CN112176407A - Thermal field structure of square silicon core ingot furnace and preparation method - Google Patents
Thermal field structure of square silicon core ingot furnace and preparation method Download PDFInfo
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- CN112176407A CN112176407A CN202011132224.XA CN202011132224A CN112176407A CN 112176407 A CN112176407 A CN 112176407A CN 202011132224 A CN202011132224 A CN 202011132224A CN 112176407 A CN112176407 A CN 112176407A
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 51
- 238000002360 preparation method Methods 0.000 title claims abstract description 10
- 238000009413 insulation Methods 0.000 claims abstract description 62
- 239000013078 crystal Substances 0.000 claims abstract description 45
- 238000000034 method Methods 0.000 claims abstract description 16
- 238000005265 energy consumption Methods 0.000 claims abstract description 9
- 229910052710 silicon Inorganic materials 0.000 claims description 24
- 239000010703 silicon Substances 0.000 claims description 24
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 18
- 238000001816 cooling Methods 0.000 claims description 15
- 238000002844 melting Methods 0.000 claims description 15
- 230000008018 melting Effects 0.000 claims description 15
- 239000002210 silicon-based material Substances 0.000 claims description 15
- 238000000137 annealing Methods 0.000 claims description 12
- 229910052786 argon Inorganic materials 0.000 claims description 9
- 238000010438 heat treatment Methods 0.000 claims description 9
- 239000007788 liquid Substances 0.000 claims description 9
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 8
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 6
- 239000007787 solid Substances 0.000 claims description 6
- 239000002994 raw material Substances 0.000 claims description 5
- 239000011248 coating agent Substances 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 3
- 238000001514 detection method Methods 0.000 claims description 3
- 230000017525 heat dissipation Effects 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 3
- 238000010309 melting process Methods 0.000 claims description 3
- 230000035755 proliferation Effects 0.000 claims description 3
- 239000011253 protective coating Substances 0.000 claims description 3
- 238000007711 solidification Methods 0.000 claims description 3
- 230000008023 solidification Effects 0.000 claims description 3
- 230000008646 thermal stress Effects 0.000 claims description 3
- 238000007599 discharging Methods 0.000 claims 1
- 238000009826 distribution Methods 0.000 abstract description 3
- 238000004519 manufacturing process Methods 0.000 description 6
- 238000006722 reduction reaction Methods 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 238000005266 casting Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000013067 intermediate product Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 description 1
- 239000005052 trichlorosilane Substances 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
- 238000004857 zone melting Methods 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B28/00—Production of homogeneous polycrystalline material with defined structure
- C30B28/04—Production of homogeneous polycrystalline material with defined structure from liquids
- C30B28/06—Production of homogeneous polycrystalline material with defined structure from liquids by normal freezing or freezing under temperature gradient
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Silicon Compounds (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The invention discloses a thermal field structure of a square silicon core ingot furnace and a preparation method thereof, and mainly aims to solve the problems that the temperature distribution of a thermal field is not uniform, and grown crystals are easy to crack. The method comprises the following steps: the furnace body is divided into an upper furnace body and a lower furnace body; the heat insulation layer is arranged in the furnace body; the upright post is fixed on the lower furnace body; the heat exchange table is fixed on the upright post; the heat insulation board is arranged at the bottom of the heat insulation layer, the stand column penetrates through the heat insulation board, and the heat insulation board can lift on the stand column. The invention has the advantages of stable thermal field, contribution to crystal growth and reduction of energy consumption.
Description
Technical Field
The invention relates to the technical field of polycrystalline silicon, in particular to a thermal field structure of a square silicon core ingot furnace and a preparation method thereof.
Background
Polycrystalline silicon is a very important intermediate product in the silicon product industry chain, is a main raw material for manufacturing silicon polished wafers, solar cells and high-purity silicon products, and is the most basic raw material of the information industry and the new energy industry. The production technology of the world polycrystalline silicon is gradually mature, and most manufacturers adopt the improved Siemens method technology, so that closed cycle production in the production process is realized.
The principle of the improved Siemens method is that high-purity hydrogen is used for reducing high-purity trichlorosilane on a high-purity silicon core at the temperature of about 1100 ℃, and polycrystalline silicon is generated and deposited on the silicon core. Generally, the diameter of a silicon core is 7-10 mm, and the silicon core can be round, square or other shapes, and finally the diameter is continuously increased to a target size through hydrogen reduction reaction to produce high-purity solar grade 6N or electronic grade 11N polycrystalline silicon.
