CN1133760C - Graphite boat with mother liquid remover for light-phase epitaxial growth of Te-Cd-Hg film - Google Patents
Graphite boat with mother liquid remover for light-phase epitaxial growth of Te-Cd-Hg film Download PDFInfo
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- CN1133760C CN1133760C CNB011321318A CN01132131A CN1133760C CN 1133760 C CN1133760 C CN 1133760C CN B011321318 A CNB011321318 A CN B011321318A CN 01132131 A CN01132131 A CN 01132131A CN 1133760 C CN1133760 C CN 1133760C
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- slide block
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- base plate
- mother liquid
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Abstract
The present invention discloses a graphite boat with a mother liquid remover for the growth of telluride-cadmium-mercury light-phase epitaxial thin film materials, which comprises a bottom board, a slide block and a bottom seat used for fixing the bottom board and the slide block, wherein a pore canal is formed on the bottom board, a quartz spacer used for adjusting the height of a substrate and the pore canal is arranged in the pore canal, and the substrate is placed on the quartz spacer; a pore canal used for containing mother liquid is formed on the slide block, and the pore canal is characterized in that two rectangular small grooves are formed on the surface of the slide block contacting the bottom board behind the pore canal, and the length direction of the small grooves is perpendicular to the travel direction of the slide block; the small grooves complete the collection of residual mother liquid on thin films after the end of the growth of epitaxial thin films by the movement of the slide block. Telluride-cadmium-mercury liquid phase epitaxial layers without decontamination fluid and with bright surfaces like mirror faces can be grown by adopting the device, and the device is suitable for the removal of residual mother liquid on liquid phase epitaxial layers of compound semiconductors in II-VI groups or III-V groups additionally.
Description
Technical field
The present invention relates to the growth technology of film monocrystalline, particularly a kind of graphite boat that has mother liquid remover that is used for phase epitaxial growth of Te-Cd-Hg film.
Background technology
Used graphite boat is to be made of base, base plate and slide block in the push boat type phase epitaxial growth of Te-Cd-Hg film process at present.Have one and substrate duct of a size on the base plate, be used for placing substrate, also have a duct on the slide block and be used to place mother liquor, by moving slider or base plate mother liquor is contacted with substrate, epitaxy thin film material layer on substrate.Because the surface tension of tellurium is less, is about 177dyn/cm in the time of 500 ℃, so when growing in a horizontal manner, mother liquor flows everywhere, behind the growth ending, removes slide block, is difficult to turn down mother liquor by the slide block plane to the greatest extent, the result causes mother liquor and epitaxial film to stick, and sees Fig. 3.The mother liquor that sticks is when cooling, because different with the thermal stresses of epitaxial film, meeting produce a large amount of dislocations around mother liquor, begin can expand 2-3mm from the mother liquor edge always.If substrate is of a size of 20 * 20mm
2, the mother liquor maximum that sticks can reach 7 * 20mm
2, accounted for nearly one-third of the area, if stress area is on every side removed, actual available area is 10 * 20mm again
2, have only half of original Substrate Area, thus mother liquor stick the effective usable floor area that has reduced the rheotaxy film greatly.See MGAstles, N Shaw and G Blackmore Semicond Sci Technol Vol 8 (1993) S211; Yasumura K, Murakmi T, et al., J.Cryst.Growth, Vol 117,1992, and 20.
The purpose of this invention is to provide a kind of graphite boat that has mother liquid remover, remove the residual mother liquor of epi-layer surface, improve effective usable floor area of epitaxial film by clearing device.
The graphite boat that has mother liquid remover of the present invention comprises: the base of base plate, slide block and fixed base plate and slide block, base plate are placed on the base, and slide block is put on base plate.Have on the base plate and epitaxial substrate duct of a size, the duct is built-in with the quartzy pad of regulating substrate and opening of the channel height, places substrate on the quartzy pad.Have the duct of placing mother liquor on the slide block, the size in duct is slightly less than substrate, be advisable with the peripheral 0.5mm that leaves substrate, on the back in duct and the contacted slider surface of base plate, have two rectangular sulculuses, the length direction of sulculus and the travel direction of slide block are perpendicular, the cross-sectional shape of sulculus be low early and high after likeness in form one scoop, more thorough for making sulculus collect residual mother liquor, the length of sulculus should be greater than substrate length of side 1-2mm.When epitaxial growth film, by moving slider or base mother liquor is covered on the substrate, carry out film growth, behind the growth ending, sulculus is to finish by moving of slide block to collect the mother liquor that remains in after epitaxial film growth finishes on the epitaxial film.
Great advantage of the present invention is: increased the sulculus that is similar to a scoop in the slide block, after epitaxial film growth finishes, removed the mother liquor that remains on the epitaxial film effectively by the moving of slide block and the surface-tension energy of mother liquor.
This device mainly is the removing that is used for the residual mother liquor of mercury cadmium telluride rheotaxial, also can be used as the removal of the residual mother liquor in other II-VI families or the rheotaxy of III-V compound semiconductor certainly.
