GB1421924A - Paired transistor arrangement - Google Patents

Paired transistor arrangement

Info

Publication number
GB1421924A
GB1421924A GB1279773A GB1279773A GB1421924A GB 1421924 A GB1421924 A GB 1421924A GB 1279773 A GB1279773 A GB 1279773A GB 1279773 A GB1279773 A GB 1279773A GB 1421924 A GB1421924 A GB 1421924A
Authority
GB
United Kingdom
Prior art keywords
transistors
sections
corners
group
march
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB1279773A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Publication of GB1421924A publication Critical patent/GB1421924A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate

Abstract

1421924 Integrated differential amplifiers TOKYO SHIBAURA ELECTRIC CO Ltd 16 March 1973 [16 March 1972] 12797/73 Heading H1K [Also in Division H3] In a monolithic differential amplifier comprising two similar half sections each consisting of a parallel connected group of field effect transistors, in which the sources of the transistors in both sections are connected by way of a common resistor to one terminal of a direct voltage supply, the drains of the transistors in the two half sections connected via respective load resistors to the other terminal of the supply, and the gates of the transistors in the two half sections connected to respective input terminals, the transistors, each having discrete electrodes, form a rectangular array in a semi-conductor wafer and each group comprises one or more pairs disposed at diagonally opposed corners of a rectangle defined in the array. In the arrangements described with reference to Figs. 3A, 12 and 13 (not shown) using JUG or IGFETS each such pair in one group of transistors is balanced by a pair lying at the other corners of the same rectangle, but in the Fig. 11 arrangement the transistors in the two groups lie at the corners of different rectangles. The arrangements are said to give better matching of the circuit half-sections than is achieved using row or column-adjacent pairs of transistors.
GB1279773A 1972-03-16 1973-03-16 Paired transistor arrangement Expired GB1421924A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2697772A JPS53675B2 (en) 1972-03-16 1972-03-16

Publications (1)

Publication Number Publication Date
GB1421924A true GB1421924A (en) 1976-01-21

Family

ID=12208203

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1279773A Expired GB1421924A (en) 1972-03-16 1973-03-16 Paired transistor arrangement

Country Status (7)

Country Link
JP (1) JPS53675B2 (en)
AU (1) AU470370B2 (en)
CA (1) CA972071A (en)
DE (1) DE2313196A1 (en)
FR (1) FR2176129B3 (en)
GB (1) GB1421924A (en)
IT (1) IT979867B (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5175604A (en) * 1985-11-15 1992-12-29 Kabushiki Kaisha Toshiba Field-effect transistor device
US5488249A (en) * 1992-12-24 1996-01-30 At&T Global Information Solutions Company Differential analog transistors constructed from digital transistors
US5610429A (en) * 1994-05-06 1997-03-11 At&T Global Information Solutions Company Differential analog transistors constructed from digital transistors

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS586322B2 (en) * 1975-02-19 1983-02-04 株式会社日立製作所 Integrated circuit with thermal feedback in mind
JPS54107688A (en) * 1978-02-13 1979-08-23 Seiko Epson Corp Semiconductor integrated circuit for temperature detection
US4467227A (en) * 1981-10-29 1984-08-21 Hughes Aircraft Company Channel charge compensation switch with first order process independence
JPS5894232A (en) * 1981-11-30 1983-06-04 Toshiba Corp Semiconductor analog switch circuit
DE3818533C2 (en) * 1987-06-01 1994-05-26 Mitsubishi Electric Corp Field effect transistor
JP3523521B2 (en) 1998-04-09 2004-04-26 松下電器産業株式会社 MOS transistor versus device
JP2009188223A (en) * 2008-02-07 2009-08-20 Seiko Instruments Inc Semiconductor device
JP5945155B2 (en) 2012-05-07 2016-07-05 矢崎総業株式会社 Connection structure of external conductor terminal of electric wire
JP5863892B2 (en) * 2014-07-07 2016-02-17 ルネサスエレクトロニクス株式会社 Semiconductor device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5175604A (en) * 1985-11-15 1992-12-29 Kabushiki Kaisha Toshiba Field-effect transistor device
US5488249A (en) * 1992-12-24 1996-01-30 At&T Global Information Solutions Company Differential analog transistors constructed from digital transistors
US5610429A (en) * 1994-05-06 1997-03-11 At&T Global Information Solutions Company Differential analog transistors constructed from digital transistors

Also Published As

Publication number Publication date
IT979867B (en) 1974-09-30
CA972071A (en) 1975-07-29
JPS53675B2 (en) 1978-01-11
AU470370B2 (en) 1976-03-11
DE2313196A1 (en) 1973-10-04
JPS4895194A (en) 1973-12-06
AU5334173A (en) 1974-09-19
FR2176129B3 (en) 1976-03-12
FR2176129A1 (en) 1973-10-26

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Legal Events

Date Code Title Description
PS Patent sealed
746 Register noted 'licences of right' (sect. 46/1977)
PE20 Patent expired after termination of 20 years

Effective date: 19930315