AT348589B - Feldeffekttransistor - Google Patents

Feldeffekttransistor

Info

Publication number
AT348589B
AT348589B AT571373A AT571373A AT348589B AT 348589 B AT348589 B AT 348589B AT 571373 A AT571373 A AT 571373A AT 571373 A AT571373 A AT 571373A AT 348589 B AT348589 B AT 348589B
Authority
AT
Austria
Prior art keywords
field effect
effect transistor
transistor
field
effect
Prior art date
Application number
AT571373A
Other languages
English (en)
Other versions
ATA571373A (de
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP6607072A external-priority patent/JPS4924678A/ja
Priority claimed from JP570073A external-priority patent/JPS537279B2/ja
Application filed by Sony Corp filed Critical Sony Corp
Publication of ATA571373A publication Critical patent/ATA571373A/de
Application granted granted Critical
Publication of AT348589B publication Critical patent/AT348589B/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/112—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor
    • H01L31/1124—Devices with PN homojunction gate
    • H01L31/1126—Devices with PN homojunction gate the device being a field-effect phototransistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electromagnetism (AREA)
  • Ceramic Engineering (AREA)
  • Measurement Of Current Or Voltage (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
AT571373A 1972-06-30 1973-06-28 Feldeffekttransistor AT348589B (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP6607072A JPS4924678A (de) 1972-06-30 1972-06-30
JP570073A JPS537279B2 (de) 1973-01-10 1973-01-10

Publications (2)

Publication Number Publication Date
ATA571373A ATA571373A (de) 1978-07-15
AT348589B true AT348589B (de) 1979-02-26

Family

ID=26339685

Family Applications (1)

Application Number Title Priority Date Filing Date
AT571373A AT348589B (de) 1972-06-30 1973-06-28 Feldeffekttransistor

Country Status (11)

Country Link
US (1) US3868718A (de)
AT (1) AT348589B (de)
AU (1) AU475901B2 (de)
BR (1) BR7304898D0 (de)
CA (1) CA972471A (de)
DK (1) DK139248B (de)
FR (1) FR2191275B1 (de)
GB (1) GB1434652A (de)
IT (1) IT990812B (de)
NL (1) NL7309215A (de)
SE (1) SE402674B (de)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5051658A (de) * 1973-09-07 1975-05-08
JPS5061194A (de) * 1973-09-27 1975-05-26
US4328511A (en) * 1979-12-10 1982-05-04 Texas Instruments Incorporated Taper isolated ram cell without gate oxide
US4492972A (en) * 1981-08-17 1985-01-08 Honeywell Inc. JFET Monolithic integrated circuit with input bias current temperature compensation
US4442445A (en) * 1981-11-23 1984-04-10 The United States Of America As Represented By The Secretary Of The Army Planar doped barrier gate field effect transistor
US6143582A (en) * 1990-12-31 2000-11-07 Kopin Corporation High density electronic circuit modules

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2778956A (en) * 1952-10-31 1957-01-22 Bell Telephone Labor Inc Semiconductor signal translating devices
US3325654A (en) * 1964-10-09 1967-06-13 Honeywell Inc Fet switching utilizing matching equivalent capacitive means
NL6503993A (de) * 1965-03-30 1966-10-03
US3366802A (en) * 1965-04-06 1968-01-30 Fairchild Camera Instr Co Field effect transistor photosensitive modulator
US3543052A (en) * 1967-06-05 1970-11-24 Bell Telephone Labor Inc Device employing igfet in combination with schottky diode
US3585462A (en) * 1968-11-13 1971-06-15 Sprague Electric Co Semiconductive magnetic transducer
US3770988A (en) * 1970-09-04 1973-11-06 Gen Electric Self-registered surface charge launch-receive device and method for making

Also Published As

Publication number Publication date
DK139248C (de) 1979-07-02
AU475901B2 (en) 1976-09-09
US3868718A (en) 1975-02-25
SE402674B (sv) 1978-07-10
CA972471A (en) 1975-08-05
DK139248B (da) 1979-01-15
ATA571373A (de) 1978-07-15
GB1434652A (en) 1976-05-05
AU5755573A (en) 1975-01-09
FR2191275B1 (de) 1977-08-05
IT990812B (it) 1975-07-10
BR7304898D0 (pt) 1974-08-22
NL7309215A (de) 1974-01-02
FR2191275A1 (de) 1974-02-01

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