JPS54986A - Reducing method of voltage dependancy for fet output capacity - Google Patents
Reducing method of voltage dependancy for fet output capacityInfo
- Publication number
- JPS54986A JPS54986A JP6575477A JP6575477A JPS54986A JP S54986 A JPS54986 A JP S54986A JP 6575477 A JP6575477 A JP 6575477A JP 6575477 A JP6575477 A JP 6575477A JP S54986 A JPS54986 A JP S54986A
- Authority
- JP
- Japan
- Prior art keywords
- output capacity
- reducing method
- fet output
- dependancy
- voltage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE: To reduce the voltage dependancy of the output capacitance for dual gate or double gate FET, by adjusting the concentration of impurity for the channel region directly under the second gate and the impurity distribution directly under the drain region.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6575477A JPS54986A (en) | 1977-06-06 | 1977-06-06 | Reducing method of voltage dependancy for fet output capacity |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6575477A JPS54986A (en) | 1977-06-06 | 1977-06-06 | Reducing method of voltage dependancy for fet output capacity |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS54986A true JPS54986A (en) | 1979-01-06 |
Family
ID=13296120
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP6575477A Pending JPS54986A (en) | 1977-06-06 | 1977-06-06 | Reducing method of voltage dependancy for fet output capacity |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS54986A (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS567479A (en) * | 1979-06-29 | 1981-01-26 | Toshiba Corp | Field-effect type semiconductor device |
JPS5660060A (en) * | 1979-10-22 | 1981-05-23 | Hitachi Ltd | Mos semiconductor device |
US4941810A (en) * | 1988-07-15 | 1990-07-17 | Diesel Kiki Co., Ltd. | Sliding-vane rotary compressor |
US4943216A (en) * | 1988-11-04 | 1990-07-24 | Diesel Kiki Co., Ltd. | Sliding-vane rotary compressor |
JPH02295168A (en) * | 1989-05-09 | 1990-12-06 | Nec Corp | Insulated gate field effect transistor |
-
1977
- 1977-06-06 JP JP6575477A patent/JPS54986A/en active Pending
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS567479A (en) * | 1979-06-29 | 1981-01-26 | Toshiba Corp | Field-effect type semiconductor device |
JPS5660060A (en) * | 1979-10-22 | 1981-05-23 | Hitachi Ltd | Mos semiconductor device |
US4941810A (en) * | 1988-07-15 | 1990-07-17 | Diesel Kiki Co., Ltd. | Sliding-vane rotary compressor |
US4943216A (en) * | 1988-11-04 | 1990-07-24 | Diesel Kiki Co., Ltd. | Sliding-vane rotary compressor |
JPH02295168A (en) * | 1989-05-09 | 1990-12-06 | Nec Corp | Insulated gate field effect transistor |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS5222480A (en) | Insulating gate field effect transistor | |
JPS5425171A (en) | Manufacture of field effect semiconductor device | |
JPS5662356A (en) | Logic integrated circuit device and its manufacturing method | |
JPS53138281A (en) | Insulated-gate field effect transistor | |
JPS53118982A (en) | Electrostatic induction transistor logic element | |
JPS54986A (en) | Reducing method of voltage dependancy for fet output capacity | |
JPS53133379A (en) | Junction-type field effect transistor | |
JPS5382179A (en) | Field effect transistor | |
JPS53112069A (en) | Production of mis transistor | |
JPS544083A (en) | Longitudinal field effect transistor and its manufacture | |
JPS5435686A (en) | Field effect semiconductor device of junction type | |
JPS5384571A (en) | Insulating gate type field effect transistor and its manufacture | |
JPS5424583A (en) | Mos field effect transistor | |
JPS52141581A (en) | Mos type semiconductor device 7 its manufacture | |
JPS547881A (en) | Mos field effect transistor | |
JPS5366382A (en) | Mos type field effect transistor | |
JPS548986A (en) | Semiconductor device | |
JPS53138681A (en) | Vertical junction type field effect transistor | |
JPS53116079A (en) | Transistor and its manufacture | |
JPS54987A (en) | Manufacture for semiconductor device | |
JPS51126772A (en) | Electrolytic effect type semiconductor unit | |
JPS52119872A (en) | Manufacture of semi-conductor device | |
JPS5425172A (en) | Longitudinal junction field effect transistor | |
JPS5410684A (en) | Using method of schottky gate type field effect transistors | |
JPS5372579A (en) | Junction-type field effect transistor |