CN112853471A - Single crystal furnace for processing photovoltaic cell - Google Patents

Single crystal furnace for processing photovoltaic cell Download PDF

Info

Publication number
CN112853471A
CN112853471A CN202110058026.1A CN202110058026A CN112853471A CN 112853471 A CN112853471 A CN 112853471A CN 202110058026 A CN202110058026 A CN 202110058026A CN 112853471 A CN112853471 A CN 112853471A
Authority
CN
China
Prior art keywords
single crystal
crucible
crystal furnace
furnace body
thread
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202110058026.1A
Other languages
Chinese (zh)
Inventor
何燕芳
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Guangzhou Huangbiao Technology Co ltd
Original Assignee
Guangzhou Huangbiao Technology Co ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Guangzhou Huangbiao Technology Co ltd filed Critical Guangzhou Huangbiao Technology Co ltd
Priority to CN202110058026.1A priority Critical patent/CN112853471A/en
Publication of CN112853471A publication Critical patent/CN112853471A/en
Pending legal-status Critical Current

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10—Crucibles or containers for supporting the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

The invention relates to the technical field of single crystal furnaces and discloses a single crystal furnace for processing a photovoltaic cell. This single crystal growing furnace and system silicon method for photovoltaic cell processing, the threaded rod has been cup jointed through the inside activity of crucible support column, the threaded rod rotates during the use, make can drive the sealed pad of crucible and reciprocate, the sealed pad of crucible coincides each other with the inside of crucible support column simultaneously, make and increase the leakproofness, rotate the threaded rod simultaneously, when driving the sealed pad of crucible and move down, make and drive the silicon solution and move down, make and avoid the phenomenon that the silicon solution spills out, the sealed pad of crucible lasts upwards to promote during later stage use, make and drive subsequent silicon and crystallize, make the practicality when increasing the device and using.