The cuboid silicon ingot produced by the silicon core ingot furnace is cut into square silicon cores, and the ingot type square silicon cores have the advantages of energy consumption, productivity, resistivity uniformity and the like compared with the traditional straight pulling method and zone melting method.
In the prior art, a heat radiation mode is improved by a side heat insulation layer when a thermal field structure grows crystals, and the whole length of the heat insulation layer is about 4 meters, so that the side part is easy to deform and bulge in the improvement process, the temperature distribution of the thermal field is uneven, and cast silicon ingots have poor quality and are easy to crack.
Disclosure of Invention
The invention aims to provide a thermal field structure of a square silicon core ingot furnace and a preparation method thereof, and aims to solve the problems that the middle side part is easy to deform and bulge due to the fact that a side heat insulation layer is adopted to improve heat dissipation, so that the temperature distribution of the thermal field is uneven, and grown crystals are easy to crack.
In order to achieve the purpose, the embodiment of the invention adopts the following scheme:
a thermal field structure of a square silicon core ingot furnace and a preparation method thereof are characterized by comprising the following steps:
the furnace body is divided into an upper furnace body and a lower furnace body;
the heat insulation layer is arranged in the furnace body;
the upright post is fixed on the lower furnace body;
the heat exchange table is fixed on the upright post;
the heat insulation board is arranged at the bottom of the heat insulation layer, the stand column penetrates through the heat insulation board, and the heat insulation board can lift on the stand column.
Preferably, a heater is arranged in the heat insulation layer.
Preferably, the heat insulation plate is provided with a heat insulation strip.
Preferably, a crucible is arranged on the heat exchange platform.
Preferably, the heat insulation layer is n-shaped.
Preferably, the inner surface of the crucible is coated with a layer of silicon nitride.
Preferably, the heaters are provided in two groups.
Preferably, the power of the heater is 0-120 kw.
Preferably, a gap is left between the heat exchange station and the heat insulation plate.
Preferably, the upper furnace body is connected with the lower furnace body.
A preparation method of a thermal field structure of a square silicon core ingot furnace comprises the following casting process steps:
charging: the method comprises the following steps of (1) placing prepared silicon materials into a crucible according to requirements by adopting a polycrystalline silicon raw material with the purity of 6N, wherein a layer of high-purity protective coating is coated on the inner surface of the crucible, and the coating is silicon nitride and is used for preventing the silicon materials from being adhered to the crucible;
charging: placing the crucible filled with the materials into a designated position in a furnace, closing the furnace, evacuating and detecting leakage until the pressure in the furnace is less than or equal to 0.01mbar, and entering leakage detection;
thirdly, heating and melting: the leakage rate is less than or equal to 0.01mbarl/5min, the heating and melting stage is started, the bottom heat insulation plate is kept in a closed state in the whole heating and melting stage, heat loss is isolated, melting energy consumption is reduced, the power is increased to the target temperature by 15-30 Kwh/h and then kept until all the silicon materials are converted into liquid from solid;
fourthly, crystal growth: the bottom heat insulation plate and the side heat insulation strips move downwards together in the crystal growth stage and are gradually opened, after the bottom heat insulation plate is opened, heat is quickly radiated and dissipated from the opening position to form a large longitudinal temperature gradient, directional solidification and growth of silicon crystals are facilitated, the side heat insulation strips gradually descend along with the bottom heat insulation plate, heat dissipation of the side portions in the crystal growth stage can be reduced, and vertical growth of side crystals and reduction of energy consumption in the crystal growth stage are facilitated. In the initial stage of crystal growth, the bottom heat insulation plate is quickly opened at the speed of 30-50 mm/h, and the temperature of the heater is quickly reduced at the speed of 200-300 ℃/h; after 1-2 h, quickly opening the bottom thermal insulation plate at a speed of 3-10 mm/h, gradually reducing the temperature of a heater at a speed of 0.5-10 ℃/h, controlling a solid-liquid interface for crystal growth to be stable or slightly convex, and realizing vertical crystal growth of crystals until liquid silicon is completely solidified into solid silicon;
annealing and cooling: after all silicon materials are solidified and crystallized, the silicon ingot is subjected to thermal annealing at 1200-1370 ℃, a cooling mode is controlled, and the like to eliminate thermal stress so as to avoid the occurrence of cracks in the silicon ingot and reduce dislocation proliferation;
taking out of the furnace: after the whole process flow is finished, cooling to the temperature of less than or equal to 400 ℃, opening the furnace, and taking out silicon ingots;
and seventhly, in the stages of melting, crystal growth, annealing and cooling, continuously introducing argon into the furnace body for protection, wherein the air inlet speed of the argon is 20-60L/min in the melting process of the heated silicon material, the air inlet speed of the argon is 40-60L/min in the crystal growth process, and the annealing and cooling stage is 10-20L/min.
