JPS52128076A - Manufacture of field effect transistor - Google Patents
Manufacture of field effect transistorInfo
- Publication number
- JPS52128076A JPS52128076A JP4509776A JP4509776A JPS52128076A JP S52128076 A JPS52128076 A JP S52128076A JP 4509776 A JP4509776 A JP 4509776A JP 4509776 A JP4509776 A JP 4509776A JP S52128076 A JPS52128076 A JP S52128076A
- Authority
- JP
- Japan
- Prior art keywords
- manufacture
- field effect
- effect transistor
- gate
- fet
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE:To decrease both the gate parasitic capacity and the wiring resistance in order to obtain an FET of good high frequency property with increased gm, by having short and accurate control of the gate length depending on the etching depth.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4509776A JPS52128076A (en) | 1976-04-20 | 1976-04-20 | Manufacture of field effect transistor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4509776A JPS52128076A (en) | 1976-04-20 | 1976-04-20 | Manufacture of field effect transistor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS52128076A true JPS52128076A (en) | 1977-10-27 |
Family
ID=12709789
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP4509776A Pending JPS52128076A (en) | 1976-04-20 | 1976-04-20 | Manufacture of field effect transistor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS52128076A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5666076A (en) * | 1979-11-02 | 1981-06-04 | Tohoku Metal Ind Ltd | Semiconductor device |
JPS6292480A (en) * | 1985-10-18 | 1987-04-27 | Sanyo Electric Co Ltd | Manufacture of compound semiconductor device |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5113581A (en) * | 1974-07-24 | 1976-02-03 | Hitachi Ltd | DENKAIKOKATORANJISUTAOYOBISONO SEIHO |
-
1976
- 1976-04-20 JP JP4509776A patent/JPS52128076A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5113581A (en) * | 1974-07-24 | 1976-02-03 | Hitachi Ltd | DENKAIKOKATORANJISUTAOYOBISONO SEIHO |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5666076A (en) * | 1979-11-02 | 1981-06-04 | Tohoku Metal Ind Ltd | Semiconductor device |
JPS6292480A (en) * | 1985-10-18 | 1987-04-27 | Sanyo Electric Co Ltd | Manufacture of compound semiconductor device |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
LAPS | Cancellation because of no payment of annual fees |