CN214193528U - Crucible support for crystal growth - Google Patents
Crucible support for crystal growth Download PDFInfo
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- CN214193528U CN214193528U CN202022597711.5U CN202022597711U CN214193528U CN 214193528 U CN214193528 U CN 214193528U CN 202022597711 U CN202022597711 U CN 202022597711U CN 214193528 U CN214193528 U CN 214193528U
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Abstract
The utility model relates to a technical field is equipped in the crystal growth, discloses a crystal growth crucible holds in palm, including the quartz capsule, the inside of quartz capsule one side is provided with quartz capsule, the inside of quartz capsule opposite side is provided with the heat preservation cotton, be provided with open back taper groove in the quartz capsule, be provided with logical groove in the heat preservation cotton, lead to groove and back taper groove intercommunication, it is provided with the quartz rod to lead to the inslot, the heat preservation cotton is stretched out to the one end of quartz rod, the logical groove formation seed crystal chamber between the tip to the bell jar of the quartz rod other end. The utility model discloses can improve the heat conduction efficiency of crystal axle center position, improve the growth interface concave degree to the fuse-element or become little protruding growth interface to the fuse-element.
Description
Technical Field
The utility model relates to a technical field is equipped in the crystal growth, especially relates to a crystal growth crucible holds in palm.
Background
The process of crystal growth is a physical process for transforming a substance from a molten state to a crystalline state, and a positive temperature gradient needs to be maintained at a growth interface, and latent heat of crystallization is released in the process. If the latent heat of the partial crystallization cannot be discharged in time, a negative temperature gradient appears near a crystal growth interface, crystal growth pause appears slightly, the yield and the production efficiency are reduced, the single crystal which is crystallized is remelted seriously, and crystal growth completely fails. The existing crystal growth mainly comprises a vertical Bridgman method (VB), a vertical gradient freezing method (VGF) and a high-pressure liquid seal Czochralski method (LEC), wherein the VB and VGF processes are used for gallium arsenide (GaAs) and indium phosphide (InP) crystal growth and are different from the LEC process, the geometrical shape of a crystal bar of the LEC process completely depends on the shape of a PBN crucible, and the PBN crucibles of the VB and VGF processes are divided into a seed crystal cavity, a conical part and an approximately equal-diameter part.
The existing crucible support is generally made of materials such as aluminum silicate and graphite due to the requirement of a temperature field structure, but the heat preservation effect is good, the latent heat of crystallization released in the crystallization process cannot be effectively conducted away, and in addition, the heat conductivity coefficient of the materials of the PBN crucible and the quartz tube is far higher than that of GaAs and InP materials, so that the crystal growth speed at the position along the inner wall of the PBN crucible is higher than that at the central position of the crystal, the crystal growth interface is concave to the shape of a melt, and the probability of twin crystal is greatly improved.
Meanwhile, in the crystal growth process of compound semiconductors GaAs, InP and the like, elements such as Si, S, Fe, Zn, Sn and the like are often required to be doped in order to obtain required electrical properties, the segregation coefficients of the elements in GaAs and InP are smaller than 1, and some elements are far smaller than 1, a concave growth interface causes that the outer side of the crystal at the same horizontal position is crystallized earlier than the center, the concentration of doping elements of a substrate processed at the later stage is distributed in concentric circles, and the higher the doping concentration towards the center of the substrate, the lower the uniformity of the substrate is.
SUMMERY OF THE UTILITY MODEL
In view of this, the present invention provides a crucible holder for crystal growth, which can improve the heat conduction efficiency at the axis position of the crystal, and improve the degree of the concave growth interface toward the melt or the growth interface becoming slightly convex toward the melt.
The utility model discloses an above-mentioned technical problem is solved to following technical means:
the utility model provides a crystal growth crucible holds in palm for the crystal growth crucible, the crystal growth crucible includes quartz crucible, PBN crucible and quartz cap, quartz crucible includes the quartz crucible microcup, PBN crucible and quartz cap are located quartz crucible, the crucible holds in the palm including the quartz capsule, the inside of quartz capsule one side is provided with quartz cotton, the inside of quartz capsule opposite side is provided with the cotton that keeps warm, be provided with open back taper groove in the quartz cotton, be provided with logical groove in the cotton that keeps warm, lead to groove and back taper groove intercommunication, it is provided with the quartz rod to lead to the inslot, the cotton that keeps warm is stretched out to the one end of quartz rod, the logical groove formation seed crystal chamber between the tip to the back taper groove of the quartz rod other end.