The invention has the beneficial effects that:
in the whole crystal production process, only one moving part (bottom heat insulation plate) is arranged, so that the complexity of equipment is reduced, and the operation is simplified; the upper thermal field is fixed, the structure is stable, the thermal field is not deformed, the thermal stability of the whole thermal field is improved, and the production of large-size (the length/width/height is more than or equal to 3500/550/270 mm) high-quality square silicon core silicon ingots is facilitated;
secondly, the side heat-insulating strips are embedded and fixed on the bottom heat-insulating plate and synchronously lift along with the bottom heat-insulating plate, the side heat-insulating strips gradually descend along with the bottom heat-insulating plate in the crystal growth stage, heat loss of the side part in the crystal growth stage can be reduced, and vertical growth of crystals on the side surface and reduction of energy consumption in the crystal growth stage are facilitated.
Drawings
FIG. 1 is a schematic view of a closed thermal field structure of a thermal shield according to the present invention.
FIG. 2 is a schematic view of the structure of the heat insulation board opening thermal field in the present invention.
FIG. 3 is a schematic view of the heat shield and movable side heat shield strips of the present invention
1. Furnace body 2, insulating layer 3, heater
4. Crucible 5, heat exchange platform 6, stand
11. An upper furnace body 12, a lower furnace body 21 and a heat insulation plate
22. Heat insulation strip 23 and heat insulation layer
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention clear and fully described, embodiments of the present invention are further described in detail below with reference to the accompanying drawings. It is to be understood that the specific embodiments described herein are merely illustrative of some embodiments of the invention and are not limiting of the invention, and that all other embodiments obtained by those of ordinary skill in the art without the exercise of inventive faculty are within the scope of the invention.
In the description of the present invention, it should be noted that the terms "center", "upper", "lower", "left", "right", "inner", "outer", "top", "bottom", "side", "vertical", "horizontal", and the like indicate orientations or positional relationships based on those shown in the drawings, and are only for convenience of description and simplicity of description, but do not indicate or imply that the referred device or element must have a specific orientation, be constructed in a specific orientation, and be operated, and thus, should not be construed as limiting the present invention. Furthermore, the terms "a," "an," "first," "second," "third," "fourth," "fifth," and "sixth" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
In the description of the present invention, it should be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral connection; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meanings of the above terms in the present invention can be understood in specific cases to those skilled in the art.
For the purposes of simplicity and explanation, the principles of the embodiments are described by referring mainly to examples. In the following description, numerous specific details are set forth in order to provide a thorough understanding of the embodiments. But it is obvious. To one of ordinary skill in the art, the embodiments may be practiced without limitation to these specific details. In some instances, well-known methods and structures have not been described in detail so as not to unnecessarily obscure the embodiments. In addition, all embodiments may be used in combination with each other.
As shown in figure 1, the invention relates to a thermal field structure of a square silicon core ingot furnace and a preparation method thereof, which is characterized by comprising the following steps: the furnace comprises a furnace body 1, a heat insulation layer 232, a stand column 6, a heat exchange table 5 and a heat insulation plate 21, wherein the furnace body 1 is divided into an upper furnace body 11 and a lower furnace body 12; the heat insulation layer 232 is arranged in the furnace body 1; the upright post 6 is fixed on the lower furnace body 12; the heat exchange platform 5 is fixed on the upright post 6; the heat insulation plate 21 is arranged at the bottom of the heat insulation layer 232, the upright post 6 penetrates through the heat insulation plate 21, and the heat insulation plate 21 can be lifted on the upright post 6.
