JPS4895194A - - Google Patents

Info

Publication number
JPS4895194A
JPS4895194A JP47026977A JP2697772A JPS4895194A JP S4895194 A JPS4895194 A JP S4895194A JP 47026977 A JP47026977 A JP 47026977A JP 2697772 A JP2697772 A JP 2697772A JP S4895194 A JPS4895194 A JP S4895194A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP47026977A
Other languages
Japanese (ja)
Other versions
JPS53675B2 (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP2697772A priority Critical patent/JPS53675B2/ja
Priority to FR7309395A priority patent/FR2176129B3/fr
Priority to AU53341/73A priority patent/AU470370B2/en
Priority to IT4883573A priority patent/IT979867B/en
Priority to CA166,954A priority patent/CA972071A/en
Priority to GB1279773A priority patent/GB1421924A/en
Priority to DE19732313196 priority patent/DE2313196A1/en
Publication of JPS4895194A publication Critical patent/JPS4895194A/ja
Publication of JPS53675B2 publication Critical patent/JPS53675B2/ja
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/08Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
JP2697772A 1972-03-16 1972-03-16 Expired JPS53675B2 (en)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2697772A JPS53675B2 (en) 1972-03-16 1972-03-16
FR7309395A FR2176129B3 (en) 1972-03-16 1973-03-15
AU53341/73A AU470370B2 (en) 1972-03-16 1973-03-15 A paired transistor arrangement
IT4883573A IT979867B (en) 1972-03-16 1973-03-15 DISTRIBUTION OF TRANSISTORS IN PAIRS FOR CORRESPONDING HALF SECTIONS OF CIRCUIT WITH SUBSTANTIALLY THE SAME CHARACTERISTICS
CA166,954A CA972071A (en) 1972-03-16 1973-03-15 Paired transistor arrangement
GB1279773A GB1421924A (en) 1972-03-16 1973-03-16 Paired transistor arrangement
DE19732313196 DE2313196A1 (en) 1972-03-16 1973-03-16 TRANSISTOR PAIR ARRANGEMENT

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2697772A JPS53675B2 (en) 1972-03-16 1972-03-16

Publications (2)

Publication Number Publication Date
JPS4895194A true JPS4895194A (en) 1973-12-06
JPS53675B2 JPS53675B2 (en) 1978-01-11

Family

ID=12208203

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2697772A Expired JPS53675B2 (en) 1972-03-16 1972-03-16

Country Status (7)

Country Link
JP (1) JPS53675B2 (en)
AU (1) AU470370B2 (en)
CA (1) CA972071A (en)
DE (1) DE2313196A1 (en)
FR (1) FR2176129B3 (en)
GB (1) GB1421924A (en)
IT (1) IT979867B (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5194745A (en) * 1975-02-19 1976-08-19
JPS54107688A (en) * 1978-02-13 1979-08-23 Seiko Epson Corp Semiconductor integrated circuit for temperature detection
US6552402B1 (en) 1998-04-09 2003-04-22 Matsushita Electric Industrial Co., Ltd. Composite MOS transistor device
JP2009188223A (en) * 2008-02-07 2009-08-20 Seiko Instruments Inc Semiconductor device
JP2014209658A (en) * 2014-07-07 2014-11-06 ルネサスエレクトロニクス株式会社 Semiconductor device
US9660355B2 (en) 2012-05-07 2017-05-23 Yazaki Corporation Connection structure of external conductor terminal of electric cable

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4467227A (en) * 1981-10-29 1984-08-21 Hughes Aircraft Company Channel charge compensation switch with first order process independence
JPS5894232A (en) * 1981-11-30 1983-06-04 Toshiba Corp Semiconductor analog switch circuit
JPH0642537B2 (en) * 1985-11-15 1994-06-01 株式会社東芝 Semiconductor device
DE3818533C2 (en) * 1987-06-01 1994-05-26 Mitsubishi Electric Corp Field effect transistor
JP3516307B2 (en) * 1992-12-24 2004-04-05 ヒュンダイ エレクトロニクス アメリカ Differential analog transistor composed of digital transistors
US5610429A (en) * 1994-05-06 1997-03-11 At&T Global Information Solutions Company Differential analog transistors constructed from digital transistors

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
APPLICATION BRIEF=1969US *
IEEE JOURNAL OF SOLID-STATE CIRCUITS=1970US *

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5194745A (en) * 1975-02-19 1976-08-19
JPS586322B2 (en) * 1975-02-19 1983-02-04 株式会社日立製作所 Integrated circuit with thermal feedback in mind
JPS54107688A (en) * 1978-02-13 1979-08-23 Seiko Epson Corp Semiconductor integrated circuit for temperature detection
JPS6326547B2 (en) * 1978-02-13 1988-05-30 Seiko Epson Corp
US6552402B1 (en) 1998-04-09 2003-04-22 Matsushita Electric Industrial Co., Ltd. Composite MOS transistor device
JP2009188223A (en) * 2008-02-07 2009-08-20 Seiko Instruments Inc Semiconductor device
US9660355B2 (en) 2012-05-07 2017-05-23 Yazaki Corporation Connection structure of external conductor terminal of electric cable
JP2014209658A (en) * 2014-07-07 2014-11-06 ルネサスエレクトロニクス株式会社 Semiconductor device

Also Published As

Publication number Publication date
FR2176129B3 (en) 1976-03-12
DE2313196A1 (en) 1973-10-04
AU470370B2 (en) 1976-03-11
JPS53675B2 (en) 1978-01-11
IT979867B (en) 1974-09-30
CA972071A (en) 1975-07-29
AU5334173A (en) 1974-09-19
FR2176129A1 (en) 1973-10-26
GB1421924A (en) 1976-01-21

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