IT979867B - Distribuzione di transistor in coppia per corrispondenti semi sezioni di circuito a caratteristiche sostanzialmente uguali - Google Patents

Distribuzione di transistor in coppia per corrispondenti semi sezioni di circuito a caratteristiche sostanzialmente uguali

Info

Publication number
IT979867B
IT979867B IT4883573A IT4883573A IT979867B IT 979867 B IT979867 B IT 979867B IT 4883573 A IT4883573 A IT 4883573A IT 4883573 A IT4883573 A IT 4883573A IT 979867 B IT979867 B IT 979867B
Authority
IT
Italy
Prior art keywords
transistors
pairs
distribution
circuit
same characteristics
Prior art date
Application number
IT4883573A
Other languages
English (en)
Italian (it)
Original Assignee
Tokyo Shibaura Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co filed Critical Tokyo Shibaura Electric Co
Application granted granted Critical
Publication of IT979867B publication Critical patent/IT979867B/it

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
  • Amplifiers (AREA)
IT4883573A 1972-03-16 1973-03-15 Distribuzione di transistor in coppia per corrispondenti semi sezioni di circuito a caratteristiche sostanzialmente uguali IT979867B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2697772A JPS53675B2 (fr) 1972-03-16 1972-03-16

Publications (1)

Publication Number Publication Date
IT979867B true IT979867B (it) 1974-09-30

Family

ID=12208203

Family Applications (1)

Application Number Title Priority Date Filing Date
IT4883573A IT979867B (it) 1972-03-16 1973-03-15 Distribuzione di transistor in coppia per corrispondenti semi sezioni di circuito a caratteristiche sostanzialmente uguali

Country Status (7)

Country Link
JP (1) JPS53675B2 (fr)
AU (1) AU470370B2 (fr)
CA (1) CA972071A (fr)
DE (1) DE2313196A1 (fr)
FR (1) FR2176129B3 (fr)
GB (1) GB1421924A (fr)
IT (1) IT979867B (fr)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS586322B2 (ja) * 1975-02-19 1983-02-04 株式会社日立製作所 熱帰還を考慮した集積回路
JPS54107688A (en) * 1978-02-13 1979-08-23 Seiko Epson Corp Semiconductor integrated circuit for temperature detection
US4467227A (en) * 1981-10-29 1984-08-21 Hughes Aircraft Company Channel charge compensation switch with first order process independence
JPS5894232A (ja) * 1981-11-30 1983-06-04 Toshiba Corp 半導体アナログスイッチ回路
JPH0642537B2 (ja) * 1985-11-15 1994-06-01 株式会社東芝 半導体装置
DE3818533C2 (de) * 1987-06-01 1994-05-26 Mitsubishi Electric Corp Feldeffekttransistor
JP3516307B2 (ja) * 1992-12-24 2004-04-05 ヒュンダイ エレクトロニクス アメリカ デジタルトランジスタで構成される差動アナログトランジスタ
US5610429A (en) * 1994-05-06 1997-03-11 At&T Global Information Solutions Company Differential analog transistors constructed from digital transistors
JP3523521B2 (ja) 1998-04-09 2004-04-26 松下電器産業株式会社 Ｍｏｓトランジスタ対装置
JP2009188223A (ja) * 2008-02-07 2009-08-20 Seiko Instruments Inc 半導体装置
JP5945155B2 (ja) 2012-05-07 2016-07-05 矢崎総業株式会社 電線の外部導体端子の接続構造
JP5863892B2 (ja) * 2014-07-07 2016-02-17 ルネサスエレクトロニクス株式会社 半導体装置

Also Published As

Publication number Publication date
AU470370B2 (en) 1976-03-11
FR2176129B3 (fr) 1976-03-12
GB1421924A (en) 1976-01-21
CA972071A (en) 1975-07-29
JPS53675B2 (fr) 1978-01-11
DE2313196A1 (de) 1973-10-04
JPS4895194A (fr) 1973-12-06
AU5334173A (en) 1974-09-19
FR2176129A1 (fr) 1973-10-26

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