CN1412353A - Gas flow control method of thermal field of vertical pulling silicon monocrystal furnace and its device - Google Patents
Gas flow control method of thermal field of vertical pulling silicon monocrystal furnace and its device Download PDFInfo
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- CN1412353A CN1412353A CN 01136561 CN01136561A CN1412353A CN 1412353 A CN1412353 A CN 1412353A CN 01136561 CN01136561 CN 01136561 CN 01136561 A CN01136561 A CN 01136561A CN 1412353 A CN1412353 A CN 1412353A
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims description 58
- 229910052710 silicon Inorganic materials 0.000 title claims description 58
- 239000010703 silicon Substances 0.000 title claims description 58
- 238000000034 method Methods 0.000 title claims description 35
- 239000013078 crystal Substances 0.000 claims abstract description 128
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims abstract description 45
- 239000007789 gas Substances 0.000 claims abstract description 45
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 38
- 229910002804 graphite Inorganic materials 0.000 claims abstract description 30
- 239000010439 graphite Substances 0.000 claims abstract description 30
- 229910052786 argon Inorganic materials 0.000 claims abstract description 23
- 238000007789 sealing Methods 0.000 claims abstract description 15
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 claims description 32
- 238000013022 venting Methods 0.000 claims description 17
- 238000004321 preservation Methods 0.000 claims description 8
- 230000000694 effects Effects 0.000 claims description 6
- 238000010438 heat treatment Methods 0.000 abstract description 16
- 229920001296 polysiloxane Polymers 0.000 abstract 1
- 239000010453 quartz Substances 0.000 description 38
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 38
- 230000003245 working effect Effects 0.000 description 17
- 229910052799 carbon Inorganic materials 0.000 description 8
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 6
- 238000009413 insulation Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- MKFJKMUVTVAAMW-UHFFFAOYSA-N [Ar].[Si]=O Chemical compound [Ar].[Si]=O MKFJKMUVTVAAMW-UHFFFAOYSA-N 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000005265 energy consumption Methods 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000002210 silicon-based material Substances 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 229920000049 Carbon (fiber) Polymers 0.000 description 1
- 150000001485 argon Chemical class 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000004917 carbon fiber Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000001595 flow curve Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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Abstract
In the crystal growing chamber of monocrystal furnace, between the graphite heating body and heat-insulating cylinder a sealed gas-guiding device is mounted to make the gas flow of argon gas containing silicone oxide pass through the gas-guide tube and exhaust outlet of the sealed gas-guiding device and discharge to exterior of furnace under the action of vacuum pump. Said sealed gas-guiding devic consists of gas-guide tube, base seat, sealing ring and exhaust outlet, and is mounted between graphite heating body and heat-insulating cylinder.
Description
One, technical field
The present invention relates to the control method and the equipment of air-flow in the monocrystalline silicon growing of fused solution crystal pulling method, air-flow control and equipment in the Czochralski method of more specifically saying so (Czochralski method) monocrystalline silicon growing.
Two, background technology
The major part of semiconductor silicon single crystal is all with cutting krousky (Czochralski) manufactured.In this method, polysilicon is put in the quartz crucible, heat fused then, will melt silicon and slightly do cooling, give certain condensate depression, the silicon single crystal of a particular crystal orientation (being called seed crystal) is contacted with melt silicon, and temperature by adjusting melt and the seed crystal pulling speed that makes progress is when making seed body grow up to the close-target diameter, improve pulling speed, make the nearly permanent growth in thickness of single crystal.In the last stage of process of growth, the interior silicon melt not completely dissolve as yet of crucible this moment, by the heat supplied that increases the crystalline pulling speed and adjust crystal diameter is reduced to form a tail cone body gradually to crucible, when sharp enough hour of cone, crystal will break away from melt, thereby finishes the crystalline process of growth.
