JPS54107688A - Semiconductor integrated circuit for temperature detection - Google Patents

Semiconductor integrated circuit for temperature detection

Info

Publication number
JPS54107688A
JPS54107688A JP1519178A JP1519178A JPS54107688A JP S54107688 A JPS54107688 A JP S54107688A JP 1519178 A JP1519178 A JP 1519178A JP 1519178 A JP1519178 A JP 1519178A JP S54107688 A JPS54107688 A JP S54107688A
Authority
JP
Japan
Prior art keywords
circuit
temperature
reference voltage
temperature detection
constituted
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1519178A
Other languages
Japanese (ja)
Other versions
JPS6326547B2 (en
Inventor
Shinji Morozumi
Tatsuji Asakawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Suwa Seikosha KK
Original Assignee
Seiko Epson Corp
Suwa Seikosha KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp, Suwa Seikosha KK filed Critical Seiko Epson Corp
Priority to JP1519178A priority Critical patent/JPS54107688A/en
Publication of JPS54107688A publication Critical patent/JPS54107688A/en
Publication of JPS6326547B2 publication Critical patent/JPS6326547B2/ja
Granted legal-status Critical Current

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  • Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To establish the element for temperature detection and for switching with low cost, by forming the temperature sensing element and the temperature detection circuit on one semiconductor substrate. CONSTITUTION:The circuit is constituted with the reference voltage generating circuit 7 flat in the temperature characteristics, reference voltage generating circuit 8 having temperature characteristics, differential amplifiers 9 and 10, and output buffer 11, and these are formed on one Si substrate. The circuit 7 is constituted with the P channel FET 12 and 14 and N channel FET 13 and 15. In this case, 13 and 15 are located near each other so that the threshold value can be regarded as the same, and the threshold value of 14 is formed lower than that of 12. Further, the conductance coefficient is kept equal in this pair and the reference voltage is made flat independent of temperature. Further, the circuit 8 is constituted with FET 16 to 19 as the circuit 7, but the ratio of the conductance coefficient of pair transistor is changed, producing the reference voltage having temperature dependancy. Thus, the reliability can be increased by using cancellation system.
JP1519178A 1978-02-13 1978-02-13 Semiconductor integrated circuit for temperature detection Granted JPS54107688A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1519178A JPS54107688A (en) 1978-02-13 1978-02-13 Semiconductor integrated circuit for temperature detection

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1519178A JPS54107688A (en) 1978-02-13 1978-02-13 Semiconductor integrated circuit for temperature detection

Publications (2)

Publication Number Publication Date
JPS54107688A true JPS54107688A (en) 1979-08-23
JPS6326547B2 JPS6326547B2 (en) 1988-05-30

Family

ID=11881948

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1519178A Granted JPS54107688A (en) 1978-02-13 1978-02-13 Semiconductor integrated circuit for temperature detection

Country Status (1)

Country Link
JP (1) JPS54107688A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6350053A (en) * 1986-08-18 1988-03-02 シリコニツクス リミテイド Temperature detector
US7400208B2 (en) 2005-07-15 2008-07-15 Ricoh Company, Ltd. Temperature detector circuit and oscillation frequency compensation device using the same

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4895194A (en) * 1972-03-16 1973-12-06

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4895194A (en) * 1972-03-16 1973-12-06

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6350053A (en) * 1986-08-18 1988-03-02 シリコニツクス リミテイド Temperature detector
US7400208B2 (en) 2005-07-15 2008-07-15 Ricoh Company, Ltd. Temperature detector circuit and oscillation frequency compensation device using the same
US7741925B2 (en) 2005-07-15 2010-06-22 Ricoh Company, Ltd. Temperature detector circuit and oscillation frequency compensation device using the same

Also Published As

Publication number Publication date
JPS6326547B2 (en) 1988-05-30

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