JPS5382185A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5382185A
JPS5382185A JP15886276A JP15886276A JPS5382185A JP S5382185 A JPS5382185 A JP S5382185A JP 15886276 A JP15886276 A JP 15886276A JP 15886276 A JP15886276 A JP 15886276A JP S5382185 A JPS5382185 A JP S5382185A
Authority
JP
Japan
Prior art keywords
semiconductor device
substrate
type layer
type
lateral
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15886276A
Other languages
Japanese (ja)
Inventor
Tsutomu Matsuura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP15886276A priority Critical patent/JPS5382185A/en
Publication of JPS5382185A publication Critical patent/JPS5382185A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
    • H01L27/0229—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of bipolar structures
    • H01L27/0233—Integrated injection logic structures [I2L]

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)

Abstract

PURPOSE:To obtain the I<2>L of high performance, by providing the P type layer bridged with the N type layer and the substrate on the N type substrate, and by separately controlling the current amplification degree of the lateral and the longitudinal transistor.
JP15886276A 1976-12-27 1976-12-27 Semiconductor device Pending JPS5382185A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15886276A JPS5382185A (en) 1976-12-27 1976-12-27 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15886276A JPS5382185A (en) 1976-12-27 1976-12-27 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5382185A true JPS5382185A (en) 1978-07-20

Family

ID=15681012

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15886276A Pending JPS5382185A (en) 1976-12-27 1976-12-27 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5382185A (en)

Similar Documents

Publication Publication Date Title
JPS51135373A (en) Semiconductor device
JPS52131449A (en) Semiconductor switch circuit
JPS5384570A (en) Field effect semiconductor device and its manufacture
JPS5360582A (en) Semiconductor ingegrated circuit device
JPS5244574A (en) Semiconductor device
JPS5382185A (en) Semiconductor device
JPS533075A (en) Production of mos structure field effect semiconductor device
JPS5434687A (en) Semiconductor device
JPS5346288A (en) Mis type semiconductor device
JPS5220769A (en) Longitudinal semi-conductor unit
JPS538072A (en) Semiconductor device
JPS5366384A (en) Thyristor
JPS5378177A (en) Field effect transistor
JPS52100877A (en) Field effect transistor of junction type
JPS53108394A (en) Semiconductor intergrated circuit device
JPS545392A (en) Semiconductor integrated circuit and its manufacture
JPS548476A (en) Semiconductor device
JPS5384690A (en) Field effect transistor
JPS52146186A (en) Semiconductor device
JPS526036A (en) Semiconductor memory circuit
JPS5329082A (en) Semiconductor device
JPS5382184A (en) Semiconductor device
JPS52100878A (en) Field effect transistor
JPS5373980A (en) Semiconductor device and its manufacture
JPS5339086A (en) Semiconductor device