CN217418857U - Disc-shaped graphite pot bottom and graphite crucible - Google Patents
Disc-shaped graphite pot bottom and graphite crucible Download PDFInfo
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- CN217418857U CN217418857U CN202220873512.9U CN202220873512U CN217418857U CN 217418857 U CN217418857 U CN 217418857U CN 202220873512 U CN202220873512 U CN 202220873512U CN 217418857 U CN217418857 U CN 217418857U
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Abstract
The utility model relates to a pot bottom technical field specifically is disc graphite pot bottom, including the pot bottom, the standing groove has been seted up to one side of pot bottom, one side fixedly connected with contact pad of pot bottom. The utility model has the advantages that: when carrying out the melting operation of monocrystalline silicon, at first accomplish the construction of graphite thermal field, place graphite crucible on the pot bottom afterwards, and make placing above that inside the standing groove is advanced in the motion, place solid monocrystalline silicon in graphite crucible and open the heater and heat it, the pot bottom of using graphite to make can in time make its inside monocrystalline silicon melt on transferring the heat of heater to graphite crucible, because graphite mold possesses good heat conductivility, intensity rises advantages such as along with the temperature, not only reduce the heat loss of heater, and can be even with in heat transfer to graphite crucible, can not lead to its melting inequality because of being heated of monocrystalline silicon is uneven, the efficiency of melting of improvement monocrystalline silicon that can be very big.
Description
Technical Field
The utility model relates to a pot bottom technical field, especially disc graphite pot bottom and graphite crucible.
Background
Monocrystalline silicon generally refers to a substance formed by an arrangement of silicon atoms. Silicon is the most commonly used semiconductor material, and when molten elemental silicon solidifies, the silicon atoms are arranged in diamond lattices to form crystal nuclei, and the crystal nuclei grow into crystal grains with the same crystal plane orientation to form single crystal silicon. Monocrystalline silicon, as an active non-metallic element crystal, is an important component of a crystal material, is at the front of the development of new materials, and is mainly used as a semiconductor material and used for solar photovoltaic power generation, heat supply and the like. The graphite thermal field is simply the entire graphite heating system used to pull the single crystal silicon. The graphite thermal field is a whole system for melting silicon materials and keeping the single crystal growth at a certain temperature, and a graphite heating system is required when the silicon materials are melted and mainly comprises a pressure ring, a heat preservation cover, an upper heat preservation cover, a middle heat preservation cover, a lower heat preservation cover, a graphite crucible (a three-piece crucible), a crucible supporting rod, a crucible tray, an electrode, a heater, a guide cylinder, a graphite bolt and the like.
When the monocrystalline silicon is melted in the conventional graphite thermal field, the graphite crucible cannot be uniformly heated, so that the monocrystalline silicon is melted unevenly, the probability of crystal pulling failure is increased, the melting efficiency of the monocrystalline silicon is influenced, and the waste of graphite is caused because the conventional pot bottom is made of pure solid graphite, so that the problem is solved by the disc-shaped graphite pot bottom.
SUMMERY OF THE UTILITY MODEL
The utility model aims to overcome the defects of the prior art, provides a disc-shaped graphite pot bottom and effectively solves the defects of the prior art.
The purpose of the utility model is realized through the following technical scheme: disc graphite bottom of a boiler, including the bottom of a boiler, the standing groove has been seted up to one side of the bottom of a boiler, one side fixedly connected with contact pad of the bottom of a boiler, one side fixedly connected with antislip strip of the bottom of a boiler, heat conduction storehouse has been seted up to one side of the bottom of a boiler, one side of heat conduction storehouse is provided with the heat conduction post.
Optionally, the pot bottom is made of graphite, when the monocrystalline silicon is melted, firstly, the construction of a graphite thermal field needs to be completed, then, the graphite crucible is placed on the pot bottom, the silicon single crystal is placed in the placing groove, then the solid single crystal silicon is placed in the graphite crucible, the heater is started to heat the silicon single crystal, the pot bottom made of graphite can timely transfer the heat of the heater to the graphite crucible to melt the silicon single crystal in the graphite crucible, because the graphite mold has the advantages of excellent heat-conducting property, good thermal stability, strength rising along with temperature and the like, the heat loss of the heater can be reduced, and heat can be uniformly transferred into the graphite crucible, the monocrystalline silicon can not be melted unevenly due to uneven heating, the probability of successful crystal pulling can be greatly improved, and the melting efficiency of the monocrystalline silicon can be greatly improved.
