CN102002753B - Processing method of phi 8-inch <110> czochralski silicon and thermal system thereof - Google Patents
Processing method of phi 8-inch <110> czochralski silicon and thermal system thereof Download PDFInfo
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- CN102002753B CN102002753B CN 201010585215 CN201010585215A CN102002753B CN 102002753 B CN102002753 B CN 102002753B CN 201010585215 CN201010585215 CN 201010585215 CN 201010585215 A CN201010585215 A CN 201010585215A CN 102002753 B CN102002753 B CN 102002753B
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- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 26
- 239000010703 silicon Substances 0.000 title claims abstract description 26
- 238000003672 processing method Methods 0.000 title abstract description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 25
- 238000000034 method Methods 0.000 claims abstract description 20
- 238000004321 preservation Methods 0.000 claims abstract description 19
- 238000004519 manufacturing process Methods 0.000 claims abstract description 9
- 239000007788 liquid Substances 0.000 claims abstract description 6
- 238000009413 insulation Methods 0.000 claims description 9
- 238000002360 preparation method Methods 0.000 abstract description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 abstract 2
- 229910052786 argon Inorganic materials 0.000 abstract 1
- 239000013078 crystal Substances 0.000 description 25
- 239000010453 quartz Substances 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 238000012423 maintenance Methods 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- 239000010439 graphite Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 238000010899 nucleation Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 240000003936 Plumbago auriculata Species 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 238000012797 qualification Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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Abstract
The invention relates to a processing method of a phi 8'' <110> czochralski silicon and a thermal system thereof. A longitudinal temperature gradient is improved by increasing the thickness of a lower heat preservation barrel and the thickness of a domain heat preservation layer of the thermal system, simultaneously reducing the thickness of an upper heat preservation barrel, and controlling the temperatures above and below the liquid surface of silicon melt. The method comprises the following steps of: controlling an Argon (Ar) flow, expanding a speed and keeping the speed, and is suitable for the preparation of monocrystals which have the diameter of 8 inches and above; and the prepared phi 8'' <110> monocrystal has a good structure, the dislocation density of below 100 /cm<2>, and the broken bract rate of less than or equal to 5 percent. The method is simple, convenient and reliable, improves production efficiency and product quality, and has popularization value.
Description
Technical field
The present invention relates to technical field of semiconductors, the manufacture method of particularly a kind of Ф 8 inches＜110〉czochralski silicon monocrystal and hot system thereof.
Background technology
In the silicon crystalline structure＜110〉crystal face and＜111〉crystal face angle is respectively 90 ° and 35 ° of 16', wherein angle is the dislocation and＜110 on 90 °＜111〉crystal face〉crystal orientation is consistent, this makes the difficulty that contracts Dash thin neck method prepares dislocation-free crystal increase greatly, often make crystal in preparation process, produce a large amount of dislocations, do not reach service requirements.
The patent No. is ZL's 200610129891.6 "＜110〉dislocation-free monocrystalline silicon manufacture method " patent, by adjusting hot system, set rational preparation technology parameter, successfully prepared＜110〉dislocation-free monocrystalline silicon, but this kind method is not suitable for the preparation of 8 inches of diameters and above monocrystalline, when adopting this kind method to prepare the large size silicon single-crystal, disconnected luxuriant phenomenon often appears, cause the crystal product qualified rate extremely low, cost consumption sharply increases, and can not satisfy existing production requirement.
Summary of the invention
Purpose of the present invention the object of the present invention is to provide a kind of processing method of the Ф of being suitable for 8 inches＜110〉silicon single-crystal productions exactly for overcoming the deficiencies in the prior art.
For reaching above purpose, find through test of many times: (1) is producing Ф 8 " during silicon single-crystal, owing to crucible size, charge amount increase, so the SiO that quartz crucible and molten silicon generate increases (in single crystal growth process; molten silicon Si reacts with quartz crucible high temperature and generates SiO, i.e. Si+SiO
2=2SiO).Thereby so need extra SiO band that bigger Ar airshed will generate from furnace chamber, too much dropping with the small-particle of avoiding SiO to condense on the colder furnace wall of temperature enters melt, and takes place disconnected luxuriant; (2) when expanding shoulder, do not lower the temperature and only reduce pulling rate and slowly expand shoulder, can avoid the cold possibility that causes disconnected bud to take place to a certain extent, improve the qualification rate of silicon single-crystal; (3), therefore need to determine comparatively suitable maintenance speed through testing because the pulling rate in the maintenance process can increase and reduce along with the silicon single-crystal diameter; (4) simultaneously because silicon single-crystal increases in size, and the latent heat of phase change of emitting at growth interface becomes big, so need bigger longitudinal temperature gradient to guarantee heat radiation.Therefore the present invention has increased the thickness of time heat-preservation cylinder and domain thermal insulation layer, has reduced the thickness of last heat-preservation cylinder simultaneously, and subsurface temperature is improved, and the temperature on the liquid level reduces simultaneously, thereby improves longitudinal temperature gradient.