Description of drawings
Fig. 1 is for laying the synoptic diagram of quartzy pad and substrate on the base plate in the rheotaxy graphite boat;
Fig. 2 moves synoptic diagram when carrying out epitaxy on substrate for mother liquor on the slide block in the rheotaxy graphite boat;
Fig. 3 removes the synoptic diagram of residual mother liquor from substrate for mother liquor behind the growth ending;
Fig. 4 has two sulculuses for the present invention on slide block, the synoptic diagram that residue mother liquor on the substrate is scraped off;
Fig. 5 has the orthographic plan of two sulculuses for slide block and the contacted one side of base plate;
Fig. 6 is the synoptic diagram in three gaps on the graphite base plate.
Embodiment
As shown in Figure 4, the graphite boat that has mother liquid remover of the present invention comprises: the base 9 of base plate 1, slide block 2 and fixed base plate and slide block, and base plate is placed on the base, and slide block is put on base plate.
(1) slide block
Have a duct 11 on the slide block, as placing mother liquor usefulness, the undersized in duct is advisable with the peripheral 0.5mm that leaves substrate, if substrate is of a size of 20 * 20mm in substrate
2, then the duct is of a size of 19 * 19mm
2Be unlikely to like this to flow down the slit of mother liquor between substrate and base plate, and then back, duct, have two rectangular sulculuses 8 with the contacted one side of base plate, the length direction of sulculus and the travel direction of slide block are perpendicular, the length of sulculus is slightly larger than substrate, that is, if substrate is of a size of 20 * 20mm
2The length of sulculus is 22mm, the cross-sectional shape of sulculus is that low early and high after likeness in form one is scoop, the leading edge height is 1.5mm, and the back height is 2mm, and the width of sulculus is 4mm-6mm, see Fig. 4, low early and high after likeness in form one is the sulculus of scoop, and slide block when mobile, is removed residual mother liquor as dozer on base plate.
(2) graphite base plate
Have the duct 10 of placing quartzy pad and substrate on the graphite base plate, as shown in Figure 6, below quartzy pad 4 is placed on, substrate 5 is placed on the quartzy pad, quartzy pad is to leave opening of the channel height usefulness as regulating substrate, several gaps below in concrete operating process, also should considering to exist, it is gap d between base plate 1 and the base 9, gap f between quartzy pad 4 and the base plate 1, gap e between quartzy pad 4 and the substrate 5, by measuring these gaps all less than 5um, and therefore the irregularity degree of quartzy pad and substrate considers above-mentioned factor also less than 5um, after putting into substrate, the gap of substrate and slide block should be 35um, and 15um is the thickness of epitaxial thin-film layer 6, and the 20um that stays is above-mentioned gap and irregular superposition.If epitaxial film 6 growth backs are very close to each other, the surface can give slide block 2 scratches so, if the growth post gap is too big, the surface can stay a lot of mother liquors so.
Because the thickness of substrate 5 is difficult to accurately control when polishing, fluctuating of 10um generally all arranged, therefore to select the quartzy pad 4 of different thickness to match with it.The thickness of quartzy pad is differential to be 20um, and by the control of the etching time before the substrate dress boat, the gap that generally can be controlled in substrate and slide block 2 basically is 35um again.
If base plate 1 uses thickness gauge at four angular measurements after putting into quartzy pad 4, the height of a+b as shown in Figure 1, and the height of Δ (a+b) is controlled at less than 5um, the gap maximum of putting into substrate 5 its final 35um of back also has the variation of 15um, therefore the various gaps of careful adjusting, reduce the variation in the gap of 35um, the use of adding two sulculuses 8 in the slide block 2 can make epitaxial film 6 surfaces neither abrade, and is not stained with liquid again as far as possible.
The enforcement of a whole set of operation is the thickness of measuring substrate 5 earlier, select the quartzy pad 4 that matches again, put into the height of base plate 1 back at four angular measurement a+b, and the height of Δ (a+b) is controlled in the 5um, the thickness of controlling substrate 5 with etching reagent is b, the height of a that stays is that epitaxial film 6 adds 20um, behind growth ending, because residual mother liquor has certain force of strain, scraping through two sulculuses 8 when slide block moves, the epitaxial film laminar surface is the noresidue mother liquor both, does not abrade the thin film layer surface again.
Designer of the present invention is Cd at substrate
0.96Zn
0.04Te, thickness 890um, size 20 * 20mm
2, adopting to grow the surface behind this device as bright finish, nothing is stained with the Hg of liquid
0.77Cd
0.23Te epitaxial layer of liquid phase, thickness are 15um, and the infrared response wavelength is about 8um.Be of a size of 20 * 30mm
2, thickness is 900um, Cd
0.96Zn
0.04On the Te substrate, adopt to grow behind this device not have and be stained with liquid, surface-brightening Hg
0.774Cd
0.226Te epitaxial layer of liquid phase, thickness are 15um, and the infrared response wavelength is about 10um.Above-mentioned liquid-phase epitaxial material is all successful produces 256 yuan of alignments and 64 * 64 yuan of face battle array infrared focus planes.