Czochralski silicon monocrystal must be negative pressure state in the single crystal growing furnace in process of growth, therefore in stove, constantly charge into argon gas, the argon gas that charges into forms the argon gas that contains silicon monoxide with the silicon monoxide that generates and is full of in the stove when drawing silicon single-crystal, must constantly outside stove, discharge with the gas that vacuum pump will contain the argon gas of silicon monoxide, when discharging this argon gas that contains silicon monoxide, flow through heating element in the stove, quartz crucible supporting apparatus etc. located, discharge through the venting port of vacuum pipe at last, the approach of its discharge is referring to the flow curve among Fig. 2.Because heating element and quartz crucible supporting apparatus are made by graphite, this deflated route mode makes heating element and quartz crucible supporting apparatus reduce greatly work-ing life.In addition, because air-flow in the indoor flow direction disorder of crystal growth, makes crystalline melt back number of times increase.Said melt back is meant the silicon crystal growing period, when producing a large amount of dislocation defects in its structure, the crystal refuse is fallen, and carry out again seed crystal and contact with melt, so that the process of growth dislocation-free imperfect crystal like this, must increase energy consumption, strengthen production cost.
Three, summary of the invention
Purpose of the present invention just is to work out a kind of control method of straight pulling silicon single crystal furnace thermal field air-flow, and prolonged the work-ing life of heating element and quartz crucible supporting apparatus largely, reduces the melt back number of times of crystal growth.
Another object of the present invention is to develop the equipment of control straight pulling silicon single crystal furnace thermal field air-flow, and the flow controlling method of air in the thermal field of straight pulling silicon single crystal furnace is achieved.
With cutting krousky (Czochralski) farad system semiconductor silicon single crystal, be those skilled in the art heat know, it is that quartz crucible 16 is put into quartz crucible supporting apparatus 14, the polysilicon of making raw material is packed in the quartz crucible 16, load onto the seed crystal of particular crystal orientation, furnace chamber and be evacuated to 6.5Pa-11Pa closes, heating makes unmelted polycrystalline silicon, after melting fully Deng silicon, the temperature of progressively reducing to silicon is near the fusing point of silicon, make quartz crucible and seed crystal reverse rotation, the speed of rotation of quartz crucible is 4rpm-15rpm, and the speed of rotation of seed crystal is 8rpm-30rpm, and silicon seed is slowly descended, and contact with silicon melt, the back upwards promotes seed crystal with the speed of 0.8mm/min-5mm/min.The purpose of this process mainly is to remove the dislocation defects that forms because of thermal shocking in the seed crystal, (50mm-300mm) slows to 0.4mm/min-0.6mm/min with pulling speed when treating that seed crystal rises to certain-length, reduce the temperature to 1400 ℃ of melt simultaneously--1418 °, make the seed crystal enlarged diameter, when the seed crystal diameter increases to than the low approximately 10mm-20mm of aimed dia, increase pulling speed as for 1.27mm/min-2.50mm/min, make crystal be close to equal diameter growth, promptly so-called isodiametric growth stage.Be generally about 1.5mm/min at isodiametric growth stage pulling rate, be reduced to about 0.6-0.8mm/min gradually.The silicon material that stores in quartz crucible does not enter the ending stage for a long time, pulling rate is 0.6mm/min-1.2mm/min, suitably increase the power of heat simultaneously, make crystal diameter be changed to a back taper, when boring point enough hour, it can break away from silicon melt, and at this moment the crystalline process of growth finishes, be cooled to when being close to room temperature in crystal, crystal is taken off.So the silicon crystal rod that generates is a conical object, has a central shaft, a seed crystal end cone and a tail cone body, and be the right cylinder that is bordering on constant diameter between two cones.