Description

Single crystal furnace for processing photovoltaic cell
Technical Field
The invention relates to the technical field of single crystal furnaces, in particular to a single crystal furnace for processing a photovoltaic cell.
Background
In the process of processing photovoltaic cells, silicon is required to be used, and silicon is often extracted by using a single crystal furnace in the process of processing and extracting the silicon, for example, the Chinese utility model patent CN210711820U discloses a single crystal furnace fault alarm device, which comprises a crucible and a tray, wherein the upper surface of the tray is provided with a groove, the crucible is arranged on the groove, the groove is of a conical structure, the middle position in the tray is provided with a cavity, the middle position in the bottom surface of the groove is provided with a leak hole communicated with the cavity, the side wall of the cavity is provided with an annular spherical groove, the spherical groove is connected with a rolling ball in a rolling way, the inside of the tray is also provided with a collecting cavity, the lower end of the cavity is communicated with the central position of the upper wall of the collecting cavity, the bottom surface of the tray is provided with a discharge opening communicated with the collecting cavity, the utility model relates to the technical, the single crystal furnace fault alarm device can alarm crucible leakage in time and guide the leakage, so that high-temperature silicon liquid is prevented from overflowing to damage electric devices in a furnace body;
above-mentioned current single crystal growing furnace adds man-hour to silicon, place at the silicon raw materials and melt the in-process, the existence can place more too much problem with the silicon raw materials, make the phenomenon that can come out after driving the silicon and melting, make the problem of causing the damage to the inside of single crystal growing furnace body and the outer wall of crucible, and because common graphite heater fixes in the inside of single crystal growing furnace body, make the technical problem who is difficult to dismantle when graphite heater damages, for this reason, we provide a single crystal growing furnace and system silicon method for photovoltaic cell processing, with the technical problem who exists among the prior art of partial solution at least.
Disclosure of Invention
Aiming at the defects of the existing single crystal furnace and silicon preparation method for photovoltaic cell processing, the invention provides the single crystal furnace and the silicon preparation method for photovoltaic cell processing, which have the advantages of conveniently fixing and disassembling the inside of the device and reducing overflow of a silicon solution during melting, and solve the problems in the background technology.
The invention provides the following technical scheme: a single crystal furnace for processing a photovoltaic cell comprises a supporting base, wherein a supporting seat is fixedly connected to the upper part of the supporting base, a single crystal furnace body is fixedly connected to the upper part of the middle part of the supporting seat, bolts are installed inside one side of the supporting seat, lower air outlet clamping sleeves are installed on two sides of the lower part of the single crystal furnace body, a crucible supporting column is fixedly connected to the middle part of the upper part of the supporting base, a crucible is fixedly connected to the upper part of the crucible supporting column, a threaded rod is fixedly sleeved on the inner thread of the crucible supporting column, a crucible sealing gasket is movably sleeved on the upper part of the threaded rod, a bottom supporting frame is installed inside the bottom of the single crystal furnace body, a protective plate is fixedly connected to the upper part of the bottom supporting frame, a graphite heater is fixedly connected to the inner side, the upper wall of the single crystal furnace body is fixedly connected with a clamping protective sleeve, the upper part of the single crystal furnace body is fixedly sleeved with an upper lifting jacket in a threaded manner, the middle part of the upper lifting jacket is fixedly connected with a motor, the lower part of the motor is provided with the threaded jacket, a threaded pad is movably sleeved in the threaded jacket, a rhombic clamping column is movably sleeved in the lower part of the threaded pad, and a seed crystal is fixedly connected to the lower part of the rhombic clamping column.
Preferably, the bolt passes the outside of supporting base and supporting seat, the outside thread tightening on bolt upper portion has cup jointed the nut, support and install four bolts between base and the supporting seat, the mid-mounting of supporting the base has the convex plate, the relief plate is parallel with the upper surface of supporting seat.
Preferably, the upper portion of the crucible is provided with a circular groove, a silicon wafer is placed inside the crucible, the crucible supporting column is internally provided with a thread, and the upper portion of the crucible sealing gasket is in contact with the bottom of the crucible.
Preferably, a circular overturning threaded sleeve is mounted outside the lower air outlet jacket, and the overturning threaded sleeve outside the lower air outlet jacket is fixedly sleeved with one side of the lower part of the single crystal furnace body through threads.
Preferably, the fastening bolt penetrates through the single crystal furnace body, the thread is fixedly sleeved inside the outer side of the protection plate, and the bottom support frame is movably sleeved inside the lower portion of the single crystal furnace body.
Preferably, the thread pad is provided with threads on the outer portion thereof, the thread pad is in threaded fixed sleeve connection with the inner portion of the thread clamping sleeve, the outer portion of the rhombic clamping column is in a rhombic shape, the lower portion of the inner portion of the upper lifting clamping sleeve is provided with a rhombic baffle, and the rhombic clamping column is clamped in the rhombic groove.
A silicon preparation method of a single crystal furnace for processing a photovoltaic cell comprises the following steps:
s1: placing a silicon raw material in a crucible, and simultaneously rotating a threaded rod to drive a crucible sealing gasket to move downwards;
