CN102862986A - Directional coagulator for producing solar polycrystalline silicon by metallurgical method and method for producing polycrystalline silicon - Google Patents
Directional coagulator for producing solar polycrystalline silicon by metallurgical method and method for producing polycrystalline silicon Download PDFInfo
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- CN102862986A CN102862986A CN2012101156535A CN201210115653A CN102862986A CN 102862986 A CN102862986 A CN 102862986A CN 2012101156535 A CN2012101156535 A CN 2012101156535A CN 201210115653 A CN201210115653 A CN 201210115653A CN 102862986 A CN102862986 A CN 102862986A
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Abstract
The invention provides a directional coagulator for producing solar polycrystalline silicon by a metallurgical method and a method for producing the polycrystalline silicon. According to the directional coagulator, a heat-preserving expansion layer, a fire retardant layer, a high-purity quartz powder coating layer and a silicon nitride coating layer are arranged in a furnace shell sequentially; a graphite heating plate is arranged on the upper part of the furnace shell; and a ventilating pipeline or a water passing pipeline is arranged in the base. The method comprises the following steps of: putting silicon liquid into the directional coagulator, putting the graphite heating plate into the lower part of the silicon liquid, placing the integral directional coagulator on the base, cooling the bottom of the directional coagulator, and performing directional coagulation for 8 to 15 hours. According to the directional coagulator, the high-purity quartz powder coating layer and the silicon nitride coating layer cannot be used repeatedly, and the heat-preserving expansion layer and the fire retardant layer can be used repeatedly. The aims of dephlegmation and impurity removal are fulfilled by a process of cooling the bottom of the directional coagulator and a process of moving a heating carbon slab. Compared with the conventional directional coagulation device, the directional coagulator has the advantages of simple structure, low manufacturing cost, short directional coagulation time and high yield of one-time directional coagulation.
Description
Technical field
The present invention relates to a kind ofly produce the directional freeze device that solar energy polycrystalline silicon uses and use this directional freeze device to produce the method for polysilicon.
Background technology
At present, the production method of HIGH-PURITY SILICON mainly contains two kinds of Siemens Method and metallurgy method, but any method no matter all will be used directional solidification processes and crucible.Directional freeze all is to adopt ingot furnace, approximately needs 50-60 hour to go out a stove, and every furnace output is generally 450 kilograms, and power consumption is minimum all more than 10000kwh.The crucible that adopts all is the quartz crucible of high purity quartz ceramic sintering, and inside is coated with silicon nitride layer, and the present maximum capacity of this crucible only has 450 kilograms, and market value is all more than 4000 yuan, and this product is disposable.The slow maximum reason of sun power industry development is exactly the production of polysilicon complex process, and cost is high.
Summary of the invention
The objective of the invention is to have the production of polysilicon complex process now in order to solve, the problem that production cost is high, and then provide a kind of metallurgy method to produce solar energy polycrystalline silicon directional freeze device and method for preparing polysilicon.
The objective of the invention is to be achieved through the following technical solutions:
A kind of metallurgy method is produced solar energy polycrystalline silicon directional freeze device, comprise: graphite heating plate, silicon nitride coating, the high-purity ground quartz coating, flame retardant coating, the insulation expanding layer, furnace shell and base, described furnace shell be arranged on base above, be provided with successively the insulation expanding layer in the furnace shell, flame retardant coating, high-purity ground quartz coating and silicon nitride coating, graphite heating plate is arranged on the top of furnace shell, be provided with the pipeline of ventilation or water flowing in the described base, base is provided with the pipe interface of ventilation or water flowing, described furnace shell is steel structure, the thickness of furnace shell is 18～25mm, the material of described insulation expanding layer is the insulation fibre felt, the thickness of insulation expanding layer is 20～40mm, the material of described flame retardant coating is clay brick or high alumina brick, the thickness of flame retardant coating is 65～100mm, the thickness of described high-purity ground quartz coating is 5～10mm, and the thickness of described silicon nitride coating is 2～5mm, and the capacity that described directional freeze device contains silicon liquid is 800～2000 kilograms.
A kind of metallurgy method of using is produced solar energy polycrystalline silicon is produced polysilicon with the directional freeze device method, silicon liquid is packed into behind the directional freeze device, graphite heating plate is put into silicon liquid bottom, then directional freeze device integral body is placed on the base bottom of directional freeze device is cooled off, and the graphite heating plate that slowly moves up, the silicon liquid of bottom in the directional freeze device is solidified gradually; The time of directional freeze is 8～15 hours, and the remaining silicon liquid in last directional freeze device top returns a purifying technique flow process and re-starts purification.
Directional freeze device of the present invention is except high-purity ground quartz coating and silicon nitride coating can not repeatedly use, and insulation expanding layer and flame retardant coating all can be repeatedly used.Process using directional freeze device bottom coohng technique of the present invention reaches the purpose of removal of impurities.The present invention has reduced production cost, has shortened the directional freeze time, has increased the output of a directional freeze, has improved production efficiency.
