CN1133760C - A graphite boat with a mother liquid removal device for the growth of mercury cadmium telluride liquid phase epitaxial thin film materials - Google Patents
A graphite boat with a mother liquid removal device for the growth of mercury cadmium telluride liquid phase epitaxial thin film materials Download PDFInfo
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- CN1133760C CN1133760C CNB011321318A CN01132131A CN1133760C CN 1133760 C CN1133760 C CN 1133760C CN B011321318 A CNB011321318 A CN B011321318A CN 01132131 A CN01132131 A CN 01132131A CN 1133760 C CN1133760 C CN 1133760C
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- 239000007788 liquid Substances 0.000 title claims abstract description 24
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 14
- 229910002804 graphite Inorganic materials 0.000 title claims abstract description 14
- 239000010439 graphite Substances 0.000 title claims abstract description 14
- 239000007791 liquid phase Substances 0.000 title abstract description 10
- 229910000661 Mercury cadmium telluride Inorganic materials 0.000 title abstract description 6
- 239000000463 material Substances 0.000 title abstract description 6
- MCMSPRNYOJJPIZ-UHFFFAOYSA-N cadmium;mercury;tellurium Chemical compound [Cd]=[Te]=[Hg] MCMSPRNYOJJPIZ-UHFFFAOYSA-N 0.000 title abstract description 5
- 239000010409 thin film Substances 0.000 title abstract description 4
- 239000000758 substrate Substances 0.000 claims abstract description 47
- 239000012452 mother liquor Substances 0.000 claims abstract description 19
- 230000002093 peripheral effect Effects 0.000 claims 1
- 230000001105 regulatory effect Effects 0.000 claims 1
- 239000010408 film Substances 0.000 abstract description 16
- 239000010453 quartz Substances 0.000 abstract description 16
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 16
- 125000006850 spacer group Chemical group 0.000 abstract description 5
- 150000001875 compounds Chemical class 0.000 abstract description 2
- 239000004065 semiconductor Substances 0.000 abstract description 2
- 238000010586 diagram Methods 0.000 description 5
- 238000004943 liquid phase epitaxy Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 2
- 238000003491 array Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000006748 scratching Methods 0.000 description 1
- 230000002393 scratching effect Effects 0.000 description 1
- 230000035882 stress Effects 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
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- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
本发明公开了一种用于碲镉汞液相外延薄膜材料生长的带有母液清除装置的石墨舟,包括:底板、滑块以及固定底板和滑块的底座,底板上开有一孔道,孔道内置有调节衬底与孔道口高度的石英垫片,石英垫片上放置衬底。滑块上开有放置母液的孔道,它的特征是:在孔道的后面与底板相接触的滑块面上开有二个长方形的小槽,小槽的长度方向与滑块的移动方向相垂直,小槽是通过滑块的移动来完成收集外延薄膜生长结束后残留在薄膜上的母液。采用本装置可生长出表面如镜面一样光亮,无沾液的HgCdTe液相外延层,而且本装置也适用于II-VI族或III-V族化合物半导体的液相外延层上残留母液的去除。The invention discloses a graphite boat with a mother liquid removal device for the growth of mercury cadmium telluride liquid phase epitaxial thin film materials, comprising: a bottom plate, a slider and a base for fixing the bottom plate and the slider, a hole is opened on the bottom plate, and the hole is built in There is a quartz spacer to adjust the height of the substrate and the opening of the hole, and the substrate is placed on the quartz spacer. There is a channel for placing the mother liquid on the slider. Its characteristic is that there are two small rectangular grooves on the surface of the slider that is in contact with the bottom plate behind the channel. The length direction of the small grooves is perpendicular to the moving direction of the slider. , the small groove collects the mother liquor remaining on the epitaxial film after the growth of the epitaxial film is completed through the movement of the slider. The device can grow a HgCdTe liquid phase epitaxial layer with a surface as bright as a mirror and without liquid, and the device is also suitable for removing residual mother liquid on the liquid phase epitaxial layer of II-VI or III-V compound semiconductors.
Description
技术领域Technical field
本发明涉及薄膜单晶的外延生长技术,特别是一种用于碲镉汞液相外延薄膜材料生长的带有母液清除装置的石墨舟。The invention relates to the epitaxial growth technology of thin film single crystal, in particular to a graphite boat with a mother liquor cleaning device used for the growth of mercury cadmium telluride liquid phase epitaxial thin film material.
