FR2176129B3 - - Google Patents

Info

Publication number
FR2176129B3
FR2176129B3 FR7309395A FR7309395A FR2176129B3 FR 2176129 B3 FR2176129 B3 FR 2176129B3 FR 7309395 A FR7309395 A FR 7309395A FR 7309395 A FR7309395 A FR 7309395A FR 2176129 B3 FR2176129 B3 FR 2176129B3
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR7309395A
Other versions
FR2176129A1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Publication of FR2176129A1 publication Critical patent/FR2176129A1/fr
Application granted granted Critical
Publication of FR2176129B3 publication Critical patent/FR2176129B3/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
FR7309395A 1972-03-16 1973-03-15 Expired FR2176129B3 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2697772A JPS53675B2 (fr) 1972-03-16 1972-03-16

Publications (2)

Publication Number Publication Date
FR2176129A1 FR2176129A1 (fr) 1973-10-26
FR2176129B3 true FR2176129B3 (fr) 1976-03-12

Family

ID=12208203

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7309395A Expired FR2176129B3 (fr) 1972-03-16 1973-03-15

Country Status (7)

Country Link
JP (1) JPS53675B2 (fr)
AU (1) AU470370B2 (fr)
CA (1) CA972071A (fr)
DE (1) DE2313196A1 (fr)
FR (1) FR2176129B3 (fr)
GB (1) GB1421924A (fr)
IT (1) IT979867B (fr)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS586322B2 (ja) * 1975-02-19 1983-02-04 株式会社日立製作所 熱帰還を考慮した集積回路
JPS54107688A (en) * 1978-02-13 1979-08-23 Seiko Epson Corp Semiconductor integrated circuit for temperature detection
US4467227A (en) * 1981-10-29 1984-08-21 Hughes Aircraft Company Channel charge compensation switch with first order process independence
JPS5894232A (ja) * 1981-11-30 1983-06-04 Toshiba Corp 半導体アナログスイッチ回路
JPH0642537B2 (ja) * 1985-11-15 1994-06-01 株式会社東芝 半導体装置
DE3818533C2 (de) * 1987-06-01 1994-05-26 Mitsubishi Electric Corp Feldeffekttransistor
JP3516307B2 (ja) * 1992-12-24 2004-04-05 ヒュンダイ エレクトロニクス アメリカ デジタルトランジスタで構成される差動アナログトランジスタ
US5610429A (en) * 1994-05-06 1997-03-11 At&T Global Information Solutions Company Differential analog transistors constructed from digital transistors
JP3523521B2 (ja) 1998-04-09 2004-04-26 松下電器産業株式会社 Ｍｏｓトランジスタ対装置
JP2009188223A (ja) * 2008-02-07 2009-08-20 Seiko Instruments Inc 半導体装置
JP5945155B2 (ja) 2012-05-07 2016-07-05 矢崎総業株式会社 電線の外部導体端子の接続構造
JP5863892B2 (ja) * 2014-07-07 2016-02-17 ルネサスエレクトロニクス株式会社 半導体装置

Also Published As

Publication number Publication date
IT979867B (it) 1974-09-30
CA972071A (en) 1975-07-29
JPS53675B2 (fr) 1978-01-11
AU470370B2 (en) 1976-03-11
DE2313196A1 (de) 1973-10-04
JPS4895194A (fr) 1973-12-06
AU5334173A (en) 1974-09-19
GB1421924A (en) 1976-01-21
FR2176129A1 (fr) 1973-10-26

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