CN211522373U - Quick melt device of single crystal growing furnace easy to assemble - Google Patents

Quick melt device of single crystal growing furnace easy to assemble Download PDF

Info

Publication number
CN211522373U
CN211522373U CN201922060590.8U CN201922060590U CN211522373U CN 211522373 U CN211522373 U CN 211522373U CN 201922060590 U CN201922060590 U CN 201922060590U CN 211522373 U CN211522373 U CN 211522373U
Authority
CN
China
Prior art keywords
crucible
carbon
tray
single crystal
carbon crucible
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201922060590.8U
Other languages
Chinese (zh)
Inventor
杨昊
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hongyuan New Materials Baotou Co ltd
Original Assignee
Hongyuan New Materials Baotou Co ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hongyuan New Materials Baotou Co ltd filed Critical Hongyuan New Materials Baotou Co ltd
Priority to CN201922060590.8U priority Critical patent/CN211522373U/en
Application granted granted Critical
Publication of CN211522373U publication Critical patent/CN211522373U/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

The utility model discloses a quick melt device of single crystal growing furnace easy to assemble, including mount, carbon crucible and netted crucible, the inside welded connection of mount has the fixed sleeve, and the inboard of fixed sleeve is provided with the pillar to the connecting plate is installed at the top of pillar, the connecting plate is connected with the tray through the draw-in groove, and the draw-in groove sets up in the inside of tray, carbon crucible installs in the top of tray, and carbon crucible's the outside is provided with the limiting plate, netted crucible sets up in carbon crucible's top, and carbon crucible's inside is provided with quartz crucible. This quick melt device of single crystal growing furnace easy to assemble is provided with the heater between quartz crucible and the carbon crucible, and quartz crucible's outward surface is netted, and the heat of heater sees through netted direct radiation quartz crucible wall when melting silicon material like this, very effectively practices thrift power consumption and melt required time, has practiced thrift the consumption simultaneously at crystal pulling in-process.