Optionally, the diameter of the placing groove is equal to the diameter of the placing column above the pot bottom, after preparation before crystal pulling is completed, the graphite crucible is placed on the pot bottom, the placing pad is made to move into the placing groove in the pot bottom, the graphite crucible can be limited, and the graphite crucible can be prevented from shaking on the pot bottom.
Optionally, the diameter of the contact pad is smaller than that of the pot bottom, when the monocrystalline silicon is pulled, firstly, the graphite thermal field needs to be built, then, the pot bottom is placed on the heater, then, a proper amount of solid monocrystalline silicon is placed in the graphite crucible, the graphite crucible is placed on the pot bottom ground until the groove on the heater completely moves into the contact pad, the preparation work before heating can be completed, the pot bottom can be prevented from shaking on the heater, and the pulling work cannot be influenced.
Optionally, the number of the anti-slip strips is a plurality, the anti-slip strips are linearly arranged on one side of the pot bottom, the pot bottom can be prevented from shaking on the heater through the arrangement of the anti-slip strips, the pot bottom can be further limited on the basis of the contact pad through the anti-slip strips, and the anti-slip effect of the pot bottom can be further improved.
Optionally, the quantity of heat conduction post is a plurality of, a plurality of heat conduction post circumference array is in one side of the bottom of a boiler, when carrying out the heating operation of graphite crucible, the heat of heater will be inside heat conduction storehouse through the bottom of a boiler transmission to heat the heat conduction post, can heat its inside monocrystalline silicon in can reaching graphite crucible through the upside of bottom of a boiler at last, not only do not have thermal loss, saving graphite that moreover can be very big, avoided the waste of resource.
The application also provides a graphite crucible, which is provided with the disc-shaped graphite pot bottom.
The utility model has the advantages of it is following:
1. the disc-shaped graphite pot bottom is matched with the pot bottom, the placing groove, the contact pad and the anti-slip strip, when the melting operation of the monocrystalline silicon is carried out, firstly, a workshop needs to be cleaned, then, a graphite thermal field is built by workers, then, the graphite pot is placed on the pot bottom, the placing pad on the graphite pot bottom moves into the placing groove, then, the solid monocrystalline silicon is placed in the graphite pot, the heater is started to heat the solid monocrystalline silicon, the pot bottom made of graphite can transmit the heat of the heater to the graphite pot in time to melt the monocrystalline silicon in the graphite pot, and as the graphite mould has the advantages of excellent heat conduction performance, good heat stability, rising of strength along with temperature and the like, the heat loss of the heater can be reduced, the heat can be transmitted to the graphite pot uniformly, the phenomenon that the monocrystalline silicon is not melted unevenly due to uneven heating of the monocrystalline silicon can be avoided, not only can greatly improve the success rate of crystal pulling, but also can greatly improve the melting efficiency of the monocrystalline silicon.
2. This disc graphite bottom of a boiler, through the bottom of a boiler, cooperation setting between heat conduction storehouse and the heat conduction post, when carrying out graphite crucible's heating during operation, the heat of heater will transmit inside the heat conduction storehouse through the bottom of a boiler to heat the heat conduction post, the upside through the bottom of a boiler can be with heat transfer to graphite crucible in at last, can heat its inside monocrystalline silicon, not only do not have thermal loss, saving graphite that moreover can be very big, the waste of resource has been avoided.
Drawings
FIG. 1 is a first view structural diagram of the graphite pot bottom of the present invention;
FIG. 2 is a second view structural diagram of the graphite pot bottom of the present invention;
FIG. 3 is a third view angle structure diagram of the graphite pot bottom of the present invention
Fig. 4 is a schematic view of the cross-sectional structure of the graphite pot bottom of the present invention.
In the figure: 1-pot bottom, 2-placing groove, 3-contact pad, 4-antislip strip, 5-heat conducting bin and 6-heat conducting column.
Detailed Description
The invention will be further described with reference to the drawings, but the scope of the invention is not limited to the following.
