingot preparation method and methods for preparing monocrystal-like silicon wafers by cutting monocrystal-like silicon ingot | |
| CN102965727B (en) | Polycrystalline silicon ingot and casting method thereof | |
| CN103397379A (en) | High-efficiency polycrystalline silicon ingot casting furnace | |
| CN202730295U (en) | Crucible protecting plate for monocrystalline silicon casting | |
| CN203393257U (en) | Ingot furnace with plurality of heat-conduction bottom plates for producing efficient polycrystalline silicon ingot | |
| CN202202019U (en) | Heat exchange platform for growing silicon crystals in casting process | |
| CN105332051A (en) | Bottom seed crystal protecting device for polycrystal casting | |
| CN103112093A (en) | Sliced method of polycrystalline silicon solar cell | |
| CN205152396U (en) | Polycrystal casting is with bottom seed crystal protection device | |
| CN202543391U (en) | Polysilicon ingot furnace | |
| CN203382852U (en) | Variable heater high-efficient polycrystalline silicon ingot casting furnace | |
| CN102912414A (en) | Polycrystalline silicon ingot production furnace and crucible thereof | |
| CN209468525U (en) | Polycrystalline silicon ingot casting thermal field structure, polycrystalline silicon ingot or purifying furnace and polycrystal silicon ingot | |
| CN205907394U (en) | Polycrystalline silicon ingot furnace is with six heating device | |
| CN106119956A (en) | A kind of polysilicon fritting casting ingot method | |
| CN201660714U (en) | Follow-up heat insulation ring thermal field structure for vertical and directional polycrystalline growth | |
| CN207062423U (en) | Ingot casting furnace bottom attemperator and ingot furnace | |
| CN206188924U (en) | Polycrystalline silicon ingot furnace | |
| KR101196378B1 (en) | Manufacturing equipment for polysilicon ingot comprising multi-crucible | |
| CN205985017U (en) | High -efficient absorb light's monocrystalline silicon piece |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20160217 |