JPS52136582A - Mos type semiconductor device - Google Patents
Mos type semiconductor deviceInfo
- Publication number
- JPS52136582A JPS52136582A JP5352076A JP5352076A JPS52136582A JP S52136582 A JPS52136582 A JP S52136582A JP 5352076 A JP5352076 A JP 5352076A JP 5352076 A JP5352076 A JP 5352076A JP S52136582 A JPS52136582 A JP S52136582A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- type semiconductor
- mos type
- approaches
- depth
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE: To reduce the change in threshold voltage and achieve higher speed and higher integration by making the depth of the impurity diffused layer forming source, drain regions shallower as it approaches to channel regions.
COPYRIGHT: (C)1977,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5352076A JPS52136582A (en) | 1976-05-11 | 1976-05-11 | Mos type semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5352076A JPS52136582A (en) | 1976-05-11 | 1976-05-11 | Mos type semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS52136582A true JPS52136582A (en) | 1977-11-15 |
Family
ID=12945089
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP5352076A Pending JPS52136582A (en) | 1976-05-11 | 1976-05-11 | Mos type semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS52136582A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6130260U (en) * | 1984-07-26 | 1986-02-24 | 新電元工業株式会社 | Insulated gate field effect transistor |
-
1976
- 1976-05-11 JP JP5352076A patent/JPS52136582A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6130260U (en) * | 1984-07-26 | 1986-02-24 | 新電元工業株式会社 | Insulated gate field effect transistor |
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