JPS51147270A - Semiconductor ic device and its manufacturing process - Google Patents

Semiconductor ic device and its manufacturing process

Info

Publication number
JPS51147270A
JPS51147270A JP50070831A JP7083175A JPS51147270A JP S51147270 A JPS51147270 A JP S51147270A JP 50070831 A JP50070831 A JP 50070831A JP 7083175 A JP7083175 A JP 7083175A JP S51147270 A JPS51147270 A JP S51147270A
Authority
JP
Japan
Prior art keywords
semiconductor
manufacturing process
intergrating
mists
mis
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP50070831A
Other languages
Japanese (ja)
Inventor
Yasuo Wada
Shigeru Nishimatsu
Seiji Kubo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP50070831A priority Critical patent/JPS51147270A/en
Publication of JPS51147270A publication Critical patent/JPS51147270A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To provide improved integration in MIS IC by intergrating MISTs having different diffusion depth in the impurity diffusing layers of sources and drains, and by preventing drop in the threshold value voltage caused by short channel length.
JP50070831A 1975-06-13 1975-06-13 Semiconductor ic device and its manufacturing process Pending JPS51147270A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP50070831A JPS51147270A (en) 1975-06-13 1975-06-13 Semiconductor ic device and its manufacturing process

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50070831A JPS51147270A (en) 1975-06-13 1975-06-13 Semiconductor ic device and its manufacturing process

Publications (1)

Publication Number Publication Date
JPS51147270A true JPS51147270A (en) 1976-12-17

Family

ID=13442904

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50070831A Pending JPS51147270A (en) 1975-06-13 1975-06-13 Semiconductor ic device and its manufacturing process

Country Status (1)

Country Link
JP (1) JPS51147270A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54133411U (en) * 1978-03-09 1979-09-17
JPS60181054U (en) * 1985-04-18 1985-12-02 富士通株式会社 semiconductor storage device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54133411U (en) * 1978-03-09 1979-09-17
JPS60181054U (en) * 1985-04-18 1985-12-02 富士通株式会社 semiconductor storage device

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