CA972471A - Junction field effect transistor - Google Patents

Junction field effect transistor

Info

Publication number
CA972471A
CA972471A CA175,331A CA175331A CA972471A CA 972471 A CA972471 A CA 972471A CA 175331 A CA175331 A CA 175331A CA 972471 A CA972471 A CA 972471A
Authority
CA
Canada
Prior art keywords
field effect
effect transistor
junction field
junction
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA175,331A
Other languages
English (en)
Other versions
CA175331S (en
Inventor
Michio Arai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP6607072A external-priority patent/JPS4924678A/ja
Priority claimed from JP570073A external-priority patent/JPS537279B2/ja
Application filed by Sony Corp filed Critical Sony Corp
Application granted granted Critical
Publication of CA972471A publication Critical patent/CA972471A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/112—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor
    • H01L31/1124—Devices with PN homojunction gate
    • H01L31/1126—Devices with PN homojunction gate the device being a field-effect phototransistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electromagnetism (AREA)
  • Ceramic Engineering (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Measurement Of Current Or Voltage (AREA)
CA175,331A 1972-06-30 1973-06-29 Junction field effect transistor Expired CA972471A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP6607072A JPS4924678A (de) 1972-06-30 1972-06-30
JP570073A JPS537279B2 (de) 1973-01-10 1973-01-10

Publications (1)

Publication Number Publication Date
CA972471A true CA972471A (en) 1975-08-05

Family

ID=26339685

Family Applications (1)

Application Number Title Priority Date Filing Date
CA175,331A Expired CA972471A (en) 1972-06-30 1973-06-29 Junction field effect transistor

Country Status (11)

Country Link
US (1) US3868718A (de)
AT (1) AT348589B (de)
AU (1) AU475901B2 (de)
BR (1) BR7304898D0 (de)
CA (1) CA972471A (de)
DK (1) DK139248B (de)
FR (1) FR2191275B1 (de)
GB (1) GB1434652A (de)
IT (1) IT990812B (de)
NL (1) NL7309215A (de)
SE (1) SE402674B (de)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5051658A (de) * 1973-09-07 1975-05-08
JPS5061194A (de) * 1973-09-27 1975-05-26
US4328511A (en) * 1979-12-10 1982-05-04 Texas Instruments Incorporated Taper isolated ram cell without gate oxide
US4492972A (en) * 1981-08-17 1985-01-08 Honeywell Inc. JFET Monolithic integrated circuit with input bias current temperature compensation
US4442445A (en) * 1981-11-23 1984-04-10 The United States Of America As Represented By The Secretary Of The Army Planar doped barrier gate field effect transistor
US6143582A (en) * 1990-12-31 2000-11-07 Kopin Corporation High density electronic circuit modules

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2778956A (en) * 1952-10-31 1957-01-22 Bell Telephone Labor Inc Semiconductor signal translating devices
US3325654A (en) * 1964-10-09 1967-06-13 Honeywell Inc Fet switching utilizing matching equivalent capacitive means
NL6503993A (de) * 1965-03-30 1966-10-03
US3366802A (en) * 1965-04-06 1968-01-30 Fairchild Camera Instr Co Field effect transistor photosensitive modulator
US3543052A (en) * 1967-06-05 1970-11-24 Bell Telephone Labor Inc Device employing igfet in combination with schottky diode
US3585462A (en) * 1968-11-13 1971-06-15 Sprague Electric Co Semiconductive magnetic transducer
US3770988A (en) * 1970-09-04 1973-11-06 Gen Electric Self-registered surface charge launch-receive device and method for making

Also Published As

Publication number Publication date
NL7309215A (de) 1974-01-02
DK139248B (da) 1979-01-15
IT990812B (it) 1975-07-10
GB1434652A (en) 1976-05-05
US3868718A (en) 1975-02-25
ATA571373A (de) 1978-07-15
AT348589B (de) 1979-02-26
AU475901B2 (en) 1976-09-09
SE402674B (sv) 1978-07-10
FR2191275A1 (de) 1974-02-01
AU5755573A (en) 1975-01-09
DK139248C (de) 1979-07-02
BR7304898D0 (pt) 1974-08-22
FR2191275B1 (de) 1977-08-05

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