JPS5418683A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5418683A
JPS5418683A JP8293077A JP8293077A JPS5418683A JP S5418683 A JPS5418683 A JP S5418683A JP 8293077 A JP8293077 A JP 8293077A JP 8293077 A JP8293077 A JP 8293077A JP S5418683 A JPS5418683 A JP S5418683A
Authority
JP
Japan
Prior art keywords
manufacture
semiconductor device
drain
seruring
dependance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8293077A
Other languages
Japanese (ja)
Other versions
JPS6158987B2 (en
Inventor
Yoshiaki Kamigaki
Kiyoo Ito
Ryoichi Hori
Yoshifumi Kawamoto
Hideo Sunami
Tetsukazu Hashimoto
Susumu Muramoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Nippon Telegraph and Telephone Corp
Original Assignee
Hitachi Ltd
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd, Nippon Telegraph and Telephone Corp filed Critical Hitachi Ltd
Priority to JP8293077A priority Critical patent/JPS5418683A/en
Publication of JPS5418683A publication Critical patent/JPS5418683A/en
Publication of JPS6158987B2 publication Critical patent/JPS6158987B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Non-Volatile Memory (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE: To obtain a MOSFET which features a high dielectric strength, no element destruction after the drain breakdown and an improved channel length dependance of the threshold voltage, by seruring a difference of the impurity concentration distribution and the diffusion depth between the drain region and the source region.
COPYRIGHT: (C)1979,JPO&Japio
JP8293077A 1977-07-13 1977-07-13 Manufacture of semiconductor device Granted JPS5418683A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8293077A JPS5418683A (en) 1977-07-13 1977-07-13 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8293077A JPS5418683A (en) 1977-07-13 1977-07-13 Manufacture of semiconductor device

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP60005762A Division JPS6150368A (en) 1985-01-18 1985-01-18 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5418683A true JPS5418683A (en) 1979-02-10
JPS6158987B2 JPS6158987B2 (en) 1986-12-13

Family

ID=13787941

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8293077A Granted JPS5418683A (en) 1977-07-13 1977-07-13 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5418683A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58180A (en) * 1981-06-25 1983-01-05 Seiko Epson Corp Manufacturing method of semiconductor device
JPS60140763A (en) * 1983-12-27 1985-07-25 Matsushita Electric Ind Co Ltd Manufacture of semiconductor device
JPS61101077A (en) * 1984-10-24 1986-05-19 Oki Electric Ind Co Ltd Manufacturing method of semiconductor device
JPS6376376A (en) * 1986-09-18 1988-04-06 Sanyo Electric Co Ltd Manufacture of metal-oxide semiconductor (mos) device
JPH0864818A (en) * 1994-02-01 1996-03-08 Lg Semicon Co Ltd Method for manufacturing semiconductor device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5119980A (en) * 1974-08-12 1976-02-17 Fujitsu Ltd ZETSUENGEETOGATADENKAIKOKATORANJISUTANO SEIZOHOHO
JPS51102474A (en) * 1975-03-06 1976-09-09 Nippon Electric Co ZETSUENGEETODENKAIKOKATORANJISUTANOSEIZOHOHO

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5119980A (en) * 1974-08-12 1976-02-17 Fujitsu Ltd ZETSUENGEETOGATADENKAIKOKATORANJISUTANO SEIZOHOHO
JPS51102474A (en) * 1975-03-06 1976-09-09 Nippon Electric Co ZETSUENGEETODENKAIKOKATORANJISUTANOSEIZOHOHO

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58180A (en) * 1981-06-25 1983-01-05 Seiko Epson Corp Manufacturing method of semiconductor device
JPS60140763A (en) * 1983-12-27 1985-07-25 Matsushita Electric Ind Co Ltd Manufacture of semiconductor device
JPS61101077A (en) * 1984-10-24 1986-05-19 Oki Electric Ind Co Ltd Manufacturing method of semiconductor device
JPS6376376A (en) * 1986-09-18 1988-04-06 Sanyo Electric Co Ltd Manufacture of metal-oxide semiconductor (mos) device
JPH0864818A (en) * 1994-02-01 1996-03-08 Lg Semicon Co Ltd Method for manufacturing semiconductor device

Also Published As

Publication number Publication date
JPS6158987B2 (en) 1986-12-13

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