JPS54147786A - Transistor - Google Patents
TransistorInfo
- Publication number
- JPS54147786A JPS54147786A JP5579778A JP5579778A JPS54147786A JP S54147786 A JPS54147786 A JP S54147786A JP 5579778 A JP5579778 A JP 5579778A JP 5579778 A JP5579778 A JP 5579778A JP S54147786 A JPS54147786 A JP S54147786A
- Authority
- JP
- Japan
- Prior art keywords
- gate
- current
- punch
- controllability
- taking
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
Abstract
PURPOSE:To remarkably increase the controllability, by taking the implanted construction for the gate, in the MOS type FET operating the punch through current with control. CONSTITUTION:The source region 13 and the drain region 14 are formed on the semiconductor substrate 12, and the gate electrode 19 is coated on the surface of the substrate 12 between those regions via the insulation film 16. In this case, the insulation film 16 and the gate electrode 19 are taken as implanted type, taking the construction that the gate pole 19 is closed to the path of the punch through current 21. Thus, the controllability to the punch through current 21 is very increased, to remarkably increase the leakage current, gate voltage and gate controllability. No problem is taken place even with deeper depth of the implantation than that of the regions 13 and 14, and it can be up to about 4 mum.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5579778A JPS54147786A (en) | 1978-05-11 | 1978-05-11 | Transistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5579778A JPS54147786A (en) | 1978-05-11 | 1978-05-11 | Transistor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS54147786A true JPS54147786A (en) | 1979-11-19 |
Family
ID=13008895
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5579778A Pending JPS54147786A (en) | 1978-05-11 | 1978-05-11 | Transistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS54147786A (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS51114074A (en) * | 1975-03-31 | 1976-10-07 | Sony Corp | Insulation gate type field effect transistor |
-
1978
- 1978-05-11 JP JP5579778A patent/JPS54147786A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS51114074A (en) * | 1975-03-31 | 1976-10-07 | Sony Corp | Insulation gate type field effect transistor |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A621 | Written request for application examination |
Effective date: 20040116 Free format text: JAPANESE INTERMEDIATE CODE: A621 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20061121 |
|
| A977 | Report on retrieval |
Effective date: 20061024 Free format text: JAPANESE INTERMEDIATE CODE: A971007 |
|
| A601 | Written request for extension of time |
Effective date: 20070220 Free format text: JAPANESE INTERMEDIATE CODE: A601 |
|
| A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20070409 |
|
| A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20070521 |
|
| A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20071023 |