In the silicon monocrystal growth process, be negative pressure state in the stove, must constantly charge into argon shield.The single crystal growing furnace of cutting krousky (vertical pulling method) manufacturing silicon single-crystal of prior art as shown in Figure 1.The argon gas that contains silicon monoxide in growth room's (being furnace chamber) is under the effect of vacuum pump, and its flow pattern is (shown in the argon gas flow direction 2 Fig. 2) from top two tunnel, flows.One the tunnel on the face of silicon melt 13, quartz crucible supporting apparatus 14 (high purity graphite system), and flow to venting port 9 ' between the graphite heater 7, another road is on the face of silicon melt 13, by flowing to venting port 9 ' between graphite heater 7 and the heat-preservation cylinder 17.Because graphite heater heating, make graphite heater 7 and quartz crucible supporting apparatus 14 be in (about about 1500 ℃) under the high temperature, chemical reaction can take place with them in the silicon monoxide in the argon gas, and the time of reaction is long, and the typical time is 24 hours, the longlyest reach 48 hours, its consequence is that the resistance of graphite heater has increased, and resistance is inhomogeneous, has influence on the defective growth of silicon crystal, have to stop using, its life-span is reduced.To the influence of quartz crucible supporting apparatus and above-mentioned similar, under the corrosion of the indoor gas of crystal growth, the heat conductivility of quartz crucible supporting apparatus (high purity graphite system) reduce greatly and also deformation serious, access times reduce greatly, also reduced application life, in addition, the particle that gas reaction produced easily comes off when crystal growth, cause that crystal melt back number of times increases, the researchist has carried out control method and the control device that number of research projects has worked out a kind of air-flow for this reason.
The flow controlling method of air of a kind of straight pulling silicon single crystal furnace thermal field of the present invention, between indoor graphite heater of single crystal growing furnace crystal growth and heat-preservation cylinder, the sealing gas operated device is housed, airway 20 upper port of sealing gas operated device are positioned at the position, upper end of graphite heater, the argon gas that contains silicon monoxide the flow through upper port of airway and the venting port 9 that links to each other with the airway lower port discharge out of the furnace under the effect of vacuum pump.
The argon stream that contains silicon monoxide is controlled, changed the argon gas glide path that contains silicon monoxide, the argon gas of having avoided containing silicon monoxide contacts with heating element and quartz crucible supporting apparatus are mobile, chemical negative side is not even taken place in minimizing should, reduce or do not corrode, the life-span of graphite heater and quartz crucible supporting apparatus is improved.The regular flow of gas prevented bad particle under growth room's parts formation and adhere to, crystalline melt back number of times is reduced.Make air-flow not disorderly again in the indoor flow direction of crystal growth.The flow direction that sealing gas operated device air-flow is installed as shown in Figure 3.
In order better to control the flow direction of the argon stream that contains silicon monoxide, the pressure that stove contains the argon gas of silicon monoxide remains on 1.3 * 10
3-1.3 * 10
4Pa is advisable.
The sealing gas operated device that is used to control the straight pulling silicon single crystal furnace thermal field air-flow of the present invention, comprise airway 20, base 18, wear ring 19, venting port 9, the outer wall of airway 20 links to each other with the step 21 of base 18, the inwall of airway 20 links to each other with the step 22 of wear ring 19, base 18 places on the wear ring 19, wear ring 19 places on the wall of venting port 9, and the upper port of venting port 9 is connected with the lower port of airway 20, sees Fig. 3, Fig. 4.
In order to control the flow direction of air-flow better, it is good that the outer wall of airway 20 upper end exceeds 10mm-300mm than the upper end of airway inwall.Distance between the inside and outside wall of airway 20 is 2-15mm.
Heat-preservation cylinder 17 and airway 20 are made by high purity graphite or carbon fiber (CFC), base 18, and wear ring 19, quartz crucible supporting apparatus 14, venting port 9, loam cake 4 is all made with high purity graphite.Carbon lagging material 5, carbon thermal insulation layer 12 are made of loose graphite, and anti-drain cap 10 also is made of loose graphite.