Description

Quick melt device of single crystal growing furnace easy to assemble
Technical Field
The utility model relates to a single crystal growing furnace correlation technique field specifically is a quick melt device of single crystal growing furnace easy to assemble.
Background
With the continuous improvement of the production capacity of photovoltaic single crystals, RCZ repeated feeding is currently the mainstream of production in a photovoltaic single crystal workshop, in order to reduce the production cost of the single crystal silicon, increase the material feeding amount and reduce the energy consumption to become the effective path of an enterprise, at present, the photovoltaic industry generally uses a graphite crucible and a CC crucible as a container for bearing a quartz crucible to melt silicon materials, but the heat of a heater is directly radiated to the outer wall of the CC crucible firstly, the silicon materials in the quartz crucible are melted through heat conduction, because the heat conductivity of the CC material is very low, the silicon materials can be completely melted only by setting the heating power to be very high, so that a lot of invalid heating energy is wasted, the cost for processing the single crystal silicon rods is increased, and the production efficiency is reduced, so that a single crystal furnace rapid material melting device convenient to install is provided, and the problems provided in the foregoing.
SUMMERY OF THE UTILITY MODEL
An object of the utility model is to provide a quick melt device of single crystal growing furnace easy to assemble, heater heat all is earlier direct radiation to CC crucible outer wall when solving the monocrystalline silicon production on the present market that above-mentioned background art provided, silicon material melts in with quartz crucible through heat-conduction, because CC material thermal conductivity is very low, only set for very high could melt silicon material with heating power completely, just so wasted a lot of invalid heating energy, make the cost-push of monocrystalline silicon rod processing, thereby production efficiency's problem has been reduced.
In order to achieve the above object, the utility model provides a following technical scheme: the utility model provides a quick melt device of single crystal growing furnace easy to assemble, includes mount, carbon-carbon crucible and netted crucible, the inside welded connection of mount has fixed sleeve, and fixed sleeve's inboard is provided with the pillar to the connecting plate is installed at the top of pillar, the connecting plate is connected with the tray through the draw-in groove, and the draw-in groove is seted up in the inside of tray, carbon-carbon crucible installs in the top of tray, and carbon-carbon crucible's the outside is provided with the limiting plate, netted crucible sets up in carbon-carbon crucible's top, and carbon-carbon crucible's inside is provided with quartz crucible, be provided with the heater between quartz crucible and the carbon-carbon crucible, and the heater is connected through the inner wall of fixed block and carbon-carbon.
Preferably, the connection modes of the support column, the fixing frame and the connecting plate are all welded, and the support column and the connecting plate are perpendicular to each other.
Preferably, the slots in the tray are distributed at equal angles, the tray is connected with the connecting plate in a clamping mode through the slots, the depth of each slot is smaller than the thickness of the tray, and the tray is made of graphite materials.
Preferably, the connection mode of the limiting plate and the inner wall of the fixed sleeve is welding, the limiting plate is annular, and the inner diameter of the limiting plate is matched with the outer diameter of the carbon-carbon crucible.
Preferably, the outer surface of the quartz crucible is in a net shape, the quartz crucible and the carbon-carbon crucible are connected in a joint mode, the carbon-carbon crucible and the net-shaped crucible are connected in a joint mode, and meanwhile, the inner diameter of the carbon-carbon crucible is larger than the outer diameter of the quartz crucible.
Preferably, the heaters are distributed in a ring shape, and the heaters are connected with the fixed blocks in a bolt connection mode.
Compared with the prior art, the beneficial effects of the utility model are that: the quick melt device of the single crystal furnace which is convenient to install,
(1) the clamping groove is formed in the tray, and the tray is connected with the connecting plate in a clamping manner through the clamping groove, so that the tray is convenient to position when being installed, the tray can be installed more quickly, and the tray is effectively prevented from being inclined;
(2) the limiting plate is arranged on the outer side of the carbon-carbon crucible and is annular, and the inner diameter of the limiting plate is matched with the outer diameter of the carbon-carbon crucible, so that the carbon-carbon crucible is convenient to fix, and the stability of the carbon-carbon crucible in use is further ensured;
(3) the heater is arranged between the quartz crucible and the carbon-carbon crucible, and the outer surface of the quartz crucible is in a net shape, so that when the silicon material is melted, the heat of the heater penetrates through the wall of the quartz crucible which directly radiates the silicon material in the net shape, the power consumption and the time required by melting the silicon material are effectively saved, and meanwhile, the power consumption is saved in the crystal pulling process.
Drawings
FIG. 1 is a schematic view of the overall structure of the present invention;
FIG. 2 is a schematic view of the heater and carbon crucible of the present invention;
FIG. 3 is a schematic view of the connection of the tray and the slot of the present invention;
fig. 4 is the utility model discloses the structure schematic diagram is overlooked in fixed sleeve and limiting plate connection.
