CN112030227A - Thermal field structure of polycrystalline silicon ingot furnace - Google Patents
Thermal field structure of polycrystalline silicon ingot furnace Download PDFInfo
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- CN112030227A CN112030227A CN201910400635.3A CN201910400635A CN112030227A CN 112030227 A CN112030227 A CN 112030227A CN 201910400635 A CN201910400635 A CN 201910400635A CN 112030227 A CN112030227 A CN 112030227A
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- heat insulation
- graphite crucible
- furnace body
- emissivity
- crucible
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B28/00—Production of homogeneous polycrystalline material with defined structure
- C30B28/04—Production of homogeneous polycrystalline material with defined structure from liquids
- C30B28/06—Production of homogeneous polycrystalline material with defined structure from liquids by normal freezing or freezing under temperature gradient
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
Abstract
The invention relates to a thermal field structure of a polycrystalline silicon ingot furnace, which comprises an upper furnace body and a lower furnace body, wherein a side heat insulation cage and an upper heat insulation plate are arranged in the upper furnace body, a bottom heat insulation plate and a heat exchange block are arranged in the lower furnace body, a quartz crucible filled with silicon raw materials is placed in a graphite crucible, the graphite crucible is placed on the heat exchange block, heaters are arranged above and on the side of the graphite crucible, and the heaters are controlled by the same power supply. The side heat insulation cage is close to an alloy plate with low high-temperature-resistant emissivity of the heater side device, and a coating with high-temperature-resistant emissivity is coated on the surface of the outer side of the graphite crucible. When heating, the side heat insulation cage, the bottom heat insulation plate and the upper heat insulation plate form a closed cavity; when the silicon crystal grows, the side heat insulation cage slowly rises and is separated from the bottom heat insulation plate. The invention can shorten the melting time and reduce the energy consumption in the process of melting the polycrystalline silicon material, can avoid the side nucleation and crystal growth of the crucible when the polycrystalline silicon grows, reduces the crystal defects and improves the conversion efficiency of the battery.
Description
The invention belongs to the field of solar photovoltaic industry, and relates to a thermal field structure of a polycrystalline silicon ingot furnace.
Background
In the existing polycrystalline silicon ingot casting process, because the temperature of the inner side of the quartz crucible is lower than the temperature of silicon liquid, the silicon nucleates on the side of the quartz crucible, crystals grow from the side wall of the quartz crucible, the crystal direction of the crystal grown from the nucleation of the side wall of the crucible is inconsistent with the crystal direction of the crystal grown from the bottom of the crucible, and therefore the crystal boundary and dislocation density in the silicon ingot are increased, the phenomenon that the crystal boundary can be reduced due to the nucleation of the side wall of the crucible is effectively avoided, the dislocation density in the crystal is reduced, and the quality of the silicon ingot and the performance of.
In addition, the cost and energy consumption need to be reduced in the existing photovoltaic industry, one way is to shorten the silicon material melting time under the same power setting condition, and how to shorten the time is also closely related to the thermal field structure.
Therefore, the reasonable modification of the thermal field structure can avoid the nucleation of the side wall of the crucible, shorten the melting time of the silicon material and reduce the energy consumption, which has important significance in the field.
Disclosure of Invention
In view of the defects of the prior art, the invention aims to provide a thermal field structure of a polycrystalline silicon ingot furnace, which is used for solving the problems of sidewall nucleation, poor ingot quality and high energy consumption in the prior art.
In order to solve the technical problems, the invention is realized by the following technical scheme:
the utility model provides a polycrystalline silicon ingot furnace thermal field structure, has last furnace body, lower furnace body, is provided with side heat-insulating cage and last heated board in going up the furnace body, is provided with end heated board, heat exchange block in the lower furnace body, and the quartz crucible that is equipped with the silicon raw materials is placed in graphite crucible, and graphite crucible arranges in on the heat exchange block, and graphite crucible top and side all are provided with the heater, and the heater receives same power control. The side heat insulation cage is close to an alloy plate with low high-temperature resistance and low emissivity of the heater side device, the emissivity of the alloy plate is 0.2-0.5, the thickness of the alloy plate is 1-2 mm, and the alloy plate is stable in chemical property and does not react with carbon in an argon environment at the temperature of 1600 ℃. The outer surface of the graphite crucible is coated with a coating with high temperature resistance and high emissivity. The coating emissivity of the graphite crucible is 0.9-0.95, the thickness of the graphite crucible is 80-90 mu m, and the graphite crucible has stable chemical properties and does not react with carbon in an argon environment at the temperature of 1600 ℃.
