JPS51121258A - Liquid phase growth method for semiconductor thin films - Google Patents
Liquid phase growth method for semiconductor thin filmsInfo
- Publication number
- JPS51121258A JPS51121258A JP4704375A JP4704375A JPS51121258A JP S51121258 A JPS51121258 A JP S51121258A JP 4704375 A JP4704375 A JP 4704375A JP 4704375 A JP4704375 A JP 4704375A JP S51121258 A JPS51121258 A JP S51121258A
- Authority
- JP
- Japan
- Prior art keywords
- liquid phase
- thin films
- semiconductor thin
- growth method
- phase growth
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
PURPOSE: To obtain smooth crystal surface and improve reproducibility of film thickness by bringing the solute into contact with the solution to form a saturated solution and causing crystal growth after bringing the solution to supercooled condition.
COPYRIGHT: (C)1976,JPO&Japio
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4704375A JPS51121258A (en) | 1975-04-17 | 1975-04-17 | Liquid phase growth method for semiconductor thin films |
US05/675,491 US4088514A (en) | 1975-04-17 | 1976-04-09 | Method for epitaxial growth of thin semiconductor layer from solution |
DE2616700A DE2616700C2 (en) | 1975-04-17 | 1976-04-15 | Method for forming a thin layer of a semiconductor material of groups III-V by epitaxial growth, and apparatus for carrying out the method |
CA250,577A CA1072220A (en) | 1975-04-17 | 1976-04-15 | Method for epitaxial growth of thin semiconductor layer from solution |
NL7604042A NL7604042A (en) | 1975-04-17 | 1976-04-15 | PROCEDURE AND ARRANGEMENT FOR EPITAXIAL GROWTH, AS WELL AS PROPERTIES OBTAINED UNDER THE APPLICATION OF THIS PROCEDURE. |
GB15878/76A GB1514126A (en) | 1975-04-17 | 1976-04-20 | Method for epitaxial growth of thin semiconductor layer from solution |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4704375A JPS51121258A (en) | 1975-04-17 | 1975-04-17 | Liquid phase growth method for semiconductor thin films |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS51121258A true JPS51121258A (en) | 1976-10-23 |
Family
ID=12764126
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP4704375A Pending JPS51121258A (en) | 1975-04-17 | 1975-04-17 | Liquid phase growth method for semiconductor thin films |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS51121258A (en) |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4932581A (en) * | 1972-07-22 | 1974-03-25 |
-
1975
- 1975-04-17 JP JP4704375A patent/JPS51121258A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4932581A (en) * | 1972-07-22 | 1974-03-25 |
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