In the figure: 1. a fixed mount; 2. fixing the sleeve; 3. a pillar; 4. a connecting plate; 5. a card slot; 6. a tray; 7. a carbon-carbon crucible; 8. a limiting plate; 9. a mesh crucible; 10. a quartz crucible; 11. a heater; 12. and (5) fixing blocks.
Detailed Description
The technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative work belong to the protection scope of the present invention.
Referring to fig. 1-4, the present invention provides a technical solution: a quick melt device of a single crystal furnace convenient to install comprises a fixing frame 1, a fixing sleeve 2, a support 3, a connecting plate 4, a clamping groove 5, a tray 6, a carbon crucible 7, a limiting plate 8, a reticular crucible 9, a quartz crucible 10, a heater 11 and a fixing block 12, wherein the fixing frame 1 is internally welded and connected with the fixing sleeve 2, the support 3 is arranged on the inner side of the fixing sleeve 2, and the top of the pillar 3 is provided with a connecting plate 4, the connecting plate 4 is connected with a tray 6 through a clamping groove 5, the clamping groove 5 is arranged in the tray 6, the carbon crucible 7 is arranged above the tray 6, the limiting plate 8 is arranged outside the carbon crucible 7, the reticular crucible 9 is arranged above the carbon crucible 7, a quartz crucible 10 is arranged in the carbon-carbon crucible 7, a heater 11 is arranged between the quartz crucible 10 and the carbon-carbon crucible 7, and the heater 11 is connected with the inner wall of the carbon-carbon crucible 7 through a fixing block 12;
the connecting modes of the support 3, the fixing frame 1 and the connecting plate 4 are welding, and the support 3 and the connecting plate 4 are vertical to each other, so that the connection between the connecting plate 4 and the support 3 is firmer, and the phenomenon of falling off in the later use process is effectively prevented;
the clamping grooves 5 in the tray 6 are distributed at equal angles, the tray 6 is connected with the connecting plate 4 in a clamping mode through the clamping grooves 5, the depth of each clamping groove 5 is smaller than the thickness of the tray 6, and meanwhile, the tray 6 is made of graphite materials, so that the tray 6 is convenient to position in the installation process, convenience is brought to installation work of workers, and the structural strength of the tray 6 is improved due to the adoption of the graphite materials;
the connection mode of the limiting plate 8 and the inner wall of the fixed sleeve 2 is welding, the limiting plate 8 is annular, the inner diameter size of the limiting plate 8 is matched with the outer diameter size of the carbon-carbon crucible 7, the carbon-carbon crucible 7 is further limited and fixed, and the stability of the carbon-carbon crucible 7 in the using process is further ensured;
the outer surface of the quartz crucible 10 is in a net shape, the quartz crucible 10 and the carbon-carbon crucible 7 are connected in a joint mode, the carbon-carbon crucible 7 and the net-shaped crucible 9 are connected in a joint mode, and meanwhile, the inner diameter of the carbon-carbon crucible 7 is larger than the outer diameter of the quartz crucible 10, so that the quartz crucible 10 and the net-shaped crucible 9 are easy to install, and the installation time is saved;
the heater 11 is the annular and distributes, and the connected mode of heater 11 and fixed block 12 is bolted connection, can make the heater 11 more firm in the use like this, has guaranteed the stability of heater 11, can practice thrift power consumption and melt required time simultaneously through heater 11, has practiced thrift the consumption.
The working principle is as follows: when the quick material melting device of the single crystal furnace convenient to install is used, as shown in figures 1-2 and 4, firstly, a worker places the fixing frame 1 at a corresponding position, then aligns the clamping groove 5 at the bottom of the tray 6 with the connecting plate 4, then puts down the tray 6, and under the action of the clamping groove 5 and the connecting plate 4, the tray 6 is convenient to install and position, so that the tray 6 can be effectively prevented from being inclined in the installation process, convenience is brought to the worker for operation, then the worker places the carbon crucible 7 on the tray 6 through the annular limiting plate 8, and the carbon crucible 7 can be limited and protected due to the fact that the inner diameter size of the limiting plate 8 is matched with the outer diameter size of the carbon crucible 7, and the stability of the carbon crucible 7 in later use is further guaranteed;
then a worker puts a silicon raw material into the quartz crucible 10, lifts the quartz crucible 10 into the carbon-carbon crucible 7, then sleeves the reticular crucible 9 on the outer side of the quartz crucible 10, puts the reticular crucible 9 at the upper opening position of the carbon-carbon crucible 7, after the reticular crucible 9 and the carbon-carbon crucible 7 are installed, the worker lowers the quartz crucible 10 to the lower melting material crucible position of the carbon-carbon crucible 7, as shown in figure 3, then the worker opens the heater 11 to enable the heater 11 to start working, the heater 11 will gradually raise power to start melting silicon materials until the silicon materials are melted and enter other working procedures, thus the heat of the heater 11 directly radiates the wall of the quartz crucible 10 through the reticular device when melting silicon materials, the power consumption and the time required by melting materials are effectively saved, the power consumption is saved in the crystal pulling process, and the damage and the demoulding difficulty of the carbon-carbon crucible 7 caused by beating are solved in the crucible demoulding process, the above is the operation of the whole device, and the details not described in the present specification are the prior art known to those skilled in the art.
Although the present invention has been described in detail with reference to the foregoing embodiments, it will be apparent to those skilled in the art that modifications may be made to the embodiments or portions thereof without departing from the spirit and scope of the invention.