背景技术 Background technique
目前推舟式碲镉汞液相外延薄膜材料生长过程中所用的石墨舟是由底座、底板和滑块构成。底板上开有一和衬底一样大小的孔道,用来放置衬底,滑块上也开有一孔道用于放置母液,通过移动滑块或者底板使母液与衬底相接触,在衬底上外延生长一层薄膜材料。由于碲的表面张力较小,在500℃时约为177dyn/cm,所以以水平方式生长时,母液到处流动,生长结束后,移去滑块,尽靠滑块平面是难以推掉母液的,结果导致母液与外延层沾连,见图3。沾连的母液在冷却时,由于和外延薄膜的热应力不同,会在母液周围产生大量的位错,从母液边缘开始一直可扩展2-3mm。如果衬底的尺寸为20×20mm2,沾连的母液最大可达7×20mm2,占了近三分之一的面积,如果再把周围的应力区域去掉,实际可用的面积为10×20mm2,只有原来衬底面积的一半,因此母液的沾连大大的降低了液相外延薄膜的有效使用面积。见MGAstles,N Shaw and G Blackmore Semicond Sci Technol Vol 8(1993)S211;Yasumura K,Murakmi T,et al.,J.Cryst.Growth,Vol 117,1992,20。At present, the graphite boat used in the push-boat type mercury cadmium telluride liquid phase epitaxy film material growth process is composed of a base, a bottom plate and a slider. A hole with the same size as the substrate is opened on the bottom plate for placing the substrate, and a hole is also opened on the slider for placing the mother liquid. By moving the slider or the bottom plate, the mother liquid is in contact with the substrate, and epitaxial growth is performed on the substrate. A layer of film material. Since the surface tension of tellurium is small, it is about 177dyn/cm at 500°C, so when growing horizontally, the mother liquor flows everywhere. After the growth is over, remove the slider, and it is difficult to push off the mother liquor by relying on the plane of the slider. As a result, the mother liquor is attached to the epitaxial layer, as shown in Figure 3. When the bonded mother liquid is cooled, due to the different thermal stress from the epitaxial film, a large number of dislocations will be generated around the mother liquid, which can expand 2-3mm from the edge of the mother liquid. If the size of the substrate is 20×20mm 2 , the maximum amount of mother liquor to be adhered can reach 7×20mm 2 , accounting for nearly one-third of the area. If the surrounding stress area is removed, the actual usable area is 10×20mm 2. It is only half of the original substrate area, so the adhesion of the mother liquid greatly reduces the effective use area of the liquid phase epitaxial film. See MGAstles, N Shaw and G Blackmore Semicond Sci Technol Vol 8 (1993) S211; Yasumura K, Murakmi T, et al., J. Cryst. Growth, Vol 117, 1992, 20.
本发明的目的是提供一种带有母液清除装置的石墨舟,通过清除装置来除去外延层表面残留的母液,提高外延薄膜的有效使用面积。The object of the present invention is to provide a graphite boat with a mother liquor removal device, through which the mother liquor remaining on the surface of the epitaxial layer is removed, and the effective use area of the epitaxial film is increased.
本发明的带有母液清除装置的石墨舟包括:底板、滑块以及固定底板和滑块的底座,底板放在底座上,滑块置在底板的上面。底板上开有与外延衬底一样大小的孔道,孔道内置有调节衬底与孔道口高度的石英垫片,石英垫片上放置衬底。滑块上开有放置母液的孔道,孔道的大小略小于衬底,以离开衬底的周边0.5mm为宜,在孔道的后面与底板相接触的滑块面上开有二个长方形的小槽,小槽的长度方向与滑块的移动方向相垂直,小槽的截面形状为前低后高形似一把铲子,为使小槽收集残留母液更彻底,小槽的长度应大于衬底边长1-2mm。在外延生长薄膜时,通过移动滑块或底座使母液覆盖在衬底上,进行薄膜生长,生长结束后,小槽是通过滑块的移动来完成收集外延薄膜生长结束后残留在外延薄膜上的母液。The graphite boat with the mother liquid removal device of the present invention comprises: a bottom plate, a slide block and a base for fixing the bottom plate and the slide block, the bottom plate is placed on the base, and the slide block is placed on the top of the bottom plate. A hole with the same size as the epitaxial substrate is opened on the bottom plate, and a quartz spacer for adjusting the height of the substrate and the opening of the hole is built in the hole, and the substrate is placed on the quartz spacer. There is a channel for placing the mother liquid on the slider. The size of the channel is slightly smaller than the substrate. It is advisable to be 0.5mm away from the periphery of the substrate. There are two small rectangular grooves on the surface of the slider that is in contact with the bottom plate behind the channel. , the length direction of the small groove is perpendicular to the moving direction of the slider. The cross-sectional shape of the small groove is low at the front and high at the rear, which looks like a shovel. In order to make the small groove collect the residual mother liquor more thoroughly, the length of the small groove should be longer than the side length of the substrate 1-2mm. During the epitaxial growth of the film, the mother liquid is covered on the substrate by moving the slider or the base, and the film is grown. After the growth is completed, the small groove is collected by the movement of the slider to collect the epitaxial film remaining on the epitaxial film. mother liquor.
