JPS5396772A - Junction type field effect transistor - Google Patents

Junction type field effect transistor

Info

Publication number
JPS5396772A
JPS5396772A JP1196377A JP1196377A JPS5396772A JP S5396772 A JPS5396772 A JP S5396772A JP 1196377 A JP1196377 A JP 1196377A JP 1196377 A JP1196377 A JP 1196377A JP S5396772 A JPS5396772 A JP S5396772A
Authority
JP
Japan
Prior art keywords
field effect
effect transistor
type field
depth
junction type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1196377A
Other languages
Japanese (ja)
Inventor
Hisashi Funakoshi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP1196377A priority Critical patent/JPS5396772A/en
Publication of JPS5396772A publication Critical patent/JPS5396772A/en
Pending legal-status Critical Current

Links

Landscapes

  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE: To reduce feedback capacity and improve high frequency characteristics by providing a recess of a depth d on the semiconductor surface within a first gate region in a junction dual gate FET wherein thejunction depth of the first gate region is made deeper by a depth d than the junction depth of the second gate.
COPYRIGHT: (C)1978,JPO&Japio
JP1196377A 1977-02-04 1977-02-04 Junction type field effect transistor Pending JPS5396772A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1196377A JPS5396772A (en) 1977-02-04 1977-02-04 Junction type field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1196377A JPS5396772A (en) 1977-02-04 1977-02-04 Junction type field effect transistor

Publications (1)

Publication Number Publication Date
JPS5396772A true JPS5396772A (en) 1978-08-24

Family

ID=11792262

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1196377A Pending JPS5396772A (en) 1977-02-04 1977-02-04 Junction type field effect transistor

Country Status (1)

Country Link
JP (1) JPS5396772A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58161376A (en) * 1982-03-18 1983-09-24 Toshiba Corp Semiconductor device and manufacture thereof

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58161376A (en) * 1982-03-18 1983-09-24 Toshiba Corp Semiconductor device and manufacture thereof

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