The present invention realizes by such technical scheme: the manufacture method of a kind of Ф of being used for 8 inches＜110〉czochralski silicon monocrystal, the following heat-preservation cylinder by increasing hot system and the thickness of domain thermal insulation layer, reduced the thickness of last heat-preservation cylinder simultaneously, control under the silicon melt level and the temperature on the liquid level, thereby the raising longitudinal temperature gradient is characterized in that: described method also comprises following order step:
(1) the Ar airshed of silicon monocrystal growth process: 100-150slpm;
(2) expand shoulder: constant temperature slowly expands shoulder when expanding shoulder, expands shoulder speed: 0.1-0.2mm/min;
(3) keep: keep speed 0.7-0.8mm/min;
(4) making heat-preservation cylinder 2 thickness is 17 ± 3mm; Following heat-preservation cylinder thickness is 74 ± 3mm; The chassis insulation layer thickness is 85 ± 3mm.
Adopt the inventive method to carry out pulling monocrystal, by Ar control airshed, expand shoulder speed, maintenance speed and improve the thickness of following heat-preservation cylinder, domain thermal insulation layer and the last heat-preservation cylinder of hot system, control under the silicon melt level and the temperature on the liquid level, thereby raising longitudinal temperature gradient, "＜110〉single crystal structure good, dislocation desity is lower than 100/cm to make it to be fit to the preparation of 8 inches of diameters and above monocrystalline, the Ф 8 that the inventive method obtains
2, disconnected luxuriant rate≤5%; Present method is easy, and is reliable, improved production efficiency and quality product, has promotional value.
Description of drawings
Fig. 1 is the hot system of a straight pulling silicon single crystal furnace sectional view;
Fig. 2 is a silicon single-crystal each several part dimensioned drawing.
Embodiment
For a more clear understanding of the present invention, describe the present invention in conjunction with the accompanying drawings and embodiments in detail:
The hot system of straight pulling silicon single crystal furnace shown in Figure 1 comprises: insulation cover 1, go up heat-preservation cylinder 2, guide shell 3, cover 4 greatly, heat-preservation cylinder 5, chassis thermal insulation layer 6, gas exhaust duct 7, well heater 8, silicon melt 9, quartz crucible 10, monocrystalline 11 down.Wherein going up heat-preservation cylinder thickness is: 17 ± 3mm, following heat-preservation cylinder thickness: 74 ± 3mm, chassis insulation layer thickness: 85 ± 3mm.
The single crystal growing furnace model of embodiment is, the JRDL-800 type, and hot system is 18 " the hot system of graphite, furnace pressure 100torr, Ar airshed 150slpm.
Quartz crucible is put into plumbago crucible, and polysilicon material and borosilicate alloy are packed in the quartz crucible, finish changing the seed crystal of requirement, close body of heater, vacuumize post-heating and heat up polysilicon is all melted.The crucible of adjusting quartz crucible transfers 2r/min to, crystalline substance transfers 8r/min to.Decline seed crystal to melt liquid level place fully contacts and slowly reduces temperature, and the explanation temperature is suitable when indistinctly seeing bud.At this moment adjust the chuck pulling rate at 6mm/min to carrying out seeding between the 7.6mm/min, diameter remains on 6 ± 0.3m0m, simultaneously seeding be " cucurbit shape " dislocation with the discharge edge.Reduce the chuck pulling rate afterwards and slowly expand shoulder to 0.1-0.2mm/min, when shoulder diameter increases to the 190mm left and right sides, the shoulder height is approximately 350-450mm, raising this moment is pulled to 2mm/min is changeed shoulder, after finishing the commentaries on classics shoulder, pulling rate with 2mm/min makes isodiametric growth of crystal, sets crucible simultaneously and follows than for 1:0.2, transfers automatic control to after stablizing 20mm.Not heating up for a long time 3 ℃ at the excess silicon melt at last keeps simultaneously that pulling rate is constant to finish up, and afterbody is received point and length 〉=180mm, and the afterbody that forms inverted cone-shaped at last is to reserve the wrong surplus of enough antipositions.Deng crystal can being taken out after the crystal cooling.
Through measuring diameter 205-215mm, crystal orientation＜110 〉, dislocation desity＜100/cm
2, no swirl defect, oxygen level＜1 * 10
18Atom/cm
3, carbon content＜1 * 10
16Atom/cm
3
Adopt present method to carry out pulling monocrystal, test 20 stoves altogether, disconnected luxuriant rate≤5%.
According to the above description, can realize the solution of the present invention in conjunction with art technology.
Claims (1)
1. one kind is used for Ф 8 "＜110〉czochralski silicon monocrystal manufacture method; the following heat-preservation cylinder by increasing hot system and the thickness of chassis thermal insulation layer; reduced the thickness of last heat-preservation cylinder simultaneously; under the control silicon melt level and the temperature on the liquid level; thus improve longitudinal temperature gradient, it is characterized in that: described method also comprises following order step:
(1) the Ar airshed of silicon monocrystal growth process: 100-150slpm;
(2) expand shoulder: constant temperature slowly expands shoulder when expanding shoulder, expands shoulder speed: 0.1-0.2mm/min;
(3) keep: keep speed 0.7-0.8mm/min;
(4) making heat-preservation cylinder 2 thickness is 17 ± 3mm; Following heat-preservation cylinder thickness is 74 ± 3mm; The chassis insulation layer thickness is 85 ± 3mm.
