AT303818B - Feldeffekttransistor - Google Patents

Feldeffekttransistor

Info

Publication number
AT303818B
AT303818B AT383169A AT383169A AT303818B AT 303818 B AT303818 B AT 303818B AT 383169 A AT383169 A AT 383169A AT 383169 A AT383169 A AT 383169A AT 303818 B AT303818 B AT 303818B
Authority
AT
Austria
Prior art keywords
field effect
effect transistor
transistor
field
effect
Prior art date
Application number
AT383169A
Other languages
English (en)
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from NLAANVRAGE6805705,A external-priority patent/NL174503C/xx
Application filed by Philips Nv filed Critical Philips Nv
Application granted granted Critical
Publication of AT303818B publication Critical patent/AT303818B/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/762—Charge transfer devices
    • H01L29/765—Charge-coupled devices
    • H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
    • H01L29/76866—Surface Channel CCD
    • H01L29/76883—Three-Phase CCD
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/18—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages
    • G11C19/182—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes
    • G11C19/184—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes with field-effect transistors, e.g. MOS-FET
    • G11C19/186—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes with field-effect transistors, e.g. MOS-FET using only one transistor per capacitor, e.g. bucket brigade shift register
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C27/00—Electric analogue stores, e.g. for storing instantaneous values
    • G11C27/04—Shift registers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/762—Charge transfer devices
    • H01L29/765—Charge-coupled devices
    • H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
    • H01L29/76833—Buried channel CCD

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Amplifiers (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
AT383169A 1968-04-23 1969-04-21 Feldeffekttransistor AT303818B (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
NLAANVRAGE6805705,A NL174503C (nl) 1968-04-23 1968-04-23 Inrichting voor het overhevelen van lading.
NL6904620.A NL164158C (nl) 1968-04-23 1969-03-25 Schakeling met een veldeffecttransistor met een geisoleerde stuurelektrode voorzien van een beveiligingsdiode.

Publications (1)

Publication Number Publication Date
AT303818B true AT303818B (de) 1972-12-11

Family

ID=26644317

Family Applications (1)

Application Number Title Priority Date Filing Date
AT383169A AT303818B (de) 1968-04-23 1969-04-21 Feldeffekttransistor

Country Status (11)

Country Link
US (1) US3624468A (de)
AT (1) AT303818B (de)
BE (1) BE731765A (de)
BR (1) BR6908290D0 (de)
CH (1) CH493941A (de)
DE (1) DE1919406C3 (de)
DK (1) DK119523B (de)
ES (1) ES366200A1 (de)
FR (1) FR2006741A1 (de)
GB (1) GB1260526A (de)
SE (1) SE355694B (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4395723A (en) * 1980-05-27 1983-07-26 Eliyahou Harari Floating substrate dynamic RAM cell with lower punch-through means
NL8303792A (nl) * 1983-11-03 1985-06-03 Cordis Europ Inrichting voorzien van een op een isfet gebaseerd meetcircuit; voor toepassing in het meetcircuit geschikte isfet en werkwijze ter vervaardiging van een in het meetcircuit toe te passen isfet.
JPS62171151A (ja) * 1986-01-22 1987-07-28 Mitsubishi Electric Corp 出力回路
US5529046A (en) * 1995-01-06 1996-06-25 Xerox Corporation High voltage ignition control apparatus for an internal combustion engine

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3264493A (en) * 1963-10-01 1966-08-02 Fairchild Camera Instr Co Semiconductor circuit module for a high-gain, high-input impedance amplifier
US3441748A (en) * 1965-03-22 1969-04-29 Rca Corp Bidirectional igfet with symmetrical linear resistance with specific substrate voltage control
FR1484322A (fr) * 1965-06-22 1967-06-09 Philips Nv Composant semi-conducteur complexe
US3764864A (en) * 1966-03-29 1973-10-09 Matsushita Electronics Corp Insulated-gate field-effect transistor with punch-through effect element
US3543052A (en) * 1967-06-05 1970-11-24 Bell Telephone Labor Inc Device employing igfet in combination with schottky diode
US3470390A (en) * 1968-02-02 1969-09-30 Westinghouse Electric Corp Integrated back-to-back diodes to prevent breakdown of mis gate dielectric

Also Published As

Publication number Publication date
FR2006741B1 (de) 1973-10-19
BE731765A (de) 1969-10-20
US3624468A (en) 1971-11-30
BR6908290D0 (pt) 1973-04-26
DE1919406C3 (de) 1981-11-05
ES366200A1 (es) 1971-03-16
FR2006741A1 (fr) 1970-01-02
CH493941A (de) 1970-07-15
DE1919406A1 (de) 1970-12-03
DE1919406B2 (de) 1980-09-11
DK119523B (da) 1971-01-18
GB1260526A (en) 1972-01-19
SE355694B (de) 1973-04-30

Similar Documents

Publication Publication Date Title
NL163676C (nl) Veldeffecttransistor.
BR6909966D0 (pt) Dispositivo
CH502697A (de) Transistor
AT278902B (de) Transistor
AT263079B (de) Feldeffekttransistor
DE1903342B2 (de) Halbleitervorrichtung
CH483248A (de) Auftragvorrichtung
BR6913139D0 (pt) Dispositivo traqueal
BR6912784D0 (pt) Transistor
CH492305A (de) Dünnschicht-Feldeffekttransistor
AT303818B (de) Feldeffekttransistor
CH489914A (de) Feldeffekttransistor
DE6602334U (de) Transistor
NL161621C (nl) Halfgeleiderinrichting met veldeffecttransistor.
CH505471A (de) Feldeffekttransistor
CH495632A (de) Feldeffekttransistor
CH466435A (de) Transistor
CH494474A (de) Feldeffekt-Transistor
CH506188A (de) Feldeffekt-Transistor
DE1816439B2 (de) Leistungstransistor
CH480734A (de) Transistor
CH460184A (de) Transistor
CH494495A (de) Transistoroszillator
FR1487974A (fr) Transistors
AT299310B (de) Transistor

Legal Events

Date Code Title Description
ELJ Ceased due to non-payment of the annual fee