Description of drawings
Fig. 1 is that a kind of metallurgy method of the present invention is produced the external structure schematic diagram that solar energy polycrystalline silicon is used the directional freeze device;
Fig. 2 is that a kind of metallurgy method of the present invention is produced the cross-sectional view that solar energy polycrystalline silicon is used the directional freeze device;
Fig. 3 is that a kind of metallurgy method of the present invention is produced the vertical view that solar energy polycrystalline silicon is used the directional freeze device;
Fig. 4 is that a kind of metallurgy method of the present invention is produced the perspective view that solar energy polycrystalline silicon is used the directional freeze device.
Embodiment
The present invention is described in further detail below in conjunction with accompanying drawing: the present embodiment is implemented under take technical solution of the present invention as prerequisite, has provided detailed embodiment, but protection scope of the present invention is not limited to following embodiment.
Such as Fig. 1～shown in Figure 4, the related a kind of metallurgy method of the present embodiment is produced solar energy polycrystalline silicon directional freeze device, comprise: graphite heating plate 1, silicon nitride coating 2, high-purity ground quartz coating 3, flame retardant coating 4, insulation expanding layer 5, furnace shell 6 and base 7, described furnace shell 6 be arranged on base 7 above, be provided with successively insulation expanding layer 5 in the furnace shell 6, flame retardant coating 4, high-purity ground quartz coating 3 and silicon nitride coating 2, graphite heating plate 1 is arranged on the top of furnace shell 6, be provided with the pipeline of ventilation or water flowing in the described base 7, base 7 is provided with the pipe interface 8 of ventilation or water flowing, described furnace shell 6 is steel structure, the thickness of furnace shell 6 is 18～25mm, the material of described insulation expanding layer 5 is the insulation fibre felt, the thickness of insulation expanding layer 5 is 20～40mm, the material of described flame retardant coating 4 is clay brick or high alumina brick, the thickness of flame retardant coating 4 is 65～100mm, the thickness of described high-purity ground quartz coating 3 is 5～10mm, the thickness of described silicon nitride coating 2 is 2～5mm, and the capacity that described directional freeze device contains silicon liquid is 800～2000 kilograms.
Described furnace shell 6 is square structure or circular configuration, and described insulation expanding layer 5, flame retardant coating 4, high-purity ground quartz coating 3 and silicon nitride coating 2 are square structure or circular configuration with furnace shell 6.
The thickness of described furnace shell 6 is 20mm.
The thickness of described insulation expanding layer 5 is 30mm.
The thickness of described flame retardant coating 4 is 80mm.
The thickness of described high-purity ground quartz coating 3 is 7mm,
The thickness of described silicon nitride coating 2 is 3mm.
Directional freeze device of the present invention is put on the base, and this base can cool off directional freeze device bottom.In the silicon liquid in the directional freeze device immerseable heating unit being arranged is graphite heating plate, is in liquid state with the silicon liquid that keeps being in contact with it always.
A kind of metallurgy method of using is produced solar energy polycrystalline silicon is produced polysilicon with the directional freeze device method, silicon liquid is packed into behind the directional freeze device, be the immerseable heating unit that graphite heating plate is put into silicon liquid bottom, then directional freeze device integral body is placed on the base bottom of directional freeze device is cooled off, and the graphite heating plate that slowly moves up, the silicon liquid of bottom in the directional freeze device is solidified gradually; The time of directional freeze is 8～15 hours, and the remaining silicon liquid in last directional freeze device top returns a purifying technique flow process and re-starts purification.
The above; only be the better embodiment of the present invention; these embodiments all are based on the different implementations under the general idea of the present invention; and protection scope of the present invention is not limited to this; anyly be familiar with those skilled in the art in the technical scope that the present invention discloses; the variation that can expect easily or replacement all should be encompassed within protection scope of the present invention.
Claims (8)
1. a metallurgy method is produced solar energy polycrystalline silicon directional freeze device, it is characterized in that, comprise: graphite heating plate, silicon nitride coating, the high-purity ground quartz coating, flame retardant coating, the insulation expanding layer, furnace shell and base, described furnace shell be arranged on base above, be provided with successively the insulation expanding layer in the furnace shell, flame retardant coating, high-purity ground quartz coating and silicon nitride coating, graphite heating plate is arranged on the top of furnace shell, be provided with the pipeline of ventilation or water flowing in the described base, base is provided with the pipe interface of ventilation or water flowing, be structure fully independently between described body of heater and black hot-plate and the base, can move and separate; The disconnected shell of described stove is steel structure, the thickness of furnace shell is 18～25mm, the material of described insulation expanding layer is the insulation fibre felt, the thickness of insulation expanding layer is 20～40mm, the material of described flame retardant coating is clay brick or high alumina brick, and the thickness of flame retardant coating is 65～100mm, and the thickness of described high-purity ground quartz coating is 5～10mm, the thickness of described silicon nitride coating is 2～5mm, and the capacity that described directional freeze device contains silicon liquid is 800～2000 kilograms.