Of the present inventionly be used to control the control method of straight pulling silicon single crystal furnace thermal field air-flow and the advantage of device is:
1. owing to utilized the control method of straight pulling silicon single crystal furnace thermal field air-flow of the present invention, gas flow mode in the control silicon crystal growth room makes improve the work-ing life of heating element, and low is 80 crystal growth cycles, the average 97 crystal growth cycles, best 150 crystal growth cycles.Be improved the work-ing life of quartz crucible supporting apparatus, and what the work-ing life of quartz crucible supporting apparatus was low is 20 crystal growth cycles, average 27 crystal growth cycles, best 34 crystal growth cycles.Crystal melt back number of times is reduced, and what the number of times of crystal melt back was general is 0.5 time, and average 1 time, the poorest is 3 times; And with gas flow mode in the silicon crystal growth room of prior art, what the work-ing life of heating element was low is 40 crystal growth cycles, average 50 crystal growth cycles, be preferably 64 crystal growth cycles, what the life-span of quartz crucible supporting apparatus was low is 12 crystal growth cycles, average 14 crystal growth cycles, be preferably 16 crystal growth cycles, what crystal melt back number of times was general is 1 time, average 2 times, differs from most 6 times.So utilize technical scheme of the present invention and device thereof, reduced starting material and electric energy consumption, reduced production cost, increased the output of silicon single crystal in the unit time.
2. the sealing gas operated device that is used to control the straight pulling silicon single crystal furnace thermal field air-flow of the present invention, it is simple in structure, and raw material is easy to get, and in use produces good technique effect
Four, description of drawings
Fig. 1 cuts the single crystal growing furnace diagrammatic cross-section of krousky (vertical pulling) manufactured silicon single-crystal; Omitted supporting structure, bell, crystal in the drawings and lifted cabin, lifting rod, form part, the single crystal growing furnace shell is made by stainless steel.Among the figure, 1 is seed crystal, 3 is silicon single crystal bar, 4 is loam cake, and 5 is the carbon lagging material, and 6 is the temperature signal hole, 7 is that graphite heater, 8 is crystal growing chamber, 9 ' is venting port, and 10 is that anti-drain cap, 11 is that graphite axis, 12 is that carbon thermal insulation layer, 13 is that silicon melt, 14 is the quartz crucible supporting apparatus, and 16 is that quartz crucible, 17 is that heat-preservation cylinder, 18 is base.
Gas flow synoptic diagram in Fig. 2 prior art silicon crystal growth room, among the figure, 1 is seed crystal, 2 is the argon gas flow direction, 3 is that silicon single crystal bar, 4 is that loam cake, 5 is that carbon lagging material, 6 is that temperature signal hole, 7 is that graphite heater, 8 is that crystal growing chamber, 9 ' is that venting port, 10 is to prevent that drain cap, 11 is that graphite axis, 12 is that carbon thermal insulation layer, 13 is that silicon melt, 14 is the quartz crucible supporting apparatus, and 16 is that quartz crucible, 17 is that heat-preservation cylinder, 18 is a base.
Fig. 3 increases behind the sealing gas operated device in the silicon crystal growth room gas flow and shows 8 intentions.Among the figure, 1 is seed crystal, 2 is the argon gas flow direction, 3 is that silicon single crystal bar, 4 is that loam cake, 5 is that carbon lagging material, 6 is that temperature signal hole, 7 is that graphite heater, 8 is that crystal growing chamber, 9 is that venting port, 10 is to prevent that drain cap, 11 is that graphite axis, 12 is that carbon thermal insulation layer, 13 is that silicon melt, 14 is the quartz crucible supporting apparatus, 15 are the sealing gas operated device, and 16 is that quartz crucible, 17 is that heat-preservation cylinder, 18 is that base, 19 is wear ring.
Fig. 4 is installed in the sectional structure chart of sealing gas operated device 15 in the silicon crystal growth room, among the figure, 9 strut angles of making for stainless steel for the step on the wear ring, 23 for the step on the base, 22 for airway, 21 for wear ring, 20 for base, 19 for venting port, 18.