Claims (2)
1. graphite boat that has mother liquid remover that is used for phase epitaxial growth of Te-Cd-Hg film comprises: the base (9) of base plate (1), slide block (2) and fixed base plate and slide block, and base plate is placed on the base, and slide block is put on base plate;
A. have on the base plate and epitaxial substrate (5) duct of a size (10), the duct is built-in with the quartzy pad (4) of regulating substrate and opening of the channel height, places substrate (5) on the quartzy pad;
B. have the duct (11) of placing mother liquor (3) on the slide block, the size in duct is slightly less than substrate (5), is advisable with the peripheral 0.5mm that leaves substrate; It is characterized in that:
C. have two rectangular sulculuses (8) on the back of duct (11) and the contacted slide block of base plate (1) (2) face, the length direction of sulculus and the travel direction of slide block are perpendicular.
2. the graphite boat that has mother liquid remover that is used for phase epitaxial growth of Te-Cd-Hg film according to one kind of claim 1., it is characterized in that: the cross-sectional shape of said sulculus (8) is that low early and high after likeness in form one is scoop, the length of sulculus is slightly larger than substrate, is advisable to exceed substrate edge two 1mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB011321318A CN1133760C (en) | 2001-11-07 | 2001-11-07 | Graphite boat with mother liquid remover for light-phase epitaxial growth of Te-Cd-Hg film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB011321318A CN1133760C (en) | 2001-11-07 | 2001-11-07 | Graphite boat with mother liquid remover for light-phase epitaxial growth of Te-Cd-Hg film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1360090A CN1360090A (en) | 2002-07-24 |
| CN1133760C true CN1133760C (en) | 2004-01-07 |
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| CNB011321318A Expired - Fee Related CN1133760C (en) | 2001-11-07 | 2001-11-07 | Graphite boat with mother liquid remover for light-phase epitaxial growth of Te-Cd-Hg film |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101739606B (en) * | 2008-11-19 | 2014-03-26 | 北京理工大学 | Raw material-saving one-dimensional stock-cutting method |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN100497754C (en) * | 2007-08-22 | 2009-06-10 | 中国科学院上海技术物理研究所 | Graphite boat for improving mercury cadmium telluride rheotaxy membrane surface shape |
| CN102181922B (en) * | 2011-03-16 | 2012-11-14 | 中国科学院上海技术物理研究所 | Quartz container used for isothermal crystal vapor phase epitaxy process |
| CN103849929B (en) * | 2014-01-17 | 2016-08-17 | 中国科学院上海技术物理研究所 | A kind of specimen holder for impregnated mercury cadmium telluride rheotaxial |
| CN104562186A (en) * | 2014-12-09 | 2015-04-29 | 中国科学院上海技术物理研究所 | Combined method for purifying mother solution applicable to liquid phase epitaxial growth |
| CN106637390A (en) * | 2016-12-22 | 2017-05-10 | 中国电子科技集团公司第十研究所 | Graphite boat for epitaxial growth of horizontal liquid phase of mercury cadmium telluride thin film |
| CN107779948A (en) * | 2017-11-30 | 2018-03-09 | 中国电子科技集团公司第四十八研究所 | A kind of graphite boat for horizontal rheotaxial growth |
| CN109402729B (en) * | 2018-09-20 | 2020-09-01 | 中国电子科技集团公司第十一研究所 | Device and method for automatically synthesizing and cooling mercury cadmium telluride growth solution |
| CN111876825A (en) * | 2020-07-28 | 2020-11-03 | 中国电子科技集团公司第十一研究所 | Adjustable graphite boat for liquid phase epitaxy process |
| CN112080796B (en) * | 2020-09-21 | 2021-04-13 | 北京智创芯源科技有限公司 | Horizontal liquid phase epitaxial graphite boat, growth system, epitaxial method and growth method |
| CN114481305B (en) * | 2020-10-26 | 2023-06-23 | 昆明物理研究所 | Graphite boat capable of automatically taking slices and used for horizontal push boat type tellurium-cadmium-mercury liquid phase epitaxy and method |
| CN113930839A (en) * | 2021-09-29 | 2022-01-14 | 中国电子科技集团公司第十一研究所 | Graphite boat for liquid phase epitaxy and use method thereof |
| CN116770421B (en) * | 2023-07-03 | 2023-12-01 | 北京智创芯源科技有限公司 | Graphite boat for horizontal liquid phase epitaxial growth |
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2001
- 2001-11-07 CN CNB011321318A patent/CN1133760C/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101739606B (en) * | 2008-11-19 | 2014-03-26 | 北京理工大学 | Raw material-saving one-dimensional stock-cutting method |
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| CN1360090A (en) | 2002-07-24 |
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