Compared with the prior art, the invention has the advantages that: according to the invention, the alloy plate with low emissivity is arranged on the side of the side heat insulation cage close to the heater, and the high-temperature-resistant coating with high emissivity is coated on the outer side of the graphite crucible, so that the radiation heat exchange between the graphite crucible and the heater can be increased, and meanwhile, the heat insulation effect of the side heat insulation cage is enhanced by reflecting part of radiation heat through the alloy plate. On the other hand, the temperature of the inner side of the crucible is higher than that of the silicon liquid, and silicon cannot nucleate and grow from the crucible, so that the grain boundary is reduced, the dislocation density in the crystal is reduced, and the quality of the silicon ingot and the performance of the crystalline silicon battery piece are improved.
Drawings
The invention will be further explained with reference to the drawings.
FIG. 1 is a schematic diagram of the present invention.
Wherein: 1. the furnace comprises an upper furnace body, 2. an upper heat insulation plate, 3. a heater, 4. a side heat insulation cage, 5. a lower furnace body, 6. a bottom heat insulation plate, 7. a heat exchange block, 8. a silicon material, 9. a graphite crucible, 10. a quartz crucible, 11. a coating and 12. an alloy plate
Detailed Description
The following examples are intended to further illustrate the invention without limiting it.
The thermal field structure of the polycrystalline silicon ingot furnace is provided with an upper furnace body (1) and a lower furnace body (5), wherein a side heat insulation cage (4) and an upper heat insulation plate (2) are arranged in the upper furnace body (1), a bottom heat insulation plate (6) and a heat exchange block (7) are arranged in the lower furnace body (5), a quartz crucible (10) filled with silicon materials (8) is placed in a graphite crucible (9), the graphite crucible (9) is placed on the heat exchange block, heaters (3) are arranged above and on the side of the graphite crucible (9), and the heaters (3) are controlled by the same power supply. The side heat insulation cage (4) is close to the alloy plate (12) with low high-temperature resistance emissivity arranged on the side of the heater (3), the emissivity of the alloy plate (12) is 0.2-0.5, the thickness of the alloy plate is 1-2 mm, and the alloy plate is stable in chemical property and does not react with carbon in an argon environment with the temperature of 1600 ℃. The outer side surface of the graphite crucible is coated with a coating (11) with high-temperature-resistant emissivity, the emissivity of the coating (11) is 0.9-0.95, the thickness of the coating is 80-90 mu m, and the coating is stable in chemical property and does not react with carbon in an argon environment at the temperature of 1600 ℃.
The installation and use process of the invention is as follows:
an alloy plate (12) is arranged on the side of the side heat insulation cage (4) close to the heater, and a high-temperature-resistant high-emissivity coating (11) is uniformly coated on the outer side of the graphite crucible (9). Firstly, opening an ingot furnace, laying a certain amount of polycrystalline seed crystals at the bottom of a quartz crucible, then putting a silicon material (8), putting the quartz crucible (10) into a graphite crucible (9) device, and putting the graphite crucible (9) on a heat exchange block (7).
Then the ingot furnace is closed, the upper heat insulation plate (2), the side heat insulation cage (4) and the bottom heat insulation plate (6) are closed to form a closed space, the heater (3), the heat exchange block (7), the graphite crucible (9), the quartz crucible (10) and the silicon material (8) are wrapped in the closed space, as shown in figure 1, the heater (3) starts to work, the temperature of the heat insulation cage is raised to be more than 1500 ℃, and the silicon material (8) starts to be melted. Because the temperature in the furnace is very high, the heat transfer mode in the furnace mainly depends on radiation heat exchange and heat conduction. In the invention, the surface emissivity of the side heat insulation cage (4) of the ingot furnace is low, and the heat conductivity is low, so that the heat dissipated outwards through the side heat insulation cage (4) is little. The surface emissivity of the graphite crucible (9) is very high, so compared with the graphite crucible with low surface emissivity, the graphite crucible has more radiant heat exchange quantity with the heater, and more heat is transferred to the silicon material through the graphite crucible, so the melting time of the silicon material is shorter, and the energy consumption is reduced.