Five, embodiment
Below the present invention is further illustrated with indefiniteness embodiment, can help the better understanding to the present invention and advantageous effect thereof, and protection scope of the present invention is determined by claim.
Embodiment 1
Employed equipment as shown in Figure 3, Figure 4.At first quartz crucible 16 is put into crystal clock crucible supporting apparatus 14, to pack in the quartz crucible as the polysilicon of raw material, load onto specific seed crystal, furnace chamber closes, and be evacuated to 9Pa (being generally 6.5-11pa), heating makes unmelted polycrystalline silicon, behind unmelted polycrystalline silicon, the temperature that progressively reduces silicon melt is to 1420 ℃ near the fusing point of silicon, make quartz crucible and seed crystal reverse rotation, the speed of rotation of quartz crucible is 6rpm, and the speed of rotation of seed crystal is 15rpm, silicon seed is slowly descended, and, upwards promote seed crystal with the speed of 1.2-3.0mm/min, when waiting seed crystal to rise to 200mm with after silicon melt contacts, with pulling speed slowly to 0.5mm/min, reduce the temperature to 1416 ℃ of melt simultaneously, make the seed crystal enlarged diameter, when the seed crystal diameter increases to the low approximately 10mm of aimed dia, increase pulling speed to 2mm/min, make crystal be close to the equal diameter growth.Be so-called isodiametric growth and stage, drop to 0.7mm/min from 1.2mm/min at isodiametric growth stage pulling rate.The silicon material of in quartz crucible, storing not for a long time, pulling rate is generally 1.1mm/min, increases the about 2KW of heating power simultaneously.Make crystal diameter be changed to a back taper.When enough hour of awl point, and break away from silicon melt, the crystalline process of growth finishes, and when waiting crystal to be as cold as nearly room temperature, crystal can be taken off.
In the process of growth of silicon single-crystal, be negative pressure state in the stove, constantly charge into argon gas, between indoor graphite heater of single crystal growing furnace crystal growth and heat-preservation cylinder, the sealing gas operated device is housed, the airway upper port of sealing gas operated device is positioned at the position, upper end of graphite heater, the venting port 9 that makes the argon gas that contains silicon monoxide flow through the airway upper port and be connected with the airway lower port, under the effect of vacuum pump, discharge out of the furnace, in the process that draws silicon single-crystal, make the pressure that contains the silicon monoxide argon gas in the stove remain on 2.66×10
3Pa。The outer wall upper end of used airway 20 exceeds 50mm than airway inwall upper end, distance between the inside and outside wall of airway is 8.5mm, the heating element life-span is 101 crystal growth cycles, and be 31 crystal growth cycles the work-ing life of quartz crucible supporting apparatus, and the number of times of crystal melt back is 1 time.The experimental data that present embodiment carries out when being based on CG6000 growth furnace growth diameter Φ 150mm crystal.
Its working method of Comparative Example A An is substantially with embodiment 1, the only different equipment that are to use as shown in Figure 2, experimental result shows that heating element work-ing life is 51 crystal growth cycles, and be 13 crystal growth cycles the work-ing life of quartz crucible supporting apparatus, and crystal melt back number of times is 3 times.
Its working method and equipment is fully with embodiment 1, and the outer wall upper end of only different is used airway 20 is than the high 10mm in airway 20 inwalls upper end.
Its working method and equipment are fully with embodiment 1, and only different is that the pressure that makes stove include the silicon monoxide argon gas in the process that draws silicon single-crystal remains on 1.3 * 10
4Pa, the outer wall upper end of used airway 20 exceeds 150mm than airway inwall upper end, distance between airway 20 inside and outside walls is 14mm, 83 crystal growth cycles of the work-ing life of heating element, be 22 crystal growth cycles the work-ing life of quartz crucible supporting apparatus, and crystal melt back number of times is 2.7 times.