本发明的最大优点是:滑块中增加了形似一把铲子的小槽,在外延薄膜生长结束后,通过滑块的移动和母液的表面张力能有效地除去残留在外延薄膜上的母液。The greatest advantage of the present invention is that a small groove shaped like a shovel is added to the slider, and the mother liquor remaining on the epitaxial film can be effectively removed by the movement of the slider and the surface tension of the mother liquor after the growth of the epitaxial film is completed.
本装置主要是用于碲镉汞液相外延中残留母液的清除,当然也可用作其他II-VI族或III-V族化合物半导体液相外延中的残留母液的去除。The device is mainly used for removing residual mother liquor in mercury cadmium telluride liquid phase epitaxy, and of course it can also be used for removing residual mother liquor in liquid phase epitaxy of other II-VI or III-V compound semiconductors.
附图说明Description of drawings
图1为液相外延石墨舟中底板上安放石英垫片和衬底的示意图;Fig. 1 is the schematic diagram of placing quartz gasket and substrate on the base plate of liquid phase epitaxial graphite boat;
图2为液相外延石墨舟中滑块上母液移在衬底上进行外延生长时的示意图;Fig. 2 is the schematic diagram when the mother liquid on the slider in the liquid phase epitaxial graphite boat is moved on the substrate for epitaxial growth;
图3为生长结束后母液从衬底上移开有残留母液的示意图;Fig. 3 is a schematic diagram of removing the mother liquid from the substrate after the end of the growth with residual mother liquid;
图4为本发明在滑块上开有两条小槽,把衬底上残余母液刮去的示意图;Fig. 4 is the schematic diagram that the present invention has two small grooves on the slider to scrape off the residual mother liquor on the substrate;
图5为滑块与底板相接触的一面开有两条小槽的平面图;Fig. 5 is a plan view with two small grooves on the side where the slider contacts the bottom plate;
图6为石墨底板上三个间隙的示意图。Fig. 6 is a schematic diagram of three gaps on the graphite base plate.
具体实施方式 Detailed ways
如图4所示,本发明的带有母液清除装置的石墨舟包括:底板1、滑块2以及固定底板和滑块的底座9,底板放在底座上,滑块置在底板的上面。As shown in Figure 4, the graphite boat that has mother liquor cleaning device of the present invention comprises: base plate 1, slide block 2 and the base 9 of fixing base plate and slide block, base plate is placed on the base, and slide block places above the base plate.
(1)滑块(1) slider
滑块上开有一孔道11,作为放置母液用,孔道的尺寸略小于衬底,以离开衬底的周边0.5mm为宜,如果衬底的尺寸为20×20mm2,则孔道的尺寸为19×19mm2,这样不至于母液从衬底与底板之间的缝隙中流下去,紧接着孔道后面,与底板相接触的一面开有两条长方形的小槽8,小槽的长度方向与滑块的移动方向相垂直,小槽的长度略大于衬底,即,如果衬底的尺寸为20×20mm2,小槽的长度为22mm,小槽的截面形状为前低后高形似一把铲子,前缘高度为1.5mm,后边高度为2mm,小槽的宽度为4mm-6mm,见图4,前低后高形似一把铲子的小槽,滑块在底板上移动时,象推土机一样把残留母液去除。There is a hole 11 on the slider, which is used to place the mother liquid. The size of the hole is slightly smaller than the substrate, and it is better to be 0.5mm away from the periphery of the substrate. If the size of the substrate is 20×20mm 2 , the size of the hole is 19× 19mm 2 , so that the mother liquor will not flow down from the gap between the substrate and the bottom plate. Immediately behind the channel, there are two rectangular small grooves 8 on the side that is in contact with the bottom plate. The length direction of the small grooves and the movement of the slider The direction is perpendicular, and the length of the small groove is slightly longer than the substrate, that is, if the size of the substrate is 20×20mm 2 , the length of the small groove is 22mm, the cross-sectional shape of the small groove is low at the front and high at the back, like a shovel, and the front edge The height is 1.5mm, the rear height is 2mm, and the width of the small groove is 4mm-6mm, as shown in Figure 4. The front is low and the rear is high like a small groove of a shovel. When the slider moves on the bottom plate, it removes the residual mother liquor like a bulldozer .
