IT979867B - DISTRIBUTION OF TRANSISTORS IN PAIRS FOR CORRESPONDING HALF SECTIONS OF CIRCUIT WITH SUBSTANTIALLY THE SAME CHARACTERISTICS - Google Patents

DISTRIBUTION OF TRANSISTORS IN PAIRS FOR CORRESPONDING HALF SECTIONS OF CIRCUIT WITH SUBSTANTIALLY THE SAME CHARACTERISTICS

Info

Publication number
IT979867B
IT979867B IT4883573A IT4883573A IT979867B IT 979867 B IT979867 B IT 979867B IT 4883573 A IT4883573 A IT 4883573A IT 4883573 A IT4883573 A IT 4883573A IT 979867 B IT979867 B IT 979867B
Authority
IT
Italy
Prior art keywords
transistors
pairs
distribution
circuit
same characteristics
Prior art date
Application number
IT4883573A
Other languages
Italian (it)
Original Assignee
Tokyo Shibaura Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co filed Critical Tokyo Shibaura Electric Co
Application granted granted Critical
Publication of IT979867B publication Critical patent/IT979867B/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
IT4883573A 1972-03-16 1973-03-15 DISTRIBUTION OF TRANSISTORS IN PAIRS FOR CORRESPONDING HALF SECTIONS OF CIRCUIT WITH SUBSTANTIALLY THE SAME CHARACTERISTICS IT979867B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2697772A JPS53675B2 (en) 1972-03-16 1972-03-16

Publications (1)

Publication Number Publication Date
IT979867B true IT979867B (en) 1974-09-30

Family

ID=12208203

Family Applications (1)

Application Number Title Priority Date Filing Date
IT4883573A IT979867B (en) 1972-03-16 1973-03-15 DISTRIBUTION OF TRANSISTORS IN PAIRS FOR CORRESPONDING HALF SECTIONS OF CIRCUIT WITH SUBSTANTIALLY THE SAME CHARACTERISTICS

Country Status (7)

Country Link
JP (1) JPS53675B2 (en)
AU (1) AU470370B2 (en)
CA (1) CA972071A (en)
DE (1) DE2313196A1 (en)
FR (1) FR2176129B3 (en)
GB (1) GB1421924A (en)
IT (1) IT979867B (en)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS586322B2 (en) * 1975-02-19 1983-02-04 株式会社日立製作所 Integrated circuit with thermal feedback in mind
JPS54107688A (en) * 1978-02-13 1979-08-23 Seiko Epson Corp Semiconductor integrated circuit for temperature detection
US4467227A (en) * 1981-10-29 1984-08-21 Hughes Aircraft Company Channel charge compensation switch with first order process independence
JPS5894232A (en) * 1981-11-30 1983-06-04 Toshiba Corp Semiconductor analog switch circuit
JPH0642537B2 (en) * 1985-11-15 1994-06-01 株式会社東芝 Semiconductor device
DE3818533C2 (en) * 1987-06-01 1994-05-26 Mitsubishi Electric Corp Field effect transistor
JP3516307B2 (en) * 1992-12-24 2004-04-05 ヒュンダイ エレクトロニクス アメリカ Differential analog transistor composed of digital transistors
US5610429A (en) * 1994-05-06 1997-03-11 At&T Global Information Solutions Company Differential analog transistors constructed from digital transistors
JP3523521B2 (en) 1998-04-09 2004-04-26 松下電器産業株式会社 MOS transistor versus device
JP2009188223A (en) * 2008-02-07 2009-08-20 Seiko Instruments Inc Semiconductor device
JP5945155B2 (en) 2012-05-07 2016-07-05 矢崎総業株式会社 Connection structure of external conductor terminal of electric wire
JP5863892B2 (en) * 2014-07-07 2016-02-17 ルネサスエレクトロニクス株式会社 Semiconductor device

Also Published As

Publication number Publication date
AU470370B2 (en) 1976-03-11
GB1421924A (en) 1976-01-21
JPS4895194A (en) 1973-12-06
CA972071A (en) 1975-07-29
DE2313196A1 (en) 1973-10-04
FR2176129A1 (en) 1973-10-26
AU5334173A (en) 1974-09-19
JPS53675B2 (en) 1978-01-11
FR2176129B3 (en) 1976-03-12

Similar Documents

Publication Publication Date Title
NL170349C (en) SEMICONDUCTOR DEVICE WITH COMPLEMENTARY FIELD EFFECT TRANSISTORS.
IT975001B (en) CIRCUITAL MODULE INCLUDING A FIELD EFFECT TRANSISTOR AND A BIPOLAR TRANSISTOR
NL7513422A (en) TRANSISTOR AMPLIFIER WITH FIELD EFFECT TRANSISTORS.
IT962927B (en) FIELD EFFECT TRANSISTOR
SE390241B (en) TRANSISTOR AMPLIFIER CIRCUIT
IT979867B (en) DISTRIBUTION OF TRANSISTORS IN PAIRS FOR CORRESPONDING HALF SECTIONS OF CIRCUIT WITH SUBSTANTIALLY THE SAME CHARACTERISTICS
DE2255171B2 (en) INSULATING FIELD EFFECT TRANSISTOR
BE824510A (en) COMBINED TRANSISTOR CIRCUIT
BE809922A (en) MOSFET TRANSISTOR DYNAMIC CIRCUIT
BE772314A (en) TRANSISTOR BASE MANUFACTURING PROCESS
IT990205B (en) TRANSISTOR CIRCUIT
AT312069B (en) Circuit arrangement with two transistors
IT950006B (en) RADIOFRE QUENZA POWER TRANSISTOR
IT953974B (en) FIELD EFFECT TRANSISTOR AND PROCEDURE FOR MANUFACTURING FIELD EFFECT TRANSISTORS
IT1009962B (en) TRANSISTOR LOGIC CIRCUIT MODIFIED TRANSISTOR
AT348589B (en) FIELD EFFECT TRANSISTOR
ATA629275A (en) MEMORY FIELD EFFECT TRANSISTOR
BE755991A (en) TRANSISTOR CIRCUIT WITH IMPROVED CHARACTERISTIC CURVE
AT320741B (en) Semiconductor component with field effect transistor
IT1007011B (en) INTEGRATED CIRCUIT WITH FIELD EFFECT TRANSISTORS
BE791687A (en) TRANSISTOR AMPLIFIER CIRCUIT
AR192212A1 (en) A TRANSISTOR CIRCUIT
CH515583A (en) Integrated memory element with field effect transistors
FR1453559A (en) Advanced transistor circuit
NL165334C (en) FIELD EFFECT TRANSISTOR.