Comparative Examples B
Method is made substantially with embodiment 3 in its playground, the only different equipment that are to use as shown in Figure 2, experimental result shows work-ing life 43 times of graphite heater, the work-ing life of quartz crucible supporting apparatus 13 times, crystal melt back number of times is 5 times.
Its working method and equipment are fully with embodiment 1, and only different is that the argon gas pressure that makes stove include silicon monoxide in the process that draws silicon single-crystal remains on 1.3 * 10
3Pa, the outer wall upper end of used airway 20 exceeds 250mm than airway inwall upper end than airway inwall upper end, distance between the airway 20 inside and outside walls is 5mm, be 150 crystal growth cycles the work-ing life of graphite heater, 34 crystal growth cycles of the work-ing life of quartz crucible supporting apparatus.Crystal melt back number of times 0.5 time.
Comparing embodiment C
Its working method is substantially with embodiment 4, the only different equipment that are to use as shown in Figure 2, experimental result shows 64 crystal growth cycles of work-ing life of graphite heater, and in 16 crystal growth cycles of the work-ing life of quartz crucible supporting apparatus, crystal rate of recovery number of times is 1.1 times.
Claims (5)
1. the flow controlling method of air of a straight pulling silicon single crystal furnace thermal field, it is characterized in that, between indoor graphite heater of single crystal growing furnace crystal growth and heat-preservation cylinder, the sealing gas operated device is housed, the airway upper port of sealing gas operated device is positioned at the position, upper end of graphite heater, the argon gas that contains silicon monoxide the flow through upper port of airway and the venting port (9) that links to each other with the airway lower port, under the effect of vacuum pump, discharge out of the furnace.
2. according to the flow controlling method of air of a kind of straight pulling silicon single crystal furnace thermal field of claim 1, it is characterized in that the pressure that stove contains the argon gas of silicon monoxide remains on 1.3 * 10
3-1.3 * 10
4Pa.
3. sealing gas operated device that is used to control the straight pulling silicon single crystal furnace thermal field air-flow, it is characterized in that, comprise airway (20), base (18), wear ring (19), venting port (9), the outer wall of airway (20) links to each other with the step (21) of base (18), the inwall of airway (20) links to each other with the step (22) of wear ring (19), base (18) places on the wear ring (19), wear ring (19) places on the wall of venting port (9), and the upper port of venting port (9) is connected with the lower port of airway (20).
4. according to a kind of sealing gas operated device that is used to control the straight pulling silicon single crystal furnace thermal field air-flow of claim 3, it is characterized in that the outer wall upper end of airway (20) exceeds 10mm-300mm than the upper end of the inwall of airway (20).
5. according to claim 3,4 one of them a kind of tightness systems that are used to control the straight pulling silicon single crystal furnace thermal field air-flow, it is characterized in that the distance between the inside and outside wall of airway (20) is 2-15mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 01136561 CN1205362C (en) | 2001-10-18 | 2001-10-18 | Gas flow control method of thermal field of vertical pulling silicon monocrystal furnace and its device |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 01136561 CN1205362C (en) | 2001-10-18 | 2001-10-18 | Gas flow control method of thermal field of vertical pulling silicon monocrystal furnace and its device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1412353A true CN1412353A (en) | 2003-04-23 |