s2: sequentially penetrating a lower gas outlet jacket through the single crystal furnace body and the inner part of one side of the lower part of the bottom support frame, and simultaneously rotating the lower gas outlet jacket to drive the lower gas outlet jacket to be fixedly sleeved on the lower part of the single crystal furnace body in a threaded manner;
s3: starting a graphite heater to heat the silicon raw material in the crucible so as to melt the silicon raw material to a liquid state, and starting the circulating exhaust function of the lower air outlet jacket and the upper air outlet hole of the device;
s4: the motor is started, so that the driving thread clamping sleeve rotates, the thread clamping sleeve drives the thread pads to perform thread motion, the diamond clamping column is clamped inside the upper lifting clamping sleeve, the rotation cannot be performed, the diamond clamping column can be driven to move up and down, meanwhile, the lower portion of the seed crystal is controlled to be in contact with silicon solution inside the crucible, silicon crystals are formed, meanwhile, the silicon crystals are pulled downwards slowly, the silicon crystals are driven to move upwards slowly, meanwhile, when the silicon crystals are melted, the solution is moved downwards through the rotating threaded rod, the silicon crystals can be driven to sink, and splashing is avoided.
According to the technical scheme of the invention, compared with the prior art, the invention has the following beneficial effects:
1. this single crystal growing furnace and system silicon method for photovoltaic cell processing, the threaded rod has been cup jointed through the inside activity of crucible support column, the threaded rod rotates during the use, make can drive the sealed pad of crucible and reciprocate, the sealed pad of crucible coincides each other with the inside of crucible support column simultaneously, make and increase the leakproofness, rotate the threaded rod simultaneously, when driving the sealed pad of crucible and move down, make and drive the silicon solution and move down, make and avoid the phenomenon that the silicon solution spills out, the sealed pad of crucible lasts upwards to promote during later stage use, make and drive subsequent silicon and crystallize, make the practicality when increasing the device and using.
2. This single crystal growing furnace and system silicon method for photovoltaic cell processing, through with the bottom sprag frame joint between the lower part of single crystal growing furnace body and support base, make the centre gripping through device single crystal growing furnace body and support base can fix the bottom sprag frame, pass the single crystal growing furnace body with device fastening bolt simultaneously, make and drive and carry out the screw thread fastening cup joint between fastening bolt and the guard plate, make and fix the position of guard plate, when device support base and single crystal growing furnace body separation simultaneously, through not hard up fastening bolt, can drive the effect that the device guard plate carries out the split, make the convenience that increases the device when using carry out the effect of split to inside article.
Drawings
FIG. 1 is a schematic cross-sectional view of the structure of the present invention;
FIG. 2 is a schematic front view of the structure of the present invention.
In the figure: 1. a support base; 2. a supporting seat; 3. a single crystal furnace body; 4. a bolt; 5. a lower air outlet jacket; 6. a crucible supporting column; 7. a crucible; 8. a threaded rod; 9. a crucible sealing gasket; 10. a bottom support frame; 11. a protection plate; 12. a graphite heater; 13. fastening a bolt; 14. an upper air outlet; 15. clamping a protective sleeve; 16. an upper lifting jacket; 17. a motor; 18. a threaded jacket; 19. a threaded pad; 20. a diamond-shaped clamping column; 21. and (5) a seed crystal.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Referring to fig. 1-2, a single crystal furnace for photovoltaic cell processing includes a supporting base 1, a supporting base 2 fixedly connected to the upper portion of the supporting base 1, a single crystal furnace body 3 fixedly connected to the upper portion of the middle portion of the supporting base 2, a bolt 4 installed inside one side of the supporting base 2, a lower gas outlet jacket 5 installed on both sides of the lower portion of the single crystal furnace body 3, a crucible supporting column 6 fixedly connected to the middle portion of the upper portion of the supporting base 1, a crucible 7 fixedly connected to the upper portion of the crucible supporting column 6, a threaded rod 8 fixedly sleeved to the internal thread of the crucible supporting column 6, a crucible sealing gasket 9 movably sleeved to the upper portion of the threaded rod 8, a bottom supporting frame 10 installed inside the bottom of the single crystal furnace body 3, a protection plate 11 fixedly connected to the upper portion of the bottom supporting frame 10, a, an upper air outlet 14 is formed in each of two sides of the upper portion of the single crystal furnace body 3, a clamping and protecting sleeve 15 is fixedly connected to the upper wall of the single crystal furnace body 3, an upper lifting jacket 16 is fixedly sleeved on the upper portion of the single crystal furnace body 3 in a threaded manner, a motor 17 is fixedly connected to the middle of the upper portion of the upper lifting jacket 16, a threaded jacket 18 is installed on the lower portion of the motor 17, a threaded pad 19 is sleeved on the inner portion of the threaded jacket 18 in a movable manner, a diamond-shaped clamping column 20 is sleeved on the lower portion of the threaded pad 19 in a movable manner, and.
Wherein, bolt 4 passes the outside of supporting base 1 and supporting seat 2, the outside thread tightening on bolt 4 upper portion has cup jointed the nut, support and install four bolts 4 between base 1 and the supporting seat 2, the mid-mounting that supports base 1 has the flange, the relief block is parallel with the upper surface of supporting seat 2, support and install four bolts 4 between base 1 and the supporting seat 2 through installing the device, make to drive under bolt 4 drives, can be to supporting and sealing between base 1 and the supporting seat 2 fixedly, the middle part joint on device support base 1 upper portion is in the inside of supporting seat 2 simultaneously, make the leakproofness when multiplicable device uses.
