Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Fujitsu Ltd
Original Assignee
Fujitsu Ltd
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Filing date
Publication date
Application filed by Fujitsu LtdfiledCriticalFujitsu Ltd
Priority to JP15812775ApriorityCriticalpatent/JPS5283067A/en
Publication of JPS5283067ApublicationCriticalpatent/JPS5283067A/en
Publication of JPS5744023B2publicationCriticalpatent/JPS5744023B2/ja
Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits
(AREA)
Abstract
PURPOSE: To lower the sheet resistance of a poly Si gate form shallow junctions by providing windows smaller than desired source and drain regions and performing diffusion twice.
COPYRIGHT: (C)1977,JPO&Japio
JP15812775A1975-12-301975-12-30Production of mis type semiconductor device
GrantedJPS5283067A
(en)