The first embodiment is as follows:
as shown in fig. 1 to 4, a disc-shaped graphite pot bottom comprises a pot bottom 1, which can not only reduce the heat loss of a heater, but also uniformly transfer heat into a graphite crucible, so that the monocrystalline silicon is not melted unevenly due to uneven heating, the melting efficiency of the monocrystalline silicon can be greatly improved, a placing groove 2 is arranged on one side of the pot bottom 1, which can limit the graphite crucible, so as to prevent the graphite crucible from shaking on the pot bottom 1, a contact pad 3 is fixedly connected to one side of the pot bottom 1, which can prevent the pot bottom 1 from shaking on the heater, and can not influence the crystal pulling work, an anti-slip strip 4 is fixedly connected to one side of the pot bottom 1, which can prevent the pot bottom from shaking on the heater, the anti-slip strip 4 can further limit the pot bottom 1 on the basis of the contact pad 3, so as to further improve the anti-slip effect of the pot bottom 1, one side of the pan bottom 1 is provided with a heat conducting bin 5, and one side of the heat conducting bin 5 is provided with a heat conducting column 6.
As an optional technical solution of the utility model: the material of pot bottom 1 is graphite, when carrying out monocrystalline silicon's melting operation, at first need accomplish the building of graphite thermal field, places graphite crucible on pot bottom 1 afterwards to make placing above that move into inside standing groove 2, place solid monocrystalline silicon in graphite crucible and open the heater and heat it afterwards, the pot bottom 1 that uses graphite to make can in time make its inside monocrystalline silicon melt on can in time with the heat transfer of heater to graphite crucible.
As an optional technical solution of the utility model: the diameter size of standing groove 2 equals with the diameter size of the bottom of a boiler 1 top place post, after the preparation work before the crystal pulling is accomplished, places graphite crucible on bottom of a boiler 1 to make and place the pad motion and advance inside 2 standing grooves on the bottom of a boiler 1, and then can carry on spacingly to graphite crucible, can prevent that graphite crucible from taking place to rock on the bottom of a boiler 1.
As an optional technical solution of the utility model: the diameter of the contact pad 3 is smaller than that of the pot bottom 1, when the monocrystalline silicon is pulled, firstly, the construction of a graphite thermal field needs to be completed, then, the pot bottom 1 is placed on the heater, then, a proper amount of solid monocrystalline silicon is placed in the graphite crucible, the graphite crucible is placed on the pot bottom ground 1 until the groove on the heater completely moves into the contact pad 3, the preparation work before heating can be completed, and the pot bottom 1 can be prevented from shaking on the heater.
Example two:
as an optional technical solution of the utility model: the quantity of antislip strip 4 is a plurality of, and the setting through the antislip strip of 4 linear array of a plurality of antislip strip in one side of the bottom of a boiler 1 can prevent that the bottom of a boiler from taking place to rock on the heater, and antislip strip 4 can further carry on spacingly to the bottom of a boiler 1 on the basis of contact pad 3, can further improve the anti-skidding effect of the bottom of a boiler 1.
As an optional technical solution of the utility model: the quantity of heat conduction post 6 is a plurality of, 6 circumference arrays of a plurality of heat conduction post are in one side of bottom of a boiler 1, when carrying out graphite crucible's heating during operation, the heat of heater will be inside heat conduction storehouse 5 is transmitted through bottom of a boiler 1 to heat conduction post 6, can be with in heat transmission graphite crucible through the upside of bottom of a boiler 1 at last, can heat its inside monocrystalline silicon, not only do not have thermal loss, and saving graphite that can be very big, the waste of resource has been avoided.
The working process of the utility model is as follows: when the utility model is used by a user,
through the matching arrangement between the pot bottom 1, the placing groove 2, the contact pad 3 and the anti-slip strip 4, when the melting operation of the monocrystalline silicon is carried out, firstly, a workshop needs to be cleaned, then, the construction of a graphite thermal field is completed through workers, then, the graphite crucible is placed on the pot bottom 1, the placing pad on the graphite crucible is moved into the placing groove 2, then, the solid monocrystalline silicon is placed in the graphite crucible, the heater is started to heat the solid monocrystalline silicon, the pot bottom 1 made of graphite can timely transmit the heat of the heater to the graphite crucible to melt the monocrystalline silicon in the pot bottom, because the graphite mold has excellent heat-conducting property, the heat stability is good, the strength is increased along with the temperature, the heat loss of the heater can be reduced, the heat can be uniformly transmitted into the graphite crucible, the monocrystalline silicon cannot be melted unevenly due to uneven heating of the monocrystalline silicon, not only can greatly improve the success rate of crystal pulling, but also can greatly improve the melting efficiency of the monocrystalline silicon.
Example three: the disc-shaped graphite pot bottom comprises a pot bottom 1, a placing groove 2 is formed in one side of the pot bottom 1, a contact pad 3 is fixedly connected to one side of the pot bottom 1, and an anti-slip strip 4 is fixedly connected to one side of the pot bottom 1.
