JPS56116616A - Manufacture of semiconductor wafers - Google Patents

Manufacture of semiconductor wafers

Info

Publication number
JPS56116616A
JPS56116616A JP2000280A JP2000280A JPS56116616A JP S56116616 A JPS56116616 A JP S56116616A JP 2000280 A JP2000280 A JP 2000280A JP 2000280 A JP2000280 A JP 2000280A JP S56116616 A JPS56116616 A JP S56116616A
Authority
JP
Japan
Prior art keywords
reservoir
melts
reservoirs
materials
growth
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2000280A
Other languages
Japanese (ja)
Other versions
JPS5734644B2 (en
Inventor
Toshihiro Kusuki
Kenzo Akita
Satoshi Furumiya
Akio Yamaguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP2000280A priority Critical patent/JPS56116616A/en
Publication of JPS56116616A publication Critical patent/JPS56116616A/en
Publication of JPS5734644B2 publication Critical patent/JPS5734644B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/06—Reaction chambers; Boats for supporting the melt; Substrate holders
    • C30B19/063—Sliding boat system

Abstract

PURPOSE:To try the improvement of yield by filling a plurality of growth melt materials in a reservoir for solution wherein the materials are split into small reservoirs and liquidus epitaxial growth is performed by filling obtained melts for growth in a slide boat. CONSTITUTION:A plurality of In, Ga, As, P are weighed to fill them in a reservoir 5 and a plummet 7 and a cover 8 are set. When materials are dissolved and homogenized, a pedestal 4 is moved to fit a hole with a reservoir 2 and melts 9 are filled in the reservoir 2. Finally, the remaining melts are exhausted to a reservoir 3. The lengths l2 of the pedestal 4 is longer than the width l1 of the arranged reserovirs 2 to prevent the evaporation of P, As. Next, solutions in the reservoirs 2 are solidified and taken out from the reservoirs 2 to obtain many small grains. In this composition, weighing accuracy will be improved and many melts of the same composition will be made at a time. Therefore, the yield of epitaxial wafers will be improved by using these small grains.
JP2000280A 1980-02-20 1980-02-20 Manufacture of semiconductor wafers Granted JPS56116616A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2000280A JPS56116616A (en) 1980-02-20 1980-02-20 Manufacture of semiconductor wafers

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000280A JPS56116616A (en) 1980-02-20 1980-02-20 Manufacture of semiconductor wafers

Publications (2)

Publication Number Publication Date
JPS56116616A true JPS56116616A (en) 1981-09-12
JPS5734644B2 JPS5734644B2 (en) 1982-07-24

Family

ID=12014930

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000280A Granted JPS56116616A (en) 1980-02-20 1980-02-20 Manufacture of semiconductor wafers

Country Status (1)

Country Link
JP (1) JPS56116616A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5930798A (en) * 1982-06-14 1984-02-18 エヌ・ベ−・フイリツプス・フル−イランペンフアブリケン Manufacture of plural casting simultaneously
CN103882527A (en) * 2014-01-17 2014-06-25 中国科学院上海技术物理研究所 Growing device for reducing mucus on surface of HgCdTe liquid-phase epitaxial material

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5930798A (en) * 1982-06-14 1984-02-18 エヌ・ベ−・フイリツプス・フル−イランペンフアブリケン Manufacture of plural casting simultaneously
CN103882527A (en) * 2014-01-17 2014-06-25 中国科学院上海技术物理研究所 Growing device for reducing mucus on surface of HgCdTe liquid-phase epitaxial material

Also Published As

Publication number Publication date
JPS5734644B2 (en) 1982-07-24

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