(2)石墨底板(2) Graphite bottom plate
石墨底板上开有放置石英垫片和衬底的孔道10,如图6所示,石英垫片4放在下面,衬底5放在石英垫片上,石英垫片是作为调节衬底离开孔道口高度用,在具体的操作过程中还应考虑存在下面几个间隙,即底板1与底座9之间间隙d,石英垫片4与底板1之间间隙f,石英垫片4与衬底5之间间隙e,通过测量这些间隙都小于5um,而且石英垫片与衬底的不平整度也小于5um,因此考虑到上述因素,放入衬底后,衬底与滑块的间隙应为35um,15um是外延薄膜层6的厚度,留下的20um为上述的间隙与不平整的迭加。如果外延层6生长后没有间隙,那么表面会给滑块2擦伤,如果生长后间隙太大,那么表面会留下很多母液。The graphite base plate has a
由于衬底5的厚度在抛光时很难精确控制,一般都有10um的上下浮动,因此要选择不同厚度的石英垫片4与其相配。石英垫片的厚度级差为20um,再通过衬底装舟前的腐蚀时间的控制,一般基本上可控制在衬底与滑块2的间隙为35um。Since the thickness of the substrate 5 is difficult to precisely control during polishing, and generally fluctuates up and down by 10 um, it is necessary to select
如果底板1在放入石英垫片4后用厚度仪在四角测量,如图1所示的a+b的高度,并且把Δ(a+b)的高度控制在小于5um,放入衬底5后其最终的35um的间隙最大也有15um的变化,因此仔细调节各种间隙,尽量减少35um的间隙中的变化,再加上滑块2中的两个小槽8的使用可使得外延层6表面既不擦伤,又没有沾液。If the bottom plate 1 is measured at the four corners with a thickness meter after the
整套操作的实施是先测量衬底5的厚度,再挑选相配的石英垫片4,放入底板1后在四角测量a+b的高度,并把Δ(a+b)的高度控制在5um以内,用腐蚀剂控制衬底5的厚度为b,留下的a的高度为外延层6加上20um,在生长结束后,由于残留母液具有一定的张力,在滑块移动时经两小槽8的刮动,外延薄膜层表面既无残留母液,又没擦伤薄膜层表面。The implementation of the whole set of operations is to measure the thickness of the substrate 5 first, then select the
本发明设计人在衬底为Cd0.96Zn0.04Te,厚度890um,尺寸20×20mm2,采用本装置后生长出表面如镜面一样光亮,无沾液的Hg0.77Cd0.23Te液相外延层,厚度为15um,红外响应波长为8um左右。在尺寸为20×30mm2,厚度为900um,Cd0.96Zn0.04Te衬底上,采用本装置后生长出无沾液的,表面光亮Hg0.774Cd0.226Te液相外延层,厚度为15um,红外响应波长为10um左右。上述液相外延材料都已成功的制作出256元线列和64×64元面阵红外焦平面。The designer of the present invention has a Cd 0.96 Zn 0.04 Te substrate, a thickness of 890um, and a size of 20×20mm 2 . After using this device, a Hg 0.77 Cd 0.23 Te liquid phase epitaxial layer with a surface as bright as a mirror and no dipping liquid is grown, with a thickness of It is 15um, and the infrared response wavelength is about 8um. On a Cd 0.96 Zn 0.04 Te substrate with a size of 20×30mm 2 and a thickness of 900um, a Hg 0.774 Cd 0.226 Te liquid-phase epitaxial layer with a thickness of 15um and an infrared response was grown without liquid after using this device. The wavelength is about 10um. All of the above liquid phase epitaxy materials have successfully produced 256-element line arrays and 64×64-element area array infrared focal planes.
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