Wherein, the upper part of the crucible 7 is provided with a circular groove, a silicon chip is placed in the crucible 7, the inside of the crucible supporting column 6 is provided with a thread, the upper part of the crucible sealing gasket 9 is contacted with the bottom of the crucible 7, the phenomenon that the silicon raw material is more placed in the melting process exists, the phenomenon that the silicon is driven to overflow after melting is caused, the phenomenon that the inner part of the single crystal furnace body 3 and the outer wall of the crucible 7 are damaged is caused, a threaded rod 8 is movably sleeved in the crucible supporting column 6, when the crucible sealing gasket is used, the threaded rod 8 is rotated, the crucible sealing gasket 9 can be driven to move up and down, meanwhile, the crucible sealing gasket 9 and the inner part of the crucible supporting column 6 are mutually overlapped, the sealing performance is improved, the threaded rod 8 is rotated at the same time, when the crucible sealing gasket 9 is driven to move down, the silicon, the phenomenon of avoiding overflowing is makeed, and there is solution to last the decline after the inside solution crystallization of crucible 7 in later stage, rotatable threaded rod 8 simultaneously, makes the sealed 9 rebound of promotion crucible, makes and drives the sealed 9 solution of crucible and last the rebound to the inside solution of threaded rod 8, makes the solution that can drive the bottom continuously carry out the crystallization process, and simultaneously after the inside solution crystallization process of crucible 7, but the whole feasible silicon piece that can add again of opening device is to the inside of crucible 7.
Wherein, the externally mounted of the lower part is given vent to anger and is pressed from both sides the thread bush of the circular upset of cover 5, the thread bush of the outside upset of cover 5 is given vent to anger in the lower part cup joints through 3 lower part activities of single crystal growing furnace body with one side thread tightening of single crystal growing furnace body lower part and is cup jointed and give vent to anger the cover 5 through having the lower part, the thread bush of upset is installed to the tip in the clamp 5 outside is given vent to anger in the lower part simultaneously, make can drive the lower part with single crystal growing furnace body 3 through the thread bush and carry out the thread tightening, make convenience and leakproofness when multiplicable device lower part is given vent to anger and is pressed from both sides the cover 5 installation, the.
Wherein, the fastening bolt 13 passes through the single crystal furnace body 3 and is fixedly sleeved in the outer side of the protection plate 11 by screw thread, the bottom support frame 10 is movably sleeved in the lower part of the single crystal furnace body 3, the common graphite heater 12 is fixed in the single crystal furnace body 3, so that the phenomenon of difficult disassembly exists when the graphite heater 12 is damaged, the bottom support frame 10 is clamped between the lower part of the single crystal furnace body 3 and the support base 1, the bottom support frame 10 can be fixed by clamping the single crystal furnace body 3 and the support base 1, meanwhile, the fastening bolt 13 passes through the single crystal furnace body 3, so that the fastening bolt 13 is driven to be fixedly sleeved with the protection plate 11 by screw thread, the position of the protection plate 11 can be fixed, and meanwhile, when the support base 1 is separated from the single crystal furnace body 3, the fastening bolt 13 is loosened, can drive device guard plate 11 and carry out the effect of split for increase the convenience of device and carry out the effect of split to inside article when using.
Wherein, the outside of screw thread pad 19 is seted up threadedly, screw thread pad 19 cup joints with the inside mutual thread tightening of screw thread clamp cover 18, the outside of rhombus centre gripping post 20 becomes the rhombus, the inside lower part that upper portion promoted clamp cover 16 has seted up the rhombus baffle, rhombus centre gripping post 20 joint is in the inside of rhombus recess, through starter motor 17, make and to drive screw thread clamp cover 18 and rotate, screw thread clamp cover 18 drives and carries out the screw motion between the screw thread pad 19 simultaneously, simultaneously device rhombus centre gripping post 20 joint is unable to rotate in the inside that upper portion promoted clamp cover 16, make and to keep the stability of rhombus centre gripping post 20, device screw thread pad 19 rotates the in-process and can drive device screw thread pad 19 and reciprocate simultaneously, make and to adjust the position of seed crystal 21, make the convenience when increasing the device.
A silicon preparation method of a single crystal furnace for processing a photovoltaic cell comprises the following steps:
s1: placing a silicon raw material in a crucible 7, and simultaneously rotating a threaded rod 8 to drive a crucible sealing gasket 9 to move downwards;
s2: sequentially penetrating the lower gas outlet jacket 5 through the inside of the single crystal furnace body 3 and one side of the lower part of the bottom support frame 10, and simultaneously rotating the lower gas outlet jacket 5 to drive the lower gas outlet jacket 5 to be fixedly sleeved on the lower part of the single crystal furnace body 3 in a threaded manner;
s3: starting the graphite heater 12 to heat the silicon raw material in the crucible 7, so as to melt the silicon raw material to a liquid state, and starting the circulating exhaust function of the lower gas outlet jacket 5 and the upper gas outlet 14 of the device;
s4: starting motor 17, make to drive screw clamp cover 18 and rotate, screw clamp cover 18 drives and carries out the screw motion between the thread pad 19, rhombus centre gripping post 20 joint promotes the inside of pressing from both sides cover 16 on upper portion simultaneously, make unable the rotation, make and to drive rhombus centre gripping post 20 and reciprocate, the lower part of simultaneous control seed crystal 21 contacts with the inside silicon solution of crucible 7, make and form the silicon crystallization, the while is the slow lapse, make and drive the slow rebound of silicon, simultaneously when melting, when solution is more, through rotating threaded rod 8 lapse, make and to drive the silicon and sink, make and avoid the spill.
Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that changes, modifications, substitutions and alterations can be made in these embodiments without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents.