As an optional technical solution of the utility model: through the matching arrangement between the pot bottom 1, the placing groove 2, the contact pad 3 and the anti-slip strip 4, when the melting operation of the monocrystalline silicon is carried out, firstly, a workshop needs to be cleaned, then, a graphite thermal field is built through workers, then, the graphite crucible is placed on the pot bottom, the placing pad on the graphite crucible is moved into the placing groove 2, then, the solid monocrystalline silicon is placed in the graphite crucible, the heater is started to heat the solid monocrystalline silicon, the pot bottom 1 made of graphite can timely transmit the heat of the heater to the graphite crucible to melt the monocrystalline silicon in the graphite crucible, as the graphite mold has excellent heat-conducting property, the heat stability is good, the strength rises along with the temperature, and the like, the heat loss of the heater can be reduced, the heat can be uniformly transmitted into the graphite crucible, the monocrystalline silicon cannot be melted unevenly due to uneven heating of the monocrystalline silicon, compared with the first embodiment and the second embodiment, the anti-skid effect of the pot bottom 1 can be further improved by adding the anti-skid grains in the placing groove 2.
In summary, the following steps: through the matching arrangement between the pot bottom 1, the placing groove 2, the contact pad 3 and the anti-slip strip 4, when the melting operation of the monocrystalline silicon is carried out, firstly, a workshop needs to be cleaned, then, the construction of a graphite thermal field is completed through workers, then, the graphite crucible is placed on the pot bottom 1, the placing pad on the graphite crucible is moved into the placing groove 2, then, the solid monocrystalline silicon is placed in the graphite crucible, the heater is started to heat the solid monocrystalline silicon, the pot bottom 1 made of graphite can timely transmit the heat of the heater to the graphite crucible to melt the monocrystalline silicon in the pot bottom, because the graphite mold has excellent heat-conducting property, the heat stability is good, the strength is increased along with the temperature, the heat loss of the heater can be reduced, the heat can be uniformly transmitted into the graphite crucible, the monocrystalline silicon cannot be melted unevenly due to uneven heating of the monocrystalline silicon, not only can greatly improve the success rate of crystal pulling, but also can greatly improve the melting efficiency of the monocrystalline silicon.
Example four
A graphite crucible having a disc-shaped graphite pot bottom of embodiment one or embodiment two or embodiment three.
Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that changes, modifications, substitutions and alterations can be made in these embodiments without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents.
Claims (7)
1. Disc graphite pot bottom, its characterized in that: the pot comprises a pot bottom (1), wherein a placing groove (2) is formed in one side of the pot bottom (1), a contact pad (3) is fixedly connected to one side of the pot bottom (1), an anti-slip strip (4) is fixedly connected to one side of the pot bottom (1), a heat conduction bin (5) is formed in one side of the pot bottom (1), and a heat conduction column (6) is arranged on one side of the heat conduction bin (5).
2. The disc-shaped graphite pot bottom according to claim 1, wherein: the pot bottom (1) is made of graphite.
3. A disc-shaped graphite pot bottom according to claim 1, characterized in that: the diameter of the placing groove (2) is equal to that of the placing column above the pot bottom (1).
4. A disc-shaped graphite pot bottom according to claim 1, characterized in that: the diameter of the contact pad (3) is smaller than that of the pan bottom (1).
5. A disc-shaped graphite pot bottom according to claim 1, characterized in that: the number of the anti-slip strips (4) is a plurality, and the anti-slip strips (4) are linearly arrayed on one side of the pot bottom (1).
6. A disc-shaped graphite pot bottom according to claim 1, characterized in that: the number of the heat conduction columns (6) is a plurality, and the heat conduction columns (6) are circumferentially arrayed on one side of the pot bottom (1).
7. Graphite crucible, its characterized in that: the graphite crucible has a disk-shaped graphite pot bottom according to any one of claims 1 to 6.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202220873512.9U CN217418857U (en) | 2022-04-15 | 2022-04-15 | Disc-shaped graphite pot bottom and graphite crucible |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202220873512.9U CN217418857U (en) | 2022-04-15 | 2022-04-15 | Disc-shaped graphite pot bottom and graphite crucible |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN217418857U true CN217418857U (en) | 2022-09-13 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202220873512.9U Active CN217418857U (en) | 2022-04-15 | 2022-04-15 | Disc-shaped graphite pot bottom and graphite crucible |
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| CN (1) | CN217418857U (en) |
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- 2022-04-15 CN CN202220873512.9U patent/CN217418857U/en active Active
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