CH493941A - Feldeffekttransistor - Google Patents

Feldeffekttransistor

Info

Publication number
CH493941A
CH493941A CH594169A CH594169A CH493941A CH 493941 A CH493941 A CH 493941A CH 594169 A CH594169 A CH 594169A CH 594169 A CH594169 A CH 594169A CH 493941 A CH493941 A CH 493941A
Authority
CH
Switzerland
Prior art keywords
field effect
effect transistor
transistor
field
effect
Prior art date
Application number
CH594169A
Other languages
English (en)
Inventor
Johan Sangster Frederi Leonard
Jan Nienhuis Rijkent
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from NLAANVRAGE6805705,A external-priority patent/NL174503C/xx
Application filed by Philips Nv filed Critical Philips Nv
Publication of CH493941A publication Critical patent/CH493941A/de

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/762Charge transfer devices
    • H01L29/765Charge-coupled devices
    • H01L29/768Charge-coupled devices with field effect produced by an insulated gate
    • H01L29/76866Surface Channel CCD
    • H01L29/76883Three-Phase CCD
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C19/00Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/18Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages
    • G11C19/182Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes
    • G11C19/184Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes with field-effect transistors, e.g. MOS-FET
    • G11C19/186Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes with field-effect transistors, e.g. MOS-FET using only one transistor per capacitor, e.g. bucket brigade shift register
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C27/00Electric analogue stores, e.g. for storing instantaneous values
    • G11C27/04Shift registers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203Particular design considerations for integrated circuits
    • H01L27/0248Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/762Charge transfer devices
    • H01L29/765Charge-coupled devices
    • H01L29/768Charge-coupled devices with field effect produced by an insulated gate
    • H01L29/76833Buried channel CCD

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Amplifiers (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
CH594169A 1968-04-23 1969-04-18 Feldeffekttransistor CH493941A (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
NLAANVRAGE6805705,A NL174503C (nl) 1968-04-23 1968-04-23 Inrichting voor het overhevelen van lading.
NL6904620.A NL164158C (nl) 1968-04-23 1969-03-25 Schakeling met een veldeffecttransistor met een geisoleerde stuurelektrode voorzien van een beveiligingsdiode.

Publications (1)

Publication Number Publication Date
CH493941A true CH493941A (de) 1970-07-15

Family

ID=26644317

Family Applications (1)

Application Number Title Priority Date Filing Date
CH594169A CH493941A (de) 1968-04-23 1969-04-18 Feldeffekttransistor

Country Status (11)

Country Link
US (1) US3624468A (de)
AT (1) AT303818B (de)
BE (1) BE731765A (de)
BR (1) BR6908290D0 (de)
CH (1) CH493941A (de)
DE (1) DE1919406C3 (de)
DK (1) DK119523B (de)
ES (1) ES366200A1 (de)
FR (1) FR2006741A1 (de)
GB (1) GB1260526A (de)
SE (1) SE355694B (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3701175A1 (de) * 1986-01-22 1987-07-23 Mitsubishi Electric Corp Ausgangsschaltkreis einer integrierten halbleiterschaltung

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4395723A (en) * 1980-05-27 1983-07-26 Eliyahou Harari Floating substrate dynamic RAM cell with lower punch-through means
NL8303792A (nl) * 1983-11-03 1985-06-03 Cordis Europ Inrichting voorzien van een op een isfet gebaseerd meetcircuit; voor toepassing in het meetcircuit geschikte isfet en werkwijze ter vervaardiging van een in het meetcircuit toe te passen isfet.
US5529046A (en) * 1995-01-06 1996-06-25 Xerox Corporation High voltage ignition control apparatus for an internal combustion engine

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3264493A (en) * 1963-10-01 1966-08-02 Fairchild Camera Instr Co Semiconductor circuit module for a high-gain, high-input impedance amplifier
US3441748A (en) * 1965-03-22 1969-04-29 Rca Corp Bidirectional igfet with symmetrical linear resistance with specific substrate voltage control
FR1484322A (fr) * 1965-06-22 1967-06-09 Philips Nv Composant semi-conducteur complexe
US3764864A (en) * 1966-03-29 1973-10-09 Matsushita Electronics Corp Insulated-gate field-effect transistor with punch-through effect element
US3543052A (en) * 1967-06-05 1970-11-24 Bell Telephone Labor Inc Device employing igfet in combination with schottky diode
US3470390A (en) * 1968-02-02 1969-09-30 Westinghouse Electric Corp Integrated back-to-back diodes to prevent breakdown of mis gate dielectric

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3701175A1 (de) * 1986-01-22 1987-07-23 Mitsubishi Electric Corp Ausgangsschaltkreis einer integrierten halbleiterschaltung

Also Published As

Publication number Publication date
SE355694B (de) 1973-04-30
AT303818B (de) 1972-12-11
FR2006741A1 (fr) 1970-01-02
ES366200A1 (es) 1971-03-16
DE1919406B2 (de) 1980-09-11
FR2006741B1 (de) 1973-10-19
DK119523B (da) 1971-01-18
GB1260526A (en) 1972-01-19
BE731765A (de) 1969-10-20
DE1919406A1 (de) 1970-12-03
DE1919406C3 (de) 1981-11-05
US3624468A (en) 1971-11-30
BR6908290D0 (pt) 1973-04-26

Similar Documents

Publication Publication Date Title
NL163676C (nl) Veldeffecttransistor.
BR6909966D0 (pt) Dispositivo
CH502697A (de) Transistor
AT278902B (de) Transistor
AT263079B (de) Feldeffekttransistor
DE1903342B2 (de) Halbleitervorrichtung
CH483248A (de) Auftragvorrichtung
BR6913139D0 (pt) Dispositivo traqueal
BR6912784D0 (pt) Transistor
CH492305A (de) Dünnschicht-Feldeffekttransistor
AT303818B (de) Feldeffekttransistor
CH489914A (de) Feldeffekttransistor
DE6602334U (de) Transistor
NL161621C (nl) Halfgeleiderinrichting met veldeffecttransistor.
CH505471A (de) Feldeffekttransistor
CH495632A (de) Feldeffekttransistor
CH466435A (de) Transistor
CH494474A (de) Feldeffekt-Transistor
CH506188A (de) Feldeffekt-Transistor
DE1816439B2 (de) Leistungstransistor
CH480734A (de) Transistor
CH460184A (de) Transistor
CH494495A (de) Transistoroszillator
FR1487974A (fr) Transistors
FR1541622A (fr) Transistor

Legal Events

Date Code Title Description
PL Patent ceased