Claims (6)

1. The utility model provides a quick melt device of single crystal growing furnace easy to assemble, includes mount (1), carbon crucible (7) and netted crucible (9), its characterized in that: the inside welded connection of mount (1) has fixed sleeve (2), and the inboard of fixed sleeve (2) is provided with pillar (3) to connecting plate (4) are installed at the top of pillar (3), connecting plate (4) are connected with tray (6) through draw-in groove (5), and draw-in groove (5) are seted up in the inside of tray (6), install in the top of tray (6) carbon crucible (7), and the outside of carbon crucible (7) is provided with limiting plate (8), netted crucible (9) set up in the top of carbon crucible (7), and the inside of carbon crucible (7) is provided with quartz crucible (10), be provided with heater (11) between quartz crucible (10) and carbon crucible (7), and heater (11) are connected through the inner wall of fixed block (12) and carbon crucible (7).
2. The quick melting device of a single crystal furnace convenient to install of claim 1, wherein: the connecting modes of the support columns (3) and the fixing frames (1) and the connecting plates (4) are all welded, and the support columns (3) and the connecting plates (4) are perpendicular to each other.
3. The quick melting device of a single crystal furnace convenient to install of claim 1, wherein: the tray is characterized in that clamping grooves (5) in the tray (6) are distributed at equal angles, the tray (6) is connected with the connecting plate (4) in a clamping mode through the clamping grooves (5), the depth of each clamping groove (5) is smaller than the thickness of the tray (6), and the tray (6) is made of graphite.
4. The quick melting device of a single crystal furnace convenient to install of claim 1, wherein: the connection mode of the limiting plate (8) and the inner wall of the fixed sleeve (2) is welding, the limiting plate (8) is annular, and the inner diameter size of the limiting plate (8) is matched with the outer diameter size of the carbon-carbon crucible (7).
5. The quick melting device of a single crystal furnace convenient to install of claim 1, wherein: the outer surface of the quartz crucible (10) is in a net shape, the connection mode of the quartz crucible (10) and the carbon-carbon crucible (7) is in joint connection, the connection mode of the carbon-carbon crucible (7) and the net-shaped crucible (9) is in joint connection, and meanwhile the inner diameter of the carbon-carbon crucible (7) is larger than the outer diameter of the quartz crucible (10).
6. The quick melting device of a single crystal furnace convenient to install of claim 1, wherein: the heater (11) is distributed in a ring shape, and the heater (11) is connected with the fixing block (12) through bolts.
CN201922060590.8U 2019-11-26 2019-11-26 Quick melt device of single crystal growing furnace easy to assemble Active CN211522373U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201922060590.8U CN211522373U (en) 2019-11-26 2019-11-26 Quick melt device of single crystal growing furnace easy to assemble

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201922060590.8U CN211522373U (en) 2019-11-26 2019-11-26 Quick melt device of single crystal growing furnace easy to assemble

Publications (1)

Publication Number Publication Date
CN211522373U true CN211522373U (en) 2020-09-18

Family

ID=72463920

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201922060590.8U Active CN211522373U (en) 2019-11-26 2019-11-26 Quick melt device of single crystal growing furnace easy to assemble

Country Status (1)

Country Link
CN (1) CN211522373U (en)

Similar Documents

Publication Publication Date Title
CN101370970B (en) Methods and apparatuses for manufacturing monocrystalline cast silicon and monocrystalline cast silicon bodies for photovoltaics
CN104328492A (en) Device for moving small insulating plate at bottom of polycrystalline silicon ingot furnace and polycrystalline silicon ingot furnace
CN110184646A (en) The preparation facilities of major diameter high-efficiency N-type monocrystalline silicon
CN111910247A (en) Ingot furnace for directionally solidifying and growing crystalline silicon and application
CN104195634A (en) Novel thermal field structure of large-size silicon ingot polycrystal ingot furnace
CN211522373U (en) Quick melt device of single crystal growing furnace easy to assemble
CN103320849B (en) Secondary feeding device and secondary feeding method therefor
CN205474106U (en) Protection seed crystal type crucible
CN102433585B (en) Thermal field structure of quasi-monocrystal ingot furnace
CN202164380U (en) Thermal field structure of high-yield polycrystalline silicon ingot casting furnace
CN209836368U (en) Ingot furnace for directionally solidifying and growing crystalline silicon
CN204111927U (en) A kind of high-efficiency polycrystalline ingot furnace thermal field structure
CN205474097U (en) A heat exchange platform for growing accurate single crystal
CN217266134U (en) Furnace dismantling device for single crystal furnace graphite thermal field
CN201545934U (en) Clamp for lifting silica crucible
CN203174222U (en) Thermal field structure of polycrystalline silicon ingot casting furnace
CN201501941U (en) Temperature field stabilizing device of single crystal silicon furnace
CN202297870U (en) Ultrapure germanium single crystal furnace drawing device
CN214327966U (en) Sectional feeding device
CN203559153U (en) Suspension protection device of secondary charger of single crystal furnace
CN204111924U (en) A kind of large size silicon ingot polycrystalline ingot furnace Novel hot field structure
CN210367999U (en) Simple device for drawing tubular material
CN207811931U (en) A kind of crucible guard boards device of quasi- G7 ingot castings thermal field
CN217418857U (en) Disc-shaped graphite pot bottom and graphite crucible
CN201648562U (en) Czochralski silicon furnace device

Legal Events

Date Code Title Description
GR01 Patent grant
GR01 Patent grant