Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co LtdfiledCriticalToshiba Corp
Priority to JP3241976ApriorityCriticalpatent/JPS52116069A/en
Publication of JPS52116069ApublicationCriticalpatent/JPS52116069A/en
Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed
(AREA)
Abstract
PURPOSE: To effect epitaxial growth providing uniform thickness to the desired film in a narrow gap by disposing a crystal substrate on two holders arranged at a narror interval.
COPYRIGHT: (C)1977,JPO&Japio
JP3241976A1976-03-261976-03-26Device for liquid phase epitaxial growth
PendingJPS52116069A
(en)