2. production solar energy polycrystalline silicon directional freeze device according to claim 1 is characterized in that, described furnace shell is square structure or circular configuration.
3. production solar energy polycrystalline silicon directional freeze device according to claim 1 is characterized in that, the thickness of described furnace shell is 20mm.
4. production solar energy polycrystalline silicon directional freeze device according to claim 1 is characterized in that, the thickness of described insulation expanding layer is 30mm.
5. production solar energy polycrystalline silicon directional freeze device according to claim 1 is characterized in that, the thickness of described flame retardant coating is 80mm.
6. production solar energy polycrystalline silicon directional freeze device according to claim 1 is characterized in that, the thickness of described high-purity ground quartz coating is 7mm.
7. production solar energy polycrystalline silicon directional freeze device according to claim 1 is characterized in that, the thickness of described silicon nitride coating is 3mm.
8. a right to use requires the method that 1 described directional freeze device is produced polysilicon, it is characterized in that, silicon liquid is packed into behind the directional freeze device, graphite heating plate is put into silicon liquid bottom, then directional freeze device integral body is placed on the base bottom of directional freeze device is cooled off, and the graphite heating plate that slowly moves up, the silicon liquid of bottom in the directional freeze device is solidified gradually; The time of directional freeze is 8～15 hours, and the remaining silicon liquid in last directional freeze device top returns a purifying technique flow process and re-starts purification.
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| CN2012101156535A CN102862986A (en) | 2012-04-19 | 2012-04-19 | Directional coagulator for producing solar polycrystalline silicon by metallurgical method and method for producing polycrystalline silicon |
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| CN2012101156535A CN102862986A (en) | 2012-04-19 | 2012-04-19 | Directional coagulator for producing solar polycrystalline silicon by metallurgical method and method for producing polycrystalline silicon |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103954112A (en) * | 2014-04-23 | 2014-07-30 | 黄冈市华窑中启窑炉科技有限公司 | Production process and curing drying equipment for solar polycrystalline silicon quartz crucible |
| CN107513762A (en) * | 2016-06-16 | 2017-12-26 | 陕西盛华冶化有限公司 | A kind of metal-silicon furnace directional solidification reactor and pouring procedure |
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| DE3802531A1 (en) * | 1988-01-28 | 1989-08-17 | Siemens Ag | Process for separating solid particles from silicon melts |
| CN101370968A (en) * | 2006-01-12 | 2009-02-18 | 维苏威克鲁斯布公司 | Crucible for treating molten silicon |
| CN102191542A (en) * | 2011-04-29 | 2011-09-21 | 张森 | Equipment and method for preparing high-purity directionally crystallized polysilicon |
| CN102268724A (en) * | 2011-07-28 | 2011-12-07 | 英利能源（中国）有限公司 | Polycrystalline silicon ingot and manufacturing method thereof as well as solar cell |
| CN202181216U (en) * | 2011-06-09 | 2012-04-04 | 宁夏银星多晶硅有限责任公司 | Energy-saving device for directional solidification and edulcoration of metalluragical silicon |
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2012
- 2012-04-19 CN CN2012101156535A patent/CN102862986A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3802531A1 (en) * | 1988-01-28 | 1989-08-17 | Siemens Ag | Process for separating solid particles from silicon melts |
| CN101370968A (en) * | 2006-01-12 | 2009-02-18 | 维苏威克鲁斯布公司 | Crucible for treating molten silicon |
| CN102191542A (en) * | 2011-04-29 | 2011-09-21 | 张森 | Equipment and method for preparing high-purity directionally crystallized polysilicon |
| CN202181216U (en) * | 2011-06-09 | 2012-04-04 | 宁夏银星多晶硅有限责任公司 | Energy-saving device for directional solidification and edulcoration of metalluragical silicon |
| CN102268724A (en) * | 2011-07-28 | 2011-12-07 | 英利能源（中国）有限公司 | Polycrystalline silicon ingot and manufacturing method thereof as well as solar cell |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103954112A (en) * | 2014-04-23 | 2014-07-30 | 黄冈市华窑中启窑炉科技有限公司 | Production process and curing drying equipment for solar polycrystalline silicon quartz crucible |
| CN107513762A (en) * | 2016-06-16 | 2017-12-26 | 陕西盛华冶化有限公司 | A kind of metal-silicon furnace directional solidification reactor and pouring procedure |
| CN107513762B (en) * | 2016-06-16 | 2024-01-09 | 陕西盛华冶化有限公司 | Directional solidification reactor of industrial silicon electric furnace and casting method |
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