Claims (6)

1. The utility model provides a single crystal growing furnace is used in photovoltaic cell processing, includes support base (1), its characterized in that: the upper part of the supporting base (1) is fixedly connected with a supporting seat (2), the upper part of the middle part of the supporting seat (2) is fixedly connected with a single crystal furnace body (3), a bolt (4) is arranged inside one side of the supporting seat (2), a lower air outlet jacket (5) is arranged on two sides of the lower part of the single crystal furnace body (3), a crucible supporting column (6) is fixedly connected with the middle part of the upper part of the supporting base (1), a crucible (7) is fixedly connected with the upper part of the crucible supporting column (6), a threaded rod (8) is fixedly sleeved on the inner thread of the crucible supporting column (6), a crucible sealing gasket (9) is movably sleeved on the upper part of the threaded rod (8), a bottom supporting frame (10) is arranged inside the bottom of the single crystal furnace body (3), and a, the inner side of the protection plate (11) is fixedly connected with a graphite heater (12), the outer part of the protection plate (11) is movably sleeved with a fastening bolt (13), both sides of the upper part of the single crystal furnace body (3) are provided with upper air outlet holes (14), the upper wall of the single crystal furnace body (3) is fixedly connected with a clamping protective sleeve (15), an upper lifting jacket (16) is fixedly sleeved on the upper part of the single crystal furnace body (3) through threads, the middle part of the upper part lifting jacket (16) is fixedly connected with a motor (17), the lower part of the motor (17) is provided with a thread jacket (18), a thread pad (19) is movably sleeved in the thread jacket (18), the lower part of the threaded pad (19) is movably sleeved with a diamond-shaped clamping column (20), the lower part of the rhombic clamping column (20) is fixedly connected with a seed crystal (21).
2. The single crystal furnace for processing the photovoltaic cell as claimed in claim 1, wherein: bolt (4) pass the outside of supporting base (1) and supporting seat (2), the outside thread tightening on bolt (4) upper portion has cup jointed the nut, support and install four bolt (4) between base (1) and supporting seat (2), the mid-mounting that supports base (1) has the flange, the upper surface parallel of relief printing and supporting seat (2).
3. The single crystal furnace for processing the photovoltaic cell as claimed in claim 1, wherein: the crucible support is characterized in that a circular groove is formed in the upper portion of the crucible (7), a silicon wafer is placed inside the crucible (7), a thread is formed in the crucible support column (6), and the upper portion of the crucible sealing gasket (9) is in contact with the bottom of the crucible (7).
4. The single crystal furnace for processing the photovoltaic cell as claimed in claim 1, wherein: the outer part of the lower gas outlet jacket (5) is provided with a circular overturning threaded sleeve, and the external overturning threaded sleeve of the lower gas outlet jacket (5) is fixedly sleeved with one side of the lower part of the single crystal furnace body (3) through threads.
5. The single crystal furnace for processing the photovoltaic cell as claimed in claim 1, wherein: the fastening bolt (13) penetrates through the single crystal furnace body (3) and is fixedly sleeved in the outer side of the protection plate (11) in a threaded mode, and the bottom support frame (10) is movably sleeved in the lower portion of the single crystal furnace body (3).
6. The single crystal furnace for processing the photovoltaic cell as claimed in claim 1, wherein: the thread is arranged on the outer portion of the thread pad (19), the thread pad (19) and the inner portion of the thread jacket (18) are in threaded fixed sleeving, the outer portion of the rhombic clamping column (20) is in a rhombic shape, the lower portion of the inner portion of the upper lifting jacket (16) is provided with a rhombic baffle, and the rhombic clamping column (20) is clamped in the rhombic groove.
CN202110058026.1A 2021-01-15 2021-01-15 Single crystal furnace for processing photovoltaic cell Pending CN112853471A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202110058026.1A CN112853471A (en) 2021-01-15 2021-01-15 Single crystal furnace for processing photovoltaic cell

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202110058026.1A CN112853471A (en) 2021-01-15 2021-01-15 Single crystal furnace for processing photovoltaic cell

