CA972071A - Paired transistor arrangement - Google Patents

Paired transistor arrangement

Info

Publication number
CA972071A
CA972071A CA166,954A CA166954A CA972071A CA 972071 A CA972071 A CA 972071A CA 166954 A CA166954 A CA 166954A CA 972071 A CA972071 A CA 972071A
Authority
CA
Canada
Prior art keywords
transistor arrangement
paired transistor
paired
arrangement
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA166,954A
Other versions
CA166954S (en
Inventor
Gijun Idei
Takao Arakawa
Mitsuo Aihara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Application granted granted Critical
Publication of CA972071A publication Critical patent/CA972071A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
CA166,954A 1972-03-16 1973-03-15 Paired transistor arrangement Expired CA972071A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2697772A JPS53675B2 (en) 1972-03-16 1972-03-16

Publications (1)

Publication Number Publication Date
CA972071A true CA972071A (en) 1975-07-29

Family

ID=12208203

Family Applications (1)

Application Number Title Priority Date Filing Date
CA166,954A Expired CA972071A (en) 1972-03-16 1973-03-15 Paired transistor arrangement

Country Status (7)

Country Link
JP (1) JPS53675B2 (en)
AU (1) AU470370B2 (en)
CA (1) CA972071A (en)
DE (1) DE2313196A1 (en)
FR (1) FR2176129B3 (en)
GB (1) GB1421924A (en)
IT (1) IT979867B (en)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS586322B2 (en) * 1975-02-19 1983-02-04 株式会社日立製作所 Integrated circuit with thermal feedback in mind
JPS54107688A (en) * 1978-02-13 1979-08-23 Seiko Epson Corp Semiconductor integrated circuit for temperature detection
US4467227A (en) * 1981-10-29 1984-08-21 Hughes Aircraft Company Channel charge compensation switch with first order process independence
JPS5894232A (en) * 1981-11-30 1983-06-04 Toshiba Corp Semiconductor analog switch circuit
JPH0642537B2 (en) * 1985-11-15 1994-06-01 株式会社東芝 Semiconductor device
DE3818533C2 (en) * 1987-06-01 1994-05-26 Mitsubishi Electric Corp Field effect transistor
JP3516307B2 (en) * 1992-12-24 2004-04-05 ヒュンダイ エレクトロニクス アメリカ Differential analog transistor composed of digital transistors
US5610429A (en) * 1994-05-06 1997-03-11 At&T Global Information Solutions Company Differential analog transistors constructed from digital transistors
JP3523521B2 (en) 1998-04-09 2004-04-26 松下電器産業株式会社 MOS transistor versus device
JP2009188223A (en) * 2008-02-07 2009-08-20 Seiko Instruments Inc Semiconductor device
JP5945155B2 (en) 2012-05-07 2016-07-05 矢崎総業株式会社 Connection structure of external conductor terminal of electric wire
JP5863892B2 (en) * 2014-07-07 2016-02-17 ルネサスエレクトロニクス株式会社 Semiconductor device

Also Published As

Publication number Publication date
IT979867B (en) 1974-09-30
JPS53675B2 (en) 1978-01-11
AU470370B2 (en) 1976-03-11
DE2313196A1 (en) 1973-10-04
JPS4895194A (en) 1973-12-06
AU5334173A (en) 1974-09-19
FR2176129B3 (en) 1976-03-12
GB1421924A (en) 1976-01-21
FR2176129A1 (en) 1973-10-26

Similar Documents

Publication Publication Date Title
AU462348B2 (en) Saf-t-jet
AU467469B2 (en) Trifluoromethylmercaptoacetamindocephalosphorins
AU454372B2 (en) Childsafe actuator-overcap
AU469305B2 (en) Deipenylyl-alkanoylaminopyridine
CA972071A (en) Paired transistor arrangement
AU470175B2 (en) Mesa transistors
AU475339B2 (en) S-substituted-2-thiodenosines
AU475748B2 (en) Napnthopyrans
AU470359B2 (en) Sulphamoylphenyl-imidazolidinones
AU468159B2 (en) 5-aroyl-furans
AU466344B2 (en) Cycloalkyllactamimides
AU471369B2 (en) Diphenylmethoxyethylamines
AU473297B2 (en) Indolylimidoylheterocyclics
AU468236B2 (en) 2-acyl-5-nitrothiazoles
AU468599B2 (en) 15-oxasteroids
AU467526B2 (en) Pyronorifamycins
CA964696A (en) Gate
CA913805A (en) Transistor
AU472554B2 (en) Isothocyanobenzoxazoles
CA911068A (en) Pnp-silicon transistors
CA897324A (en) Transistors
CA909397A (en) Field-effect transistors
CA893320A (en) Transistor amplifier
AU436749B2 (en) Transistor amplifier
CA904193A (en) Type-printing mechanisms