JPS52136582A - Mos type semiconductor device - Google Patents

Mos type semiconductor device

Info

Publication number
JPS52136582A
JPS52136582A JP5352076A JP5352076A JPS52136582A JP S52136582 A JPS52136582 A JP S52136582A JP 5352076 A JP5352076 A JP 5352076A JP 5352076 A JP5352076 A JP 5352076A JP S52136582 A JPS52136582 A JP S52136582A
Authority
JP
Japan
Prior art keywords
semiconductor device
type semiconductor
mos type
approaches
depth
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5352076A
Other languages
Japanese (ja)
Inventor
Isao Sasaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP5352076A priority Critical patent/JPS52136582A/en
Publication of JPS52136582A publication Critical patent/JPS52136582A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To reduce the change in threshold voltage and achieve higher speed and higher integration by making the depth of the impurity diffused layer forming source, drain regions shallower as it approaches to channel regions.
COPYRIGHT: (C)1977,JPO&Japio
JP5352076A 1976-05-11 1976-05-11 Mos type semiconductor device Pending JPS52136582A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5352076A JPS52136582A (en) 1976-05-11 1976-05-11 Mos type semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5352076A JPS52136582A (en) 1976-05-11 1976-05-11 Mos type semiconductor device

Publications (1)

Publication Number Publication Date
JPS52136582A true JPS52136582A (en) 1977-11-15

Family

ID=12945089

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5352076A Pending JPS52136582A (en) 1976-05-11 1976-05-11 Mos type semiconductor device

Country Status (1)

Country Link
JP (1) JPS52136582A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6130260U (en) * 1984-07-26 1986-02-24 新電元工業株式会社 Insulated gate field effect transistor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6130260U (en) * 1984-07-26 1986-02-24 新電元工業株式会社 Insulated gate field effect transistor

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