Specifically, the heater 3 is provided in the heat insulating layer 232.
Specifically, the heat insulation board 21 is provided with a heat insulation strip 22.
Specifically, the heat exchange table 5 is provided with a crucible 4.
Specifically, the heat insulating layer 232 is in a n shape.
Specifically, the inner surface of the crucible 4 is coated with a layer of silicon nitride.
Specifically, the heaters 3 are provided in two groups.
Specifically, the power of the heater 3 is 0 to 120 kw.
Specifically, a gap is left between the heat exchange table 5 and the heat insulation plate 21.
Specifically, the upper furnace body 11 is connected to the lower furnace body 12.
A preparation method of a thermal field structure of a square silicon core ingot furnace comprises the following casting process steps:
charging: the method comprises the following steps of (1) placing prepared silicon materials into a crucible 4 according to requirements by using a polycrystalline silicon raw material with the purity of 6N, wherein a layer of high-purity protective coating is coated on the inner surface of the crucible 4, and the coating is silicon nitride and is used for preventing the silicon materials from being adhered to the crucible 4;
charging: placing the crucible 4 filled with the materials into a designated position in the furnace, closing the furnace, evacuating and detecting leakage, evacuating until the pressure in the furnace is less than or equal to 0.01mbar, and entering leakage detection;
thirdly, heating and melting: the leakage rate is less than or equal to 0.01mbarl/5min, the heating and melting stage is started, the bottom heat insulation plate 21 is kept in a closed state in the whole heating and melting stage, as shown in figure 1, heat loss is isolated, melting energy consumption is reduced, the power is increased to a target temperature by 15-30 Kwh/h and then is kept until all silicon materials are converted into liquid from solid;
fourthly, crystal growth: the bottom heat-insulating plate 21 and the side heat-insulating strips 22 move downwards together in the crystal growth stage and are gradually opened, after the bottom heat-insulating plate 21 is opened (as shown in fig. 2), heat is quickly radiated and dissipated from the opening position to form a large longitudinal temperature gradient, so that the directional solidification growth of silicon crystals is facilitated, and the side heat-insulating strips 22 gradually descend along with the bottom heat-insulating plate 21, so that the loss of heat at the side parts in the crystal growth stage is reduced, and the vertical growth of side crystals and the reduction of energy consumption in the crystal growth stage are facilitated. In the initial stage of crystal growth, the bottom heat insulation plate 21 is quickly opened at the speed of 30-50 mm/h, and the temperature of the heater 3 is quickly reduced at the speed of 200-300 ℃/h; after 1-2 h, the bottom heat insulation plate 21 is quickly opened at the speed of 3-10 mm/h, the temperature of the heater 3 is gradually reduced at the speed of 0.5-10 ℃/h, the solid-liquid interface for crystal growth is controlled to be stable or slightly convex, and vertical crystal growth of the crystal is realized until liquid silicon is completely solidified into solid silicon;
annealing and cooling: after all silicon materials are solidified and crystallized, the silicon ingot is subjected to thermal annealing at 1200-1370 ℃, a cooling mode is controlled, and the like to eliminate thermal stress so as to avoid the occurrence of cracks in the silicon ingot and reduce dislocation proliferation;
taking out of the furnace: after the whole process flow is finished, cooling to the temperature of less than or equal to 400 ℃, opening the furnace, and taking out silicon ingots;
and seventhly, in the stages of melting, crystal growth, annealing and cooling, continuously introducing argon into the furnace body 1 for protection, wherein the air inlet speed of the argon is 20-60L/min in the melting process of the heated silicon material, the air inlet speed of the argon is 40-60L/min in the crystal growth process, and the annealing and cooling stage is 10-20L/min.
Although the illustrative embodiments of the present invention have been described above to enable those skilled in the art to understand the present invention, the present invention is not limited to the scope of the embodiments, and it is apparent to those skilled in the art that all the inventive concepts using the present invention are protected as long as they can be changed within the spirit and scope of the present invention as defined and defined by the appended claims.