Further, the through groove is a circular through groove, and the inner diameter of the circular through groove is 1.1-1.3 times of the outer diameter of the small mouth of the quartz crucible. The small mouth of the quartz crucible is generally cylindrical, and the circular through groove can ensure that the distance from the edge of the small mouth of the quartz crucible to the inner wall of the circular through groove is equal, so that the heat preservation is uniform; if the inner diameter of the circular through groove is smaller than the outer diameter of the small mouth of the quartz crucible, the small mouth of the quartz crucible cannot be placed into the seed crystal cavity, and if the inner diameter of the circular through groove is equal to the outer diameter of the small mouth of the quartz crucible, the small mouth of the quartz crucible is contacted with the inner wall of the seed crystal cavity, so that the uneven heat dissipation of the seed crystal in all directions is caused to generate twin crystals; if the inner diameter of the circular through groove is too large, the side surface of the seed crystal cannot be effectively insulated.
Furthermore, the height of the seed crystal cavity is 2-5mm greater than that of the small mouth of the quartz crucible. The small mouth of the quartz crucible is easy to be jacked by the too short height of the seed crystal cavity, so that the small mouth of the quartz crucible is broken, and the latent heat of crystallization cannot be conducted away timely by the too long height of the seed crystal cavity.
Further, the quartz rod is a high-purity quartz rod, and the quartz tube is a high-purity quartz tube.
Further, the outer diameter of the quartz tube is larger than or equal to that of the quartz crucible. The quartz tube plays a role in supporting the quartz crucible, the PBN crucible in the quartz crucible and raw and auxiliary materials contained in the PBN crucible, and the quartz tube has the outer diameter larger than or equal to that of the quartz crucible and can play a role in supporting and stabilizing.
Further, the heat preservation cotton is porous aluminum silicate heat preservation cotton.
Further, the quartz wool is high-purity quartz fiber.
The porous aluminum silicate heat-insulating cotton and the high-purity quartz fiber have good heat-insulating effect, play a role in heat insulation in the crucible support, and jointly form a heat-insulating and radiating system of the crucible support together with the quartz rod, so that the latent heat of crystallization released in the crystal growth process is only conducted from a small amount of conical parts of the PBN crucible, but is conducted to the bottom by the quartz rod, the heat conduction efficiency of the axis position of the crystal is improved, and the degree of the growth interface concave to the melt or the growth interface slightly convex to the melt is improved.
It should be noted that the high purity quartz of the middle finger in the present invention refers to SiO2More than or equal to 99.9-99.99 percent of quartz, and has better heat-conducting property.
The utility model has the advantages that:
the utility model discloses set up the quartz rod in the inside heat preservation of quartz tube is cotton, quartz rod and heat preservation are cotton, quartz tube constitutes the seed crystal chamber jointly, the internal diameter and the high equal slightly of seed crystal chamber are greater than quartz crucible little mouth, heat preservation cotton and the cotton coefficient of heat conductivity of quartz are far less than the quartz rod, the three constitutes heat preservation heat radiation structure jointly, guarantee that the heat conduction rate that crystal growth process central point put obtains improving, can improve the concave degree to the fuse-element of growth interface or become little protruding growth interface to the fuse-element, improve crystallization rate and substrate piece homogeneity.
Drawings
FIG. 1 is a schematic structural view of a crystal growth crucible support of the present invention in use in combination with a crystal growth crucible;
wherein, quartz stick 1, quartz tube 2, heat preservation cotton 3, quartz cotton 4, seed crystal chamber 5, quartz crucible tip 6, PBN crucible 7, quartz cap 8, quartz crucible 9.
Detailed Description
The present invention will be described in detail below with reference to the accompanying drawings:
as shown in fig. 1:
a crystal growth crucible support is used for a crystal growth crucible, the crystal growth crucible comprises a quartz crucible 9, a PBN crucible 7 and a quartz cap 8, the quartz crucible 9 comprises a quartz crucible small nozzle 6, and the PBN crucible 7 and the quartz cap 8 are positioned in the quartz crucible 9.
The PBN crucible 7 holds in the palm including quartz capsule 2, and the external diameter of quartz capsule 2 equals quartz crucible 9's external diameter, and the inside of 2 upsides of quartz capsule has quartz cotton 4 through high temperature resistant adhesive, and the inside of 2 downsides of quartz capsule has heat preservation cotton 3 through high temperature resistant adhesive, is provided with open back taper groove in the quartz cotton 4, and the shape in back taper groove just matches with quartz crucible 9 for quartz crucible 9 inserts back in the back of the back taper groove, and quartz crucible 9 closely laminates with quartz cotton 4.
