NL165334C - FIELD EFFECT TRANSISTOR. - Google Patents

FIELD EFFECT TRANSISTOR.

Info

Publication number
NL165334C
NL165334C NL7217558A NL7217558A NL165334C NL 165334 C NL165334 C NL 165334C NL 7217558 A NL7217558 A NL 7217558A NL 7217558 A NL7217558 A NL 7217558A NL 165334 C NL165334 C NL 165334C
Authority
NL
Netherlands
Prior art keywords
field effect
effect transistor
transistor
field
effect
Prior art date
Application number
NL7217558A
Other languages
Dutch (nl)
Other versions
NL7217558A (en
NL165334B (en
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP47003545A external-priority patent/JPS528075B2/ja
Priority claimed from JP2091572A external-priority patent/JPS5221870B2/ja
Priority claimed from JP47022535A external-priority patent/JPS5134267B2/ja
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Publication of NL7217558A publication Critical patent/NL7217558A/xx
Publication of NL165334B publication Critical patent/NL165334B/en
Application granted granted Critical
Publication of NL165334C publication Critical patent/NL165334C/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
    • H01L29/812—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a Schottky gate
NL7217558A 1971-12-27 1972-12-22 FIELD EFFECT TRANSISTOR. NL165334C (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP47003545A JPS528075B2 (en) 1971-12-27 1971-12-27
JP2091572A JPS5221870B2 (en) 1972-02-28 1972-02-28
JP47022535A JPS5134267B2 (en) 1972-03-04 1972-03-04

Publications (3)

Publication Number Publication Date
NL7217558A NL7217558A (en) 1973-06-29
NL165334B NL165334B (en) 1980-10-15
NL165334C true NL165334C (en) 1981-03-16

Family

ID=27275879

Family Applications (1)

Application Number Title Priority Date Filing Date
NL7217558A NL165334C (en) 1971-12-27 1972-12-22 FIELD EFFECT TRANSISTOR.

Country Status (2)

Country Link
DE (1) DE2263091C2 (en)
NL (1) NL165334C (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3040873C2 (en) * 1980-10-30 1984-02-23 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Field effect transistor
US5689129A (en) * 1995-06-07 1997-11-18 Harris Corporation High efficiency power MOS switch
CN103094333B (en) * 2011-11-03 2015-09-16 杭州汉安半导体有限公司 A kind of high-power thyristor

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1080696B (en) * 1956-12-10 1960-04-28 Stanislas Teszner Transistor, in particular unipolar transistor, with a flat semiconductor body and semiconducting, cylindrical teeth on its surface and method for its manufacture
FR1317256A (en) * 1961-12-16 1963-02-08 Teszner Stanislas Improvements to semiconductor devices known as multibrand tecnetrons
CH455055A (en) * 1967-03-15 1968-04-30 Ibm Semiconductor arrangement comprising a substrate, a mask containing openings and a monocrystalline semiconductor layer connected to the substrate through the openings
US3497777A (en) * 1967-06-13 1970-02-24 Stanislas Teszner Multichannel field-effect semi-conductor device

Also Published As

Publication number Publication date
DE2263091A1 (en) 1973-07-12
NL7217558A (en) 1973-06-29
DE2263091C2 (en) 1983-01-27
NL165334B (en) 1980-10-15

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Legal Events

Date Code Title Description
V4 Lapsed because of reaching the maxim lifetime of a patent