Claims (10)
1. The utility model provides a square silicon core ingot furnace thermal field structure which characterized in that includes:
the furnace body is divided into an upper furnace body and a lower furnace body;
the heat insulation layer is arranged in the furnace body;
the upright post is fixed on the lower furnace body;
the heat exchange table is fixed on the upright post;
the heat insulation board is arranged at the bottom of the heat insulation layer, the stand column penetrates through the heat insulation board, and the heat insulation board can lift on the stand column.
2. The thermal field structure of the square silicon core ingot furnace of claim 1, wherein a heater is arranged in the heat insulation layer.
3. The thermal field structure of the square silicon core ingot furnace of claim 1, wherein the heat insulation plate is provided with heat insulation strips.
4. The thermal field structure of the square silicon core ingot furnace of claim 1, wherein a crucible is arranged on the heat exchange platform.
5. The square silicon core ingot furnace thermal field structure of claim 1, wherein the thermal insulation layer is n-shaped.
6. The thermal field structure of the square silicon core ingot furnace as claimed in claim 1, wherein the inner surface of the crucible is coated with a layer of silicon nitride.
7. The thermal field structure of the square silicon core ingot furnace of claim 1, wherein two groups of heaters are provided.
8. The thermal field structure of the square silicon core ingot furnace of claim 1, wherein the power of the heater is 0-120 kw.
9. The heat field structure of the square silicon core ingot furnace of claim 1, wherein a gap is left between the heat exchange platform and the heat insulation plate.
10. A preparation method of a thermal field structure of a square silicon core ingot furnace comprises the following steps:
charging: the method comprises the following steps of (1) placing prepared silicon materials into a crucible according to requirements by adopting a polycrystalline silicon raw material with the purity of 6N, wherein a layer of high-purity protective coating is coated on the inner surface of the crucible, and the coating is silicon nitride and is used for preventing the silicon materials from being adhered to the crucible;
furnace throwing: placing the crucible filled with the materials into a designated position in a furnace, closing the furnace, evacuating and detecting leakage until the pressure in the furnace is less than or equal to 0.01mbar, and entering leakage detection;
heating and melting: the leakage rate is less than or equal to 0.01mbarl/5min, the heating and melting stage is started, the bottom heat insulation plate is kept in a closed state in the whole heating and melting stage, heat loss is isolated, melting energy consumption is reduced, the power is increased to the target temperature by 15-30 Kwh/h and then kept until all the silicon materials are converted into liquid from solid;
crystal growth: the bottom heat insulation plate and the side heat insulation strips move downwards together in the crystal growth stage and are gradually opened, after the bottom heat insulation plate is opened, heat is quickly radiated and dissipated from the opening position to form a large longitudinal temperature gradient, directional solidification and growth of silicon crystals are facilitated, the side heat insulation strips gradually descend along with the bottom heat insulation plate, heat dissipation of the side portions in the crystal growth stage can be reduced, and vertical growth of side crystals and reduction of energy consumption in the crystal growth stage are facilitated. In the initial stage of crystal growth, the bottom heat insulation plate is quickly opened at the speed of 30-50 mm/h, and the temperature of the heater is quickly reduced at the speed of 200-300 ℃/h; after 1-2 h, quickly opening the bottom thermal insulation plate at a speed of 3-10 mm/h, gradually reducing the temperature of a heater at a speed of 0.5-10 ℃/h, controlling a solid-liquid interface for crystal growth to be stable or slightly convex, and realizing vertical crystal growth of crystals until liquid silicon is completely solidified into solid silicon;
annealing and cooling: after all silicon materials are solidified and crystallized, the silicon ingot is subjected to thermal annealing at 1200-1370 ℃, a cooling mode is controlled, and the like to eliminate thermal stress so as to avoid the occurrence of cracks in the silicon ingot and reduce dislocation proliferation;
discharging: after the whole process flow is finished, cooling to the temperature of less than or equal to 400 ℃, opening the furnace, and taking out silicon ingots;
and seventhly, in the stages of melting, crystal growth, annealing and cooling, continuously introducing argon into the furnace body for protection, wherein the air inlet speed of the argon is 20-60L/min in the melting process of the heated silicon material, the air inlet speed of the argon is 40-60L/min in the crystal growth process, and the annealing and cooling stage is 10-20L/min.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113584584A (en) * | 2021-08-06 | 2021-11-02 | 内蒙古和光新能源有限公司 | Method for producing silicon core rod by casting |
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