JPS54146582A - Manufacture of mos field effect transistor - Google Patents

Manufacture of mos field effect transistor

Info

Publication number
JPS54146582A
JPS54146582A JP5513378A JP5513378A JPS54146582A JP S54146582 A JPS54146582 A JP S54146582A JP 5513378 A JP5513378 A JP 5513378A JP 5513378 A JP5513378 A JP 5513378A JP S54146582 A JPS54146582 A JP S54146582A
Authority
JP
Japan
Prior art keywords
film
ion
control
insulating
ion injection
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP5513378A
Other languages
Japanese (ja)
Other versions
JPS6058597B2 (en
Inventor
Hisao Kondo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP5513378A priority Critical patent/JPS6058597B2/en
Publication of JPS54146582A publication Critical patent/JPS54146582A/en
Publication of JPS6058597B2 publication Critical patent/JPS6058597B2/en
Expired legal-status Critical Current

Links

Abstract

PURPOSE: To increase the degree of freedom for control of the characteristics by removing temporarily the insulating thin film used for the ion injection, giving annealing with covering of the insulating thick film to prevent the effect of contamination on the surface of the insulating film, and then securing the control of the characteristics of MOSFET according to the ion injection terms to the offset channel.
CONSTITUTION: Resist mask 11 is provided on surface oxide thin film 10 after formation of n-layer 3 and 4 on p-type substrate 1, and then n-type ion is injected to control the surface potential of offset channel 9. Mask 11 plus all of oxide film 2 and 10 are removed, and oxide film 12 is formed newly. After this, the annealing is given to activate the injected ion. Thus, a high annealing temperature can be applied since the electrode is not formed yet, and thus the thcikness of film 12 can be increased so that the surface contamination of film 12 may not effect the surface potential of channel 9. Then the opening is drilled selectively to film 12 to form gate insulating film 5, and then the opening is drilled selectively to film 5 to form electrodes 6∼8. With this method, the ion injection amount can be increased up to 1015cm-2, thus increasing the degree of freedom for the characteristics.
COPYRIGHT: (C)1979,JPO&Japio
JP5513378A 1978-05-09 1978-05-09 Manufacturing method of MOS field effect transistor Expired JPS6058597B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5513378A JPS6058597B2 (en) 1978-05-09 1978-05-09 Manufacturing method of MOS field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5513378A JPS6058597B2 (en) 1978-05-09 1978-05-09 Manufacturing method of MOS field effect transistor

Publications (2)

Publication Number Publication Date
JPS54146582A true JPS54146582A (en) 1979-11-15
JPS6058597B2 JPS6058597B2 (en) 1985-12-20

Family

ID=12990273

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5513378A Expired JPS6058597B2 (en) 1978-05-09 1978-05-09 Manufacturing method of MOS field effect transistor

Country Status (1)

Country Link
JP (1) JPS6058597B2 (en)

Also Published As

Publication number Publication date
JPS6058597B2 (en) 1985-12-20

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