BE777996A - FIELD-EFFECT ERASABLE MEMORY DEVICE - Google Patents

FIELD-EFFECT ERASABLE MEMORY DEVICE

Info

Publication number
BE777996A
BE777996A BE777996A BE777996A BE777996A BE 777996 A BE777996 A BE 777996A BE 777996 A BE777996 A BE 777996A BE 777996 A BE777996 A BE 777996A BE 777996 A BE777996 A BE 777996A
Authority
BE
Belgium
Prior art keywords
effect
field
memory device
erasable memory
erasable
Prior art date
Application number
BE777996A
Other languages
French (fr)
Inventor
D Frohman-Bentchkowsky
Original Assignee
Intel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Intel Corp filed Critical Intel Corp
Publication of BE777996A publication Critical patent/BE777996A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
    • H01L29/7881—Programmable transistors with only two possible levels of programmation
    • H01L29/7884—Programmable transistors with only two possible levels of programmation charging by hot carrier injection
    • H01L29/7886—Hot carrier produced by avalanche breakdown of a PN junction, e.g. FAMOS
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0416—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and no select transistor, e.g. UV EPROM

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Non-Volatile Memory (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Semiconductor Memories (AREA)
BE777996A 1971-01-15 1972-01-13 FIELD-EFFECT ERASABLE MEMORY DEVICE BE777996A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10664371A 1971-01-15 1971-01-15

Publications (1)

Publication Number Publication Date
BE777996A true BE777996A (en) 1972-05-02

Family

ID=22312502

Family Applications (1)

Application Number Title Priority Date Filing Date
BE777996A BE777996A (en) 1971-01-15 1972-01-13 FIELD-EFFECT ERASABLE MEMORY DEVICE

Country Status (8)

Country Link
JP (1) JPS5146382B1 (en)
BE (1) BE777996A (en)
CA (1) CA946524A (en)
DE (1) DE2201028C3 (en)
FR (1) FR2121824B1 (en)
GB (1) GB1383981A (en)
IT (1) IT962050B (en)
NL (1) NL7200562A (en)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3797000A (en) * 1972-12-29 1974-03-12 Ibm Non-volatile semiconductor storage device utilizing avalanche injection and extraction of stored information
US3836992A (en) * 1973-03-16 1974-09-17 Ibm Electrically erasable floating gate fet memory cell
JPS5613029B2 (en) * 1973-09-21 1981-03-25
DE2812049C2 (en) * 1974-09-20 1982-05-27 Siemens AG, 1000 Berlin und 8000 München n-channel memory FET
DE2638730C2 (en) * 1974-09-20 1982-10-28 Siemens AG, 1000 Berlin und 8000 München N-channel memory FET, method of discharging the memory gate of the n-channel memory FET and using the n-channel memory FET
DE2643987C2 (en) * 1974-09-20 1984-03-29 Siemens AG, 1000 Berlin und 8000 München n-channel memory FET
DE2445079C3 (en) * 1974-09-20 1981-06-04 Siemens AG, 1000 Berlin und 8000 München Storage field effect transistor
DE2525062C2 (en) 1975-06-05 1983-02-17 Siemens AG, 1000 Berlin und 8000 München N-channel memory FET array
DE2505816C3 (en) * 1974-09-20 1982-04-22 Siemens AG, 1000 Berlin und 8000 München Method for operating an n-channel memory FET, n-channel memory FET for carrying out the method and applying the method to the n-channel memory FETs of a memory matrix
DE2513207C2 (en) * 1974-09-20 1982-07-01 Siemens AG, 1000 Berlin und 8000 München n-channel memory FET
DE2560220C2 (en) * 1975-03-25 1982-11-25 Siemens AG, 1000 Berlin und 8000 München n-channel memory FET
JPS5554415A (en) * 1978-10-16 1980-04-21 Nippon Gakki Seizo Kk Method and device for space set averaging for reverberation waveform
DE2845328C2 (en) * 1978-10-18 1986-04-30 Deutsche Itt Industries Gmbh, 7800 Freiburg Memory transistor
JPS6162824A (en) * 1985-06-22 1986-03-31 Nippon Gakki Seizo Kk Method and apparatus for compressive intake of reverberation data
WO2001024268A1 (en) * 1999-09-24 2001-04-05 Intel Corporation A nonvolatile memory device with a high work function floating-gate and method of fabrication
US6518618B1 (en) 1999-12-03 2003-02-11 Intel Corporation Integrated memory cell and method of fabrication

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3500142A (en) * 1967-06-05 1970-03-10 Bell Telephone Labor Inc Field effect semiconductor apparatus with memory involving entrapment of charge carriers
CA813537A (en) * 1967-10-17 1969-05-20 Joseph H. Scott, Jr. Semiconductor memory device

Also Published As

Publication number Publication date
FR2121824A1 (en) 1972-08-25
DE2201028A1 (en) 1972-08-31
DE2201028C3 (en) 1981-07-09
IT962050B (en) 1973-12-20
GB1383981A (en) 1974-02-12
NL7200562A (en) 1972-07-18
JPS5146382B1 (en) 1976-12-08
FR2121824B1 (en) 1977-04-01
DE2201028B2 (en) 1979-01-18
CA946524A (en) 1974-04-30

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