And when the silicon material (8) is melted to the seed crystal laying height, the side heat insulation cage (4) is slowly lifted upwards and separated from the bottom heat insulation plate (6). Because the bottom temperature of the heat exchange block (7) is about 1420 ℃, and the furnace shell is provided with circulating water to continuously take away heat, the temperature is about room temperature. Therefore, after the side heat insulation cage (4) is separated from the bottom heat insulation plate (6), violent radiation heat exchange is carried out between the heat exchange block (7) and the furnace shell, the temperature of the seed crystals is reduced under the action of heat conduction, and the silicon liquid begins to crystallize above the seed crystals into silicon crystals which grow vertically upwards from the upper part of the seed crystals. Because the alloy plate (12) with low surface emissivity is arranged on the inner side of the side heat insulation cage (4), the surface emissivity of the outer side of the graphite crucible (9) is high, and under the action of radiation heat transfer and heat conduction, the quartz crucible can obtain more heat, so that the temperature of the silicon liquid side of the quartz crucible is higher than that of the silicon liquid, the silicon liquid cannot form nuclei and grow crystals on the side of the quartz crucible, the dislocation density of ingot casting polycrystal is reduced, and the quality of silicon ingots is improved.
Therefore, the invention can effectively reduce the melting time of the silicon material, reduce the energy consumption, effectively avoid the nucleation of the side wall of the crucible, reduce the crystal defect and improve the conversion efficiency of the battery.
Claims (3)
1. The utility model provides a polycrystalline silicon ingot furnace thermal field structure, has last furnace body, lower furnace body, goes up and is provided with side heat insulation cage and last heated board in the furnace body, is provided with end heated board, heat exchange block in the lower furnace body, and the quartz crucible who is equipped with the silicon raw materials is placed in graphite crucible, and graphite crucible arranges in on the heat exchange block, and graphite crucible top and side all are provided with the heater, and the heater receives same power control, its characterized in that: the side heat insulation cage is close to an alloy plate with low high-temperature-resistant emissivity of the heater side device, and a coating with high-temperature-resistant emissivity is coated on the surface of the outer side of the graphite crucible.
2. The polysilicon ingot furnace of claim 1, wherein: the emissivity of the alloy plate of the side heat insulation cage close to the heater is 0.2-0.5, the thickness of the alloy plate is 1-2 mm, and the alloy plate is stable in chemical property and does not react with carbon in an argon environment at the temperature of 1600 ℃.
3. The polysilicon ingot furnace of claim 1, wherein: the emissivity of the coating on the outer side of the graphite crucible is 0.9-0.95, the thickness of the coating is 80-90 microns, and the coating is stable in chemical property and does not react with carbon in an argon environment at the temperature of 1600 ℃.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201910400635.3A CN112030227A (en) | 2019-05-15 | 2019-05-15 | Thermal field structure of polycrystalline silicon ingot furnace |
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| CN201910400635.3A CN112030227A (en) | 2019-05-15 | 2019-05-15 | Thermal field structure of polycrystalline silicon ingot furnace |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0887442A1 (en) * | 1997-06-23 | 1998-12-30 | Sharp Kabushiki Kaisha | Process and apparatus for producing polycrystalline semiconductor ingot |
| CN203174222U (en) * | 2013-03-28 | 2013-09-04 | 江苏协鑫硅材料科技发展有限公司 | Thermal field structure of polycrystalline silicon ingot casting furnace |
| CN205529143U (en) * | 2016-04-29 | 2016-08-31 | 晶科能源有限公司 | Polycrystalline silicon ingot furnace and be applied to device in polycrystalline silicon ingot furnace |
| CN107059075A (en) * | 2017-01-24 | 2017-08-18 | 江苏协鑫软控设备科技发展有限公司 | The plating solution and coating and polycrystalline silicon ingot or purifying furnace of amorphous nickel tungsten-molybdenum alloy |
| CN207498519U (en) * | 2017-11-30 | 2018-06-15 | 河南省博宇新能源有限公司 | Polycrystal silicon ingot ingot furnace inner-cavity structure |
-
2019
- 2019-05-15 CN CN201910400635.3A patent/CN112030227A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0887442A1 (en) * | 1997-06-23 | 1998-12-30 | Sharp Kabushiki Kaisha | Process and apparatus for producing polycrystalline semiconductor ingot |
| CN203174222U (en) * | 2013-03-28 | 2013-09-04 | 江苏协鑫硅材料科技发展有限公司 | Thermal field structure of polycrystalline silicon ingot casting furnace |
| CN205529143U (en) * | 2016-04-29 | 2016-08-31 | 晶科能源有限公司 | Polycrystalline silicon ingot furnace and be applied to device in polycrystalline silicon ingot furnace |
| CN107059075A (en) * | 2017-01-24 | 2017-08-18 | 江苏协鑫软控设备科技发展有限公司 | The plating solution and coating and polycrystalline silicon ingot or purifying furnace of amorphous nickel tungsten-molybdenum alloy |
| CN207498519U (en) * | 2017-11-30 | 2018-06-15 | 河南省博宇新能源有限公司 | Polycrystal silicon ingot ingot furnace inner-cavity structure |
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Application publication date: 20201204 |