| CN1205362C CN1205362C (en) | 2005-06-08 |
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|---|---|---|---|
| CN 01136561 Expired - Lifetime CN1205362C (en) | 2001-10-18 | 2001-10-18 | Gas flow control method of thermal field of vertical pulling silicon monocrystal furnace and its device |
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Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2008067700A1 (en) * | 2006-12-06 | 2008-06-12 | Tianjin Huanou Semiconductor Material And Technology Co., Ltd. | Dislocation-free silicon monocrystal, its preparation method and a graphite heating device used |
| CN101319351B (en) * | 2008-06-26 | 2010-04-21 | 常州中弘光伏有限公司 | Monocrystalline growing furnace |
| CN101319352B (en) * | 2008-06-26 | 2010-06-02 | 常州中弘光伏有限公司 | Vertical pulling type single crystal growth furnace |
| CN102002753A (en) * | 2010-12-13 | 2011-04-06 | 天津市环欧半导体材料技术有限公司 | Processing method of phi 8-inch <110> czochralski silicon and thermal system thereof |
| CN102453959A (en) * | 2010-10-20 | 2012-05-16 | 中央大学 | Flow guiding apparatus for crystal growth furnace |
| CN101525765B (en) * | 2009-04-17 | 2012-09-26 | 江苏华盛天龙光电设备股份有限公司 | Thermal field of silicon single crystal growth |
| CN102797036A (en) * | 2011-05-26 | 2012-11-28 | 浙江思博恩新材料科技有限公司 | Polycrystalline silicon ingot, manufacturing method thereof and solar cell |
| CN102797037A (en) * | 2011-05-26 | 2012-11-28 | 浙江思博恩新材料科技有限公司 | Polycrystalline silicon ingot, manufacturing method thereof and solar cell |
| CN102797035A (en) * | 2011-05-26 | 2012-11-28 | 浙江思博恩新材料科技有限公司 | Polycrystalline silicon ingot and preparation method thereof and solar cell |
| CN102925958A (en) * | 2012-08-16 | 2013-02-13 | 江西旭阳雷迪高科技股份有限公司 | Method for improving poly-crystal quality by using re-melting technology |
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| CN100415945C (en) * | 2005-12-26 | 2008-09-03 | 北京有色金属研究总院 | Method of improving life of straight pulling silicon single crystal furnace thermal field component and single crystal furnace |
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2001
- 2001-10-18 CN CN 01136561 patent/CN1205362C/en not_active Expired - Lifetime
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2008067700A1 (en) * | 2006-12-06 | 2008-06-12 | Tianjin Huanou Semiconductor Material And Technology Co., Ltd. | Dislocation-free silicon monocrystal, its preparation method and a graphite heating device used |
| CN101319351B (en) * | 2008-06-26 | 2010-04-21 | 常州中弘光伏有限公司 | Monocrystalline growing furnace |
| CN101319352B (en) * | 2008-06-26 | 2010-06-02 | 常州中弘光伏有限公司 | Vertical pulling type single crystal growth furnace |
| CN101525765B (en) * | 2009-04-17 | 2012-09-26 | 江苏华盛天龙光电设备股份有限公司 | Thermal field of silicon single crystal growth |
| CN102453959A (en) * | 2010-10-20 | 2012-05-16 | 中央大学 | Flow guiding apparatus for crystal growth furnace |
| CN102002753A (en) * | 2010-12-13 | 2011-04-06 | 天津市环欧半导体材料技术有限公司 | Processing method of phi 8-inch <110> czochralski silicon and thermal system thereof |
| CN102002753B (en) * | 2010-12-13 | 2011-11-16 | 天津市环欧半导体材料技术有限公司 | Processing method of phi 8-inch <110> czochralski silicon and thermal system thereof |
| CN102797036A (en) * | 2011-05-26 | 2012-11-28 | 浙江思博恩新材料科技有限公司 | Polycrystalline silicon ingot, manufacturing method thereof and solar cell |
| CN102797037A (en) * | 2011-05-26 | 2012-11-28 | 浙江思博恩新材料科技有限公司 | Polycrystalline silicon ingot, manufacturing method thereof and solar cell |
| CN102797035A (en) * | 2011-05-26 | 2012-11-28 | 浙江思博恩新材料科技有限公司 | Polycrystalline silicon ingot and preparation method thereof and solar cell |
| CN102797036B (en) * | 2011-05-26 | 2016-06-15 | 浙江昱辉阳光能源有限公司 | Polycrystal silicon ingot and manufacture method, solaode |
| CN102925958A (en) * | 2012-08-16 | 2013-02-13 | 江西旭阳雷迪高科技股份有限公司 | Method for improving poly-crystal quality by using re-melting technology |
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