Publications (1)

Publication Number Publication Date
CN112853471A true CN112853471A (en) 2021-05-28

Family

ID=76007140

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202110058026.1A Pending CN112853471A (en) 2021-01-15 2021-01-15 Single crystal furnace for processing photovoltaic cell

Country Status (1)

Country Link
CN (1) CN112853471A (en)

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3033660A (en) * 1959-05-05 1962-05-08 Philips Corp Method and apparatus for drawing crystals from a melt
CN203044868U (en) * 2012-12-28 2013-07-10 陈明广 Self-dismantling type magnesium and magnesium alloy energy-saving refining casting furnace
CN103925791A (en) * 2014-04-16 2014-07-16 嵩县开拓者钼业有限公司 Vacuum heating furnace
CN203893655U (en) * 2014-04-16 2014-10-22 嵩县开拓者钼业有限公司 Vacuum heating furnace
CN204251762U (en) * 2014-11-27 2015-04-08 乐山新天源太阳能科技有限公司 A kind of thermal field structure of single crystal furnace
CN209223141U (en) * 2018-11-05 2019-08-09 佛山市南海镕信金属制品有限公司 A kind of automatic die casting machine blanking system of pressure sensitive
CN210892715U (en) * 2019-07-29 2020-06-30 卜乐平 Slag removing device of hot-chamber die-casting totally-enclosed smelting furnace

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3033660A (en) * 1959-05-05 1962-05-08 Philips Corp Method and apparatus for drawing crystals from a melt
CN203044868U (en) * 2012-12-28 2013-07-10 陈明广 Self-dismantling type magnesium and magnesium alloy energy-saving refining casting furnace
CN103925791A (en) * 2014-04-16 2014-07-16 嵩县开拓者钼业有限公司 Vacuum heating furnace
CN203893655U (en) * 2014-04-16 2014-10-22 嵩县开拓者钼业有限公司 Vacuum heating furnace
CN204251762U (en) * 2014-11-27 2015-04-08 乐山新天源太阳能科技有限公司 A kind of thermal field structure of single crystal furnace
CN209223141U (en) * 2018-11-05 2019-08-09 佛山市南海镕信金属制品有限公司 A kind of automatic die casting machine blanking system of pressure sensitive
CN210892715U (en) * 2019-07-29 2020-06-30 卜乐平 Slag removing device of hot-chamber die-casting totally-enclosed smelting furnace

Similar Documents

Publication Publication Date Title
CN201881293U (en) Auxiliary elastic support with magnetic fixing effect
US7971836B2 (en) Supporting table having heaters inside crystal-growing furnace
CN112853471A (en) Single crystal furnace for processing photovoltaic cell
CN110453277A (en) A kind of Czochralski method mono-crystal furnace thermal field quickly cooling device and cooling means
CN112899773A (en) Silicon preparation method for processing photovoltaic cell
CN209850799U (en) Heat shield splitting device
US20220094299A1 (en) Dismantling device for frame of pv module
CN112725879A (en) Pulling-up Czochralski method monocrystalline silicon clamping mechanism and working method
CN116652644A (en) Clamping fixture for processing engine end cover
CN112408758B (en) Quartz tube expander
CN115287628A (en) Semiconductor diffusion furnace heat-preserving container and clamping device thereof
CN100570261C (en) Automatic positioning method and device between crucible and the crucible cleaning machine revolving drum
CN214162585U (en) Stainless steel plate grinding and polishing auxiliary clamp
CN221261290U (en) Lens reflux hot plate device
CN214641791U (en) Positioning fixture for machining
CN217965463U (en) Welding equipment for street lamp pole production and processing
CN218254177U (en) Radiator perforating device
CN216657365U (en) Deburring device for valve
CN213117761U (en) Novel rigid polyurethane spraying polyethylene winding prefabricated direct-buried heat preservation pipe
CN214054444U (en) Multifunctional radiator machining clamp
CN214503511U (en) Device for automatically detecting crystal orientation of single crystal silicon rod
CN112503060B (en) Oil temperature constant-temperature intelligent control system and installation method thereof
CN215236546U (en) Rotating base for cleaning steel cylinder
CN213340401U (en) Stripping off device is used in solar module production
CN211522373U (en) Quick melt device of single crystal growing furnace easy to assemble

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
WD01 Invention patent application deemed withdrawn after publication

Application publication date: 20210528

WD01 Invention patent application deemed withdrawn after publication