The round through groove is formed in the axis position in the heat preservation cotton 3, the inner diameter of the round through groove is 1.1-1.3 times of the outer diameter of the small mouth 6 of the quartz crucible, the round through groove is preferably 1.1 times in the embodiment, the round through groove is communicated with the inverted conical groove, the quartz rod 1 is adhered to the through groove through high-temperature-resistant glue, the lower end of the quartz rod 1 extends out of the heat preservation cotton 3, the through groove between the end part of the upper end of the quartz rod 1 and the conical groove forms a seed crystal cavity 5, the height of the crystal cavity is 2-5mm greater than the height of the small mouth 6 of the quartz crucible, and the embodiment is preferably 3 mm.
Wherein, the quartz rod 1 of this embodiment is a high-purity quartz rod, the quartz tube 2 is a high-purity quartz tube, the heat-insulating cotton 3 is porous alumina silicate heat-insulating cotton, the quartz cotton 4 is high-purity quartz fiber, and the high-purity quartz refers to SiO2Not less than 99.9-99.99% of quartz.
The utility model discloses a use method as follows:
when the quartz crucible is used, the quartz crucible 9 is inserted into the inverted cone-shaped groove, so that the inverted cone-shaped groove is arranged on the quartz crucible 9 and the quartz cotton 4 and is tightly attached to each other, the small mouth 6 of the quartz crucible is inserted into the seed crystal cavity 5, and the distance between the lower end part of the small mouth 6 of the quartz crucible and the upper end part of the quartz rod 1 is about 3 mm.
When the crystal grows, the temperature of the center of the small mouth 6 of the quartz crucible can be conducted away through the quartz rod 1, and because the heat conductivity coefficients of the heat preservation cotton 3 and the quartz cotton 4 are far lower than that of the quartz rod 1, the heat conduction rate of the center position in the crystal growth process is ensured to be improved, the degree of the growth interface concave to the melt or the growth interface slightly convex to the melt can be improved, and the crystal forming rate and the uniformity of the substrate slice are improved.
Although the present invention has been described in detail with reference to the preferred embodiments, those skilled in the art will understand that the present invention can be modified or replaced with other embodiments without departing from the spirit and scope of the present invention, which should be construed as limited only by the appended claims. The technology, shape and construction parts which are not described in detail in the present invention are all known technology.
Claims (7)
1. The utility model provides a crystal growth crucible holds in palm for crystal growth crucible, crystal growth crucible includes quartz crucible, PBN crucible and quartz cap, quartz crucible includes the quartz crucible bib, PBN crucible and quartz cap are located quartz crucible, its characterized in that: the crucible holds in the palm including the quartz capsule, the inside of quartz capsule one side is provided with quartz capsule, the inside of quartz capsule opposite side is provided with the heat preservation cotton, be provided with open back taper groove in the quartz capsule, be provided with logical groove in the heat preservation cotton, lead to groove and back taper groove intercommunication, it is provided with the quartz rod to lead to the inslot, the heat preservation cotton is stretched out to the one end of quartz rod, the logical groove formation seed crystal chamber between the tip to the bell jar of the quartz rod other end.
2. A crystal growth crucible susceptor as set forth in claim 1, wherein: the through groove is a circular through groove, and the inner diameter of the circular through groove is 1.1-1.3 times of the outer diameter of the small mouth of the quartz crucible.
3. A crystal growth crucible susceptor as set forth in claim 2, wherein: the height of the seed crystal cavity is 2-5mm greater than that of the small mouth of the quartz crucible.
4. A crystal growth crucible susceptor as set forth in claim 3 wherein: the quartz rod is a high-purity quartz rod, and the quartz tube is a high-purity quartz tube.
5. The crystal growth crucible susceptor of claim 4, wherein: the outer diameter of the quartz tube is larger than or equal to that of the quartz crucible.
6. The crystal growth crucible susceptor of claim 5, wherein: the heat insulation cotton is porous aluminum silicate heat insulation cotton.
7. The crystal growth crucible susceptor of claim 6, wherein said quartz wool is high purity quartz fiber.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202022597711.5U CN214193528U (en) | 2020-11-11 | 2020-11-11 | Crucible support for crystal growth |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202022597711.5U CN214193528U (en) | 2020-11-11 | 2020-11-11 | Crucible support for crystal growth |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN214193528U true CN214193528U (en) | 2021-09-14 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202022597711.5U Active CN214193528U (en) | 2020-11-11 | 2020-11-11 | Crucible support for crystal growth |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN214193528U (en) |
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2020
- 2020-11-11 CN CN202022597711.5U patent/CN214193528U/en active Active
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