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| CN 201010585215 CN102002753B (en) | 2010-12-13 | 2010-12-13 | Processing method of phi 8-inch <110> czochralski silicon and thermal system thereof |
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| CN 201010585215 CN102002753B (en) | 2010-12-13 | 2010-12-13 | Processing method of phi 8-inch <110> czochralski silicon and thermal system thereof |
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| CN102002753A CN102002753A (en) | 2011-04-06 |
| CN102002753B true CN102002753B (en) | 2011-11-16 |
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| CN105154966A (en) * | 2015-10-19 | 2015-12-16 | 天津市环欧半导体材料技术有限公司 | Novel heat-insulating cylinder for improving crystallization of zone-melting silicon single crystals |
| CN106498494A (en) * | 2016-11-02 | 2017-03-15 | 中国电子科技集团公司第四十六研究所 | A kind of thermal field of MEMS making silicon single crystal material and preparation method |
| CN116479525B (en) * | 2023-06-25 | 2023-09-15 | 苏州晨晖智能设备有限公司 | Method for producing low-oxygen crystal bar |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1412353A (en) * | 2001-10-18 | 2003-04-23 | 北京有色金属研究总院 | Gas flow control method of thermal field of vertical pulling silicon monocrystal furnace and its device |
| CN1556256A (en) * | 2003-12-30 | 2004-12-22 | 宁波立立电子股份有限公司 | Upper thermal field used for eight inch adulterated arsenic vertical gulling monocrystal manufacture |
| EP1650330A1 (en) * | 2003-07-23 | 2006-04-26 | Shin-Etsu Handotai Co., Ltd | Method of producing silicon wafer and silicon wafer |
| CN1995485A (en) * | 2006-12-06 | 2007-07-11 | 天津市环欧半导体材料技术有限公司 | Dislocation-free silicon monocrystal production method |
-
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- 2010-12-13 CN CN 201010585215 patent/CN102002753B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1412353A (en) * | 2001-10-18 | 2003-04-23 | 北京有色金属研究总院 | Gas flow control method of thermal field of vertical pulling silicon monocrystal furnace and its device |
| EP1650330A1 (en) * | 2003-07-23 | 2006-04-26 | Shin-Etsu Handotai Co., Ltd | Method of producing silicon wafer and silicon wafer |
| CN1556256A (en) * | 2003-12-30 | 2004-12-22 | 宁波立立电子股份有限公司 | Upper thermal field used for eight inch adulterated arsenic vertical gulling monocrystal manufacture |
| CN1995485A (en) * | 2006-12-06 | 2007-07-11 | 天津市环欧半导体材料技术有限公司 | Dislocation-free silicon monocrystal production method |
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Effective date of registration: 20181213 Address after: 300384 Tianjin Binhai New Area high tech Zone Huayuan Industrial Area (outside the ring) Hai Tai Road 12 Patentee after: TIANJIN ZHONGHUAN ADVANCED MATERIAL TECHNOLOGY Co.,Ltd. Address before: 300384 New Technology Industrial Park, Nankai District, Tianjin, No. 12, East Haitai Road, Huayuan Industrial Zone (Outside the Ring) Patentee before: TIANJIN HUANOU SEMICONDUCTOR MATERIAL TECHNOLOGY Co.,Ltd. |
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Effective date of registration: 20191223 Address after: 214200 Dongfen Avenue, Yixing Economic and Technological Development Zone, Wuxi City, Jiangsu Province Co-patentee after: TIANJIN ZHONGHUAN ADVANCED MATERIAL TECHNOLOGY Co.,Ltd. Patentee after: Zhonghuan leading semiconductor materials Co.,Ltd. Address before: 300384 in Tianjin Binhai high tech Zone Huayuan Industrial Zone (outer ring) Haitai Road No. 12 Patentee before: TIANJIN ZHONGHUAN ADVANCED MATERIAL TECHNOLOGY Co.,Ltd. |
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Address after: 214200 Dongjia Avenue, Yixing Economic and Technological Development Zone, Wuxi City, Jiangsu Province Patentee after: Zhonghuan Leading Semiconductor Technology Co.,Ltd. Country or region after: China Patentee after: TIANJIN ZHONGHUAN ADVANCED MATERIAL TECHNOLOGY Co.,Ltd. Address before: 214200 Dongjia Avenue, Yixing Economic and Technological Development Zone, Wuxi City, Jiangsu Province Patentee before: Zhonghuan leading semiconductor materials Co.,Ltd. Country or region before: China Patentee before: TIANJIN ZHONGHUAN ADVANCED MATERIAL TECHNOLOGY Co.,Ltd. |
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